TW419658B - Optical recording element with an interfacial layer between the recording layer and the reflecting layer - Google Patents

Optical recording element with an interfacial layer between the recording layer and the reflecting layer Download PDF

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Publication number
TW419658B
TW419658B TW088102548A TW88102548A TW419658B TW 419658 B TW419658 B TW 419658B TW 088102548 A TW088102548 A TW 088102548A TW 88102548 A TW88102548 A TW 88102548A TW 419658 B TW419658 B TW 419658B
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Taiwan
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layer
recording layer
substrate
thickness
interface layer
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TW088102548A
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English (en)
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Pranab Kumar Raychaudhuri
Fridrich Vazan
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Eastman Kodak Co
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/258—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/26—Apparatus or processes specially adapted for the manufacture of record carriers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302—Metals or metalloids
    • G11B2007/24312—Metals or metalloids group 14 elements (e.g. Si, Ge, Sn)
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302—Metals or metalloids
    • G11B2007/24316—Metals or metalloids group 16 elements (i.e. chalcogenides, Se, Te)
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24318—Non-metallic elements
    • G11B2007/2432—Oxygen
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24318—Non-metallic elements
    • G11B2007/24328—Carbon
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
    • G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
    • G11B2007/2571—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing group 14 elements except carbon (Si, Ge, Sn, Pb)
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
    • G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
    • G11B2007/25711—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing carbon
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
    • G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
    • G11B2007/25715—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing oxygen
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/913—Material designed to be responsive to temperature, light, moisture
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/146—Laser beam
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/21—Circular sheet or circular blank

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Thermal Transfer Or Thermal Recording In General (AREA)
  • Optical Record Carriers And Manufacture Thereof (AREA)
  • Physical Vapour Deposition (AREA)

Description

4 19658 I-----1---------------—______________________ _ j五、發明說明α) ' 本發明係關於光學儲存用之可錄式元件。 j 光碟（CD)自80年代早期問世以來被建立為數位光風二 ；之普及格式。數位多用途光碟也稱做數位影音光碟千屺錄； i (DVD)，今日成為多用途媒體，且相信最終將3取代⑶。 !容量為c D容量的7倍。容量的增加主要係透過使用較短波 |長雷射及較窄軌距達成。但因其與波長有極強力關係，故j 於780毫微求用於可錄式CD (CD_R)用途之染料概略無法延丨 伸至可錄式DVD(DVD-R)，其係於約6 3 5毫微米波長工作。
I 同樣讓與之US -A-5，585, 158已經揭示基於Ge-Te-OH-O ：之系統的光學記錄薄層適合做為CD-R光學記錄元件之記錄 |層。此等層之光學性質與波長之關係微弱，僅略為改變組1 j成及厚度，相信也可用做DVD-R光學記錄元件。 | ! 光學記錄元件係由光學記錄薄層製成，光學記錄薄廣包 丨含一或多層亞層各自含有該等成份，以及一層金製成之反 I射層’及一層保護頂塗層，如圖1所示。各層亞層之組成 |及厚度經選擇而可粗略對應Rmin反射率，及又具有藉加熱 I處理修改之光學記錄元件性質。如此製備的光學記錄元件i i據報告適用於CD-R’相信也可用於DVD-R用途。 ! j 因C D - R及D V D - R主要係針對消費者市場，故高度需要降 I低成本。當嘗試使用較廉價的金屬來替代金反射層時，發1 ：現銀可提供所需反射率且於室溫顯然穩定。於升高溫度接'1 i近9 5 °C老化時，光碟（透過基材測量）之反射率降低，而銀 1之反射率（透過透明保瘦頂塗層測量）保持不變。如此指示 !於記錄層/銀交界面之交互作用乃不安定的主要起因。
第5頁 ________________________________________________________AllBSs—— 五、發明說明（2) 因此本發明之一目的係提供利用廉價反射層之穩定光學 記錄元件可用做CD-R及DVD-R。 丨 此種目的可經由一種可錄式元件達成，該可錄式元件包 I含： (a) —基#，一光學記錄層沉積於該基材上’一光反射 1層沉積於該記錄層上，及一界面層具有厚度於3至30毫微 !米之範圍，且係插置於記錄層與反射層間，光學記錄層含 i有TeaGebCcHdOe此處a，b，c，d及e為原子百分比獲得 a + b + c + d + e = 100，及其中 10<a<40，10<b<60 ，5<c< I 35，10<d<35，eg〇 ;及界面層含有 GewCxHyOz 此處w，x， y及z為原子百分比獲得w + x + y + z = 100，及其中15<w<65， 5 < x < 35，15<y<40，z20 ；及 (b) 記錄元件之性質籍由於選用之溫度藉加熱處理一段 :選用改變而改良其穩定性及性能。 1 根據本發明生產之光學記錄元件具有改良的性能參數， |包括熱老化時之反射率穩定性提升。出乎意外地發現，於 丨本DVD-R結構中，銀提供之反射率比對照DVD-R光碟（不含 !界面層之金反射層）高1 0個百分點，故更易符合DVD-R之反
I 射率規格。 丨圖式之簡單說明 , 圖1為根據本發明之光學記錄元件之剖面示意代表圖； : 圖2為記錄元件之反射比相對於記錄層厚度作圖；及 1 圖3為作圖顯示本發明之記錄元件及金及銀對照光碟之 I反射率呈熱老化之函數。 4ί9658 I五、發明說明（3) 丨較佳具體例之詳細說明 丨 本發明之一大特點為界面層經選擇而不會對反射率造成丨
| I ；不良影響，且不會與記錄層及反射層起反應°因希望有透丨
I 1明界面層，故若干小量吸收不會對記錄元件之工作造成不 I 1良影響。記錄層厚度進一步選擇為元件反射率接近Rmin。 i I "接近Rai/—詞表示係於對應R„in厚度之±30 %範圍内》Rnin i 一詞由參考文獻為眾所周知。圖2顯示記錄元件之反射比 | ：呈記錄層厚度之函數之代表性作圖。圖2之記錄元件包括 丨一半透明記錄層沉積於聚破酸酯基材上及一金反射層沉積丨 ； ,1 丨於界面層上。圖2之反射比作圖係於7 8 0毫微米波長測定且| i |係透過基材測量。此圖之記錄層之光學性質及厚度單位可 I任意選擇。但曲線為此型記錄元件之代表性曲線。反射率 |始於其最大值，隨著厚度的增加，反射率降低至最小值， ;然後升高至另一最大值隨後再度降低，如此由於光學干涉i 效應產生無限個局部最小值及局部最大值。於最低記錄層 i
： I 丨厚度獲得之局部最小值為第一反射率最小值，後文稱做 丨 丨β„ιιη。供討論用之對應之厚度定名為°較佳光學記錄 |厚度選擇為接近τ„,ιη。參照圖2，Rmin為約66 %及Tmin為約58 | 厚度單位°當組成及/或測量波長改變時’ Rmin及Tnin將與圖I i 2所示者不同，但圖形特點保持類似。業界人士將認知Rmin 1可藉由選擇光學常數及/或調整影響沉積記錄層之光學性 i . ! 質參數而調整。 ： I j |光學記錄元件係使用金及銀反射層製造，有或無界面層 ；於相同記錄層上，記錄層厚度接近T m; n。發現G e - C - Η - 0界 419β58 ________ I"五、發明說明C4) I面薄層可做為有效障壁層°測定界面層之較佳厚度係於3 I至30毫微米之範圍。界面層係大致透明’其表示於感興趣i I之波長具有微不足道的雷射光吸收量。雖然含銀反射層而！ !不含界面層之光學記錄元件之反射率於熱老化時劣化’但 ； !具有界面層之記錄元件則未見劣化。相當出乎意外地發現 j ί 丨含有銀反射層及界面層之光學記錄元件於635毫微米之反 | !射率比對照碟（含金反射層及未含界面層）之反射率增高1 〇 個百分點。業界人士了解反射層可由銀，金，銅或鋁及其 I合金製成。 ί 光學記錄元件顯示於圖1。基材1 0上方有一記錄層1 2， | I 一界面層14及一反射層16及一保護頂塗層18。光學記錄層 12之厚度選擇為接近Tmin。保護頂塗層並非記錄功能層， !此後不再討論。
丨 記錄係藉由使用寫入雷射聚焦於記錄層丨2而標記記錄層 丨12。聚焦雷射束加熱記錄層12至大致高於室溫之溫度且誘 !發光學記錄元件之物理變化。可能的變化包括金屬成份於 丨該層聚結，或材料解離形成氣態物種，而其又造成光學記I ' i 錄元件以氣泡、空隙或針孔等形式變形。也可能誘發基質 ；材料之若干畸變。總而言之，此等變化之部份或全部的組| 丨合構成標記，然後該標記可藉聚焦之讀取雷射束回讀。 ' ' 至於光學記錄及回放過程以及光碟的構造細節說明可參丨 I ! | 考光學記錄，AllanB. Marchant(1990)。 | 基材 1
I ; 基材10可由經或未經表面處理劑光學透明樹脂製成。基
第8頁 419658 五、發明說明（5) !材為透明，照射記錄層12之光係透過基材10照射。圖1具 體例之較佳樹脂為聚碳酸酯及聚丙烯酸酯。基材1 〇包括雷 射定軌的導槽。 丨記錄層1 2 | 本發明使用濺散層，濺散層含有TeaGebCcHdOe此處a，b ’ ;c，d及e為原子百分比而a + b + c + d + e=100，及其中10<a< j 40 j 10 < b <60 5 5 < c < 3 5 1 10 < d <35，e2〇。較佳記錄 層12包括多層。圖中顯示兩層，將稱做亞層12a及12b。記 i錄層沉積方法為直流反射性濺散。也使用合金濺散方法’ 其中第一標靶含有Te及Ge二者。合金標靶可藉熔體澆鑄或 粉體冶金技術製造。記錄層1 2也可藉共同濺散沉積，其中| ；各標把係由單一元素組成°氣氛含有藏散氣體如A r或K r ’ I及反應性氣體如甲烷，乙炔及其它烴類°有用層也可使用 ί其它氣體如氫氣，二氧化瑞等製備。較佳具體例中，亞層 丨1 2 a係於低流速甲烷下沉積於基材1 〇上一段時間，隨後具 有與亞層1 2 a不同組成之亞層1 2 b係使用較高流速沉積於亞 層1 2 a上製成。換言之，記錄層1 2之毗鄰界面層1 4部份具 1有比記錄層12之鄰基材10部份更高的烴含量。較佳亞層 丨12b條以較高曱烷流速製成。組合層12之厚度接近Tmin。記丨 !錄層12也具有沿其厚度方向之組成分解，隨著沉積的持 1 !續，濺散氣體之烴含量漸進增高。此種情況下，記錄層12 . |沿其厚度方向漸進分級且含有TeaGebCeHdOe此處a，b，c，d 及e為原子百分比而a + b+ c + d+ e=100 ’及其中10<a<40， | 10 < b <60，5<c<35 1 1 0 < d < 3 5，e20。
第9頁 ，_______________________________Ί ί五、發明說明（6) ! 丨界面層14 : 丨 本發明使用界面層1 4含有G e., Cx Οζ此處w，X，y及ζ為原 | ' | ；子百分比而w + x + y+ z = 100 ’ 及其中 15<ν<65 ’5<x<35， | :15<y<40，z20。界面層14之沉積方法為來自Ge標靶之 ； j :直流反應性濺散。氣氛含有濺散氣體如A r或K r，及反應性 ί i 1氣體如甲烷，乙炔及其它烴類。有用的界面層1 4也可使用 !其它氣體如氫氣，二氧化碳等製備。較佳具體例中’界面 層U大致為透明，厚度於3至3 0毫微米之範圍。 1反射層1 6 | 反射層16係由任一種高度反射率金屬及合金製成。有用 ；層可經真空沉積或濺散製成。較佳反射層1 6為7 0毫微米 | 丨銀1但最常使用金。 丨 保護性頂塗層1 8 ： I 頂塗層1 8可由任一種穩定且對反射膚不具反應性之材料 丨製成。此等材料之例有紫外光可固化樹脂及黏著劑厚度為 丨數微米。 加熱處理 j ' 1 記錄元件可經加熱處理記錄元件之性質藉加熱改良。| 丨加熱處理可於通風口下面於高於50t：溫度進行至少4小時 丨 時間。於更高溫及更長時間通常效果更為改進°加熱處理! I溫度及時間受聚碳酸酯基材之塑化及於反射層1 6之反應所| 限。下表顯示不同碟片於95°C加熱不同時間之加熱處理範I I例。
第10頁 4 ^9658 五、發明說明（7) 表1 碟片 界 面 反射 % R@ % R@ % R@ % R@ % R@ % R@ 厚 度 層 1 日 2 a 3 曰 6 a 7 曰 12 曰 (毫微 米 ) 1 1 2 .6 Ag 53 .1 5 3 52 .9 53 .8 53 .7 53 9 2 8 . 4 Ag 5 2 .1 5 2.8 5 1 .7 5 2.0 5 1 .4 5 2 8 3 6 . 3 Ag 5 1 .7 52.1 49 .9 5 1 .0 52 .1 5 2 3 4 4. 2 Ag 5 1 .6 5 2.1 3 4 3 4 .1 3 3 .4 3 4 0 5 4 . 2 Ag 53 5 3.9 3 3.8 3 3 .8 3 3 .4 3 3 3 6 2 . 1 Ag 43 .9 4 1.8 3 2 3 2 .8 3 1 .8 3 2 0 7 2. i Ag 42 .5 40 3 3 .1 3 3.9 3 2.1 3 2 3 8 0 Ag 3 1 .2 3 0.4 29 ,6 3 0 .1 29 ,6 29 4 9 0 Ag 3 1 .8 3 0.4 29 8 3 0 .4 2 9 8 3 0 0 10 0 Ag 3 1 .2 3 1.1 30 .5 3 0 .7 3 0 .3 3 0 6 I 1 0 Au 39 .9 4 1.1 40 8 43 .7 43 .2 44 6 12 〇 Au 3 9 .9 4 1.3 40 .7 43 '4 43 5 44 6 1 3 0 Au 3 9 .7 4 1.1 40.6 43 .2 43 .4 44 4 3 4 0 Au 40 .6 42 . J 4 1.5 44 .3 43 .6 45 6 實例 使用相同構造及方法製造1 4片碟片’各自厚度大致等於 用於6 3 5毫微米用途之。此等記錄層係於下述製備條件 下以快速程序沉積於加凹溝的聚碳酸醋碟片基材上： 製備條件 記錄層：亞層1 2 a 至二Te標靶（WTe )個別之功率輸入-40瓦 至二Ge標靶（WGe )個別之功率輸入-1 80瓦 Ai"流速-13.3 SCCM(標準立方厘米/秒）
第11頁 4 ^658_ 五、發明說明（8) 曱烷流速-6. 0 SCCM 沉積時間-3 , 5秒 I己錄層：亞層1 2 b 至二Te標靶（WTe )個別之功率輸入-40瓦 至二Ge標把（WGe)個別之功率輸入-180瓦 Ar 流速-1 3. 3 SCCM 曱烷流速-1 0 . 0 SCCM 沉積時間-7. 0秒 此1 4碟片分成三組： 第1組一碟片編號# 1 1，1 2，1 3及1 4為金對照碟。碟片被 I 提供以濺散金反射層，厚7 0 0埃。 第2組一碟片編號# 8，9及1 0為銀對照碟。碟片被提供以 藏散銀反射層，厚700埃。 第3組一碟片編號# 1至7係使用不等厚度界面層及相同濺 散銀反射層，厚70 0埃製成。第3組碟片被提供以界面層， 界面層係於下述條件下使用各別塗佈機沉積：
Ge標乾（WGe)之功率輸入一35瓦 氬氣流速一1 8. 0 SCCM 甲烷流速一7 . 0 S C C Μ 沉積時間一3 0，2 0，1 5，1 0及5秒 界面層之校正厚度：1號碟1 2. 6毫微米；‘2號碟8. 4毫微 米；3號碟6. 3毫微米；4及5號碟4. 2毫微米；6及7號碟2. 1 毫微米。
1 4碟片中並無任一者被提供任何保護塗層。碟片於9 5 °C
第12頁 4ί^658 五、發明說明（9) 加熱處理1日。碟片穩定性之測量方法係於通風烘箱内老 化，並定期取出，使用分光光度計測量其於6 3 5毫微米之 反射率。參照圖3 (也參考圖1 )，其中顯示三組碟片之6 3 5 毫微米百分反射率呈於9 5 °C加熱老化之函數。老化資料包 括於8 0 °C及85 %相對濕度培育一日（第3日）。此等資料顯 示第一組碟片（使用金反射層而不含界面層之對照碟片）之 反射率隨著老化和缓增高，而對第二組碟片，亦即銀對照 碟片則相反為真。銀對照碟片反射率老化一日時比金對照 碟片低約8至9個百分點。基於光學常數，銀對照碟片之反 射率預期比金對照碟片更高。事實為銀碟片於一曰老化時 並未顯著劣化。第三組碟片具有薄界面層達4. 2毫微米， 最初具有高反射率但隨著老化連續劣化。其反射率變成實 質等於銀對照碟片之反射率，指示薄界面層無效。但系列 3碟片具有6. 3毫微米及以上厚度之厚界面層，即使於老化 1 2日後仍保有反射率。資料也顯示此等碟片具有比金對照 碟顯著更高的反射率，此點被視為另一優點。 具有界面層厚度於3至3 0毫微米之記錄元件其性質顯然 受加熱處理一段時間改變，選用之溫度可改良及穩定化其 性能。 本發明之其它特點涵括如下。 可錄式元件其中各亞層具有不同光學及熱性質。 可錄式元件其中鄰界面層之亞層具有比就鄰基材之亞 層更高的烴含量。 可錄式元件其中記錄層之®比鄰界面層部份具有比記錄層
第13頁 4i^65q 發明說明（ίο) 之毗鄰基材部份更高的烴含量。 可錄式元件此處界面層之厚度為3至30毫微米。 ： 可錄式元件此處界面層大致為透明。 | 可錄式元件此處光學記錄層厚度係於Rmin對應厚度之土 1 30 %以内。 | 可錄式元件其中Bit鄰界面層之亞層具有比®比鄰基材之亞 :層更高的烴含量。 | 該方法其中毗鄰界面層之亞層係以比毗鄰基材之亞層更 j I高的烴氣體流速沉積°
I j元件表列 10 基材 ；12a 亞層 12b 亞層 14 界面層 16 反射層 I 18 頂塗層
第14頁

Claims (1)

  1. 4 ΐ9θ*；ο 修疋 _11^8102548 j&\ 修正___ 六、申請專利範圍 I- ---- 二」 "" 1- 一種可錄式元件，其包含： (a) —基材’一光學記錄層沉積於該基材上，一光反射^ 層沉積於該記錄層上’及一界面層具有厚度於3至3〇毫微 米之範圍’且係插置於記錄層與反射層間，光學記錄層含 有TeaGebCcHdOe此處a，b，c，d及e為原子百分比而 a + b + c + d + e = l,0 0，及其中 i〇<a<40，10<b<60，5<c< 35，10 <d <35 , e 30 ;及界面層含有GewCxHyOz 此處w，x， y及z為原子百分比而^ +又+ 7 + ；2 = 1〇〇，及其中15<w<65，5 <x<35 *15<y<40，zg〇 ;及 (b) 記錄元件’具有藉由以加熱處理一段選用之時間和 溫度而改變的性質’以改善及穩定化其性能、 2. 如申請專利範圍第1項之可錄式元件，其中該界面層 之厚度係於3至30毫微米之範圍。 3. 如申請專利範圍第1項之可錄式元件，其中該界面層 大致為透明。 4. 如申請專利範圍第1項之可錄式元件，其中該光學記 錄層厚度係於Rein對應厚度之±30%以内。 5. 如申請專利範圍第1項之可錄式元件，其中該反射層 包括金、銀、銅或铭及其合金。 6. —種可錄式元件，其包含： (a) —基材’一光學記錄層沉積於該基材上，一光反射 層沉積於該記錄層上’及一界面層具有厚度於3至30毫微 米之範圍，且係插置於記錄層與反射層間，其中該記錄層 包含複數亞層’各亞層含有TeaGebCcHdOe此處a，b，c，d及 e為原子百分比而a + b + c + d + e = 100，及其中i〇<a<4〇，ι〇
    O:\57\57145.ptc 第1頁 2000.09.28.015 案號 88102548 4 19658 修正 六、申請專利範圍 <b<60 ’10<d<35 ’e^〇 ;及界面層含有 GewCxHyOz此處w，x，y及z為原子百分比*w + x + y + z = 1〇〇，及 其中 15<w<65，5<x<35 ’15<y<4()，Z2〇 ;及 - (b) 3己錄元件’具有性質藉由以加熱處理一段選用之時 間和溫度而改變的性質’以改善及穩定化其性能。 7.如申請專利範圍第6項之可錄式元件，其中該等亞層 具有不同的光學及熱性質。 8·如申請專利範圍第6項之可錄式元件，其中毗鄰界面 層之亞層具有比她鄰基材之亞層更高的烴含量。 9. 一種可錄式元件，其包含： & (a) —基材’一光學記錄層沉積於該基材上，一光反射 層沉積於該記錄層上，及一界面層具有厚度於3至毫微 米之範圍，且係插置於記錄層與反射層間，其中該記錄層 係沿其厚度方向連續分級且含有TeaGebCcHdOe此處a，b， c ’d及e為原子百分比獲得a + b + c + d + e = 100，及其中10<a <40 1 10 < b <60，5<c<35 > 10 < d <35，e20 ;及界面 層含有GewCxHyOz此處w、x、y及2為原子百分比獲得 w + x.+ y + z = l〇〇，及其中 15<w<65，5<x<35，15<y< 40，z 20 ;及 (b) 記錄元件，具有藉由以加熱處理一段選用之時間和 溫度而改變的性質，以改善及穩定化其性能。 10. 如申請專利範圍第9項之可錄式元件，其中該記錄層 之毗鄰界面層部份具有比記錄層之毗鄰基材部份更高的烴 含量。 11. 如申請專利範圍第9項之可錄式元件，其中該界面層
    O:\5-A57145.ptc 第2頁 2000.09.28.016 419658 ----素號 88102548__#-/ B 日 修正 六、_請專利^ --- 之厚度係於3至30毫微米之範圍。 12.如申請專利範圍第9項之可錄式元件，其令該界面層 大致為透明。 13‘如申請專利範圍第9項之可錄式元件，其中該光學記 錄層厚度係於Rmin對應厚度之±3〇 %以内。 1 4.如申請"專利叙圍第9項之可錄式元件，其中毗鄰界面 層之亞層具有比批鄰基材之亞層更高的煙含量β 15. —種製造可錄式元件之方法，其包含下列步驟： (a) 形成一基材及於該基材上濺散一層光學記錄層，其 包括二或多層亞層各自含有此處a，b，c ’ d及 e為原子百分比而a + b + c + d + e = 100，及其.中i.〇'<a<40，10 <b<60 >5<c<35 >10<d<35 - e>〇 ; (b) 於光學記錄層上藉濺散沉積_層薄界面層具有厚度 於3至30毫微米之範圍且含有GewCxHy〇z此處w、X、y及z為原 子百分比而w + x + y + z = l〇〇，及其中 i5<w<65，5<x<35， 15 < y <40 > z ^ 0 ； (c)形成一光反射層於該界面層上；及 (d )加熱處理記錄元件歷一段時間及溫度經選擇可改變 其性質因而改良及穩定化其性能。 16. 如申請專利範圍第15項之方法，其中該毗鄰界面層 之亞層係以比进鄰基材之亞層增高至烴氣流速沉積。 17. —種製造可錄式元件之方法，其包含下列步驟： (a)形成一基材及於該基材上濺散一層光學記錄層，其 具有分級組成含有TeaGebCeHdOe此處a，b，c，d及e為原子 百分比而a + b + c + d + e = l〇〇，及其中 <a <40，10 <b <
    ^ 196 58案號88102548 Μ年〆月巧曰 修正__ 六、申請專利範圍 60 5 5 < c <35 1 10 < d <35 1 e ^ 0 ; (b) 於光學記錄層上藉濺散沉積一層薄界面層具有厚t 於3至30毫微米之範圍且含有GewCxHyOz此處w、x、y及z為原 子百分比而w + x + y + z = 100，及其中 15<w<65，5<x<35， 15 < y <40 1 z ^ 0 ; (c) 形成一光反射層於該界面層上；及 < d)加熱處理記錄元件歷一段時間及溫度經選擇可改變 其性質因而改良及穩定化其性能。 18.如申請專利範圍第17項之方法，其中毗鄰基材之亞 層係使用低烴氣流速製造。 1 9.如申請¥利範圍第1 7項之方法，其中該毗鄰界面層 之亞層係使用高烴氣流速製造。 20.如申請專利範圍第17項之方法，其中該烴氣為f 貌。 2 1.如申請專利範圍第17項之方法，其中該反射層包括 銀、金、銅、鋁及其合金。 2 2.如申請專利範圍第1 7項之方法，其中該溫度係高於 5 0 °C及時間係超過4小時。 23.如申請專利範圍第17項之方法，其中該基材係由聚 碳酸酯或聚丙烯酸酯製造。
    O:\57\57145.ptc 第4頁 2000.09. 28.018
TW088102548A 1998-04-01 1999-02-22 Optical recording element with an interfacial layer between the recording layer and the reflecting layer TW419658B (en)

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WO2005018947A1 (ja) * 2003-08-21 2005-03-03 Mitsubishi Kagaku Media Co., Ltd. 記録媒体
JP4302606B2 (ja) * 2004-09-30 2009-07-29 Ｔｄｋ株式会社 光記録媒体
US20080056088A2 (en) * 2005-10-20 2008-03-06 Lanyo Technology Co., Ltd. Multiple Recording Structures for Optical Recording
US20080057256A2 (en) * 2005-10-20 2008-03-06 Lanyo Technology Co., Ltd. Micro-Resonant Structure for Optical Recording
US20070092681A1 (en) * 2005-10-20 2007-04-26 Shuy Geoffrey W Generating optical contrast using thin layers
US20080057257A2 (en) * 2005-10-20 2008-03-06 Lanyo Technology Co., Ltd. Contrast Enhancement for Optical Recording
US20080056089A2 (en) * 2005-10-20 2008-03-06 Lanyo Technology Co., Ltd. Generating Optical Contrast Using Thin Layers
US20080057255A2 (en) * 2005-10-20 2008-03-06 Lanyo Technology Co., Ltd. Contrast Inversion for Optical Recording
JP4487943B2 (ja) * 2006-01-31 2010-06-23 Ｔｄｋ株式会社 光記録媒体

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US6168901B1 (en) * 1993-01-08 2001-01-02 Eastman Kodak Company Recordable optical element using low absorption materials
US5585158A (en) * 1995-06-07 1996-12-17 Eastman Kodak Company Recordable optical element using low absorption materials
US5725741A (en) * 1996-04-12 1998-03-10 Eastman Kodak Company Method of forming recordable optical element using low absorption materials
US5733623A (en) * 1996-10-15 1998-03-31 Eastman Kodak Company Recording media for recordable element
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