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Application filed by United Microelectronics CorpfiledCriticalUnited Microelectronics Corp
Priority to TW84105048ApriorityCriticalpatent/TW263599B/en
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Publication of TW263599BpublicationCriticalpatent/TW263599B/en
A method for preventing etching conductive layer from forming notching comprises the steps of: supplying one semiconductor substrate with one insulating layer on surface which looks severer due to bottom shape; forming one metal layer on the insulating layer; forming one anti-reflective layer on the metal layer; forming one photoresist on the anti-reflective layer with predetermined pattern and exposed partial reflective layer; with the photoresist layer as mask, etching the anti-reflective layer; with the photoresist and the reflective layer as mask, etching the metal layer.
TW84105048A1995-05-201995-05-20Method for preventing etching conductive layer from forming notching
TW263599B
(en)