TW428287B - Manufacturing method for flash memory and the operation method for its erasure - Google Patents
Manufacturing method for flash memory and the operation method for its erasureInfo
- Publication number
- TW428287B TW428287B TW087121316A TW87121316A TW428287B TW 428287 B TW428287 B TW 428287B TW 087121316 A TW087121316 A TW 087121316A TW 87121316 A TW87121316 A TW 87121316A TW 428287 B TW428287 B TW 428287B
- Authority
- TW
- Taiwan
- Prior art keywords
- voltage
- erasure
- well
- manufacturing
- flash memory
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/972—Stored charge erasure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW087121316A TW428287B (en) | 1998-12-21 | 1998-12-21 | Manufacturing method for flash memory and the operation method for its erasure |
| US09/467,372 US6329246B1 (en) | 1998-12-21 | 1999-12-20 | Method for fabricating flash memory |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW087121316A TW428287B (en) | 1998-12-21 | 1998-12-21 | Manufacturing method for flash memory and the operation method for its erasure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW428287B true TW428287B (en) | 2001-04-01 |
Family
ID=21632397
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW087121316A TW428287B (en) | 1998-12-21 | 1998-12-21 | Manufacturing method for flash memory and the operation method for its erasure |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US6329246B1 (zh) |
| TW (1) | TW428287B (zh) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10304654A1 (de) * | 2003-02-05 | 2004-08-19 | Infineon Technologies Ag | Speicherzelle, Speicherzellen-Anordnung und Verfahren zum Herstellen einer Speicherzelle |
| US7119393B1 (en) * | 2003-07-28 | 2006-10-10 | Actel Corporation | Transistor having fully-depleted junctions to reduce capacitance and increase radiation immunity in an integrated circuit |
| US9117832B2 (en) * | 2012-06-05 | 2015-08-25 | Phison Electronics Corp. | Semiconductor device with physical manipulation detector and corrector |
| JP6298240B2 (ja) * | 2013-03-22 | 2018-03-20 | サイプレス セミコンダクター コーポレーション | 半導体装置及びその消去方法 |
| KR102567072B1 (ko) * | 2016-03-21 | 2023-08-17 | 에스케이하이닉스 주식회사 | 수평형 바이폴라 접합 트랜지스터를 갖는 안티퓨즈 불휘발성 메모리 소자 |
| US10318071B2 (en) * | 2017-03-23 | 2019-06-11 | Intel Corporation | Method and apparatus for a blob angle orientation recognition in a touch device |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5411908A (en) * | 1992-05-28 | 1995-05-02 | Texas Instruments Incorporated | Flash EEPROM array with P-tank insulated from substrate by deep N-tank |
| US5379253A (en) * | 1992-06-01 | 1995-01-03 | National Semiconductor Corporation | High density EEPROM cell array with novel programming scheme and method of manufacture |
| KR960012303B1 (ko) * | 1992-08-18 | 1996-09-18 | 삼성전자 주식회사 | 불휘발성 반도체메모리장치 및 그 제조방법 |
| US6043123A (en) * | 1996-05-30 | 2000-03-28 | Hyundai Electronics America, Inc. | Triple well flash memory fabrication process |
| US6071778A (en) * | 1998-02-20 | 2000-06-06 | Stmicroelectronics S.R.L. | Memory device with a memory cell array in triple well, and related manufacturing process |
| US6091101A (en) * | 1998-03-30 | 2000-07-18 | Worldwide Semiconductor Manufacturing Corporation | Multi-level flash memory using triple well |
-
1998
- 1998-12-21 TW TW087121316A patent/TW428287B/zh not_active IP Right Cessation
-
1999
- 1999-12-20 US US09/467,372 patent/US6329246B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US6329246B1 (en) | 2001-12-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MK4A | Expiration of patent term of an invention patent |