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A dummy pattern manufacturing method consists the following steps. Divide the substrate of semiconductor into high density zone and empty component zone. Form multiple conductor patterns in the high density zone. Form a dielectric layer on the substrate and cover the conductor patterns. Form multiple photo-resistant patterns on the dielectric layer surface of the empty component zone. Then etch the dielectric layer with anisotropic etching in order to form spacer at the side of the conductor pattern. In the meantime, covert the photo-resistant pattern to the dielectric layer in order to form multiple dummy patterns on the empty component zone. Finally remove the photo-resistant pattern.
TW88118641A1999-10-281999-10-28Manufacturing method of dummy pattern
TW429417B
(en)