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Application filed by Taiwan Semiconductor MfgfiledCriticalTaiwan Semiconductor Mfg
Priority to TW88116460ApriorityCriticalpatent/TW429530B/en
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Publication of TW429530BpublicationCriticalpatent/TW429530B/en
A manufacturing method of self-aligned contact is disclosed. A substrate has active devices which surfaces contain an etch-stop layer and a dielectric layer on the etch stop layer. First, etch the dielectric layer till the etch-stop layer to form the opening of self-aligned contact. Then proceed the wet etch process to remove the dielectric layer and polymer residue in the bottom of contact. Finally, remove the etch-stopped layer and deposit a metal layer to complete the structure of self-aligned contact.
TW88116460A1999-09-231999-09-23Manufacturing method of self-aligned contact
TW429530B
(en)