TW416099B - Method for increasing the wafer production - Google Patents

Abstract

There is disclosed a method for increasing the wafer production, wherein the wafer is processed by a mask exposure procedure to obtain a maximum number of dies. The method defines a datum line in the wafer, and determines, around the datum line, a initial position of mask to obtain the maximum die production. Next, based on the initial position, the surface area of the wafer usable to produce dies is partitioned into multiple regions. Then, based on the terminal coordinate of each region and the length and width of the mask, it is applicable to determine the arrangement of the mask in each region, so as to perform the exposure process to the wafer. The present invention is suitable for the wafers with various diameters, and allows the wafer to be fully utilized, thereby avoiding the waste of production capability and increasing the utilization of the resource.

Description

41609S V. Description of the invention (1) [Field of the invention] The present invention relates to the integrated circuit manufacturing process, especially the method. [Background of the invention] Silicon wafers are expensive, and there are many restrictions on the use of photomasks. For example; on the wafer's positioning point, the edge of each wafer will not be crystallized with the fixtures, and the rounded edge of the wafer cannot be completely completed. The area is quite limited. The number of crystal cubes obtained will directly affect the crystal yield of the wafer: the configuration of the entire photomask on the wafer to obtain the most crystals: the problem to be broken. However, the current adjustment of the mask position for wafers is determined only by the experience of online operators. This is not good, and the wafer cannot be fully utilized, resulting in production. Therefore, it is necessary to target the configuration of the mask on the wafer. : Way to make the wafer get the most crystal output. : [Objective of the invention] The main purpose of the present invention is to propose an improvement that can make full use of the wafer area to obtain the most crystal wafers. I wafers define a reference line, and calculate the photomask output near the reference line. Position, and then divided into multiple areas according to the area of this light 丨 circle available for crystal output, the endpoint coordinates and the length and width of the photomask, determine the light can not be masked. The exposure of the grains hinders the production of the shaped grains, which makes the photomask process. Therefore, how to adjust the | i output is a waste of the reliability of the industry in many ways. Propose a better method for improving wafer output. This method is to obtain the most initial position of the crystal mask, and then the crystal is covered by each region in each region. 41609ε 5. Description of the invention (2) To expose the wafer. With the drawings and detailed descriptions below, you can better understand the features of the present invention. The internal drawings are one, two, three, and four crystals, No. 0402460, and the first and second figures in the first and second figures. . In the meaning of the diagram, round. Show the meaning of the crystal map. Cheng Yuanyuan shows the shape of the point-flow crystal crystal. The rule of the inch circle is not applied to the practical application. It should be used in response to the application: clearly, clearly, and clearly. When the invention said that the books of the original books:. The single system is the edge of the bright-capacity diagram. The circular diagram says that the multi-degree cover or the wide light is produced by the crystal domain, the domain, and the domain. Slightly light crystal crystals are mentioned as the availability of crystals in the circle 2 6 1 3 5 0 so that the wide first crystal 1 1 2 2 2 3 and the system, the degree and the length of the special features, Cheng Zhi to set up a clothing cover The light of the theatrical cover is the beginning of the bright circle of the circle, the circle of the circle, the circle of the circle, and the circle of the circle. That is, the crystal map doubles the light and is exposed in the square number.

41609S V. Invention description (3) is divided into multiple patterns), as shown in the figure below. First, it is near the j-line available for the wafer. For example, I can get a maximum of I and then divide it into multiple areas. Set the endpoint coordinates as coordinates I; set, that is, step j 丨 for the wafer | starting position is not 丨The number of exposures, I! Position provides light I to illustrate the first picture; because the crystals are not located at the point; as in the first picture, the lot number, the crystal j has no crystals to consider the above process system to locate the crystal on the wafer This mask field is produced by the distance from the crystal cube, that is, the origin (0, that is, step S 1 8 exposure, only one crystal that is shown at least. 10 out of the limit of; defines a reference line, that is, step The length of the product and the crystal square J is the starting position of the mask, which is half the width of the mask, that is, the starting position of the spleen B _ will be a circle for crystal steps S 1 4, * 4 and crystal, 0) For example, the center of the wafer s 1 6, the circle “W 4 M determines the light. Finally, according to the aforementioned photomask, that is, step S2r > 6 u. Among them, according to each of the following: the number of light in the starting position of the nine masks Mask starting position: First, to save costs. Dichuan 1 > Cycle 0 There are different exposure systems for 6-inch crystals The circle obtains a maximum of 'Wafer 10 has an edge of 2,5 mm (mm) with two positioning points A and B must not be decimal'. In step S 1 〇 boundary defines a reference line L 1 (ExpOSure For the detailed process, please refer to S 1 0 'followed by the root and width. Within the reference range, calculate step S] _ 2. The area of the output area is circled to an appropriate position to define the area covering each area. If the configuration of the configuration for each area is calculated as the optimal placement of the wafer, the limit is implemented by the implementation routine. For the method with crystal output, the flat side is used to record the production. The scope of the test is compatible with the process of the photomask. During the test, first, then the baseline

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41609S V. Description of the invention (4) Move a short distance near I L 1 successively, and calculate the starting position of the mask that can produce the most crystal: grains, that is, step S 1 2. In the process of step S 1 4, a straight line L is defined by the aforementioned starting position of the mask, and another straight line L 2 is defined by the distance of several masks on the straight line L1 '. Among them, in order to obtain the most grain output, the starting position of the mask should be placed on the flat side. The straight lines L1 'and L2 divide the wafer 10 into three regions, which are region 1 2 and region 1 respectively. 4 and area 16, wherein the area between the straight lines L 1 ′ and L 2 does not include the anchor point A or B. Consider that the positioning points A and B must not be exposed, and the subsequent process is used for grain cutting. A crystal width gap is used to avoid the positioning points A and B, and the regions 1 4 and 16 are divided into two upper and lower regions, respectively. The regions 1 4 2 and 1 44 1 and the regions 16 2 and 16 4 are divided into five regions. Next, step S 1 6 is performed. The center of the wafer 10 is taken as the origin (0, i 0), and then the mathematical coordinates of the diameter of the wafer 10 can be used to calculate the endpoint coordinates of each region! The photomask is arranged in each area for light exposure. For 8-inch wafers, the method to get the most crystal output is shown in Figure 3. Among them, 8 is called; the masking process cannot be performed on the two positioning points C and D on the wafer 20; the 2.5 mm (millimeter) range of the wafer 20 edge with the fixture will produce no grain. Considering the above process limitation, in the process of step S 10, firstly, a reference line L 3 is defined between the positioning points A and B according to the wafer direction, and a straight line L is defined by the boundary below the positioning point C or D. 5 is perpendicular to the reference line L 3, and then the reference line L 3 and 416095___ Fifth, the description of the invention (5) "

The straight line L 5 is successively relatively translated a short distance, and the grain output obtained by starting the exposure process at the intersection of two straight lines is calculated to select the starting position of the mask that can obtain the most multi-grain output, that is, step S 1 2. In the process of step | S 14, the straight line L is defined by the aforementioned starting position of the mask

I 3 'and 1 ^ 5', and the distance of several masks on the line L3 'defines another straight I line L4. Among them, the positioning points C and ID are not included between the straight lines L3 'and L4, and the distance between the two lines is a maximum integer multiple of the length of the mask. Consider that the positioning points C and D must not be exposed, and the subsequent process is used for die cutting. A gap with an i-square width is used to avoid the positioning points C and D, so that the wafer 20 can be used for crystal; the area of the grain output is divided. There are six areas, namely areas 2 1, 2 2, 23, 24, 25 and 26. After defining the endpoint coordinates of each area: After that, the configuration of the mask in each area is determined for exposure. I Among them, when the configuration of the mask falls on the edge of the wafer, this light is calculated

I | The available die output of the mask to determine whether to expose this mask, as shown in Figure 4; mask 30 includes six crystal patterns, some of which fall on the crystal

Outside the II circle, but if a part of the crystal square pattern on the mask 30 falls outside the wafer, there is no grain output, so it can be inferred that the area covered by the mask 30 is only ί; there are three grains output. In the actual operation process, when a part of the photomask falls outside the wafer, only the photomask with a die output greater than a certain preset value is exposed to be cost-effective. The following provides the crystals obtained by applying the present invention and the conventional technology to 8-inch wafers:

41609δ V. Description of the invention (6) Zheng Lashu Mei Fang · (a) Lu Quan (the number of exposures is given by the size of the length * width (mm), including the row * column and land size length * width (ran) 1 520 520 142 13.578 * 15.216 2 * 2 6.789 * 7.608 ~ 2 182 182 182 11.280 * 12.500 1 * 1 11.280 * 12.500 3 269 is called 282 8 18.260 * 20.440 2 * 2 9.130 * 10.220 512 534 9 18.260 * 17.280 2 * 3 9.130 * 5.760 5 432 1 447 8 14.940 * 23.280 3 * 2 4.980 * 11.640 It is known from the above table that under the same number of exposures, the output of the crystal cube obtained by the present invention is significantly increased compared with the conventional technology, and it can be achieved by the foregoing embodiment. It is understood that the present invention can make full use of wafers of different diameters to obtain the most crystal output. In addition, there is no constant force σ '. Please refer to the basis. Then cover the starting domain (the figure is supplemented by each area) The fifth aspect of the class of the crystal is that the wafer 4 is at the reference position, and the domain is not shown in the predicate. To help, there is a round exposure, and the line L of 0 is calculated by this issue. The available light process of the wafer is limited to the 4 direction of the wafer, and the photomask is calculated near the crystal 6 Start position 'and define the technology of each last exposure for 3 months to produce the best light crystals. The production of less than 0 circles and 4 circles of light can be obtained. The point is at the beginning of the mask. TJlj Cj The area of the J-leaf wafer is also increased, and the present invention is also applicable. It means a reference line, preferably the diameter is the reference line L 6 to obtain the light circle 40 with the most crystal cubes divided into multiple end points. Coordinates to determine the use of the mask first define a reference line position, and then according to this mask

41609S

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Claims (1)

41609S VI. Scope of Patent Application1. A method to increase the output of wafers, which uses a photomask for the wafer exposure process to divide many crystal cubes. The length and width of the photomask are _ the length of the crystal cube. And an integer multiple of the width, the method includes: defining a reference line; calculating a starting position of a mask near the reference line that allows the wafer to obtain the most crystal output; and placing the crystal according to the starting position of the mask The area of the circle that can be produced by the crystal cube is divided into multiple areas; the endpoint coordinates of each of the multiple areas are defined; and according to the endpoint coordinates and the length and width of the mask, the mask is determined in the area A configuration of a plurality of regions; and exposing the wafer according to the configuration. 2 · The method as described in item 1 of the scope of patent application, in which two vertical straight lines are successively moved relatively in parallel near the reference line, and the crystal output obtained by the intersection of the two vertical straight lines is calculated to select You can get the starting position of the mask with the most crystal output. 3. The method according to item 1 of the scope of patent application, wherein if the starting position of the photomask is a plurality, the starting position of the photomask corresponding to its required number of exposures is started by the photomask. The position t determines the optimal starting position, and the mask is provided for exposure. 4 * The method described in item 1 of the scope of patent application, wherein the starting position of the mask that can obtain the most crystal output is calculated within a half mask length from the reference line. 5 · The method according to item 1 of the patent application scope, wherein the plurality of regions 41609S 6. The scope of patent application is adjacent to each other. 6. The method according to item 1 of the scope of patent application, wherein the end coordinates of the plurality of regions are defined with the center of the wafer as the origin '. 7 · The method as described in item 1 of the scope of patent application, wherein according to the number of cubes on the mask and the available cubes available after the mask is exposed, the configuration is exposed for exposure. 8 · A method for increasing wafer output, which uses a photomask to perform an exposure process for the wafer to divide a number of crystal cubes. The length and width of the photomask are integer multiples of the length and width of the crystal cube. The method includes: defining a reference line; calculating a starting position of a mask near the reference line that allows the wafer to obtain the most crystal output; and according to the starting position of the mask and the length and width of the mask, The area of the wafer that can be produced by the crystal cube is divided into multiple regions, defining the endpoint coordinates of each of the multiple regions; the mask is determined according to the endpoint coordinates and the length and width of the mask A configuration in the plurality of regions; and performing exposure for the wafer according to the configuration. 9 _ The method as described in item 8 of the scope of patent application, wherein two perpendicular straight lines are successively moved relatively parallel to each other near the reference line, and the crystal output obtained by the intersection of the two perpendicular straight lines is calculated to select You can get the starting position of the mask with the most crystal output. 1 0 · The method as described in item 8 of the scope of patent application, wherein if the starting position of the photomask is plural, corresponding to each starting position of the photomask Page 12 41609S VI. Scope of patent application The required number of exposures is determined from the starting position of the mask, and the mask is provided for exposure. 1 1 _ The method as described in item 8 of the scope of the patent application, wherein the starting position of the mask produced by the crystal cube within the range of half the mask length from the reference line is calculated. 1 2 The method according to item 8 of the scope of patent application, wherein the plurality of regions are adjacent to each other. 1 3 _ The method described in item 8 of the scope of patent application, wherein the center of the crystal circle is used as the origin and the endpoint coordinates of the multiple regions are defined. 14 · The method as described in item 8 of the scope of patent application, wherein the exposure is based on the number of cubes on the photomask and the available crystals available after the photomask is exposed in the configuration. 1 5 _ — A method for increasing the output of a wafer. The wafer has at least one positioning point, which uses a photomask to perform an exposure process to divide many crystal cubes. The length and width of the photomask are the length of the crystal cube. An integer multiple of the width, the method includes: defining a reference line according to one of the anchor points; calculating a starting position of the mask near the reference line to obtain the most crystal cube output; according to the starting position of the mask and the The positioning point and the length and width of the mask, the area of the wafer available for crystal production is divided into multiple regions to define the endpoint coordinates of each of the multiple regions; according to the endpoint coordinates and the The length and width of the mask determine the mask 41609S on page 13 -------- " '~~ ------------------_______ Six, the configuration of the patent application scope in the multiple areas; And exposing the wafer according to the configuration. 16. The method as described in item 15 of the scope of patent application, wherein a vertical straight line is successively moved in parallel with each other near the reference line to calculate the crystal output that can be obtained at the intersection of the two vertical straight lines to obtain the most crystals. The starting position of the mask of the square output. 1 7 · The method as described in item 15 of the scope of patent application, wherein if the starting position of the mask is a plurality, the starting position of the mask should be started according to the number of exposures required for each starting position of the mask. The position determines the starting position, and the mask is provided for exposure. 18. The method as described in item 15 of the scope of patent application, wherein the starting position of the mask that can obtain the most output is calculated within the half mask length of the reference line. 19. The method according to item 15 of the scope of patent application, wherein the regions are adjacent to each other. 2 0 * The method described in item 15 of the scope of patent application, wherein the center of the wafer is the origin, and the endpoint coordinates of the multiple regions are defined 2 1 · The method described in item 15 of the scope of patent application , Which is the number of crystal cubes on the photomask, and the crystal output that can be obtained after the photomask is exposed. Expose the configuration " 2 2 _ — a method to increase the output of the wafer, the wafer has A flat side uses an optical mask to perform an exposure process to divide many crystal cubes, the length and width of which are integer multiples of the length and width of the crystal cube, the method includes: taking two, and selecting the light pair to the optimal distance crystal cube Multiple based on the 0 is valid, its mask that side Page 14 41609S _ —. ——..- ~ '—.-VI. Scope of Patent Application ~ ~ Define a reference line that is perpendicular to the flat edge. Calculate on the flat edge near the reference line to get the most. The starting position of the mask produced by the crystal; the area available for the crystal output of the wafer is divided into multiple regions according to the starting position of the mask and the length and width of the mask; defining the multiple regions The endpoint coordinates of each region; determine the configuration of the mask in the multiple regions according to the endpoint coordinates and the length and width of the mask; and perform exposure for the wafer according to the Suan configuration. 2 3 · The method described in item 22 of the scope of patent application, wherein if the starting position of the photomask is a plurality, the photomask is determined by the photomask according to the number of exposures corresponding to the starting position of the photomask. Determining the best starting position from the starting position 'Provide the mask for exposure = 2 4 · The method as described in item 22 of the scope of the patent application, where the calculation can be made within a half mask length from the reference line Get the starting position of the mask produced by the most crystal cube. 25. The method according to item 22 of the patent application scope, wherein the plurality of regions are adjacent to each other. 26 The method as described in item 22 of the scope of patent application, wherein the center of the wafer is used as the origin and the end coordinates of the multiple regions are defined. 2 7 · The method as described in item 22 of the scope of patent application, wherein the exposure is based on the number of cubes on the mask and the available cubes available after exposure of the mask. Page 15