TW396613B - Low resistance bitline structure with low bitline to bitline coupling capacitance and its methods - Google Patents
Low resistance bitline structure with low bitline to bitline coupling capacitance and its methods Download PDFInfo
- Publication number
- TW396613B TW396613B TW087105867A TW87105867A TW396613B TW 396613 B TW396613 B TW 396613B TW 087105867 A TW087105867 A TW 087105867A TW 87105867 A TW87105867 A TW 87105867A TW 396613 B TW396613 B TW 396613B
- Authority
- TW
- Taiwan
- Prior art keywords
- metal
- layer
- insulating layer
- opening
- bit line
- Prior art date
Links
- 230000008878 coupling Effects 0.000 title claims abstract description 17
- 238000010168 coupling process Methods 0.000 title claims abstract description 17
- 238000005859 coupling reaction Methods 0.000 title claims abstract description 17
- 238000000034 method Methods 0.000 title claims description 39
- 229910052751 metal Inorganic materials 0.000 claims abstract description 89
- 239000002184 metal Substances 0.000 claims abstract description 89
- 230000002093 peripheral effect Effects 0.000 claims abstract description 34
- 238000004519 manufacturing process Methods 0.000 claims abstract description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 40
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 33
- 235000012431 wafers Nutrition 0.000 claims description 31
- 239000004065 semiconductor Substances 0.000 claims description 27
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 claims description 22
- 239000003990 capacitor Substances 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 13
- 238000001020 plasma etching Methods 0.000 claims description 11
- 239000004576 sand Substances 0.000 claims description 11
- 229910021332 silicide Inorganic materials 0.000 claims description 11
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 11
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 9
- 230000002079 cooperative effect Effects 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 8
- 238000009413 insulation Methods 0.000 claims description 8
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- 239000005388 borosilicate glass Substances 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 5
- 239000005360 phosphosilicate glass Substances 0.000 claims description 5
- 229910000838 Al alloy Inorganic materials 0.000 claims description 4
- 239000005380 borophosphosilicate glass Substances 0.000 claims description 4
- 235000015170 shellfish Nutrition 0.000 claims description 4
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 claims description 4
- 229910021342 tungsten silicide Inorganic materials 0.000 claims description 4
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 2
- 238000000992 sputter etching Methods 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims 2
- 150000002500 ions Chemical class 0.000 claims 2
- 239000012808 vapor phase Substances 0.000 claims 2
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 claims 1
- MXSJNBRAMXILSE-UHFFFAOYSA-N [Si].[P].[B] Chemical compound [Si].[P].[B] MXSJNBRAMXILSE-UHFFFAOYSA-N 0.000 claims 1
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 238000009434 installation Methods 0.000 claims 1
- 238000004898 kneading Methods 0.000 claims 1
- 210000002784 stomach Anatomy 0.000 claims 1
- 238000002955 isolation Methods 0.000 abstract description 2
- 239000007769 metal material Substances 0.000 abstract 2
- 238000005468 ion implantation Methods 0.000 description 15
- 229920002120 photoresistant polymer Polymers 0.000 description 15
- 229910052698 phosphorus Inorganic materials 0.000 description 8
- 239000011574 phosphorus Substances 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 238000001459 lithography Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- -1 Boron ions Chemical class 0.000 description 4
- 230000005669 field effect Effects 0.000 description 4
- HAYXDMNJJFVXCI-UHFFFAOYSA-N arsenic(5+) Chemical compound [As+5] HAYXDMNJJFVXCI-UHFFFAOYSA-N 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000007853 buffer solution Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 235000003642 hunger Nutrition 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 235000012054 meals Nutrition 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- WQLQSBNFVQMAKD-UHFFFAOYSA-N methane;silicon Chemical compound C.[Si] WQLQSBNFVQMAKD-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Landscapes
- Semiconductor Memories (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW087105867A TW396613B (en) | 1998-04-17 | 1998-04-17 | Low resistance bitline structure with low bitline to bitline coupling capacitance and its methods |
| JP12240098A JP3950547B2 (ja) | 1998-04-17 | 1998-05-01 | 低いビット線間結合容量を有する低抵抗ビット線構造の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW087105867A TW396613B (en) | 1998-04-17 | 1998-04-17 | Low resistance bitline structure with low bitline to bitline coupling capacitance and its methods |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW396613B true TW396613B (en) | 2000-07-01 |
Family
ID=21629897
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW087105867A TW396613B (en) | 1998-04-17 | 1998-04-17 | Low resistance bitline structure with low bitline to bitline coupling capacitance and its methods |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP3950547B2 (ja) |
| TW (1) | TW396613B (ja) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100393971B1 (ko) * | 2000-12-29 | 2003-08-06 | 주식회사 하이닉스반도체 | 임베디드 디램 로직의 비트라인 및 그 형성방법 |
| JP2004128395A (ja) | 2002-10-07 | 2004-04-22 | Renesas Technology Corp | 半導体装置及び半導体装置の製造方法 |
| EP2328171A1 (en) * | 2002-12-27 | 2011-06-01 | Fujitsu Semiconductor Limited | Method of producing dram integrated circuit device |
| WO2005024957A1 (ja) | 2003-08-29 | 2005-03-17 | Fujitsu Limited | 半導体装置とその製造方法 |
| JP2009246374A (ja) * | 2009-06-04 | 2009-10-22 | Renesas Technology Corp | 半導体装置 |
| KR20130044496A (ko) * | 2011-10-24 | 2013-05-03 | 에스케이하이닉스 주식회사 | 배선 상에 셀 패턴이 형성되는 반도체 메모리 소자 및 그 제조 방법 |
-
1998
- 1998-04-17 TW TW087105867A patent/TW396613B/zh not_active IP Right Cessation
- 1998-05-01 JP JP12240098A patent/JP3950547B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP3950547B2 (ja) | 2007-08-01 |
| JPH11307742A (ja) | 1999-11-05 |
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| GD4A | Issue of patent certificate for granted invention patent | ||
| MK4A | Expiration of patent term of an invention patent |