CN205645857U - Ultraviolet ray emitting diode and have its ultraviolet light emitting component - Google Patents
Ultraviolet ray emitting diode and have its ultraviolet light emitting component Download PDFInfo
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- CN205645857U CN205645857U CN201620365810.1U CN201620365810U CN205645857U CN 205645857 U CN205645857 U CN 205645857U CN 201620365810 U CN201620365810 U CN 201620365810U CN 205645857 U CN205645857 U CN 205645857U
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- 239000004065 semiconductor Substances 0.000 claims abstract description 61
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 238000007599 discharging Methods 0.000 claims abstract description 3
- 229910002704 AlGaN Inorganic materials 0.000 claims description 75
- 230000004888 barrier function Effects 0.000 claims description 35
- 238000005036 potential barrier Methods 0.000 claims description 28
- 239000000919 ceramic Substances 0.000 claims description 21
- 230000005540 biological transmission Effects 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- 230000005855 radiation Effects 0.000 claims description 3
- 230000000694 effects Effects 0.000 claims description 2
- 238000000605 extraction Methods 0.000 abstract description 4
- 230000017525 heat dissipation Effects 0.000 abstract description 4
- 229910002601 GaN Inorganic materials 0.000 description 10
- 230000005611 electricity Effects 0.000 description 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000002153 concerted effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
The utility model provides an ultraviolet ray emitting diode and have its ultraviolet light emitting component. The ultraviolet ray emitting diode include: the base plate, semiconductor layer folds the structure, sets up on the base plate, and first electrode and second electrode, setting up on semiconductor layer folds the structure, semiconductor layer folds the structure and has 4 mu m to 10 mu m's thickness, and the base plate has the thickness of 400 mu m to 500 mu m. Folding the structure with semiconductor layer and comparing, the used thickness is more than 40 times, is the big base plate more than 100 times even to the base plate can hold semiconductor layer more and fold the heat that the structure generated. In addition, because the surface increased of base plate, therefore also increase through the heat dissipation of substrate surface. It is further, fold the structure with semiconductor layer and compare, adopt extremely thick base plate to fold light that the structure generated from semiconductor layer and easily through the substrate surface outside of discharging, improved light extraction efficiency.
Description
Technical field
This utility model relates to light emitting diode and has its light-emitting component, more specifically, relates to one
Plant the light emitting diode of release ultraviolet and there is its light-emitting component.
Background technology
It is said that in general, gallium nitride quasiconductor is as full-color EL display device, traffic light, commonly shine
Bright and the light source of optical communication equipment, is widely used in ultraviolet, blue green light emitting diode (light
Emitting diode) or laser diode (laser diode).Particularly InGaN (InGaN) chemical combination
Thing quasiconductor is narrow and attract tremendous attention and carry out numerous studies due to band gap.
On the other hand, the light-emitting component of release nearultraviolet rays is for counterfeit money discriminating, hardening of resin and ultraviolet
Treatments etc., furthermore it is possible to combine with fluorophor, present the luminous ray of various color.Nearultraviolet rays one
As censure the ultraviolet of about 320nm～390nm wave-length coverage.GaN has the band-gap energy of about 3.42eV,
This energy is corresponding to the luminous energy of about 365nm wavelength.Therefore, InGaN is used as the light-emitting component of well layer,
Can be according to the amount of In for discharging the light of more than 365nm, i.e. release 365nm～390nm model
The nearultraviolet rays enclosed.
On the other hand, in order to discharge the light of the wave-length coverage of below 365nm, need formation to comprise Al's
Well layer.For example, it is possible to form AlGaN well layer, manufacture the light emitting diode of release ultraviolet.But,
When comprising the ultraviolet LED of AlGaN well layer, not only it is difficult to generate efficiently light in well layer,
And, the ultraviolet generated, it is the most tired that the deep UV of particularly below 320nm is discharged into outside
Difficulty, external quantum efficiency is the lowest, therefore, during driving ultraviolet LED, there is generation
The problem of big calorimetric.
Accordingly, it would be desirable to improve external quantum efficiency and the heat dissipation characteristics of ultraviolet LED, it is desirable to suitable
Close the ultraviolet ray emitting element mounting this ultraviolet LED.
Utility model content
Technical purpose
A purpose of the present utility model is to provide a kind of luminescence-utraviolet two pole improving external quantum efficiency
Manage and have its ultraviolet ray emitting element.
Another purpose of the present utility model is to provide a kind of luminescence-utraviolet two pole improving heat dissipation characteristics
Pipe and ultraviolet ray emitting element.
Technical scheme
The ultraviolet LED of one embodiment of this utility model includes substrate, is arranged on substrate
Semiconductor stacked structure body and the first electrode being arranged on semiconductor stacked structure body and the second electrode,
Semiconductor stacked structure body has 4 μm thickness to 10 μm, and substrate has 400 μm to 500 μm
Thickness.
Compared with semiconductor stacked structure body, using thickness is more than 40 times, even more than 100 times
Large substrates, thus substrate can accommodate the heat that semiconductor stacked structure body generates more.Further, since
The surface area of substrate increases, thus also increases the heat radiation by substrate surface.Furthermore, with partly lead
Body laminate structure is compared, and uses extremely thick substrate, thus the light generated from semiconductor stacked structure body holds
Easily being discharged to the outside by substrate surface, light extraction efficiency is improved.
In several embodiments, substrate can include that the periphery of the side along substrate is formed with the shape of band,
And along thickness direction multiple matsurfaces spaced apart from each other of substrate.Such as, substrate can include at least 4
Matsurface.
The matsurface formed on surface can be by mean of make use of drawing of stealthy laser (stealth laser)
Sheet operation and the face that formed.The inner full-reflection that matsurface suppression can occur in substrate side surfaces, improves and sends out
The light extraction efficiency of optical diode.
Ultraviolet LED can also include insulating barrier, covers semiconductor stacked structure body, and has
Make multiple peristomes that the first electrode and the second electrode expose.Ultraviolet LED can make substrate court
Above semiconductor stacked structure body face-down bonding facing downward.Now, insulating barrier prevents the first electrode and second
Electric pole short circuit.
It is multiple convex that ultraviolet LED can also include being arranged on the first electrode and the second electrode
Block.By multiple projections, described ultraviolet LED can be with face-down bonding in base station or printed circuit
Plate etc..
On the other hand, semiconductor stacked structure body may include that n-type semiconductor layer；And table top, position
In n-type semiconductor layer, and include active layer and the p-type semiconductor layer being positioned on active layer.First electricity
Extremely can be arranged in n-type semiconductor layer, the second electrode can be arranged on table top.Such as, the first electricity
Pole can be with Ohmic contact n-type semiconductor layer, and the second electrode can be with Ohmic contact p-type semiconductor layer.
Further, the first electrode can include n contact layer and n upper layer, and the second electrode can include
P-contact layer and p upper layer.It addition, n upper layer and p upper layer can be the layer of same substance.
Such as, n contact layer can be formed by Ti/Al, and P-contact layer can be formed by Pt or ITO, on n
Portion's layer and p upper layer can be formed by Ni/Au.Ni/Au improves the engaging force of projection.
On the other hand, n-type semiconductor layer may include that N-shaped AlGaN layer；And undoped AlN
Layer, is arranged between substrate and N-shaped AlGaN layer.By arranging AlN layer, the crystallization of AlGaN layer
Quality is improved.
On the other hand, active layer can include that the multiple AlGaN potential barrier alternateing stacking are with multiple
AlGaN well layer, p-type semiconductor layer can include AlGaN electronic barrier layer and p-type GaN layer.
Multiple AlGaN potential barrier and N-shaped AlGaN layer can contain more than multiple AlGaN well layer
Al, therefore, the light that well layer generates can pass through AlGaN potential barrier and N-shaped AlGaN layer.
It addition, AlGaN electronic barrier layer contains Al more than N-shaped AlGaN layer.AlGaN electronics
Barrier layer is placed in electronics in active layer, makes electronics increase with the recombination rate in hole.AlGaN electronic blocking
Layer can contain Al more than other barrier layer in addition to most end AlGaN potential barrier.
On the other hand, the most end AlGaN potential barrier between active layer and AlGaN electronic barrier layer,
Al can be contained more than AlGaN electronic barrier layer.Most end AlGaN potential barrier can have than it
The thickness that its barrier layer is thinner, improves the crystalline quality of the AlGaN electronic barrier layer being arranged on.
Most end AlGaN potential barrier can be AlxGa1-xN shell (0.9 < x < 1).That is, the molar fraction of Al
X can be more than 0.9.
On the other hand, n-type semiconductor layer also can include between N-shaped AlGaN layer and active layer
AlyGa1-yN shell (0.85 < y < 0.95).AlyGa1-yN shell is more more than the AlGaN potential barrier being arranged on
Ground is containing Al.AlyGa1-yN shell improves the crystalline quality of the active layer being arranged on.
On the other hand, can be y < x.The AlGaN electronic blocking being positioned in most end AlGaN potential barrier
Layer ratio is positioned at AlyGa1-yAlGaN potential barrier on N shell contains Al more, thus most end AlGaN gesture
Barrier layer contains and compares AlyGa1-yThe more Al of N shell.
Active layer can discharge the ultraviolet of below 320nm, specifically, for the ultraviolet of below 300nm
Line, more specifically, for the ultraviolet of below 290nm.To this end, well layer and barrier layer in active layer
Ratio of components may determine that.
The ultraviolet ray emitting element of the another embodiment of this utility model includes the luminescence of embodiment described above
Diode.
Further, described ultraviolet ray emitting element can also include base station, and light emitting diode can be logical
Cross multiple projection face-down bonding on base station.
Owing to ultraviolet LED face-down bonding is on base station, discharge light thereby through substrate.Separately
Outward, the heat that semiconductor stacked structure body generates can be discharged by substrate surface, and further, heat is permissible
Discharged by base station.
Ultraviolet ray emitting element can also include forming the ceramic main body of sidewall and being arranged at ceramic main body
The heat transmission metallic plate of bottom, base station can be arranged on heat transmission metallic plate.
Heat transmission metallic plate is together used such that it is able to ultraviolet LED is generated with ceramic main body
Heat, easily discharged by heat transmission metallic plate.
Further, ultraviolet ray emitting element be additionally may included in ceramic main body outer wall expose multiple outside
Portion goes between and is connected in multiple inner leads of multiple outside lead from the inside of ceramic main body.
It addition, ultraviolet ray emitting element can also include cover ceramic main body upper entrance glass plate or
Quartz plate.
The effect of utility model
According to embodiment of the present utility model, it is provided that heat dissipation characteristics is excellent, external quantum efficiency obtains
The ultraviolet LED improved and the light-emitting component with it.Further, with ceramic main body together
Utilize heat transmission metallic plate, it is provided that can easily discharge the heat of ultraviolet LED generation
Ultraviolet ray emitting element.
Accompanying drawing explanation
Fig. 1 is the schematically plane of the ultraviolet ray emitting element for one embodiment of this utility model is described
Figure.
Fig. 2 shows the schematically profile of Fig. 1.
Fig. 3 is the enlarged fragmentary cross section of Fig. 2.
Fig. 4 is schematically putting down of the ultraviolet LED for one embodiment of this utility model is described
Face figure.
Fig. 5 is the schematically profile of the intercepting line A-A intercepting along Fig. 4.
Fig. 6 is the part sectioned view of the ultraviolet LED being exaggerated Fig. 5.
Fig. 7 is schematically putting down of the ultraviolet LED for the another embodiment of this utility model is described
Face figure.
Detailed description of the invention
With reference to the accompanying drawings, embodiment of the present utility model is described in detail.Embodiment described below be for
Thought of the present utility model is fully transmitted and conduct to this utility model person of ordinary skill in the field
Example provides.Therefore, this utility model is not limited to embodiment explained below, can be with other shape
State embodies.And, in the accompanying drawings, for facility, the width of element, length, thickness etc.,
Can also show turgidly.It addition, when be recited as an element another element " top " or " above "
Time, it is not only each several part in " the tight top " of other parts or the situation of " above tightly ", is additionally included in each unit
The situation of other element is there is between part and other element.Throughout the specification, identical reference notation
Number represent identical element.
Fig. 1 is the schematically plane of the ultraviolet ray emitting element for one embodiment of this utility model is described
Figure.Fig. 2 shows the schematically profile of Fig. 1.Fig. 3 is the enlarged fragmentary cross section of Fig. 2.
Referring to figs. 1 through Fig. 3, ultraviolet ray emitting element 100 includes ultraviolet LED 40.Separately
Outward, ultraviolet ray emitting element 100 can include shell 10, heat transmission metallic plate 20, base station 30, purple
Outside line transmitting plate 50 and adhesion substance layer 55.
Shell 10 can include the ceramic main body 11 forming sidewall, and includes inner lead 13,15 and
Outside lead 17.Further, shell 10 can include conductive adhesive pad 19.
Ceramic main body 11 can be with such as aluminium oxide (Al2O3), the ceramic masses of AlN etc. formed.Special
Not, AlN is high due to thermal conductivity, outside being conducive to the heat that ultraviolet LED is generated to be discharged into
Portion.
Inner lead can include vertically going between 13 and horizontal lead wire 15, from the inside of ceramic main body 11 even
Receive outside lead 17.Horizontal lead wire 15 can expose in the inner space of shell 10, vertically goes between 13
Horizontal lead wire 15 and outside lead 17 can be connected.
On the other hand, conductive adhesive pad 19 can be arranged at the upper entrance part of shell 10, ultraviolet
Line transmitting plate 50 is placed on it.Shell 10 can utilize low temperature Low fire ceramic technology simultaneously to be formed.
Heat transmission metallic plate 20 is arranged at the bottom of ceramic main body 11, and is attached to ceramic main body 11.As
Shown in Fig. 3, heat transmission metallic plate 20 can include base plate 21 and the tack coat formed on base plate 21
23.Base plate 21 can be formed with copper or tungsten, and tack coat 23 can be formed with Ni/Au.Heat transmission metal
Plate 20 can be configured so that and together burnt till with shell 10 in advance before burning till shell 10, thus is attached to
Ceramic main body 11.
Base station 30 limits the most especially, and can include matrix 31, bond pattern 33 and lower metal
Layer 35.Matrix 31 such as can be formed with the AlN that excellent heat resistance, thermal conductivity are relatively high.It addition,
Bond pattern 33 can be formed with Cu/Au.Cu electrical conductivity excellent, Au can be easily at it
Upper welding metal coupling.Bond pattern 33 is divided into positive pole and negative pole two parts.
On the other hand, base station 30 can be bonded on heat transmission metallic plate 20 by binding agent 25.
Binding agent 25 can use the Ag cream that thermal conductivity is excellent.
Ultraviolet LED 40 is such as mounted on base station 30 by multiple projection 45a, 45b.
Ultraviolet LED 40 can be with face-down bonding.In the present embodiment, although to luminescence-utraviolet two
The situation that pole pipe 40 is mounted on base station 30 illustrates, but not this utility model is necessarily limited to
This.For example, it is also possible to deform to omit base station 30, heat transmission metallic plate 20 mounts luminescence-utraviolet two
Pole pipe 40.For the structure of ultraviolet LED 40, it is described in detail with reference to Fig. 4 to Fig. 6.
On the other hand, the bond pattern 33 of base station 30 is electrically connected in multiple water by multiple wires 35
Flat lead-in wire 15, therefore, ultraviolet LED 40 can supply electric power.
On the other hand, the entrance side in ceramic package main body 11 can be provided with ultraviolet transmitting plate 50.
Ultraviolet transmitting plate 50 can be glass plate or quartz plate.Ultraviolet transmitting plate 50 is through from light-emitting diodes
The ultraviolet of pipe 40 release.Ultraviolet transmitting plate 50 utilizes welding material of metal, such as, utilize Ni/Au
Etc. being welded in conductive adhesive pad 19.Conductive adhesive pad 19 is in order to strengthen the viscous of ultraviolet transmitting plate 50
Make a concerted effort and use, it is also possible to omit.Shell 10 inner space is sealed by ultraviolet transmitting plate 50,
Protection light emitting diode 40 is not by external environment influence.
Fig. 4 be the ultraviolet LED 40 for one embodiment of this utility model is described schematically
Plane graph, Fig. 5 is the schematically profile of the intercepting line A-A intercepting along Fig. 4, and Fig. 6 is to be exaggerated
The part sectioned view of the ultraviolet LED of Fig. 5.
First, with reference to Fig. 4 and Fig. 5, ultraviolet LED 40 includes substrate 401 and semiconductor layer
Lamination structural body (is such as represented by reference 410,420,430).
Substrate 401 could be for making the growth substrate of gallium nitride pre-coating growth, for example, it may be
Sapphire, carborundum, gallium nitride base board.Particularly, in order to provide deep UV light emitting diode, base
Plate 401 can be sapphire substrate.
Substrate 401 can be quadrangle form on the whole, but not the shape of substrate is defined in this.Another
Aspect, in the present embodiment, the thickness of substrate 401 can have in 400 μm to 500 μ m
Value.Substrate 401 is the thickest, (mainly releases to substrate 401 from the semiconductor stacked structure body of photogenerated
The face given out light) distance the longest, therefore, substrate 401 below in angle of light reduce, light extraction is imitated
Rate is improved.The integral thickness of semiconductor stacked structure body can be substantially that 5 μm are to 10 μ m
In, substrate 401 can have the thickness of more than 40 times of semiconductor stacked structure body, further, tool
There is the thickness of more than 100 times.
On the other hand, substrate 401 can include the multiple matsurfaces formed in strip form along its side
R.Multiple matsurface R can be provided spaced along the thickness direction of substrate 401.Multiple matsurface R
In order to substrate 401 is divided into separate radiation diode, it is possible to use stealthy laser performs dicing processes
Being formed, the region between multiple matsurface R becomes the plane of disruption.
On the other hand, semiconductor stacked structure body is formed with the gallium nitride semiconductor layer containing aluminum, including
N-type semiconductor layer 410 and the table top M being positioned in n-type semiconductor layer 410.Table top M includes active layer
420 and p-type semiconductor layer 430, and a part for n-type semiconductor layer 410 can be included.Active layer
420 are arranged between n-type semiconductor layer 410 and p-type semiconductor layer 430.Semiconductor multilayer is tied
Whole Rotating fields of structure body, describe in detail later in reference to Fig. 6.
As shown in Figure 4, table top M can be formed with H type shape, but is not limited to this.Table top M
Can have the wide part of width and narrow part, in the diagram, it is illustrated that in the part that two width are wide
Between be provided with the situation of part of a narrow width.Be different from this, table top M can also include three with
Part that upper width is wide and the part of narrow width being respectively arranged between the part that multiple width is wide.So
Form the table top M of the shape with the part being provided with narrow width between the part that multiple width are wide, from
And can be provided in luminescence-utraviolet two pole of the light output characteristics showing excellence under high current densities
Pipe.
Table top M is arranged to the shape on island in n-type semiconductor layer 410.That is, table top M is by N-shaped half
The surface of conductor layer 410 around.
Ultraviolet LED 40 can also include the first electrode 450 and the second electrode 460.First electricity
Pole 450 is arranged in n-type semiconductor layer 410, and the second electrode 460 is arranged on table top M.
First electrode 450 includes the n contact layer 451 of Ohmic contact n-type semiconductor layer 410 and is arranged at
The n upper layer 453 on n contact layer 451 top.N contact layer 451 can be formed with Ti/Al, n upper layer
453 can be formed with Ni/Au.
Second electrode 460 includes the P-contact layer 461 of Ohmic contact p-type semiconductor layer 430 and is arranged at
The p upper layer 463 on P-contact layer 461 top.P-contact layer 461 can be by Pt or tin indium oxide (ITO)
Being formed, p upper layer 463 can be formed by Ni/Au.P upper layer 463 is with the material with n upper layer 453
Expect that identical material is formed, thus they together can be formed in same operation.N upper layer 453 and p
Upper layer 463 is covered each by n contact layer 451 and P-contact layer 461, prevents them impaired, further
Ground, improves n projection 45a and the bonding force of p projection 45b.
On the other hand, insulating barrier 470 covers n-type semiconductor layer 410 and table top M.Insulating barrier 470 covers
Cover the first electrode 450 and the second electrode 460, and can have the multiple peristomes making them expose
470a、470b.Insulating barrier 470 can be formed with silicon oxide layer or the monofilm of silicon nitride film or multimembrane, enters
One step ground, it is also possible to formed with the distributed Bragg reflector of alternately laminated silicon oxide layer with titanium oxide film.
N projection 45a and p projection 45b can by means of insulating barrier 47 multiple peristome 470a,
470b and formed on the first electrode 450 of exposing and the second electrode 460.N projection 45a and p projection 45b
It can be the stud bumps formed with Au.As it is shown in figure 5, n projection 45a can be than p projection 45b phase
To longer, the upper surface of n projection 45a and p projection 45b may be located on the same face.Therefore, base station is worked as
When the bond pattern 33 of 30 is formed with identical height, can easily ultraviolet LED 40 be pasted
It is loaded in the bond pattern 33 of base station 30.
In the present embodiment, illustrate that n projection 45a and p projection 45b are at the first electrode 450 and second
The situation formed on electrode 460, but these multiple projection 45a, 45b can also be formed on base station 30,
And it is welded in light emitting diode 40.
With reference to Fig. 6, the most as previously described, the semiconductor multilayer knot of ultraviolet LED 40
Structure body includes n-type semiconductor layer 410, active layer 420 and the p-type semiconductor being arranged on substrate 401
Layer 430.These semiconductor layers 410 and 430 and active layer 420, Organometallic Vapor Phase can be utilized to sink
Long-pending (MOCVD), molecular beam epitaxy (MBE), hydride gas-phase epitaxy (HVPE) technology and shape
Become.
On the other hand, n-type semiconductor layer 410 can include N-shaped AlGaN layer 413 and be arranged at substrate
AlN layer 411 between 401 and N-shaped AlGaN layer, active layer 420 includes alternateing stacking
AlGaN potential barrier 421,423,425,427 and AlGaN well layer 422,424,426.It addition, p
Type semiconductor layer 430 can include AlGaN electronic barrier layer 431 and p-type GaN layer 433.
Multiple AlGaN well layer 422,424,426 select the ratio of components of Al Yu Ga, in order to release request
The ultraviolet of wavelength.Such as, multiple AlGaN well layer 422,424,426 can discharge and have
The ultraviolet of below 320nm wavelength, has the ultraviolet of below 300nm wavelength, more specifically further
Ground, has the ultraviolet of the wavelength of below 290nm.Now, multiple AlGaN well layer 422,424,
The molar fraction of the Al contained in 426 can be about in the range of 0.4 to 0.6.
Multiple AlGaN potential barrier 421,423,425,427 and N-shaped AlGaN layer 413 ratio are multiple
AlGaN well layer 422,424,426 contains Al more.Therefore, multiple AlGaN potential barrier 421,
423,425,427 and N-shaped AlGaN layer 413 have than multiple AlGaN well layer 422,424,426
Broader band gap, it is thus possible to make the light transmission that multiple well layer generates.
Multiple AlGaN potential barrier 421,423,425 are thicker than multiple well layer 422,424,426, especially
It is that the first AlGaN potential barrier 421 is thicker than other barrier layer.Most end AlGaN potential barrier 427 is permissible
In multiple AlGaN potential barrier the thinnest.Such as, the first AlGaN potential barrier 421 can have 7nm
Thickness to 15nm, most end AlGaN potential barrier 427 can have 1nm to 3nm model
Enclose interior thickness.In addition multiple AlGaN potential barrier 423,425 can have 5nm to 10nm model
Enclose interior thickness.Multiple AlGaN well layer 422,424,426 can have roughly the same thickness, can
To have the thickness of about 1nm to 4nm.
On the other hand, AlGaN electronic barrier layer 431 contains Al more than N-shaped AlGaN layer 413.
Further, AlGaN electronic barrier layer 431 is than remaining in addition to most end AlGaN potential barrier 427
AlGaN potential barrier 421,423,425 contains Al more.AlGaN electronic barrier layer 431 prevents electricity
Son is compound and exceeds active layer 420, improves the recombination rate of electronics and hole.
Most end AlGaN potential barrier between active layer 420 and AlGaN electronic barrier layer 431
427, contain Al more than AlGaN electronic barrier layer 431.Most end AlGaN potential barrier 427 is
AlxGa1-xN shell (0.9 < x < 1), the molar fraction of Al can be more than 0.9.
Most end AlGaN potential barrier 427 improves the crystalline quality of the electronic barrier layer 431 being formed on,
The crystalline quality preventing active layer 420 by means of electronic barrier layer 431 is impaired.
On the other hand, AlN layer 411 can be the layer of unintentionally impurity, the first electricity shown in Fig. 5
Pole 450 can contact N-shaped AlGaN layer 413.
On the other hand, n-type semiconductor layer 410 can N-shaped AlGaN layer 413 and active layer 420 it
Between also include AlyGa1-yN shell 415, molar fraction y of Al meets 0.85 < y < 0.95.AlyGa1-yN shell
415 Al comprising content more more than N-shaped AlGaN layer 413, thus improve the gesture being formed on
The crystalline quality of barrier layer 421, and then improve the crystalline quality of active layer 420 entirety.AlyGa1-yN shell
415 are formed with the thickness thinner than barrier layer 421.Such as, AlyGa1-yN shell 415 can with 1nm extremely
The thickness of 3nm scope is formed.
AlyGa1-yThe Al molar fraction of N shell 415 is less than Al mole of most end AlGaN potential barrier 427
Mark (that is, y < x).This is because, at AlyGa1-yThe Al of the barrier layer 421 formed on N shell 415
Content contains less than the Al of the AlGaN electronic barrier layer 431 formed in most end AlGaN potential barrier 427
Amount.
On the other hand, electronic barrier layer 431 can be formed relatively thickly, for example, it is possible to have
Thickness in the range of 20nm to 40nm.It addition, the second electrode 460 shown in Fig. 5 can contact p GaN
Layer 433.P GaN layer 433 can be thicker than electronic barrier layer 431, such as, with 300nm to 600nm
Thickness formed.
In N-shaped AlGaN layer 413, the n-type dopant of the such as silicon that adulterates, in p GaN layer 433
In, the p-type dopant of the such as Mg that adulterates.In electronic barrier layer 431, the p of the such as Mg that also adulterates
Type alloy.
Fig. 7 is the outline of the ultraviolet LED 40a for the another embodiment of this utility model is described
Property plane graph.
With reference to Fig. 7, the ultraviolet LED 40a of the present embodiment and luminescence-utraviolet described above
Diode 40 is similar, and but, the difference existed is, table top M is positioned at substrate 401 substantially
The position of central authorities, the multiple peristome 470a making the first electrode 450 expose of insulating barrier 470 are arranged at purple
Four corners of outside line light emitting diode 40a.Therefore, multiple n projection 45a can be arranged at multiple
On the first electrode 450 that is that peristome 470a exposes and that be in four corners.
As it has been described above, the position that the position of table top M or shape and multiple n projection 45a are formed, permissible
Diversely change.
Above embodiment of the present utility model is illustrated, but not this utility model is defined in described
Embodiment.It addition, for the facility illustrated, the most together illustrate many elements, but
A part of embodiment can also be omitted, alternatively, it is also possible to add or change other structure.Such as, front
In the embodiment in face, it is illustrated that ceramic main body is the situation of quadrangle form but it also may with circle etc. its
Its shape is formed.
Above explanation is for exemplarily illustrating this utility model, as long as technology belonging to this utility model
The technical staff in field, then can be carried out in the range of without departing from internal characteristic of the present utility model
Various amendment, change and replace.Therefore, this utility model disclosed embodiment and accompanying drawing are not intended to
Specifically limit this utility model, but be adapted to assist in understanding of the present utility model, right of the present utility model
Scope this embodiment of not according to and accompanying drawing and limit.Protection domain of the present utility model should the power of basis
Profit claim is explained, all technological thoughts in equivalents therewith should be interpreted that and are contained in this practicality newly
The interest field of type.
Claims (15)
1. a ultraviolet LED, it is characterised in that described ultraviolet LED includes:
Substrate；
Semiconductor stacked structure body, is arranged on described substrate；And
First electrode and the second electrode, be arranged on described semiconductor stacked structure body,
Described semiconductor stacked structure body has 4 μm thickness to 10 μm,
Described substrate has 400 μm thickness to 500 μm.
Ultraviolet LED the most according to claim 1, it is characterised in that described substrate bag
The periphery including the side along described substrate is formed and mutual along the thickness direction of described substrate with the shape of band
The multiple matsurfaces separated.
Ultraviolet LED the most according to claim 2, it is characterised in that described substrate bag
Include at least 4 matsurfaces.
Ultraviolet LED the most according to claim 1, it is characterised in that described ultraviolet
Light emitting diode also includes: insulating barrier, covers described semiconductor stacked structure body, and has and make described
Multiple peristomes that one electrode and described second electrode expose.
Ultraviolet LED the most according to claim 4, it is characterised in that described ultraviolet
Light emitting diode also includes the multiple projections being arranged on described first electrode and described second electrode.
Ultraviolet LED the most according to claim 1, it is characterised in that described quasiconductor
Laminate structure includes:
N-type semiconductor layer；And
Table top, is positioned in described n-type semiconductor layer, including active layer and be positioned at the p on described active layer
Type semiconductor layer,
Described first electrode is arranged in described n-type semiconductor layer,
Described second electrode is arranged on described table top.
Ultraviolet LED the most according to claim 6, it is characterised in that
Described first electrode includes n contact layer and n upper layer,
Described second electrode includes P-contact layer and p upper layer,
Described n upper layer and described p upper layer are the layer of same substance.
Ultraviolet LED the most according to claim 7, it is characterised in that
Described n contact layer is formed by Ti/Al, and described P-contact layer is formed by Pt or ITO,
Described n upper layer and described p upper layer are formed by Ni/Au.
Ultraviolet LED the most according to claim 6, it is characterised in that
Described n-type semiconductor layer includes N-shaped AlGaN layer and is arranged at described substrate and described N-shaped
AlN layer between AlGaN layer,
Multiple AlGaN potential barrier that described active layer includes alternateing stacking and multiple AlGaN well layer,
Described p-type semiconductor layer includes AlGaN electronic barrier layer and p-type GaN layer.
Ultraviolet LED the most according to claim 9, it is characterised in that described activity
Layer is for discharging the ultraviolet of below 300nm.
11. 1 kinds of ultraviolet ray emitting elements, it is characterised in that described ultraviolet ray emitting element includes right
Require the ultraviolet LED described in any one in 1 to 10.
12. ultraviolet ray emitting elements according to claim 11, it is characterised in that described ultraviolet
Light-emitting component also includes base station,
Described ultraviolet LED passes through multiple projections face-down bonding on described base station.
13. ultraviolet ray emitting elements according to claim 12, it is characterised in that described ultraviolet
Light-emitting component also includes forming the ceramic main body of sidewall and being arranged at the heat radiation of bottom of described ceramic main body
With metallic plate,
Described base station is arranged on described heat transmission metallic plate.
14. ultraviolet ray emitting elements according to claim 13, it is characterised in that described ultraviolet
Light-emitting component is additionally included in multiple outside leads of the outer wall exposure of described ceramic main body and from described pottery
The inside of main body is connected in multiple inner leads of the plurality of outside lead.
15. ultraviolet ray emitting elements according to claim 13, it is characterised in that described ultraviolet
Light-emitting component also includes glass plate or the quartz plate covering the upper entrance of described ceramic main body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620365810.1U CN205645857U (en) | 2016-04-27 | 2016-04-27 | Ultraviolet ray emitting diode and have its ultraviolet light emitting component |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620365810.1U CN205645857U (en) | 2016-04-27 | 2016-04-27 | Ultraviolet ray emitting diode and have its ultraviolet light emitting component |
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|---|---|
| CN205645857U true CN205645857U (en) | 2016-10-12 |
Family
ID=57061324
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108269900A (en) * | 2016-12-28 | 2018-07-10 | 日亚化学工业株式会社 | Light-emitting device and its manufacturing method |
| CN111029457A (en) * | 2019-12-31 | 2020-04-17 | 合肥彩虹蓝光科技有限公司 | Packaging structure and packaging method of deep ultraviolet light emitting diode |
| CN111129249A (en) * | 2019-12-31 | 2020-05-08 | 合肥彩虹蓝光科技有限公司 | Deep ultraviolet light-emitting diode and preparation method thereof |
-
2016
- 2016-04-27 CN CN201620365810.1U patent/CN205645857U/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108269900A (en) * | 2016-12-28 | 2018-07-10 | 日亚化学工业株式会社 | Light-emitting device and its manufacturing method |
| CN108269900B (en) * | 2016-12-28 | 2022-06-03 | 日亚化学工业株式会社 | Light emitting device and method for manufacturing the same |
| CN111029457A (en) * | 2019-12-31 | 2020-04-17 | 合肥彩虹蓝光科技有限公司 | Packaging structure and packaging method of deep ultraviolet light emitting diode |
| CN111129249A (en) * | 2019-12-31 | 2020-05-08 | 合肥彩虹蓝光科技有限公司 | Deep ultraviolet light-emitting diode and preparation method thereof |
| CN111129249B (en) * | 2019-12-31 | 2021-08-10 | 宁波安芯美半导体有限公司 | Deep ultraviolet light-emitting diode and preparation method thereof |
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