TW388086B - A new temperature compensation method for semiconductor wafers in rapid thermal processor using separated heat conducting rings as susceptors - Google Patents

Abstract

The ""Temperature compensation method for semiconductor wafers is rapid thermal processor using separated hea conducting rings as susceptors"" is a new temperature compensation concept suitable for rapid thermal processor without uniform temperature distributions. Concentric heat conducting rings with different diameters are used as paterned susceptors. By proper arrangement of hat conducting rings, one can make the semiconductor wafers have uniform temperature distribution in a non-uniform heatd rapid th ermal processor. This is a very simple and cheap method for solving the temperature non-uniformity problem in the rapid thermal processor.

Description

A7 B7 Amendment V. Description of the invention (1) The invention of the Hu Yuben spine is related to a spillover compensation method applicable to a rapid heat treatment system with an uneven distribution, the method is simple and lean, and JL can be effective 5 Improving + unevenness of the rapid distribution of the rapid heat treatment system between Zhao. Background of the invention The development of the electronic technology of Huanhuan Electronic Co., Ltd., the size of the semi-conducting Zhao element is getting smaller and smaller. It is now the sub-micron for the development of U It ra Large Sea led Integrated Circuit (ULSI). Nothing is wrong-the gate gasification layer thickness of Zhao M0SFET, a half gas field effect transistor of gold gas, is also developing towards an ultra-thin thickness of 50 Λ. If grown with a traditional high-overflow furnace, a high-quality ultra-thin gasification layer cannot be obtained. In order to obtain a high-quality ultra-thin gasification layer, the key technique is to use a rapid thermal processing system (Rap id. Thermal Processing * RTP) for 15 minutes. ° The traditional rapid thermal processing system, the heating method is from the top of the system. A set of parallel halogen lamps are heated, and each lamp heats the wafer to be processed below 20 with the same output power. It is a single-sided heating system. However, the problem of uneven temperature is the fatal injury of Fu Tong's rapid heat treatment system. The problem of this temperature unevenness is mainly caused by the following reasons: First, the heat emitted by the wafer circle is more hot. Second, the cold air pair 24 in the heat treatment system will make the lightness around the wafer lower. Third, the placement of halogen lamps makes 3 paper sizes applicable to Chinese National Standards (CNS) Α4 specifications (2 丨 〇 > < 297 meters) --------- C equipment-(please first Read the note on the back of the page and fill in this page.) △ Printed by the Central Standards Bureau of the Ministry of Economic Affairs and printed by the Shellfish Consumer Cooperative A7. B7. V. Invention Description (1) The invention of the Hubei thorn is related to a kind of non-uniform distribution. The method of catching and compensating for the distributed rapid heat treatment system is simple and lean, and JL can effectively improve 5 + uneven distribution of rapidity of the rapid heat treatment system. Background of the invention The development of the electronic technology of Huanhuan Electronic Co., Ltd., the size of the semi-conducting Zhao element is getting smaller and smaller. It is now the sub-micron for the development of U It ra Large Sea led Integrated Circuit (ULSI). Nothing is wrong-the gate gasification layer thickness of Zhao M0SFET, a half gas field effect transistor of gold gas, is also developing towards an ultra-thin thickness of 50 Λ. If grown with a traditional high-overflow furnace, a high-quality ultra-thin gasification layer cannot be obtained. In order to obtain a high-quality ultra-thin gasification layer, the key technique is to use a rapid thermal processing system (Rap id. Thermal Processing * RTP) for 15 minutes. ° The traditional rapid thermal processing system, the heating method is from the top of the system. A set of parallel halogen lamps are heated, and each lamp heats the wafer to be processed below 20 with the same output power. It is a single-sided heating system. However, the problem of uneven temperature is the fatal injury of Fu Tong's rapid heat treatment system. The problem of this temperature unevenness is mainly caused by the following reasons: First, the heat emitted by the wafer circle is more hot. Second, the cold air pair 24 in the heat treatment system will make the lightness around the wafer lower. Third, the placement of halogen lamps makes 3 paper sizes applicable to Chinese National Standards (CNS) Α4 specifications (2 丨 〇 > < 297 meters) --------- C equipment-(please first Read the note on the back and fill in this page), printed by Shelley Consumer Cooperative, Central Standards Bureau, Ministry of Economic Affairs

A7 B7 V. Description of the invention () The invention has another purpose, which is to reveal the design of a set of separated concentric circular heat-conducting rings, which are placed on a quartz wafer or 5 silicon wafer as a base in a suitable combination. . The wafer to be heat-treated is placed on this base, and the combination of thermally conductive rings of different radii can be adjusted, so that the original uneven temperature distribution system can achieve a uniform temperature distribution. Those skilled in the art will undoubtedly know the objects and advantages disclosed by the present invention after reading the following detailed description of the preferred embodiments shown in different diagrams. Brief description with circle 15 The first picture is a schematic diagram of the position configuration of the present invention in a conventional rapid heat treatment system 1 ... air flow control valve 2 ... by plain lamp 3 ... · water-cooled pipe 4 ... air-cooled pipe 5 .... air outlet 6 ... · to pumping pump 7 ... to temperature controller 8 ... · thermocouple 9 ... · wafer support substrate 2〇11 ... · nitrogen 12 ... .Laugh gas 13 ..... Ammonia gas is the second preferred embodiment of the present invention. Figure 9 ... · Wafer support substrate 91 ... · 3-inch silicon wafer 92 ... Send ring 6 (please first η Read the note on the back and fill in this page again.) Order the print from the Central Government Bureau of the Ministry of Economic Affairs and the Consumer Cooperatives of the Ministry of Economic Affairs. «This paper size is based on the Chinese government's National Union (CNS) A4 size (210 X 297 mm). 83. 3.10, 000 A7

V. Description of the invention (2) 1 The light energy received by the W portion of the wafer is greater than the light energy received by the edge portion of the wafer. Therefore, the middle wave of the wafer is higher than the edge temperature. In actual cases, the difference between the center and edge of the wafer can be as high as above. 5 In order to improve the fans, Zhao, edited by R. Singh in 1989.

Society for Optical Engineering proposed a temperature compensation method in 4141 of this article, which uses a ring of silicon larger than the silicon ring of the chip to absorb light and mechanically compensate for the overflow of the wafer. However, this overflow captures the compensation. It can only reach a certain degree of rent, and the overflow in the middle of the chip will still be greater than the overflow of the edge. 15¾ or more 10 σ bJ Cho et al., 1994 IEEE Trans, on Semicond. Manuf., Volume 7, Issue 3, No. 345¾ wash out The specially designed optical reflection geometry allows the wafer to be heated by the reflected light on both sides of the wafer * to reduce the problem of uneven temperature distribution of the wafer. However, the reflection geometry designed for a specific temperature does not affect the other. A failure temperature may not apply. BJ Cho et al. 15 persons in 1994 IEEE Trans, on Semicond. Manuf., Vol. 7, No. 3, p. 345, and in 1995 KCSaraswat et al., Mat. Res. Symp. Proc 387, No. 35K also Find: Adjust the position of the halogen lamp and the dynamic output power of the lamp to reduce the problem of uneven temperature distribution of the wafer. However, the method of addiction is more complicated and expensive, and the 20 methods need to be fast The heat treatment system is completely changed, and the rapid heat treatment system of Berry has to be reported as a result. It is a waste of resources for those who have the old type of rapid heat treatment system. In addition, according to pYWng et al.'S research in Mat, Res. Symp. Proc. No. 387 No. 15S, if the wafer surface 24 has grown other materials and candle-shaped different patterns, Crystal 4 This paper size is applicable to China National Standard (CNS) A4 specification (210X297 mm)

Printed by the Central Economic and Technical Bureau of the Ministry of Economic Affairs and Consumer Cooperatives. 5. Description of the Invention (5) The third picture shows the effect of the combination of different silicon rings on the quartz substrate on the growth of the ultra-thin silicon oxide thickness distribution. Three pictures (a) Quartz substrate (30 sec) 5 Third picture (b) Silicon rings 1, 3, 4 placed on quartz substrate Third picture (c) Silicon rings 5, 6, 7 placed on quartz substrate Fourth The circle is the influence of the combination of different silicon rings on the dream substrate of the present invention on the growth of the thickness distribution of the ultra-thin silicon oxide layer. The fourth figure (a) quartz substrate (30 sec) ίο the fourth silicon ring 1,3 4 is placed on the quartz substrate. (C) Silicon ring 5, 6, 7 is placed on the quartz substrate. The preferred embodiment of the temperature compensation method with the structure of the present invention is used to illustrate the composition and reachable effect of the present invention. . 15 The equipment of the present invention is manufactured by using the traditional rapid heat treatment system as shown in the first figure. The "separated concentric heat conducting ring" of the present invention is placed on the lower part of the rapid heat treatment system, so that the upper pixel lamp tube is used for wafer processing. Single-sided heating. 20 The technology of the present invention "a temperature compensation method suitable for rapid heat treatment systems" is a method that uses heat conduction or heat radiation to make the higher heat energy received by the heated object be guided to the lower heat energy by the guidance of the mat. , Through the appropriate geometric shape and combination of the mat to achieve uniform temperature compensation (please read the precautions on the back before filling this page)

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A7 B7 Printed by the Central Government Bureau of the Ministry of Economic Affairs, Shellfish Consumer Cooperative, Co., Ltd. 5. Description of the invention (3) The film itself will also have different thermal radiation properties due to different materials. Even if the wafer is placed in a heating system, its surface Spillage is still uneven, and so far there is no effective countermeasure for this kind of unevenness washed out by pattern. 5 Therefore, in order to solve the problem of unevenness of the traditional rapid heat treatment system more reasonably, so that each speed-determination heat treatment system can exert its maximum efficiency, and improve the overflow caused by the pattern. He asked Zhao, the inventors and others to use his unique knowledge of traditional rapid heat treatment systems10 and his professional knowledge of heat transfer. After continuous experimentation, he discovered that this was simple, economical, and well-informed. Temperature trapping method. Brief description of the invention 15 The main feature of the present invention is that it is used in the traditional rapid heat treatment system. Because it is a single-sided wafer heating system, the base that is heated on the other surface must be the colder part. Now design a proper heat conduction or light emission path, so that the heat energy of the hot part of the wafer is guided to the colder place below. 20 The heat energy is appropriately channeled, so that the heated wafer above reaches the overflow compensation. Effect. Another object of the present invention is to use a very simple and economical Pan-Catch-24 method to greatly improve the general quick-fabrication. "The temperature of the processing system is not uniform. Zhao 5 V Please read the notes on the back before filling (This page)

VT Γ -¾ This paper size applies to China National Standard (CNS) A4 (210X 297 mm)

A7 B7 V. Description of the invention () The invention has another purpose, which is to reveal the design of a set of separated concentric circular heat-conducting rings, which are placed on a quartz wafer or 5 silicon wafer as a base in a suitable combination. . The wafer to be heat-treated is placed on this base, and the combination of thermally conductive rings of different radii can be adjusted, so that the original uneven temperature distribution system can achieve a uniform temperature distribution. Those skilled in the art will undoubtedly know the objects and advantages disclosed by the present invention after reading the following detailed description of the preferred embodiments shown in different diagrams. Brief description with circle 15 The first picture is a schematic diagram of the position configuration of the present invention in a conventional rapid heat treatment system 1 ... air flow control valve 2 ... by plain lamp 3 ... · water-cooled pipe 4 ... air-cooled pipe 5 .... air outlet 6 ... · to pumping pump 7 ... to temperature controller 8 ... · thermocouple 9 ... · wafer support substrate 2〇11 ... · nitrogen 12 ... .Laugh gas 13 ..... Ammonia gas is the second preferred embodiment of the present invention. Figure 9 ... · Wafer support substrate 91 ... · 3-inch silicon wafer 92 ... Send ring 6 (please first η Read the note on the back and fill in this page again.) Order the print from the Central Government Bureau of the Ministry of Economic Affairs and the Consumer Cooperatives of the Ministry of Economic Affairs. «This paper size is based on the Chinese government's National Union (CNS) A4 size (210 X 297 mm). 83. 3.10, 000

Printed by the Central Economic and Technical Bureau of the Ministry of Economic Affairs and Consumer Cooperatives. 5. Description of the Invention (5) The third picture shows the effect of the combination of different silicon rings on the quartz substrate on the growth of the ultra-thin silicon oxide thickness distribution. Three pictures (a) Quartz substrate (30 sec) 5 Third picture (b) Silicon rings 1, 3, 4 placed on quartz substrate Third picture (c) Silicon rings 5, 6, 7 placed on quartz substrate Fourth The circle is the influence of the combination of different silicon rings on the dream substrate of the present invention on the growth of the thickness distribution of the ultra-thin silicon oxide layer. The fourth figure (a) quartz substrate (30 sec) ίο the fourth silicon ring 1,3 4 is placed on the quartz substrate. (C) Silicon ring 5, 6, 7 is placed on the quartz substrate. The preferred embodiment of the temperature compensation method with the structure of the present invention is used to illustrate the composition and reachable effect of the present invention. . 15 The equipment of the present invention is manufactured by using the traditional rapid heat treatment system as shown in the first figure. The "separated concentric heat conducting ring" of the present invention is placed on the lower part of the rapid heat treatment system, so that the upper pixel lamp tube is used for wafer processing. Single-sided heating. 20 The technology of the present invention "a temperature compensation method suitable for rapid heat treatment systems" is a method that uses heat conduction or heat radiation to make the higher heat energy received by the heated object be guided to the lower heat energy by the guidance of the mat. , Through the appropriate geometric shape and combination of the mat to achieve uniform temperature compensation (please read the precautions on the back before filling this page)

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A7 B7 V. Explanation of Invention (6) 1 For some parameters, special patrol compensation conditions are required. T will treat both the whole body and the substrate when making it. For the reason of the present invention, "a kind of excitable tip suitable for rapid heat treatment system" J. It is also possible to lengthen the thickness of the ginseng which has the ability to catch the overflow, and add a device for self-service lifting below it. The computer conducts thermal conduction chess analysis and control, and cooperates with facilities for self-service control. Know the degree of heating of some points of the surface ring and the matrix, and operate in combination with the tritium conduction or heat radiation system, so that the higher heat energy is transmitted to the lower heat energy, and the temperature compensation system 10 can be self-honored. Inventive technology Γ—A kind of whole object suitable for rapid thermal processing buried system ”, its shape can be circular, two-dimensional space point moments, or any geometric shape that meets the needs of the conscious subsystem, such as long Bar, 15 triangle, quadrilateral, pentagon, hexagon, etc. Its size is also small due to the needs of the government's electronic system 'and is not limited in size. As for the material of the meal and the substrate, quartz, silicon carbide (Sic), or other materials with high temperature resistance properties can be selected. Printed by the Central Standards Bureau of the Ministry of Economic Affairs, Shelley Consumer Cooperatives. As shown in the second figure, the present invention is a silicon wafer made of concentric circles by chemical engraving. Each silicon ring is 300um thick. Study 4 made 9 dirty, the ring spacing was lmm.矽 These silicon rings are labeled with numbers from 1 to 7 and sampled as shown in the second figure. These hard rings are placed on a quartz 24 substrate or a silicon substrate in an appropriate combination, and the wafers to be processed are placed. On the silicon ring, the size of the 8 papers is applicable to the Chinese National Standard (CNS) A4 specification (210 ×: 297 mm) A7 B7 Printed by the Central Consumers ’Bureau of the Ministry of Economic Affairs and Consumer Cooperatives V. Invention Description (7) 1 Fang Zhisu enters the tube to heat the wafer on one side. When the base is a quartz base branch • Since quartz is a heat-insulating material, it is not possible to dissipate the thermal energy under the hair chip through thermal conduction. Therefore, the thermal energy is dissipated by means of thermal light emission. With this binding, the function of the two rings of the dream is to limit heat and light, and the heat energy of the part with a hard ring is less likely to be lost. When the substrate is a silicon substrate, the silicon substrate under the wafer can be directly heated by the light, and its overflow is lower than that of the hair piece above. So * Through the conduction of the hard disk, thermal energy will be conducted from the hotter hard chip to the cooler dream base. And the precious chip itself will redistribute its own spillage through its own heat conduction characteristics. Therefore, if the position of the wonderful face ring 10 can be adjusted appropriately, so that the hotter part in the middle of the original watch also has more thermal energy transmitted into the blessing to the bottom, plus the heat conduction characteristics of the precious chip itself, then The error between the middle and the edge of the dream chip can be compensated to within 5¾ or even smaller, but this depends on the accuracy of the silicon ring: 15 As shown in the third and fourth figures, broken rings with different arrangements are placed on the quartz substrate and silicon substrate, which have different effects on the thickness distribution of the growth of ultra-thin dream oxide layers. The third frame and the fourth image are shown. The gasification layer of the dream in the third circle and the fourth picture, the gasification condition is the use of a 3-leaf P-type (100) dream wafer, growing at 960 C and 500torr for 20 seconds for 30 seconds. No rotation. As can be seen from the third and fourth figures, whether using a quartz substrate or a silicon substrate for growth, an appropriate silicon-silicon combination can improve the uniform distribution of the thickness of the oxide layer, and the value of the ring combination is as shown in the figure. As shown in Figure 3 (c) and Figure 4 (c), the 24 pieces of the ring combination used are numbered 5, 6, and 7. In addition, 9 paper sheets are used for the standard of Chinese National Standard (CNS) A4 (210X297 mm). (Please read the precautions on the back before filling this page.) Γ • Shang. Consumption cooperation Du printed A7 B7 V. Description of the invention (8) 1 It can get thicker and more oxidized. This is because the dream substrate blocks the heat radiation under the dream chip, and the dream base is ~ The edges are also heated by light energy so that the edges of the Dream Λ film are also subjected to more heat energy. For a quartz substrate, the quartz substrate is rough. Because it is transparent, it is not easily heated by light energy. The radiation energy 5 is emitted from under the silicon wafer. In addition, the edge of * Jin A is not heated by thermal energy. Therefore, the thickness and uniformity of hafnium oxide grown using the dream substrate are better than those using the quartz substrate. With this new method of warm leather weaponry, regardless of the thickness of the wonderful ring, no matter how the original overflow distribution of the system is, and the material of the non-round substrate is quartz or silicon wafer, as long as the silicon® ring can be properly adjusted. The combination can make the wafer to be processed have a uniform temperature distribution. If it can be grown with rotation, the uniformity of the overflow skin will be better. 15 This temperature compensation method improves the problem of uneven distribution of the overflow distribution in the traditional rapid heat treatment system in a simple and convenient manner. The problem of the uneven distribution of temperature caused by the pattern can also be improved by this method. Its new nature and practicality are of great industrial and commercial value. 20 Broken rings can also be replaced by other materials, such as quartz or SiC. In addition, the choice of round soil combination is more convenient if it is designed as a system that can be automatically selected by simply pressing the button. 24 According to the content disclosed by the above fans, it is clear that the present invention has the following advantages: _ 10 This paper size is applicable to China National Standards (CNS) A4 specifications (210X297 mm) (Please read the precautions on the back before filling in this Page)

1T A7 B7 V. Explanation of the invention (9) 1 1. The present invention uses the principle of heat conduction and heat radiation to improve the problem of the uneven distribution of the overflow distribution of the traditional block heat treatment system in a simple way. This is a very large guessing technique. The key technology street of Nilu renting-rapid heat treatment system'provides an effective and economical uniformity distribution technique. 5 2. The idea of the present invention can be applied to any system with uneven distribution of degree of overflow. Using the Proprietary Compensation® ring in an appropriate combination, in conjunction with the rotation of the abutment, the temperature distribution of the homogeneous sentence can be obtained. For non-rotating heating systems, you can also use the two-dimensional dot matrix array temperature compensation point to defeat the full-scale overflow compensation. 10 3. The present invention can cooperate with automatic control facilities to capture these overflows. Or Ma Jiezhen, lengthen its thickness from 300um to 50 cm, and add an automatic lifting device below it, which is analyzed and controlled by computer defeated chess, and can know and control the points of the circle or point matrix By connecting with the wafer, the mixing mechanism compensation system 15 can be self-serviced in this way. In addition to the broken material, the material used in the present invention can also use quartz or silicon carbide (SiC). Made of other materials that can withstand high spillages above 1000 p. Please read the precautions on the back first. ”The bookbinding and consumer co-op of the Central Bureau of Standards, the Ministry of Economic Affairs, Yinben 20 In summary, these are only illustrative examples of the present invention, and are not intended to limit the implementation of the present invention. Others Equivalent changes made without departing from the spirit and principles disclosed in the present invention should still be included in the patent iL® described below. 24 11 This paper size applies to China National Standard (CNS) A4 (210X297 mm)

Claims (1)

A8 B8 C8 The scope of patent application is printed by the Central Bureau of Standards, Ministry of Economic Affairs, Shellfish Consumer Cooperatives. • A method of flooding compensation applicable to rapid heat treatment systems. • A method that uses heat conduction or heat radiation to make the heated object receive higher heat energy. The cover is guided by the whole object and transmitted to the place where the thermal energy is low, and the proper geometry and combination of the whole object are arranged to achieve the effect of uniform compensation. 2 ♦ If the temperature compensation method of item 1 of the patented patent garden is used, the shape of the cushions can be circular, two-dimensional space points can be left open, or any geometric shape that meets the needs of the electrical system. 3. If the temperature compensation method of item 2 of the patented gas garden is applied, the shape of the cushions is long, triangular, quadrangular, pentagonal, hexagonal, etc. 4. If the temperature capture compensation method of item 1 of the patent application park is applied, for some substitutes, special conditions 2 capture compensation conditions can be used to plant both the general product and the substrate. 5. In case of claiming the overflow compensation method of the first paragraph of the patent guess, the material of the whole and the substrate can be quartz, SiC, or other materials with high temperature properties of 1000. 6 ♦ If you apply for the overflow catch method of item 1 of the patented patent garden, you can extend the thickness of the whole object with temperature compensation ability, and install a self-service device under it for thermal conduction by the computer. Simulation analysis and control, S is a facility for automatic control; it not only measures the degree of heating of certain points of the ring and the point matrix, but also operates in combination with a heat conduction or heat radiation system, so that the higher heat energy is transmitted to the lower heat energy. , To achieve the self-honour of the capture system. 12 This paper size applies to China's national kneading rate (CNS) A4 size (210X297 mm) (Please read the precautions on the back before filling this page) Binding · Order ιίν