TW419763B - Wire bonding method - Google Patents

Wire bonding method Download PDF

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Publication number
TW419763B
TW419763B TW088113510A TW88113510A TW419763B TW 419763 B TW419763 B TW 419763B TW 088113510 A TW088113510 A TW 088113510A TW 88113510 A TW88113510 A TW 88113510A TW 419763 B TW419763 B TW 419763B
Authority
TW
Taiwan
Prior art keywords
capillary
point
lead
bonding point
bonding
Prior art date
Application number
TW088113510A
Other languages
English (en)
Inventor
Shinichi Nishiura
Nobuo Takeuchi
Original Assignee
Shinkawa Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinkawa Kk filed Critical Shinkawa Kk
Application granted granted Critical
Publication of TW419763B publication Critical patent/TW419763B/zh

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
    • B23K20/004Wire welding
    • B23K20/005Capillary welding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
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    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/05599Material
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
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    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48095Kinked
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/783Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301Capillary
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512Aligning
    • H01L2224/85148Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518Translational movements
    • H01L2224/85181Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
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    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399Material
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)

Description

419 763 經濟部智慧財產局員工消費合作社印裂
五、發明說明(f ) [技術領域] 本發明,係關於將插通於毛細管之引線,藉毛細管連 接於第1結合點及第2結合點間之引線結合方法,特別是 關於引線弧形之形成方法。 + [習知技術] 以往,作爲揭示於例如日本特公平5-60657號公報之 台形弧形改良物,例如特開平10-189641號公報中所示者 較爲人知。此弧形形狀,係在台形弧形之弧形頂部直線部 份下方形成凹部,而大致呈Μ狀之物。以下,稱此弧形形 狀爲Μ形弧形。 以下,藉第4圖〜第6圖說明Μ形弧形。如第4圖所 示,以引線3連接固定於引腳框架1之半導體晶片2的墊 2a上面(第結合點)與引腳框架1之引腳U上面(第2結合 點)的引線弧形形狀,係由頸高度部31、台形部長度部份 32及傾部33所組成,在台形部長度部份32之兩端形成有 彎痕3a、3b,在台形部長度部份32形成有彎痕3c而台形 部長度部份32係形成爲向下方凹陷之形狀。此種Μ形弧 形形狀,係以第5圖所示之毛細管軌跡及第6圖所示之步 驟形成。 如第6圖(a)所示的,夾住引線3之夾具(未圖不)呈打 開狀態,毛細管4下降將形成於引線前端之球結合於第1 結合點A後,毛細管4上昇至B點並拉出引線3。其次如 第6圖(b)所示的,使毛細管4水平移動至與第2結合點G -I I . I . I I I I r ^ ---' ---" I —-*·--11· — I ! - I 1 I * "5^* (請先閱璜背面之注意事項再填寫本頁) 本纸張尺度適用中囚國家桴準(CNS)A.l覘格(210 X 297公t ) 經濟部智慧时產局員工消費合作社印製 4ι^763 λ: _ B7 五、發明說明(_> :) 相反方向之C點以進行反向(Reverse)動作。藉此,與習知 方式相同的,引線3之部分產生彎痕3 a。再者,自此A點 到C點之步驟所拉出之引線3,成爲如第5圖所示之頸高 度部31。 其次如第6圖(c)所示’毛細管4上昇至D1點而拉出 引線3。之後,如第6圖(d)所示,毛細管4移動至第2結 合點G方向之D2點。然後,如第6圖(e)所示,毛細管4 上昇至D點而拉出引線3。藉此第6圖(d)及(e)之步驟,在 引線3形成彎痕3c。又,自DI點到D2點之動作中拉出之 線長(自彎痕3a到彎痕3c之長度)成爲第1橫引線部34。 其次,如第6圖(f)所示,毛細管4向第2結合點G之 相反方向移動,亦即進行第2次的反向動作水平移動至E 點°自此C點到E點之動作,在引線3形成彎痕3b。再者 ,此時所拉出之引線3成爲第4圖之第2橫引線部35 =其 次,如第6圖(g)所示,毛細管4上昇至F1點僅拉出第4 圖中/傾斜部3 3份星之引線3 3 ,乙後,夾具(未圖示)關閉 。當夾具關閉後,毛細管4即使移動亦不進行拉出引線3 之動作。其次,如第6圖(h)所示,毛細管4水平移動至第 2結合點G方向之F點。其次如第6圖(h)〜⑴所示般,毛 細管4在進行圓弧運動或圓弧運動後下降至第2結合點G ,將引線3結合至第2結合點G。 [發明欲解決之課題] 上述習知技術,如第5圖及第6圖所示般,由於毛細 i —--I I I I I ί I - I I ------^ * J I I I— I *--· (請先閱讀背面之;i意事項再填寫本頁) 本紙張尺度適用巾國國家標卓(CNS)Al规格mo X 297公坌) A7 419763 五、發明說明() 管4之軌跡複雜且移動量較大’因此結合時所需時間較多 。再者,由於係以如第6圖(b)所示之反向動作自根部(第1 結合點A)折彎引線3,以第6圖(g)〜⑴之步驟拉伸引線3 而將引線3之根部(第1結合點A)恢復原狀,因此如第7 圖所示,在引線3之頸部產生裂縫或斷線等之損傷。 又,由於Μ形弧形之引線弧形形狀整體之彈性較大, 因此在第6圖(g)〜⑴之步驟中彎痕3a、3b、3c被拉直, 而有自第1結合點A到彎痕3a之頸部高度部3 1無法完全 回到原來之垂直情形。進而產生引線弧形形狀及彎痕3a之 高度Ha不均的情形。由於此高度Ha之變動、結合於第2 結合點G時因引線3之塑性變形所產生之斥力,以及引線 結合後之後製程之模製的流動1而有彎痕3b之高度Hb較 高度Ha爲高之情形。因此,彎痕3b之高度Hb成爲在 2〇0〜4〇0μπι左右之範圍,使引練弧形整體之高度安定的彤 成在較低之200μΐτ!以下是非常困難的。 本發明之第1課題,即係提供一能謀求毛細管之軌跡 單純且移動量較小,縮短結合時間,同時不致對引線之頸 部造成任何損傷之引線結合方法。 本發明之第2課題’係提供一能使引線弧形整體之高 度安定的形成200μπι以下之低引線弧形之引線結合方法。 [解決課題之方法] 解決上述課題之本發明之方法,係使用毛細管將插通 於毛細管之引線連接於第1結合點與第2結合點間之引線 -- - - ------ —---· —-----—訂 <請先閱If背面之;1音?事項再填寫本I) 經濟部智慧財產局員工消費合作社印-t'iii 本纸張尺度滷用中a國家標準(CNS)Al規格(2]ϋ X 37公髮) 經濟邨智慧时產局員工消費合作社印製 '419763 A7 ^______B7_____ 五、發明說明(中) 結合方法,其特徵在於:將自毛細管前端延拉出之引線前 端形成之球結合於第1結合點後使毛細管上昇,其次使毛 細管移動至第2結合點方向之斜上方位置,接著使毛細管 移動至與第2結合點相反方向之斜上方位置,其次再使毛 細管移動至第2結合點方向之斜上方位置,之後使毛細管 下降將引線結合於第2結合點。 [發明之實施形態] 以第1圖及第2圖說明本發明之一實施形態。首先, 進行與習知相同之第1圖(a)之步驟。亦即,如第1圖(a)所 示,夾住引線3之夾具(未圖示)係呈打開狀態,在毛細管4 下降將形成於引線前端之球結合於第1結合點後,毛細管 4邊拉出引線3邊上昇至B點。 其次,進行本實施形態之特徵的步驟。如第1圖(b)所 示,毛細管4自B點移動至第2結合點G方向斜上方之C 點(第2圖B點到C點之步驟)。當然,此移動量及上昇角 度係不會造成頸部30任何損傷之量據此,於引線3部份 形成彎痕3a。又,自A點到B點之步驟中所拉出之引線3 ,成爲如第1圖(e)所示之頸高度部31。 其次,如第1圖(c)所示般,毛細管4移動至與第2結 合點G相反方向斜上方之D點(第2圖C點到D點之步驟) 。據此第1圖(b)到(c)之步驟,於引線3部份形成彎痕3c 。自此B點到C點之動作中所拉出之引線3(彎痕3a到彎 痕3b之長度),成爲如第1圖(e)中所示之第I橫引線部34 I II--------------- I 丨—訂 — — 111 丨丨 (請先閱讀背面之注意事項再填冩本頁》 本纸張尺度通用中0國家標革(CNSM1規格(210 X四;' 公复) B7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明(弓) 。其次,如第1圖(d)所示,毛細管4移動至第2結合點G 方向斜上方之E點(第2圖D點到E點之步驟)。據此第1 圖(c)到(d)之步驟,於引線3部份形成彎痕3b。又,自此c 點到D點之動作中所拉出之長度(彎痕3c到彎痕3b之長度 ),成爲如第1圖(e)中所示之第2橫引線部35。又’以第1 圖(d)之步驟所拉出之引線3的長度成爲如第1圖(e)中所示 之傾斜部33。 之後,夾具(未圖示)關閉。在夾具關閉後,即使毛細 管4移動亦不進行拉出引線3之動作。其次,如第1圖(e) 所示,毛細管4在進行圓弧運動或圓弧運動後自E點下降 至第2結合點G,結合引線3(第2圖E點自G點之步驟) 。又,自E點到第2結合點G之動作,由於與本發明之要 旨無直接關係,因此即使進行與揭示於前述習知例相同之 動作 '例如日本特公平5-60657號公報、特開平10-189641 號公報之動作,及其他種種動作皆可。 再者,本實施形態中,如第2圖所示般,係圖示毛細 管4以直線進行自B點到C點、C點到D點、D點到E點 之軌跡》但,隨引線3之直徑、硬度、彈性及毛細管4之 形狀、形態等之不同,而使拉出引線3有困難時,不一定 非得是直線’如第3圖所示般,例如亦可使之爲通過B點 、C 點、D 點、E 點之.曲線(spline (;1^65)等 a 如第5圖及第6圖之習知例所示般,進行了如A ' B 、C 、 Dl ' D2 ' D 、 E 、 FI 、 F 、 G等非常多的步驟’且毛 細管4之移動量亦多。相對於此,本實施形態,則如第1 本紙張尺度適用中舀國家標_:jL (C'NS)A.l規格(210 X 297公Μ ) 裝--------訂---------線 (請先間讀背面之注意事項再填寫本頁) 經 濟 智 財 產 局 •消 費 合 A7 B7 五、發明說明(L ) 圖及第2圖所示’由於僅有A、B、C、D ' E、G等較少的 步驟,且毛細管4之移動量亦較少’因此能大幅縮短結合 時間。再者,本實施形態’如第1圖(a)到(b)所示般’在結 合於第1結合點A後上昇至B點,之後上昇至第2結合點 G方向之斜上方的C點,由於在彎出引線3之頸部30後 不進行恢復原狀之動作,因此不致對引線3之頸部30造成 損傷。 再者,由於係藉前述第1圖O)Pj(b)之動作形成彎痕 3a以形成頸高度部31,因此彎痕3a之高度Ha較爲安定, 且引線弧形形狀亦較爲安定。進而得以使引線弧形全體之 高度Ha或Hb中較高之一方形成爲1〇〇〜200μηι之較低的 高度。 [發明之效果] 根據本發明,由於係在將自毛細管前端延伸之引線前 端形成之球結合於第1結合點後使毛細管上昇,其次使毛 細管移動至第2結合點方向之斜上方位置,接著使毛細管 移動至第2結合點相反方向之斜上方位置,其次再使毛細 管移動至第2結合點方向之斜上方位置,接著使毛細管下 降將引線結合於第2結合點’因此能謀求毛細管之軌跡單 純、且毛細管移動量較少、結合時間較短,亦不致造成引 線頸部損傷。苒者,能形成引線弧形整體高度安定、 2〇〇μιτι以下之低引線弧形。 -------------裝--------訂---------線 (琦先閱讀背面之注意事項再填寫本頁) 本纸張又度適用中®囤家棵丰(CNS)A,!規格(2it) X 公呈) 經濟部智慧財產局員工消費合作社印5Λ 419763 ______B7 五、發明說明(1 ) [圖式之簡單說明] 第1圖係顯不本發明一實施形態’(a)〜(e)係顯示各步 驟中毛細管移動時之引線形狀。 第2圖係顯本發明一實施形態之毛細管的軌跡圖。 第3圖係顯示本發明另一實施形態之毛細管的軌跡圖 〇 第4圖係具有Μ形弧形之半導體裝置的說明圖。 第5圖係顯示習知毛細管之軌跡及引線連接狀態的說 明圖。 第6圖(a)〜⑴係顯示習知各步驟中毛細管之移動所形 成之引線形狀的說明圖。 第7圖係用以說明習知例之問題的說明圖。 [符號說明] -------------裝·-------訂---------線 c請先閱讀背面之¾¾事項再填茑本頁> A 第丨結合點 B 第2結合點 J 引線 3a、 3b ' 3c 彎痕 4 毛細管 30 頸部 31 頸高度部 32 台形部長度部份 -Ί ’傾斜部 34 第1橫引線部 35 第2橫引線部 本纸張尺度適用中®國家標,(MCNS)Al規格(2】〇 297 公 g )

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  1. 419763 B8 C8 D8 申請專利範圍 1 · 一種引線結合方法,係使用毛細管將插通於毛細管 之引線連接於第1結合點與第2結合點間,其特徵在於: 將自毛細管前端延伸之引線前端形成之球結合於第1結合 點後使毛細管上昇,其次使毛細管移動至第2結合點方向 之斜上方位置,接著使毛細管移動至第2結合點相反方向 之斜上方位置,其次再使毛細管移動至第2結合點方向之 斜上方位置,接著使毛細管下降將引線結合於第2結合點 -------------裝---------訂-----------線 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作杜印製 本纸張尺度適用中國國家標準(CNS)/\1規格(21ϋ X 297公坌)
TW088113510A 1998-10-08 1999-08-07 Wire bonding method TW419763B (en)

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KR20000028889A (ko) 2000-05-25
US6112974A (en) 2000-09-05

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