TW419763B - Wire bonding method - Google Patents
Wire bonding method Download PDFInfo
- Publication number
- TW419763B TW419763B TW088113510A TW88113510A TW419763B TW 419763 B TW419763 B TW 419763B TW 088113510 A TW088113510 A TW 088113510A TW 88113510 A TW88113510 A TW 88113510A TW 419763 B TW419763 B TW 419763B
- Authority
- TW
- Taiwan
- Prior art keywords
- capillary
- point
- lead
- bonding point
- bonding
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 11
- 238000010586 diagram Methods 0.000 description 6
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 6
- 230000002441 reversible effect Effects 0.000 description 3
- 230000002079 cooperative effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010985 leather Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
- B23K20/004—Wire welding
- B23K20/005—Capillary welding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48095—Kinked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8512—Aligning
- H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
- H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
- H01L2224/8518—Translational movements
- H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/85399—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Wire Bonding (AREA)
Description
419 763 經濟部智慧財產局員工消費合作社印裂
五、發明說明(f ) [技術領域] 本發明,係關於將插通於毛細管之引線,藉毛細管連 接於第1結合點及第2結合點間之引線結合方法,特別是 關於引線弧形之形成方法。 + [習知技術] 以往,作爲揭示於例如日本特公平5-60657號公報之 台形弧形改良物,例如特開平10-189641號公報中所示者 較爲人知。此弧形形狀,係在台形弧形之弧形頂部直線部 份下方形成凹部,而大致呈Μ狀之物。以下,稱此弧形形 狀爲Μ形弧形。 以下,藉第4圖〜第6圖說明Μ形弧形。如第4圖所 示,以引線3連接固定於引腳框架1之半導體晶片2的墊 2a上面(第結合點)與引腳框架1之引腳U上面(第2結合 點)的引線弧形形狀,係由頸高度部31、台形部長度部份 32及傾部33所組成,在台形部長度部份32之兩端形成有 彎痕3a、3b,在台形部長度部份32形成有彎痕3c而台形 部長度部份32係形成爲向下方凹陷之形狀。此種Μ形弧 形形狀,係以第5圖所示之毛細管軌跡及第6圖所示之步 驟形成。 如第6圖(a)所示的,夾住引線3之夾具(未圖不)呈打 開狀態,毛細管4下降將形成於引線前端之球結合於第1 結合點A後,毛細管4上昇至B點並拉出引線3。其次如 第6圖(b)所示的,使毛細管4水平移動至與第2結合點G -I I . I . I I I I r ^ ---' ---" I —-*·--11· — I ! - I 1 I * "5^* (請先閱璜背面之注意事項再填寫本頁) 本纸張尺度適用中囚國家桴準(CNS)A.l覘格(210 X 297公t ) 經濟部智慧时產局員工消費合作社印製 4ι^763 λ: _ B7 五、發明說明(_> :) 相反方向之C點以進行反向(Reverse)動作。藉此,與習知 方式相同的,引線3之部分產生彎痕3 a。再者,自此A點 到C點之步驟所拉出之引線3,成爲如第5圖所示之頸高 度部31。 其次如第6圖(c)所示’毛細管4上昇至D1點而拉出 引線3。之後,如第6圖(d)所示,毛細管4移動至第2結 合點G方向之D2點。然後,如第6圖(e)所示,毛細管4 上昇至D點而拉出引線3。藉此第6圖(d)及(e)之步驟,在 引線3形成彎痕3c。又,自DI點到D2點之動作中拉出之 線長(自彎痕3a到彎痕3c之長度)成爲第1橫引線部34。 其次,如第6圖(f)所示,毛細管4向第2結合點G之 相反方向移動,亦即進行第2次的反向動作水平移動至E 點°自此C點到E點之動作,在引線3形成彎痕3b。再者 ,此時所拉出之引線3成爲第4圖之第2橫引線部35 =其 次,如第6圖(g)所示,毛細管4上昇至F1點僅拉出第4 圖中/傾斜部3 3份星之引線3 3 ,乙後,夾具(未圖示)關閉 。當夾具關閉後,毛細管4即使移動亦不進行拉出引線3 之動作。其次,如第6圖(h)所示,毛細管4水平移動至第 2結合點G方向之F點。其次如第6圖(h)〜⑴所示般,毛 細管4在進行圓弧運動或圓弧運動後下降至第2結合點G ,將引線3結合至第2結合點G。 [發明欲解決之課題] 上述習知技術,如第5圖及第6圖所示般,由於毛細 i —--I I I I I ί I - I I ------^ * J I I I— I *--· (請先閱讀背面之;i意事項再填寫本頁) 本紙張尺度適用巾國國家標卓(CNS)Al规格mo X 297公坌) A7 419763 五、發明說明() 管4之軌跡複雜且移動量較大’因此結合時所需時間較多 。再者,由於係以如第6圖(b)所示之反向動作自根部(第1 結合點A)折彎引線3,以第6圖(g)〜⑴之步驟拉伸引線3 而將引線3之根部(第1結合點A)恢復原狀,因此如第7 圖所示,在引線3之頸部產生裂縫或斷線等之損傷。 又,由於Μ形弧形之引線弧形形狀整體之彈性較大, 因此在第6圖(g)〜⑴之步驟中彎痕3a、3b、3c被拉直, 而有自第1結合點A到彎痕3a之頸部高度部3 1無法完全 回到原來之垂直情形。進而產生引線弧形形狀及彎痕3a之 高度Ha不均的情形。由於此高度Ha之變動、結合於第2 結合點G時因引線3之塑性變形所產生之斥力,以及引線 結合後之後製程之模製的流動1而有彎痕3b之高度Hb較 高度Ha爲高之情形。因此,彎痕3b之高度Hb成爲在 2〇0〜4〇0μπι左右之範圍,使引練弧形整體之高度安定的彤 成在較低之200μΐτ!以下是非常困難的。 本發明之第1課題,即係提供一能謀求毛細管之軌跡 單純且移動量較小,縮短結合時間,同時不致對引線之頸 部造成任何損傷之引線結合方法。 本發明之第2課題’係提供一能使引線弧形整體之高 度安定的形成200μπι以下之低引線弧形之引線結合方法。 [解決課題之方法] 解決上述課題之本發明之方法,係使用毛細管將插通 於毛細管之引線連接於第1結合點與第2結合點間之引線 -- - - ------ —---· —-----—訂 <請先閱If背面之;1音?事項再填寫本I) 經濟部智慧財產局員工消費合作社印-t'iii 本纸張尺度滷用中a國家標準(CNS)Al規格(2]ϋ X 37公髮) 經濟邨智慧时產局員工消費合作社印製 '419763 A7 ^______B7_____ 五、發明說明(中) 結合方法,其特徵在於:將自毛細管前端延拉出之引線前 端形成之球結合於第1結合點後使毛細管上昇,其次使毛 細管移動至第2結合點方向之斜上方位置,接著使毛細管 移動至與第2結合點相反方向之斜上方位置,其次再使毛 細管移動至第2結合點方向之斜上方位置,之後使毛細管 下降將引線結合於第2結合點。 [發明之實施形態] 以第1圖及第2圖說明本發明之一實施形態。首先, 進行與習知相同之第1圖(a)之步驟。亦即,如第1圖(a)所 示,夾住引線3之夾具(未圖示)係呈打開狀態,在毛細管4 下降將形成於引線前端之球結合於第1結合點後,毛細管 4邊拉出引線3邊上昇至B點。 其次,進行本實施形態之特徵的步驟。如第1圖(b)所 示,毛細管4自B點移動至第2結合點G方向斜上方之C 點(第2圖B點到C點之步驟)。當然,此移動量及上昇角 度係不會造成頸部30任何損傷之量據此,於引線3部份 形成彎痕3a。又,自A點到B點之步驟中所拉出之引線3 ,成爲如第1圖(e)所示之頸高度部31。 其次,如第1圖(c)所示般,毛細管4移動至與第2結 合點G相反方向斜上方之D點(第2圖C點到D點之步驟) 。據此第1圖(b)到(c)之步驟,於引線3部份形成彎痕3c 。自此B點到C點之動作中所拉出之引線3(彎痕3a到彎 痕3b之長度),成爲如第1圖(e)中所示之第I橫引線部34 I II--------------- I 丨—訂 — — 111 丨丨 (請先閱讀背面之注意事項再填冩本頁》 本纸張尺度通用中0國家標革(CNSM1規格(210 X四;' 公复) B7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明(弓) 。其次,如第1圖(d)所示,毛細管4移動至第2結合點G 方向斜上方之E點(第2圖D點到E點之步驟)。據此第1 圖(c)到(d)之步驟,於引線3部份形成彎痕3b。又,自此c 點到D點之動作中所拉出之長度(彎痕3c到彎痕3b之長度 ),成爲如第1圖(e)中所示之第2橫引線部35。又’以第1 圖(d)之步驟所拉出之引線3的長度成爲如第1圖(e)中所示 之傾斜部33。 之後,夾具(未圖示)關閉。在夾具關閉後,即使毛細 管4移動亦不進行拉出引線3之動作。其次,如第1圖(e) 所示,毛細管4在進行圓弧運動或圓弧運動後自E點下降 至第2結合點G,結合引線3(第2圖E點自G點之步驟) 。又,自E點到第2結合點G之動作,由於與本發明之要 旨無直接關係,因此即使進行與揭示於前述習知例相同之 動作 '例如日本特公平5-60657號公報、特開平10-189641 號公報之動作,及其他種種動作皆可。 再者,本實施形態中,如第2圖所示般,係圖示毛細 管4以直線進行自B點到C點、C點到D點、D點到E點 之軌跡》但,隨引線3之直徑、硬度、彈性及毛細管4之 形狀、形態等之不同,而使拉出引線3有困難時,不一定 非得是直線’如第3圖所示般,例如亦可使之爲通過B點 、C 點、D 點、E 點之.曲線(spline (;1^65)等 a 如第5圖及第6圖之習知例所示般,進行了如A ' B 、C 、 Dl ' D2 ' D 、 E 、 FI 、 F 、 G等非常多的步驟’且毛 細管4之移動量亦多。相對於此,本實施形態,則如第1 本紙張尺度適用中舀國家標_:jL (C'NS)A.l規格(210 X 297公Μ ) 裝--------訂---------線 (請先間讀背面之注意事項再填寫本頁) 經 濟 智 財 產 局 •消 費 合 A7 B7 五、發明說明(L ) 圖及第2圖所示’由於僅有A、B、C、D ' E、G等較少的 步驟,且毛細管4之移動量亦較少’因此能大幅縮短結合 時間。再者,本實施形態’如第1圖(a)到(b)所示般’在結 合於第1結合點A後上昇至B點,之後上昇至第2結合點 G方向之斜上方的C點,由於在彎出引線3之頸部30後 不進行恢復原狀之動作,因此不致對引線3之頸部30造成 損傷。 再者,由於係藉前述第1圖O)Pj(b)之動作形成彎痕 3a以形成頸高度部31,因此彎痕3a之高度Ha較爲安定, 且引線弧形形狀亦較爲安定。進而得以使引線弧形全體之 高度Ha或Hb中較高之一方形成爲1〇〇〜200μηι之較低的 高度。 [發明之效果] 根據本發明,由於係在將自毛細管前端延伸之引線前 端形成之球結合於第1結合點後使毛細管上昇,其次使毛 細管移動至第2結合點方向之斜上方位置,接著使毛細管 移動至第2結合點相反方向之斜上方位置,其次再使毛細 管移動至第2結合點方向之斜上方位置,接著使毛細管下 降將引線結合於第2結合點’因此能謀求毛細管之軌跡單 純、且毛細管移動量較少、結合時間較短,亦不致造成引 線頸部損傷。苒者,能形成引線弧形整體高度安定、 2〇〇μιτι以下之低引線弧形。 -------------裝--------訂---------線 (琦先閱讀背面之注意事項再填寫本頁) 本纸張又度適用中®囤家棵丰(CNS)A,!規格(2it) X 公呈) 經濟部智慧財產局員工消費合作社印5Λ 419763 ______B7 五、發明說明(1 ) [圖式之簡單說明] 第1圖係顯不本發明一實施形態’(a)〜(e)係顯示各步 驟中毛細管移動時之引線形狀。 第2圖係顯本發明一實施形態之毛細管的軌跡圖。 第3圖係顯示本發明另一實施形態之毛細管的軌跡圖 〇 第4圖係具有Μ形弧形之半導體裝置的說明圖。 第5圖係顯示習知毛細管之軌跡及引線連接狀態的說 明圖。 第6圖(a)〜⑴係顯示習知各步驟中毛細管之移動所形 成之引線形狀的說明圖。 第7圖係用以說明習知例之問題的說明圖。 [符號說明] -------------裝·-------訂---------線 c請先閱讀背面之¾¾事項再填茑本頁> A 第丨結合點 B 第2結合點 J 引線 3a、 3b ' 3c 彎痕 4 毛細管 30 頸部 31 頸高度部 32 台形部長度部份 -Ί ’傾斜部 34 第1橫引線部 35 第2橫引線部 本纸張尺度適用中®國家標,(MCNS)Al規格(2】〇 297 公 g )
Claims (1)
- 419763 B8 C8 D8 申請專利範圍 1 · 一種引線結合方法,係使用毛細管將插通於毛細管 之引線連接於第1結合點與第2結合點間,其特徵在於: 將自毛細管前端延伸之引線前端形成之球結合於第1結合 點後使毛細管上昇,其次使毛細管移動至第2結合點方向 之斜上方位置,接著使毛細管移動至第2結合點相反方向 之斜上方位置,其次再使毛細管移動至第2結合點方向之 斜上方位置,接著使毛細管下降將引線結合於第2結合點 -------------裝---------訂-----------線 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作杜印製 本纸張尺度適用中國國家標準(CNS)/\1規格(21ϋ X 297公坌)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10286203A JP2000114304A (ja) | 1998-10-08 | 1998-10-08 | ワイヤボンディング方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW419763B true TW419763B (en) | 2001-01-21 |
Family
ID=17701308
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW088113510A TW419763B (en) | 1998-10-08 | 1999-08-07 | Wire bonding method |
Country Status (4)
Country | Link |
---|---|
US (1) | US6112974A (zh) |
JP (1) | JP2000114304A (zh) |
KR (1) | KR100322191B1 (zh) |
TW (1) | TW419763B (zh) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3455092B2 (ja) * | 1997-10-27 | 2003-10-06 | 株式会社新川 | 半導体装置及びワイヤボンディング方法 |
JP3377748B2 (ja) * | 1998-06-25 | 2003-02-17 | 株式会社新川 | ワイヤボンディング方法 |
JP3522123B2 (ja) * | 1998-09-30 | 2004-04-26 | 株式会社新川 | ワイヤボンディング方法 |
US6391759B1 (en) * | 2000-04-27 | 2002-05-21 | Advanced Semiconductor Engineering, Inc. | Bonding method which prevents wire sweep and the wire structure thereof |
US6457235B1 (en) * | 2000-06-09 | 2002-10-01 | Advanced Semiconductor Engineering, Inc. | Method of wire-bonding circuit chip to bonding pad |
JP4106039B2 (ja) * | 2003-06-27 | 2008-06-25 | 株式会社新川 | ワイヤボンディング方法 |
US7494042B2 (en) * | 2003-10-02 | 2009-02-24 | Asm Technology Singapore Pte. Ltd. | Method of forming low wire loops and wire loops formed using the method |
US7347352B2 (en) * | 2003-11-26 | 2008-03-25 | Kulicke And Soffa Industries, Inc. | Low loop height ball bonding method and apparatus |
US7314157B2 (en) * | 2004-08-13 | 2008-01-01 | Asm Technology Singapore Pte Ltd | Wire bond with improved shear strength |
JP4137061B2 (ja) * | 2005-01-11 | 2008-08-20 | 株式会社カイジョー | ワイヤループ形状、そのワイヤループ形状を備えた半導体装置、ワイヤボンディング方法 |
DE102006011352A1 (de) * | 2005-03-23 | 2006-10-05 | Unaxis International Trading Ltd. | Verfahren zur Herstellung einer Drahtverbindung |
US7780064B2 (en) * | 2006-06-02 | 2010-08-24 | Asm Technology Singapore Pte Ltd | Wire bonding method for forming low-loop profiles |
CN101652844B (zh) * | 2007-04-02 | 2015-08-26 | 库利克和索夫工业公司 | 在引线环中形成弯曲的方法 |
JP4361593B1 (ja) | 2008-10-21 | 2009-11-11 | 株式会社新川 | ワイヤボンディング方法 |
JP4344002B1 (ja) | 2008-10-27 | 2009-10-14 | 株式会社新川 | ワイヤボンディング方法 |
JP4558832B2 (ja) * | 2009-06-05 | 2010-10-06 | 株式会社新川 | 半導体装置 |
JP4616924B2 (ja) * | 2009-10-30 | 2011-01-19 | 株式会社新川 | 半導体装置 |
MY152355A (en) * | 2011-04-11 | 2014-09-15 | Carsem M Sdn Bhd | Short and low loop wire bonding |
MY181180A (en) * | 2011-09-09 | 2020-12-21 | Carsem M Sdn Bhd | Low loop wire bonding |
CN102437111B (zh) * | 2011-12-01 | 2014-03-26 | 中南大学 | 利用线夹制造折点的快速引线成弧方法及装置 |
DE102016224631B4 (de) * | 2016-12-09 | 2020-06-04 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Elektrisch leitende Verbindung zwischen mindestens zwei elektrischen Komponenten an einem mit elektronischen und/oder elektrischen Bauelementen bestücktem Träger, die mit einem Bonddraht ausgebildet ist |
KR20220090289A (ko) * | 2020-12-22 | 2022-06-29 | 삼성전자주식회사 | 반도체 패키지 |
WO2022259328A1 (ja) * | 2021-06-07 | 2022-12-15 | 株式会社新川 | ワイヤボンディング装置及びワイヤボンディング方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4068371A (en) * | 1976-07-12 | 1978-01-17 | Miller Charles F | Method for completing wire bonds |
JPS6342135A (ja) * | 1986-08-08 | 1988-02-23 | Shinkawa Ltd | ワイヤボンデイング方法 |
JPH0713988B2 (ja) * | 1990-02-13 | 1995-02-15 | 株式会社東芝 | ワイヤボンディング方法 |
JP3049515B2 (ja) * | 1991-06-19 | 2000-06-05 | 株式会社新川 | ワイヤボンデイング方法 |
JPH0560657A (ja) * | 1991-09-02 | 1993-03-12 | Nippon Seiko Kk | 複列玉軸受の外輪軌道のピツチを測定する装置 |
US5205463A (en) * | 1992-06-05 | 1993-04-27 | Kulicke And Soffa Investments, Inc. | Method of making constant clearance flat link fine wire interconnections |
US5884398A (en) * | 1993-11-16 | 1999-03-23 | Form Factor, Inc. | Mounting spring elements on semiconductor devices |
NL9400766A (nl) * | 1994-05-09 | 1995-12-01 | Euratec Bv | Werkwijze voor het inkapselen van een geintegreerde halfgeleiderschakeling. |
JP3189115B2 (ja) * | 1996-12-27 | 2001-07-16 | 株式会社新川 | 半導体装置及びワイヤボンディング方法 |
JP3172472B2 (ja) * | 1997-08-29 | 2001-06-04 | 三洋電機株式会社 | 半導体装置 |
-
1998
- 1998-10-08 JP JP10286203A patent/JP2000114304A/ja not_active Withdrawn
-
1999
- 1999-08-07 TW TW088113510A patent/TW419763B/zh not_active IP Right Cessation
- 1999-10-07 KR KR1019990043177A patent/KR100322191B1/ko not_active IP Right Cessation
- 1999-10-08 US US09/415,452 patent/US6112974A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2000114304A (ja) | 2000-04-21 |
KR100322191B1 (ko) | 2002-02-06 |
KR20000028889A (ko) | 2000-05-25 |
US6112974A (en) | 2000-09-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW419763B (en) | Wire bonding method | |
KR100725307B1 (ko) | 와이어 루프, 그것을 갖는 반도체 장치 및 와이어 본딩방법 | |
JP5830204B2 (ja) | 低プロファイルのワイヤループを形成する方法およびその装置 | |
JP4298665B2 (ja) | ワイヤボンディング方法 | |
JP2004172477A (ja) | ワイヤループ形状、そのワイヤループ形状を備えた半導体装置、ワイヤボンディング方法及び半導体製造装置 | |
JP3189115B2 (ja) | 半導体装置及びワイヤボンディング方法 | |
JP3455092B2 (ja) | 半導体装置及びワイヤボンディング方法 | |
JP2007512714A (ja) | 低いループ高さのボールボンディング方法およびその装置 | |
TW463278B (en) | Wire bonding method | |
TW407327B (en) | Wire bonding method | |
TW510002B (en) | Wire bonding method | |
TW413876B (en) | Wire bonding method | |
KR20110137767A (ko) | 도전성 범프, 와이어 루프 및 그 형성 방법 | |
TWI473182B (zh) | 在線弧中形成彎曲的方法 | |
KR19980079523A (ko) | 와이어 본딩방법 | |
JP4369401B2 (ja) | ワイヤボンディング方法 | |
KR20060102495A (ko) | 와이어 접속부 형성 방법 | |
JP3522123B2 (ja) | ワイヤボンディング方法 | |
JP2007214337A (ja) | ワイヤボンディング方法および半導体装置 | |
JP2019062095A (ja) | 半導体装置及びその製造方法 | |
CN207035651U (zh) | 一种冰箱后背组件及冰箱 | |
JP2005093806A (ja) | 半導体装置およびその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GD4A | Issue of patent certificate for granted invention patent | ||
MM4A | Annulment or lapse of patent due to non-payment of fees |