TW399298B - Manufacturing method of via hole - Google Patents
Manufacturing method of via holeInfo
- Publication number
- TW399298B TW399298B TW087118499A TW87118499A TW399298B TW 399298 B TW399298 B TW 399298B TW 087118499 A TW087118499 A TW 087118499A TW 87118499 A TW87118499 A TW 87118499A TW 399298 B TW399298 B TW 399298B
- Authority
- TW
- Taiwan
- Prior art keywords
- via hole
- manufacturing
- inter
- photoresist layer
- layer
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 229920002120 photoresistant polymer Polymers 0.000 abstract 4
- 239000003989 dielectric material Substances 0.000 abstract 3
- 239000002184 metal Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 1
- 229920000642 polymer Polymers 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW087118499A TW399298B (en) | 1998-11-06 | 1998-11-06 | Manufacturing method of via hole |
US09/223,330 US6136694A (en) | 1998-11-06 | 1998-12-30 | Method for forming via hole |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW087118499A TW399298B (en) | 1998-11-06 | 1998-11-06 | Manufacturing method of via hole |
Publications (1)
Publication Number | Publication Date |
---|---|
TW399298B true TW399298B (en) | 2000-07-21 |
Family
ID=21631923
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW087118499A TW399298B (en) | 1998-11-06 | 1998-11-06 | Manufacturing method of via hole |
Country Status (2)
Country | Link |
---|---|
US (1) | US6136694A (zh) |
TW (1) | TW399298B (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100500932B1 (ko) * | 2001-09-28 | 2005-07-14 | 주식회사 하이닉스반도체 | 비아 콘택 식각 후의 감광막 제거 및 건식 세정 방법 |
US6573175B1 (en) * | 2001-11-30 | 2003-06-03 | Micron Technology, Inc. | Dry low k film application for interlevel dielectric and method of cleaning etched features |
KR20050017142A (ko) * | 2003-08-08 | 2005-02-22 | 삼성전자주식회사 | 린스 용액 및 이를 이용한 반도체 소자 세정 방법 |
US7235489B2 (en) * | 2004-05-21 | 2007-06-26 | Agere Systems Inc. | Device and method to eliminate shorting induced by via to metal misalignment |
US20060148243A1 (en) * | 2004-12-30 | 2006-07-06 | Jeng-Ho Wang | Method for fabricating a dual damascene and polymer removal |
EP2819162B1 (en) * | 2013-06-24 | 2020-06-17 | IMEC vzw | Method for producing contact areas on a semiconductor substrate |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5470693A (en) * | 1992-02-18 | 1995-11-28 | International Business Machines Corporation | Method of forming patterned polyimide films |
US5928207A (en) * | 1997-06-30 | 1999-07-27 | The Regents Of The University Of California | Microneedle with isotropically etched tip, and method of fabricating such a device |
US5970376A (en) * | 1997-12-29 | 1999-10-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Post via etch plasma treatment method for forming with attenuated lateral etching a residue free via through a silsesquioxane spin-on-glass (SOG) dielectric layer |
-
1998
- 1998-11-06 TW TW087118499A patent/TW399298B/zh not_active IP Right Cessation
- 1998-12-30 US US09/223,330 patent/US6136694A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US6136694A (en) | 2000-10-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
GD4A | Issue of patent certificate for granted invention patent | ||
MK4A | Expiration of patent term of an invention patent |