TW420880B - Group III nitride semiconductor light-emitting element and light source device - Google Patents

Group III nitride semiconductor light-emitting element and light source device Download PDF

Info

Publication number
TW420880B
TW420880B TW88105995A TW88105995A TW420880B TW 420880 B TW420880 B TW 420880B TW 88105995 A TW88105995 A TW 88105995A TW 88105995 A TW88105995 A TW 88105995A TW 420880 B TW420880 B TW 420880B
Authority
TW
Taiwan
Prior art keywords
light
emitting
emitting element
lead frame
layer
Prior art date
Application number
TW88105995A
Other languages
Chinese (zh)
Inventor
Wataru Hattori
Atsuo Hirano
Takemasa Yasukawa
Original Assignee
Toyoda Gosei Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyoda Gosei Kk filed Critical Toyoda Gosei Kk
Application granted granted Critical
Publication of TW420880B publication Critical patent/TW420880B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body

Landscapes

  • Led Device Packages (AREA)
  • Led Devices (AREA)

Abstract

The Group III nitride semiconductor light-emitting element and light source device of the present invention is to improve dielectrical breakdown strength with respect to forward and reverse electrostatic voltage. With a lead frame 402 insert-molded, a frame body 400 is provided wherein a first and second chambers 404 and 406 are constituted with the lead frame 402 exposed. At the first chamber 404, each chip of a blue light- emitting diode 100, a green light-emitting diode 100G, and a red light-emitting diode 100R is die-bonded, and, at the second chamber 406, the exposed lead frame is provided with Zener diodes 300B and 300G. The Zener diodes 300B and 300G are connected in parallel to respective diodes, connection being made with such polarity as Zener breakdown occurs at a voltage of at least operation voltage in the forward direction of each diode. Thus, an overcurrent is bypassed by Zener breakdown for an overcurrent in forward direction, while as a normal forward diode the excessive voltage is bypassed in reverse direction.

Description

經濟部中央橾準局貝工消費合作社印笨 d2〇879 ^ A7 _B7___ 五、發明説明（1 ) 發明背景 1 .發明領域 本發明係關於一種彈性太陽電池*包括一光電轉換層 設置在一彈性基底上且由非單一結晶矽薄膜之叠層構成。 2 ·相關技藝之說明 太陽電池已快速的發展當成電源以節省能源·在太陽 電池中，包括主要由叠層例如非晶膜，微晶膜，和多晶膜 之非單一結晶矽薄膜構成之光電轉換層之太陽電池具有可 以較低成本製造之特性· 已知之彈性太陽電池主要使用非晶矽薄膜當成光電轉 換層和使用彈性基底形成。 由於彈性太陽電池重置輕且可自由彎曲，因此此種太 陽電池可黏著於衣服帳蓬等物體上。 就具有彈性以使用於彈性太陽電池之基底而言，除了 PET (對酞酸伸乙酯），PEN (聚萘酸伸乙酯），聚 醯亞胺，P E S (聚硫醚）外，亦可使用不銹鋼之金屬基 底。 不銹鋼基底之優點爲具張力強度高於樹脂基底之張力 強度，且可以低成本製造· 但是，當使用不銹鋼基底時，在製造步驟中會引起形 變等問題，或是在製造後，彈性太陽電池會彎向基底側， 因此，相當難以黏著至平坦區域，也因此，此種太陽電池 變成較不令人喜愛。 本紙張尺度遴用中國《家揉隼（CNS ) A4规格（2丨0X297公嫠) ~ (請先閲讀背面之注意事項再填寫本頁)Yin Ben d20879 ^ A7 _B7___ of the Central Bureau of Standards and Commerce of the Ministry of Economic Affairs ^ A7 _B7___ 5. Description of the invention (1) Background of the invention 1. Field of the invention The present invention relates to a flexible solar cell * including a photoelectric conversion layer disposed on an elastic substrate It consists of a stack of non-single crystalline silicon films. 2 · Explanation of related technologies. Solar cells have been rapidly developed as power sources to save energy. · In solar cells, it includes photovoltaics mainly composed of non-single crystalline silicon thin films, such as amorphous films, microcrystalline films, and polycrystalline films. The conversion layer of the solar cell has the characteristics that it can be manufactured at a lower cost. Known elastic solar cells are mainly formed using an amorphous silicon film as a photoelectric conversion layer and an elastic substrate. Because the flexible solar battery is light and flexible, it can adhere to objects such as clothing tents. As for substrates with elasticity for use in flexible solar cells, in addition to PET (ethylene terephthalate), PEN (polyethylene naphthalate), polyimide, and PES (polysulfide), Use stainless steel metal base. The advantage of the stainless steel substrate is that it has higher tensile strength than the resin substrate and can be manufactured at low cost. However, when a stainless steel substrate is used, it may cause problems such as deformation during the manufacturing process, or after manufacturing, the elastic solar cell may Bending to the substrate side, it is quite difficult to adhere to flat areas, and as a result, such solar cells become less desirable. This paper uses China's "CNS) A4 size (2 丨 0X297) 嫠 (Please read the precautions on the back before filling this page)

五、發明說明（2 ) A7 B7 發 於 t4 加 施 向 逆 及 向 順 止 防 可 作壞 之破 件之 元起 償引 補所 項電 此靜 。於之 者由部 器光 第 及 項 及接 fci 元 之 償者 補兩 將行 , 施 括線 包引 明用 發而 之上 項板 基 之 3JJ 分 第於 圃成 範形 利別 專各 請部 申光 發 封 密 旨 HCU 樹 用 同 共 括 包 明 發 之 項 積光 集發 其及 藉件 可元 而償 ， 補 部在 光。 發程 及製 件之 元適 償最 補到 第造得 圍製可 範別 ， 利各件 專可元 請於成 申由形 中 。來 其者段 , 兩 手 機 對 水 防 之 件 元 償 補 求 企 可 5 合 場 之 封。 密護 同防 共之 脂力 樹外 藉性 部械 第 及 項 - 造 上製 板化 基簡 第 一 而 圍同， 範於件 利成元 專胗償 請部補 申光造 發製 及可 件中 元驟 償步 補層 使 成 » 之 括部 包光 明發 發在 之此 項因 5 項 5 著。 第隨化 圍可簡 範，被 利方造 專上製 請之其 申部此 ， 光因 者發 ， 再於件 層元 括 包 明 發 之 積 件 元 償 形 後 驟 步 成 形 之 部 光 發 償 補 ----------------裝— - ' (請先閱讀背面之注意事項再填寫本頁) I _ -線- 項 6 經濟部智慧財產局員工消費合作社印製 者 置 第裝 圍源 範光 利之 專件 請元 申光 發 數特 複之 有明 置發 載之 於項 闞-> 為 明 發 之 項 n 第 至 第 範 利 專 請 Φ 線引元 引之光 之室發 形該之 成在項 型設 一 嵌被任 括 ·，中 包分項 ，部； 體 一 框之 脂框 樹線第 *， 引圍 框該範 線出利 引露專 :室請 有一 申 設有如 配具之 , 且 上 為並樞 徵框線 第 至 項 元 光 發 之 光 色 綠 出 發 及 件 元 光 發 之 光 色 Μ 出 發 是 少 至 ί ο 件件 分 板 基 之 同 不 在 為 徵 特 之 明 發 之 項 7 第 圍 範 利 專 請 串 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 5 經濟部智慧財產局員工消費合作社印製 Γν !〇 ^ ^ Α7 ^_Β7_ 五、發明說明（3 ) 開設置補償元件及發光部，而配設有：引線框；樹脂框體 *包括嵌型成形之引線框並且具有第一室及第二室均露出 該引線框之一部分；被設在該第一室之引線框上之至少是 發出藍色光之發光元件或發出綠色光之發光元件•另在該 第二室之引線框上配設有補價元件。 藉此等結構I由一個光源裝置至少可選擇得到光之三原 色中之藍色及/或綠色之光，或可得到混色光。 在申請專利範圍第8項及第9項之發明中更有發出紅色光 之發光元件被設在上述室之引線框上。藉此可得到光之三 原色，而可用於彩色顯示器*色像掃描器之光源。 申請專利範圍第〗0項及第11項之發明之特徵為，對於裝 載有發光元件之該室，即對於裝載發光元件後之該室密封 以透明樹脂。藉此結構，變得容易製堦光源裝置，而可得 到可輸出光之氣密性良好之光源。 [發明之實施形態] [第1實施例] 圖1為一種由肜成於青玉基板11上之GaN系化合物半導體 所形成之發光元件，即發光二極體100之示意式斷面結構 圖。在基板11上設有由氮化鋁（A1N)構成之膜厚約25nra之 緩衝層12，其上肜成有由矽（Si)摻雜之GaN所構成之膜厚 妁4.〇w b之高載子濃度n +層13。在此高載子濃度n +層13 上形成有Si摻雜之η型GaN所構成之膜厚約0.5«m之包覆層 ]4。並且在包覆層14上形成有多重之量子井構造（MQ10之 發光層15，其為由膜厚約35 &之GaH所構成之障壁層151與 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐） 6 ---I ----I--裝------―—訂---I--!線 (請先閱讀背面之注意事項再填寫本頁) c£- Δ #0 ’ A7 _B7_ 五、發明說明（4) 膜厚約35S之Ga0.BInD.2N所構成之井層152交互積層所彤 成者。障壁層151有6層，井層152有5層。在發光層15上形 成有由P型AlD,15GaD.e5N所構成之膜厚約50ηιπ之包覆層16 。再者，在包覆層16上形成有由ρ型GaN所構成之膜厚約 lOOnm之接觸層17。 再者，在接觸層17上藉金屬蒸鍍手段形成有透光性之p 電極18A，而在n +層〗3上形成有II甯極】8B。透光性p電極 18A為由一和接觸層17接合之膜厚約15^之鈷（Co)與一和Co 接仓色膜厚約6〇ί之金（Au)所構成。η電極18B為由膜厚約 20〇1之釩（V)與膜厚約1.8w m之鋁（Α1)或Η合金所構成。 在ρ電極18Α上之一部分形成有由Co或Ni與Au、ΑΙ，或此等 金屬之合金所構成之膜厚約1.5/i π之電極增損器20。再者 *在基板11之背面形成有由膜厚約20〇ηΒ1之Α1所構成之金 屬層10。 其次*關於此發光二極體100之製造方法，加以說明。 上述發光二極體100係藉依照有機金屬氣相成長法（K下 |簡稱為「MOVPEj )之氣相成長手段所製成者。所用之氣 體為氨（NH3)，載體氣體（H2,D，三甲鎵（Ga(CH3)3(M下 ，稱為「TMG」），三甲鋁（A1(CH3)3)(K下，稱為「TMA」 )，三甲銦（In(CH3)3)(以下，稱為「TMI」），單矽烷 (SiH*)M及二環戊二烯鎂（Hs(C5Hs)2) (U下，稱為「 CP 2Mg」）。 首先，將經過有機洗滌及熱處理手段洗滌後之a面為主 面之單晶之基板安裝於被裁置於M0VPE裝置之反應室之 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） I IK I--- — 1----I ^ * — ----- -- (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 7 η 〇 η Α7 Β7 經濟部智慧財產局員工消費合作社印制衣 五、發明說明（5 ) 基座上。其次，在常壓下使Η2流動於反應室之同時，在 1100°C溫度下烘焙該基板。 其次，使基板11之溫度下降至400C，對此供給ii2、NH3 K及TM A，而K約2 5 n m之膜厚形成A 1 N之緩衝層1 2。 其次·將基板11之溫度保持於1150ti ，對此供給 NH3、TMGM及單矽烷，而形成由具有膜厚約4.0/iB及電子 澹度2X10 18 /cm3之GaN所構成之高載子灑度n+層13。 其次，將基板11之溫度保持於1150t，對此供給N2，Hz 、NH3、TMG、TMAK及單矽烷，而形成由具有膜厚約0.5wi 及電子濮度IX 10 18 /cm3之GaN所構成之包覆層14。 在形成上述之包覆層14後*繼之對此供給N2或NH3 以及TMG*而形成由具有膜厚約35¾之GaN所構成之障壁層 151。其次，供給1或}12、NH3、TMGM及TMI，而形成由具 有膜厚約35Ϊ之GaD.0InD.2N所構成之井層152。進一步在 同一條件下以4個循環形成障壁層151及井層152，而在其 上形成由GaN構成之障壁層151。如此形成5個循環之MQW構 造之發光層1 5。 其次，將基板11之溫度保持於1100TC，對此供給！^或[]2 、NH3、TMG、TMA、Μ及CPzMg，而形成由具有膜厚約50ηπι 之摻雜有Mg之p型AU.15Gaa.BSN所構成之包覆層16。 其次，將基板11之溫度保持於1100°C，對此供給1或}]2 、NH3、TMG、Μ及CP2Mg，而形成由具有腹厚約ΙΟΟηιη之摻 雜有Ms之p型GaN所構成之接觸層17。 其次 > 在接觸層17上形成蝕刻掩模，除去指定領域之掩 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 8 ----^ -------裝---I--J — 訂 -----線 (請先閲讀背面之注意事項再填寫本頁) η Α7 Β7 五、發明說明（6 ) 層 觸 接 之一 部： 之+ 蓋η+ 覆、 模14 掩層 被覆 未包 將、 而15， 層 模光 層 刻 蝕 Κ 予 段 手 刻 蝕 子 雛， 性次 懕其 反 層 覆 包 發 之 體 氣 氯 含 用 利 藉 分 部 出 露 面 表 之 3 1 層 + Π 使 8 1L 極 電 Π 之 3 1 層 + η 於 對 相 其 成 形 法 刻 蝕 光 藉 經濟部智慧財產局員工消費合作社印製 相對於接觸層17之透光性p電極18A，K及電掻增損器20。 將如此形成之發光二極體100，如圖2所示•安裝於引線 203之上部之平坦部203上，藉金靥線204使η電極18Β與引 線201連接，而藉金鼷線205使電極增損器20與引線202連 接後，施行樹脂之成形Μ形成透鏡20 6。另一方面，使曾 納二極體300(構成補償元件）之陽極301與引線201埋接， 而使曾納二極骽300之陰極302與引線202連接。 藉此，在比發光二極體100之動作電壓（約3.5V)為高之 靜電懕依順向（引線202對引線201保持正電位）施加於引線 202與201之間之場合，曾納二極體300則發生電子雪崩/崩 潰（非破壞性降伏），致使靜電壓所引起之過刺電流流於曾 納二極體300，因此保護發光二極體1〇〇免於受到靜電壓所 引起之絕緣破壞。再者，在對於發光二掻體]00之動作電 壓逆向之靜電壓施加於引線202與201之間之場合，則有順 向之過剩锺流流於Κ平常之二極體起作用之曾納二極體 300，而保護發光二極體100免於受到高逆電壓。 如此，即使有順向及逆向之高靜電壓施加於引線202與 201之間，電流亦會流於曾納二極體，而保護發光二極體 100免於受到靜電壓所引起之絕緣破壞。 [第二實豳例] 本紙張尺度適用中國國家標準（CNS)A4規格（210x297公釐） -9 - - --------I -裝·---1--—訂---1---線 (請先閲讀背面之注意事項再填窝本頁) 0¾¾0 ^ a7 _B7_ 五、發明說明（7 ) 本實施例係如圖3所示，將雙向性之曾納二極體310與發 允二極體100—起*用樹脂成形而裝設於透鏡206内者。如 此可達成曾納二極體310之防水及對機械性外力之防護。 左雙向性之曾納二極體310被用作補償元件之場合，對順 向及逆向之靜電壓，發生曾納崩潰（非破壊性之降伏）*使 雙向之動作電阻變得很小*因此可達成發光二極體100之 更確實之保護。 [第三實施例] 本實施例為如圖4所示，在發光二極體120之接觸層17上 形成曾納二極體330之例子。 從緩衝層12至接觸層17為止*形成如上所述。其後，為 了形成曾納二極體330，施行η型GaN所構成之第一層33 3及 P型GaN所構成之第二層334之同樣之形成。 繼之，依照與第一實施例相同之步驟施行蝕刻後，形成 發光二極體120之p電極18A、電極增損器20、η電極18B， 曾納二極體330之p電極層33〗、η電極層332。將如此肜成 之發光元件，如圖4所示，安裝於引線201之平坦部203上 I - Γ 1 ----裝--------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 器 損 層 穿極 i s 極nm 電之 之30 ο 3 12體 體極 極二 二 納 光曾 發於 使接 ’a 後上 然學 ο 電 金 藉 陰 在 ΟΪ藉 22且 線並 0 ) 極 線 靥 金 體 電 η 之 極-一1* Λϋ ο 为 2 發線 使引 - 於 地接 fcac Ϊ 一 樣埋 同上 。 學 02電 2 在 線2¾ ....... οίώ 弓 2 於線 接靥 連金 學 電 在 8 極 體。 極 1 二20 納線 曾 引 使於 而接 逋 上 學 電 在 3 2 2 線 靥 金 藉 1Χ 3 3 層 極 甯 Ρ 之 逋 聯 並 之 ο 2 1A 體 極二 光 發 對 之 ο 3 3 體 極二 納 曾 成 造 此 藉 10 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐） 42 088 0 1 蝤 Α7 Β7 經濟部智慧財產局員工消費合作社印製 五、發明說明（8 ) 接，可達成與第一實施例相同之作用效果。 再者，在上逑之第一至第三實施例中，對發光二極體 100、120施加順向及逆向之靜電500V，結果未觀察到絕緣 破壊。 [第四簧施例] 在本實施例中，關於第一實拖例所說明之由第Μ族氮化 物半導體構成之發光二極體（電路片）100，製造藍色發光 及綠色發光之二種發光二極體。使發光層15中之銦之組成 比增加時，可得到綠色發光之二槿體電路片。再者，紅色 之發光二極體（電路片）係可由InGaAlP系化合物半導體得 到者。本例係將此項藍色發光二極體100B、綠色發光二極 體100G、以及紅色發光二極體100R配設於一個樹脂框體内 者0 如圖5、圖6所示，藉引線框402之嵌型成形而形成樹脂 框體400。此樹脂框體400具有從匾之上部起凹人之凹部， 並且形成有第一室404及第二室406均露出下方之引線框 40 2。在此第一室藉模Η接合式連接有Μ色發光二極體 100Β、綠色發光二極體100G、Μ及紅色發光二極體100R之 各電路片。引線40 8為共同之端子，此端子藉金屬線連接 於各二極體電路片之η電極。引線410為藍色發光二極體 100Β之陽極端子，此端子藉金靥線連接於其ρ電極。同樣 地，引線412為綠色發光二極體100G之陽極端子，藉金臑 線連接於其Ρ電極者。引線414為紅色發光二極體100R之陽 極端子，藉金靨線連接於其Ρ電極者。又按*引線41 6為電 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐） -1 1 - _---\------裝--------訂---------線-- (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 420880 ^ A7 _B7_ 五、發明說明（9 ) 位遮蔽用之引線。 再者，在第二室406所露出之引線框上配設有曾納二極 體300B、300G。在引線408藉模Η接合式連接有曾納二極 體300Β、300G之陽極（ρ電極而其陰極（η電極）各別藉金 屬線連接於引線410、412。此項各發光二極體與各曾納二 極體之連接關係乃輿圖1相同。又按，在紅色發光二極體 300R並未連接有曾納二極體•此係由於在InGaA丨Ρ系化合 物半導體之場合輿第I族氮化物半導體之場合不同，其在 順向及逆向均有充分足夠之靜電耐壓所致。 如此使各發光二極體電路片及曾納二極體電路Η在引線 框上連接之後，將透明樹脂填充於第一室4Μ及第二室406 內。藉此，可自第一室404之表面依選擇得到藍色、綠色 、紅色之三原色，或得到其任選之混合色。 此捶光源裝置可作為色像掃描器之光源。 在上述任一實施例中*曾納二槿體均可為雙方向性之曾 納二極體。即，亦可Μ使用由個別之曾納二極體互相逆阎 串聪連接而成之元件，或如ΡΠΡ、ηρη型積層有相反傳導型 之層之一個雙向性曾納二極體。再者，亦可Μ使用羼於一 種單向性及雙向性定電壓二極體之突崩（電子雪崩降伏/擊 穿）二極體，以代替曾納二極體。再者*亦可以使用一種 有損失之電容器。 例如，在第三實陁例中，為了使曾納二極體330形成雙 方_性，使r(型第一層333與ρ型第二層33 4積層後，在ρ型 第二層上積層η型第三層，Μ構成npn構造。藉此，可使雙 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐) ~ ~ ----V---；---裳--------訂---------線 (請先閲讀背面之注意事項再填寫本頁)V. Description of the invention (2) A7 B7 was issued at t4, plus reverse and forward to prevent damage that can be broken from the yuan to compensate for the static electricity. In this case, the two items will be complemented by the item and item of the component device, and the compensator of the fci element. The enclosing line will be used to clarify the issue. The 3JJ points on the item board base will be used in the garden. The Ministry of Shen Guangfa's seal and secret purpose of the HCU tree to collect and distribute the item and the borrowing can be paid in full, and make up the department in the light. The compensation of the departure process and the components is the most suitable for the scope of the control system, and the individual components can be used in the application. In the other segment, the two-handed mobile device compensated for the water defense component and required the enterprise to seal the 5-way field. Secret Protection of the Commonwealth's Literary Tree Loaning Department Item and Item-Make the board simplified and the first one is the same. Sudden compensation steps make up the enclosing part of »Bao Guangmingfa in this item because of 5 items. The Suihuahuai can be simplified, and the application department that was created by the Liberal Party to apply for a post-secondary system will send the light to the person, and then the part will be compensated in a step-by-step manner, including the accumulation of the accumulated product elements. Make up ---------------- 装 —-'(Please read the notes on the back before filling out this page) I _ -Line-Item 6 Printed by the Employees ’Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs The manufacturer sets the source of Fan Guangli's special piece, and asks Yuan Shenguang to send a special copy of it. It is posted in Xiang 阚-> For Mingfa's item n. To Fanli, please call Φ for the light. The room hair shape should be set in the item type to be embedded and included in the sub-item, sub-item, department; the body frame of the fat frame tree line No. *, the frame of the fan line profit and exposure special: room please There is an application such as the accessory, and the top and bottom of the border line are the light color of the green light and the light color of the light. The starting color is as little as ί. For the purpose of clarifying the special issue of the 7th paragraph Fan Li, please refer to the paper standards applicable to Chinese national standards (C NS) A4 specification (210 X 297 mm) 5 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Γν! 〇 ^ ^ Α7 ^ _Β7_ V. Description of the invention (3) A compensation element and a light emitting section are provided, and are equipped with: Lead frame; resin frame body * includes a lead frame with insert molding and has a first chamber and a second chamber both exposing a part of the lead frame; at least the blue light emission provided on the lead frame of the first chamber Components or light-emitting components that emit green light • Complementary components are placed on the lead frame of the second chamber. With this structure I, at least one of the three primary colors of light can be selected to obtain blue and / or green light from one light source device, or mixed color light can be obtained. In the inventions claimed in items 8 and 9, the light-emitting element that emits red light is provided on the lead frame of the above chamber. Thereby, the three primary colors of light can be obtained, which can be used as a light source for a color display * color image scanner. The inventions in the scope of the patent application No. 0 and No. 11 are characterized in that the chamber containing the light-emitting element is sealed with a transparent resin for the chamber containing the light-emitting element. With this structure, it becomes easy to manufacture a tritium light source device, and a light source with good airtightness capable of outputting light can be obtained. [Embodiment of Invention] [First Embodiment] FIG. 1 is a schematic cross-sectional structural view of a light-emitting diode 100, which is a light-emitting element formed of a GaN-based compound semiconductor formed on a sapphire substrate 11. As shown in FIG. The substrate 11 is provided with a buffer layer 12 made of aluminum nitride (A1N) with a film thickness of about 25 nra, and a film thickness made of silicon (Si) -doped GaN is formed on the substrate 11. Carrier concentration n + layer 13. On this high carrier concentration n + layer 13, a cladding layer made of Si-doped n-type GaN with a thickness of about 0.5 «m is formed] 4. In addition, a multiple quantum well structure (MQ10 luminescent layer 15) is formed on the cladding layer 14 which is a barrier layer 151 made of GaH with a film thickness of about 35 & and this paper size applies Chinese National Standard (CNS) A4 Specifications (210 x 297 mm) 6 --- I ---- I--installation ------------ order --- I--! Line (Please read the precautions on the back before filling this page ) c £-Δ # 0 'A7 _B7_ V. Description of the invention (4) The well layer 152 composed of Ga0.BInD.2N with a film thickness of about 35S is formed by the interactive stacking. The barrier layer 151 has 6 layers and the well layer 152 There are five layers. A cladding layer 16 made of P-type AlD, 15GaD.e5N and having a film thickness of about 50 nm is formed on the light-emitting layer 15. Furthermore, a cladding layer 16 made of p-type GaN is formed on the cladding layer 16. A contact layer 17 having a film thickness of about 100 nm. Furthermore, a transmissive p-electrode 18A is formed on the contact layer 17 by a metal evaporation method, and an II-ning electrode 8B is formed on the n + layer 3]. The p-electrode 18A is made of cobalt (Co) with a film thickness of about 15 ^ bonded to the contact layer 17 and gold (Au) with a film thickness of about 60 Å. The n-electrode 18B is made of a film. Vanadium (V) with a thickness of about 001 and aluminum (Α1) with a film thickness of about 1.8 wm or It is made of an alloy. An electrode attenuator 20 having a thickness of about 1.5 / i π made of an alloy of Co or Ni and Au, AI, or these metals is formed on a part of the ρ electrode 18A. Furthermore, * on the substrate A metal layer 10 composed of A1 with a film thickness of about 20 ηB1 is formed on the back surface of 11. Next, the manufacturing method of the light-emitting diode 100 will be described. The light-emitting diode 100 is based on an organic metal vapor phase. The growth method (K below | abbreviated as "MOVPEj") is made by the vapor phase growth method. The gases used are ammonia (NH3), carrier gas (H2, D, trimethylgallium (Ga (CH3) 3 (M, referred to as "TMG"), trimethylaluminum (A1 (CH3) 3) (hereinafter, referred to as "TMA"), trimethylindium (In (CH3) 3) (hereinafter, referred to as "TMI"), monosilane (SiH * ) M and magnesium dicyclopentadiene (Hs (C5Hs) 2) (U, referred to as "CP 2Mg"). First, the single-crystal substrate with the a-side as the main surface after washing with organic washing and heat treatment means The paper size installed in the reaction chamber of the M0VPE device is adapted to the Chinese National Standard (CNS) A4 (210 X 297 mm) I IK I ----1 ---- I ^ *---- -- -- (please Read the back of the precautions to fill out this page) Ministry of Economic Affairs Intellectual Property Office employees consumer cooperatives printed 7 η billion η Α7 Β7 Ministry of Economic Affairs Intellectual Property Office employees consumer cooperatives printed clothing V. Description (5) on the base invention. Next, the substrate was baked at a temperature of 1100 ° C while the osmium 2 was allowed to flow in the reaction chamber under normal pressure. Next, the temperature of the substrate 11 is lowered to 400C, and ii2, NH3 K, and TM A are supplied for this, and a film thickness of K of about 2 5 n m forms an A 1 N buffer layer 12. Secondly, the temperature of the substrate 11 is maintained at 1150ti, and NH3, TMGM, and monosilane are supplied to form a high-carrier sprinkler n + composed of GaN having a film thickness of about 4.0 / iB and an electron intensity of 2X10 18 / cm3. Layer 13. Next, the temperature of the substrate 11 was maintained at 1150t, and N2, Hz, NH3, TMG, TMAK, and monosilane were supplied to the substrate 11 to form a GaN film having a film thickness of about 0.5wi and an electron intensity of IX 10 18 / cm3. Cladding layer 14. After the above-mentioned cladding layer 14 is formed *, N2 or NH3 and TMG * are supplied thereto to form a barrier layer 151 composed of GaN having a film thickness of about 35¾. Next, 1 or} 12, NH3, TMGM, and TMI are supplied to form a well layer 152 composed of GaD.0InD.2N having a film thickness of about 35 Ϊ. Further, the barrier layer 151 and the well layer 152 are formed in four cycles under the same conditions, and a barrier layer 151 made of GaN is formed thereon. In this way, the light-emitting layer 15 of the MQW structure of 5 cycles is formed. Next, keep the temperature of the substrate 11 at 1100TC and supply it! ^ Or [] 2, NH3, TMG, TMA, M and CPzMg to form a coating layer 16 composed of p-type AU.15Gaa.BSN doped with Mg having a film thickness of about 50 ηm. Next, the temperature of the substrate 11 was kept at 1100 ° C, and 1 or}] 2, NH3, TMG, M, and CP2Mg were supplied to form a p-type GaN doped with Ms doped with a belly thickness of about 100 nm. Contact layer 17. Next > An etching mask is formed on the contact layer 17 to remove the mask in the specified area. The paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 8 ---- ^ ------- Assembly --- I--J — order ----- line (please read the precautions on the back before filling this page) η Α7 Β7 V. Description of the invention (6) Part of the layer contact: + + cover η + Cover, mold 14 mask cover is not covered, and 15, layer light is etched κ Yu Duan hand-etched child chicks, the quality of the body gas chlorine containing the anti-recovery layer is used to lend out Appearance of 3 1 layer + Π Make 8 1L polar electricity Π 3 1 layer + η In the opposite method, the light is etched and printed by the consumer property cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, and the light transmission relative to the contact layer 17 p Electrodes 18A, K and galvanic attenuator 20. As shown in FIG. 2, the light-emitting diode 100 thus formed is mounted on the flat portion 203 above the lead 203, and the n-electrode 18B is connected to the lead 201 by a gold wire 204, and the electrode is connected to the wire 201 by a gold wire 205. After the attenuator 20 is connected to the lead 202, resin molding M is performed to form a lens 206. On the other hand, the anode 301 of the Zener diode 300 (which constitutes a compensation element) is buried with the lead 201, and the cathode 302 of the Zener diode 300 is connected to the lead 202. Therefore, in the case where the electrostatic voltage higher than the operating voltage (about 3.5V) of the light emitting diode 100 is applied in the forward direction (the lead 202 maintains a positive potential to the lead 201) between the leads 202 and 201, Zeng Naer Electrode avalanche / collapse (non-destructive descent) occurs in the polar body 300, causing the overshoot current caused by the static voltage to flow through the Zener diode 300, thus protecting the light emitting diode 100 from the static voltage Its insulation is damaged. Furthermore, in the case where a static voltage in the reverse direction of the operating voltage of the light-emitting diode is applied between the leads 202 and 201, there is an excess current flowing in the forward direction that acts on the ordinary diode. The diode 300 protects the light emitting diode 100 from a high reverse voltage. In this way, even if a high static voltage in the forward and reverse directions is applied between the leads 202 and 201, the current will flow through the Zener diode, and the light emitting diode 100 is protected from the insulation damage caused by the static voltage. [Second practical example] This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210x297 mm) -9---------- I -Packing ---- 1 ---- Order- -1 --- line (please read the precautions on the back before filling this page) 0¾¾0 ^ a7 _B7_ V. Description of the Invention (7) This embodiment is shown in Figure 3, which is a bidirectional Zener diode The 310 and the emitting diode 100 are formed from the resin and installed in the lens 206. In this way, waterproofing of the Zener diode 310 and protection against mechanical external forces can be achieved. Where the left bidirectional Zener diode 310 is used as a compensation element, for the forward and reverse static voltage, a Zener collapse occurs (non-destructive dropout) * making the bidirectional operating resistance very small * therefore More reliable protection of the light emitting diode 100 can be achieved. [Third Embodiment] This embodiment is an example in which a Zener diode 330 is formed on the contact layer 17 of the light emitting diode 120 as shown in FIG. The formation from the buffer layer 12 to the contact layer 17 is as described above. Thereafter, in order to form the Zener diode 330, the same formation of the first layer 333 made of n-type GaN and the second layer 334 made of p-type GaN was performed. Next, after performing the etching in accordance with the same steps as the first embodiment, the p-electrode 18A, the electrode attenuator 20, the η electrode 18B of the light-emitting diode 120, and the p-electrode layer 33 of the Zener diode 330 are formed. n electrode layer 332. The light-emitting element thus formed is mounted on the flat portion 203 of the lead 201 as shown in FIG. 4-I-Γ 1 ---- installation -------- order --------- Line (please read the precautions on the back before filling out this page) The employee's consumer cooperative of the Ministry of Economic Affairs Bureau of the consumer cooperative printed device damage layer penetrating electrode is 30 nm 电 3 12 body pole pole 22 nanometer light was sent to the Connect to 'a and go to school. Ο The electric gold is borrowed from the yin to borrow 22 and the wire is 0.) The polar wire is the pole of the metal body η-a 1 * Λο ο is the same as the 2 wire, so it is buried like ground fcac Ϊ Ibid. Learn 02 electricity 2 on the wire 2¾ ....... οίώ Bow 2 on the wire and then connect gold to learn electricity on the 8 pole body. The pole 1 to 20 nanometer wire has led to the connection of the school electricity on the 3 2 2 wire and the borrowing of the 1 × 3 3 layer poles and the combination of 2 and 3A body poles. 2 3 body poles Erna Zengcheng created 10 paper sizes to apply Chinese National Standard (CNS) A4 (210 x 297 mm) 42 088 0 1 蝤 Α7 Β7 Printed by the Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs ) Then, the same effect as that of the first embodiment can be achieved. Further, in the first to third embodiments of the upper case, forward and reverse static electricity of 500 V was applied to the light-emitting diodes 100 and 120, and as a result, no breakdown of the insulation was observed. [Fourth Spring Example] In this embodiment, the light-emitting diode (circuit chip) 100 composed of a group M nitride semiconductor described in the first example is used to manufacture blue light-emitting diodes and green light-emitting diodes. A light-emitting diode. When the composition ratio of indium in the light emitting layer 15 is increased, a green light emitting hibiscus circuit board can be obtained. Furthermore, the red light-emitting diode (circuit chip) can be obtained from an InGaAlP-based compound semiconductor. In this example, the blue light-emitting diode 100B, the green light-emitting diode 100G, and the red light-emitting diode 100R are arranged in a resin frame. As shown in FIG. 5 and FIG. 6, the lead frame is used. 402 is insert-molded to form a resin frame 400. This resin frame 400 has a recessed portion recessed from the upper portion of the plaque, and a lead frame 402 is formed in which both the first chamber 404 and the second chamber 406 are exposed below. In this first chamber, circuit blocks of M-color light-emitting diodes 100B, green light-emitting diodes 100G, M, and red light-emitting diodes 100R are connected by die bonding. The lead 408 is a common terminal, and this terminal is connected to the η electrode of each diode circuit chip by a metal wire. The lead 410 is the anode terminal of the blue light-emitting diode 100B, and this terminal is connected to its ρ electrode by a gold wire. Similarly, the lead 412 is the anode terminal of the green light-emitting diode 100G, and is connected to its P electrode by a gold wire. The lead 414 is the anode terminal of the red light emitting diode 100R, and is connected to its P electrode by a gold wire. Press * Lead 41 6 for the size of the paper. Applicable to China National Standard (CNS) A4 (210 x 297 mm) -1 1-_--- \ ------ installation ------- -Order --------- Line-- (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 420880 ^ A7 _B7_ V. Description of the invention (9) Mask Used lead. Furthermore, the lead frames exposed in the second chamber 406 are provided with Zener diodes 300B and 300G. The anodes (ρ electrodes and cathodes (η electrodes) of the Zener diodes 300B, 300G are connected to the leads 410 and 412 by means of die bonding), and the light emitting diodes and The connection relationship of each Zener diode is the same as in Figure 1. And again, there is no Zener diode connected to the red light-emitting diode 300R. This is because it is the first group of InGaA 丨 P-based compound semiconductors. Nitride semiconductors have different occasions, which are caused by sufficient and sufficient electrostatic withstand voltage in the forward and reverse directions. In this way, each light-emitting diode circuit chip and the Zener diode circuit are connected to the lead frame and will be transparent. The resin is filled in the first chamber 4M and the second chamber 406. Thereby, the three primary colors of blue, green, and red can be obtained from the surface of the first chamber 404, or an optional mixed color can be obtained. This tritium light source device It can be used as the light source of the color image scanner. In any of the above embodiments, the Zoner diode can be a bidirectional Zoner diode. That is, it is also possible to use individual Zoner diodes to interact with each other. Components connected by reverse Yan Congcong, or such as PΠP, η The ρη-type laminate has a bidirectional Zener diode of the opposite conductivity type. Furthermore, it is also possible to use a catastrophic (electron avalanche avalanche / breakdown) of a unidirectional and bidirectional constant voltage diode. ) Diode instead of Zener diode. Furthermore * a lossy capacitor can also be used. For example, in the third example, in order to make Zener diode 330 form a bipolarity, let r (After the first layer 333 and the second p-layer 334 are laminated, the n-type third layer is laminated on the second p-layer to form the npn structure. This can make the double paper size applicable to Chinese national standards ( CNS) A4 specification (210 X 297 mm) ~ ~ ---- V ---; --- Shang -------- Order --------- line (please read the back first (Notes for filling in this page)

B7 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 五、發明說明（10 ) 向性曾納二極體形成於接觸層〗7上。 再者，在第三實施例中•使用電容器為補償元件之場合 ，在接觸層17上同樣地形成p電極18A，在該p電極18A上形 成由Si02構成之絕緣膜，而在其上形成金屬電極即可。 此外，在第三實施例中*雖然使曾納二極體彤成於接觸 層17上，但亦可以使單尙性或雙向性曾納二極體形成於與 青玉基板11上之發光二極體120不同之區段上。 再者，雖然在上述實施例中採用雙異接合構造，但亦可 K採用單異接合構造。再者，發光層15雖然被設定為MQW ，但亦可Μ設定為SQW。 此外，雖然上逑霣施例係揭示發光二搔體之例子，但即 % 使是雷射二極體，亦有可能同樣構成之。 另在上述第三實施例中，雖然為曾納二極體採用第I族 氮化物半導體*但亦可採用其他物質。 [圖式之簡單說明] 圖1為展示本發明之具體性第一實施例有關之發光二極 體之結構之结構圖。 圖2為展示第一實狍例有關之發光二極體之機構之結構 圖0 圖3為展示第二實施例有關之發光二極體之機構之結構 圖4為展示第三實胞例有關之發光二極體之層構造之斷 面圖。 圖5為展示第四實施例有關之光源裝置之機構之平面圖。 -13 - ' I----I ----裝--------訂---I ----線 (請先閱讀背面之注意事項再填寫本頁) 420880 ^ 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（I1) 圖6為展示第四實胞例有翮之光源裝置之結構透視圖。 [元件編號之說明] 10 :金屬層 11 :清玉基板 12 :媛衝層 13 ;高載體濃度η +層 14 :包覆層 15 :發光層 1 6 :包覆層 17 :接觸層 18Α : ρ電極 1 8 Β : η電極 20 !電極增損器 1 0 0 :發光二極體 100Β :發光二極體 100G ：發光二極體 100R :發光二極體 1 2 0 :發光二極體 ]5 1 :障堊層 152 :井層 201 :引腺 202 :引線 203 :平坦部 2 0 5 :金屬線 本紙張尺度適用中國國家標準（CNS)A4規袼（210 x 297公釐） -14 - _ —ί I----裝 ------- 訂---------線 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 〆 五、發明說明（12 ) 206 ： 透 鏡 220 ； 金 屬線 221 ： 金 屬線 222 ： 金 屬線 223 ： 金 觴線 300 ： 增 納二槿體 300B :增納二極體 300G :增納二極體 301 ： 陽 極 302 ： 陰 極 310 ： 增 納二極體 330 ： 增 納二極體 331 ： P電極層 332 ： η電極層 333 ： η型第一層 334 ： Ρ型第二層 400 ： 樹 脂框體 402 ： 引 線框 404 ： 第 一室 406 ： 第 二室 408 ： 引 線 410 ： 引 m 412 : 引 線 414 ： 引 線 416 ·* 引 線 I'‘------裝-------—訂 ---------線 (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用t國國家標準（CNS)A4規格（210 X 297公釐） 15B7 Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs The paper size is applicable to the Chinese National Standard (CNS) A4 (210 X 297 mm) V. Description of the invention (10) Anisotropic Zona diodes are formed in the contact layer. 7 on. Furthermore, in the third embodiment, when a capacitor is used as a compensation element, a p-electrode 18A is similarly formed on the contact layer 17, an insulating film made of SiO2 is formed on the p-electrode 18A, and a metal is formed thereon. The electrode is sufficient. In addition, in the third embodiment *, although the Zener diode is formed on the contact layer 17, a unipolar or bidirectional Zener diode may be formed on the light-emitting diode on the sapphire substrate 11. Body 120 on different sections. In addition, although the double-heterojunction structure is adopted in the above embodiment, K may be a single-heterojunction structure. Although the light emitting layer 15 is set to MQW, M may be set to SQW. In addition, although the above example shows an example of a light-emitting diode, even if it is a laser diode, it may be constructed in the same way. In the third embodiment described above, although a Group I nitride semiconductor * is used for the Zener diode, other materials may be used. [Brief description of the drawings] Fig. 1 is a structural diagram showing a structure of a light emitting diode according to a specific first embodiment of the present invention. Figure 2 shows the structure of the light-emitting diode mechanism related to the first example. Figure 3 shows the structure of the light-emitting diode mechanism related to the second embodiment. Figure 4 is related to the third example. Sectional view of the layer structure of a light emitting diode. 5 is a plan view showing a mechanism of a light source device according to a fourth embodiment. -13-'I ---- I ---- install -------- order --- I ---- line (please read the precautions on the back before filling this page) 420880 ^ Ministry of Economy Printed by the Consumer Property Cooperative of Intellectual Property Bureau A7 B7 V. Description of Invention (I1) Fig. 6 is a perspective view showing the structure of a light source device with an example of the fourth real cell. [Explanation of element number] 10: metal layer 11: sapphire substrate 12: yuanchong layer 13; high carrier concentration η + layer 14: cladding layer 15: luminescent layer 16: cladding layer 17: contact layer 18A: ρ Electrode 1 8 Β: η electrode 20! Electrode loss reducer 1 0 0: Light emitting diode 100B: Light emitting diode 100G: Light emitting diode 100R: Light emitting diode 1 2 0: Light emitting diode] 5 1 : Chalk layer 152: Well layer 201: Lead gland 202: Lead wire 203: Flat part 2 0 5: Metal wire The paper size is applicable to Chinese National Standard (CNS) A4 (210 x 297 mm) -14-_ — ί I ---- install ------- order --------- line (please read the precautions on the back before filling this page) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Explanation of the invention (12) 206: Lens 220; Metal wire 221: Metal wire 222: Metal wire 223: Gold wire 300: Zener diode 300B: Zener diode 300G: Zener diode 301: Anode 302: cathode 310: sonar diode 330: sonar diode 331: P electrode layer 332: n electrode layer 333: n-type first layer 334: p-type first Layer 400: Resin frame 402: Lead frame 404: First chamber 406: Second chamber 408: Lead 410: Lead m 412: Lead 414: Lead 416 · * Lead I '' ------ install ----- ------ Order --------- Line (Please read the precautions on the back before filling this page) This paper size is applicable to the national standard (CNS) A4 specification (210 X 297 mm) 15

Claims (1)

.0 .0 rv A8 B8 C8 D8 、申請專利範圍 1. 一種第I[族氮化物半導體發光元件:其在具有由包括 第1S族氮化物半導體之p層，相對於該P層之P電極，η層以 及相對於該η層之η電極所構成之發光部之發光元件中有下 逑特徵：在上逑Ρ電極與上述η電極之間連接有對付靜電壓 之補償元件，此補償元件為由下述三構件中之至少一構件 所構成：即對於上述Ρ電極與上述η電極間之順向之動作電 壓Κ上之順電壓，以定電壓導通之定電壓二極體；對於上 述ρ電極與上述η電極間之順向之動作電壓Μ上之順電壓暨 逆電壓* Κ定電壓導通之雙向性定電壓二極體；Μ及電容 器者。 2. 如申請專利範圍第1項之第Κ族氮化物半導體發光元 件，其中該補倌元件形成於與形成有該發光部之基板不同 之基板上，且該發光部與該補償元件之電學上之連接係藉 引線所行者。 3. 如申請專利範圍第2項之第m族氮化物半導體發光元 件，其中該補償元件形成於與形成有該發光部之基板不同 之基板上，而該發光部與該補償元件之電學上之連接係藉 引線所行，且該發光部及該補償元件係被樹脂密封者。 4. 如申請專利範圍第1項之第II族氮化物半導體發光元 件，其中該補償元件形成於與形成有該發光部之基板相同 之基板上者。 5. 如申請專利範圍第4項之第1H族氮化物半導體發光元 件|其中該補償元件形成於該發光部之該ρ層上者。 6. —種光源装置*其特徵為•配設有：引線榧；樹脂框 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐) ll'Hl'1"--"裝--------訂—I----—線 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作杜印製 一 1 - 〇B A8 B8 C8 D8 經濟部智慧財產局員工消費合作社印製 申請專利範圍 體，包括嵌型成形之引線框並且具有一室露出該引線框之 一部分；Μ及設在該室之引線框上之如申請專利範圍第1 項之發光元件，至少是發出藍色光之發光元件或發出绿色 光之發光元件者。 7. —種光源裝置，其特徵為，配設有：引線框；樹脂框 體，包括嵌型成形之引線框並且具有第一室及第二室均露 出該引線框之一部分；以及設在該第一室之引線框上之如 申請專利範圍第2項之發光元件，至少是發出藍色光之發 光元件及發出綠色光之發光元件，另在該第二室之引線框 上配設有該補償元件者。 8. 如申請專利範圍第6項之光源裝置，其中在該室之引 線框上又配設有發出紅色光之發光元件者。 9. 如申請專利範圍第7項之光源裝置，其中在該第一室 之引線框上又配設有發出紅色光之發光元件者。 10. 申請專利範圍第6項之光源裝置*其中對於裝載有該 等發光元件之該室|即對於裝載該等發光元件後之該室密 封Κ透明樹脂者。 11. 如申請專利範圍第7項之光源裝置，其中對於裝載有 該等發光元件之該室，即對於裝載該等發光元件後之該室 密封以透明樹脂者。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -L---Ρ---裝----I---訂---------線！ (請先閱讀背面之注意事項再填寫本頁) 2.0 .0 rv A8 B8 C8 D8, patent application scope 1. A Group I [nitride semiconductor light-emitting device: it has a p layer composed of a group 1S nitride semiconductor, with respect to the P electrode of the P layer, The n-layer and the light-emitting element of the light-emitting portion formed by the n-electrode with respect to the n-layer have the following characteristics: a compensation element for static voltage is connected between the upper HP electrode and the above-mentioned n-electrode. At least one of the following three components is constituted: for the forward voltage on the forward operating voltage K between the P electrode and the η electrode, a constant voltage diode that conducts at a constant voltage; for the ρ electrode and The forward voltage and reverse voltage on the forward operating voltage M between the η electrodes, and the two-way constant voltage diodes with constant voltage conduction; and M and capacitor. 2. For example, the group K nitride semiconductor light-emitting element of the scope of the patent application, wherein the supplementary element is formed on a substrate different from the substrate on which the light-emitting portion is formed, and the light-emitting portion and the compensation element are electrically The connection is performed by the lead. 3. For example, the m-th nitride semiconductor light-emitting element of the second patent application range, wherein the compensation element is formed on a substrate different from the substrate on which the light-emitting portion is formed, and the light-emitting portion is electrically connected to the compensation element. The connection is made by a lead, and the light emitting part and the compensation element are sealed by resin. 4. For example, the Group II nitride semiconductor light-emitting element of the scope of patent application, wherein the compensation element is formed on the same substrate as the substrate on which the light-emitting portion is formed. 5. For example, the Group 1H nitride semiconductor light-emitting element of the scope of patent application | wherein the compensation element is formed on the p layer of the light-emitting part. 6. —A kind of light source device * characterized by: • Equipped with: lead wire; resin frame paper size applicable to Chinese National Standard (CNS) A4 (210 X 297 mm) ll'Hl'1 "-" -------- Order—I ----— line (please read the precautions on the back before filling this page) Dumpling Cooperation of Employees and Intellectual Property Bureau of the Ministry of Economic Affairs 1-〇B A8 B8 C8 D8 The Intellectual Property Bureau employee's consumer cooperative of the Ministry of Economic Affairs prints the scope of patent applications, including insert-shaped lead frames with a room exposing a part of the lead frame; M and the lead frame provided on the room as described in the first patent scope The light-emitting element of the item is at least a light-emitting element that emits blue light or a light-emitting element that emits green light. 7. A light source device, characterized in that it is provided with: a lead frame; a resin frame body including an insert-molded lead frame and having a first chamber and a second chamber both exposing a part of the lead frame; and The light-emitting element in the lead frame of the first room, as described in the second item of the patent application, is at least a light-emitting element that emits blue light and a light-emitting element that emits green light, and the compensation is provided on the lead frame of the second room. Component. 8. If the light source device of the scope of application for patent No. 6 is used, a light emitting element emitting red light is arranged on the lead frame of the room. 9. The light source device according to item 7 of the patent application, wherein a red light emitting element is arranged on the lead frame of the first chamber. 10. The light source device in the scope of the patent application No. 6 *, wherein for the room in which the light-emitting elements are mounted | that is, in the room after the light-emitting elements are mounted, the transparent resin is sealed. 11. If the light source device according to item 7 of the scope of the patent application is applied to the chamber in which the light-emitting elements are mounted, that is, the chamber in which the light-emitting elements are mounted is sealed with a transparent resin. This paper size applies to Chinese National Standard (CNS) A4 (210 X 297 mm) -L --- P --- Packing ---- I --- Order --------- Line! (Please read the notes on the back before filling this page) 2
TW88105995A 1998-04-15 1999-04-15 Group III nitride semiconductor light-emitting element and light source device TW420880B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12291898A JPH11298041A (en) 1998-04-15 1998-04-15 Group iii nitride semiconductor light-emitting element and light source device

Publications (1)

Publication Number Publication Date
TW420880B true TW420880B (en) 2001-02-01

Family

ID=14847829

Family Applications (1)

Application Number Title Priority Date Filing Date
TW88105995A TW420880B (en) 1998-04-15 1999-04-15 Group III nitride semiconductor light-emitting element and light source device

Country Status (2)

Country Link
JP (1) JPH11298041A (en)
TW (1) TW420880B (en)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6577072B2 (en) * 1999-12-14 2003-06-10 Takion Co., Ltd. Power supply and LED lamp device
US6812481B2 (en) 2001-09-03 2004-11-02 Toyoda Gosei Co., Ltd. LED device and manufacturing method thereof
KR100506735B1 (en) * 2003-06-26 2005-08-08 삼성전기주식회사 Multi color light emitting diodes package
EP1587151A3 (en) * 2004-04-17 2011-09-28 LG Electronics, Inc. Semiconductor light emitting device and fabrication method thereof
JP4747516B2 (en) 2004-06-08 2011-08-17 富士ゼロックス株式会社 Vertical cavity surface emitting semiconductor laser device
TWI244748B (en) * 2004-10-08 2005-12-01 Epistar Corp A light-emitting device with a protecting structure
JP4697397B2 (en) * 2005-02-16 2011-06-08 サンケン電気株式会社 Composite semiconductor device
KR100632002B1 (en) * 2005-08-02 2006-10-09 삼성전기주식회사 Side-view light emitting diode having protective element
JP2007280983A (en) * 2006-04-03 2007-10-25 Nichia Chem Ind Ltd Light-emitting device
JP5283539B2 (en) 2009-03-03 2013-09-04 シャープ株式会社 LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE UNIT, AND LIGHT EMITTING DEVICE MANUFACTURING METHOD
JP5726409B2 (en) 2009-07-01 2015-06-03 シャープ株式会社 Light emitting device and method for manufacturing light emitting device
JP5623062B2 (en) 2009-11-13 2014-11-12 シャープ株式会社 Light emitting device and manufacturing method thereof
JP2011151268A (en) 2010-01-22 2011-08-04 Sharp Corp Light-emitting device
JP5890233B2 (en) * 2011-05-19 2016-03-22 ローム株式会社 LED module and image sensor module
JP2013078102A (en) * 2011-06-17 2013-04-25 Rohm Co Ltd Image sensor module

Also Published As

Publication number Publication date
JPH11298041A (en) 1999-10-29

Similar Documents

Publication Publication Date Title
TW420880B (en) Group III nitride semiconductor light-emitting element and light source device
TW404074B (en) The nitride semiconductor light illuminating device of the third group elements in periodic table
TWI351773B (en) Light emitting device
TW437110B (en) Semiconductor light emitting device
JP4978014B2 (en) Semiconductor light emitting device and manufacturing method thereof
JP3298390B2 (en) Method for manufacturing nitride semiconductor multicolor light emitting device
JP3424629B2 (en) Nitride semiconductor device
Zhou et al. GaN-based flip-chip LEDs with highly reflective ITO/DBR p-type and via hole-based n-type contacts for enhanced current spreading and light extraction
JP4507594B2 (en) Semiconductor light emitting device
US10331057B2 (en) Light emitting element device including light emitting thyristor and optical print head including the light emitting element device
JP2000349337A (en) Nitride semiconductor element
EP1419535A1 (en) Multicolor light-emitting lamp and light source
CN104737308A (en) Light-emitting device
KR20080089859A (en) Nitride semiconductor light emitting device and manufacturing method thereof
JP2007234648A (en) Method of manufacturing nitride semiconductor light-emitting element
CN109148652A (en) Inorganic light-emitting diode display panel and preparation method thereof and display device
JP2007234647A (en) Method of manufacturing nitride semiconductor light-emitting element
JP3758562B2 (en) Nitride semiconductor multicolor light emitting device
JP2003204078A (en) Nitride semiconductor element
CN205645857U (en) Ultraviolet ray emitting diode and have its ultraviolet light emitting component
JP4569858B2 (en) Method for manufacturing light emitting device
JPH09148625A (en) Iii-group nitride semiconductor light emitting element
KR20080024788A (en) Nitride semiconductor light-emitting device and manufacturing method thereof
JP2000332288A (en) Gallium nitride system semiconductor light emitting element and its manufacture
KR101823685B1 (en) Growth substrate, semiconductor device and method for fabricating the same

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees