經濟部智慧財產局員工消費合作社印製 A7 ___—__ B7 , f 五、發明説明（1 ) ~ " 技術範, 本發明係關於X-射線光罩，及尤其係關於具有良好的耐 彎曲性，並界定任何期望曝光範圍之通用尺寸的光罩。 發明背吾 知體電路（I C )技術已發展至可使用平面技術在同一半導 體晶片上製造大量完整電路之程度。典型上係使用微影技 術將電路併入於晶圓上。各電路可包括以預先選定的配置 方式電互連的大量组件，諸如電晶體、二極體、電阻器、 電容器等等。於將電路组件形成於晶片上後，將晶片進行 測4，並切割成包含選定電路陣列之個別晶片，將其進〜 步加工，並囊封成記憶體、邏輯或其他丨C。 微影技術被廣泛用於在需要良好解析度及高良率之半導 體晶片上形成電路圖案。使用光學步進（stepplng)技術， 可利用步進及重覆方法將—開始形成於光罩基材上之圖案 光學轉移至晶圓之光阻劑層上。步進及重覆方法包括將包 含供一部分晶圓用之圖案之光罩移至晶圓之未曝光部分， 及使用電磁輻射於將光罩圖案成像於晶圓上。於使圖案成 像後，移動晶圓並重覆曝光'繼續對各微影步驟之步進及 重覆方法，直至整個晶圓皆經曝光爲止。 原來的微影技術係在晶片上使用光阻劑層，及使用紫外 光或自然光於使b案曝光於晶片上。然而，紫外光及自然 光技術有解新度的限制。最終於防蝕劑中得到之解析度， 尤其受限於入射光之波長。 部分由於此限制，發展出x_射線石Μ於利用⑽ ____ _4_ ί紙張尺度適用中國國家標準（CNS ) Α4《格（―21〇>< 297公着^ — -— ----------壯衣------訂------線 (請先閱»背面之注意事¾再填寫本頁〕 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明说明（ χ_射線之較短波長在防蝕劑中使適當的圖案曝光。射線 之波長範圍一般係自約(^丨至1.0毫微米，其可顯著地改良 與石印法相關之解析度及每個晶圓的電路良率。 在X-射線石印法中，使用射線源，諸如同步加速器 ，於將X-射線之強烈的平行光束引導通過在半導體晶圓之 光阻劑層上方射線光罩。此光罩包括—中心、χ_射線 透明區域，其包括由X-射線吸收材料所形成之選定圖案。 X-射線在下方的光阻㈣中使與χ_射線吸收材料圖案相對 應之圖案曝光。 爲形成使用於X-射線石印法中之心射線光罩，使用—由 X-射線不透明材料，例如矽，所形成之平晶圓作爲基材。 此基材具有使用習知之㈣技術，例如，將適當的捧雜劑 擴散至基材内作爲_止點（eteh_st()p)，而㈣至拉 k之中〜區域。將基材結合至支承環，以提供光罩支承及 安定性。然後利用諸如電鍍之技術，將X-射線吸收材料， 例如，金，以適當的電路圖案選擇性地沈積於晶圓、 區域的上表面。 ^ 在另一種具體實例中，使一薄声之讲仆功 石為曰氮化石夕或鑽 HP 成長，及經由將晶圓基材蝕刻至成長 並在此層上形成X-射線吸收圖案而形成薄膜。成長層， 忮又將使用術t吾薄膜於指示爲χ _射線透明及支 不透明圖案·>曰η Γ- 1 J ~射線 〜w 0區域，而不管用以產生此 爲何。 匕及〈万法 使元成的光罩緊鄰於覆蓋正作用或負作用防蝕劑之半導 本紙張_歧朗 i — ： — -：----裝------1T------^ ___I_^請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明説明（3 ) 體晶圓，及外加X -射線，以使在下層半導體晶圓上之對應 的防蝕劑圖案曝光。 目前，將X -射線光罩中之薄膜尺寸調整至打算使用光罩 之特殊的晶片尺寸。因此’晶片的製造商必須備有供其可 ‘需要之不同尺寸薄膜.用之多種含薄膜基材。極度須要具 有夠大，而.可容納所有晶片尺寸之通用或標準化薄膜尺寸 之基材，已有人進行過一些嘗試，然而成效有限。 其問題在於此種通用尺寸的薄膜需夠大而可容納供不同 尺寸晶片用之不同尺寸圖案。然而.，使用此種大薄膜需要 結合曝光‘設備使用光閥（s h u 11 e 1. S )，以避免相鄰晶片的不 必要曝光。此種光閥之使用笨重，需要試驗性預曝光以決 '定屏蔽區域，且並非始終可完全有效防止非影像薄膜區域 及鄰接於期望標的區域之區域的至少—些照射。此外，薄 月吳丨逍時間的邵分射私由於無射損.壞而造成增加的光罩扭 曲。 發明總鈷 根據本發明，其提出一種具有良好耐扭曲性，且使用大 的標準化尺寸薄膜於提供配合期望尺寸晶片用之光罩的χ _ 射線光罩。此一曝光光罩尤其可有效用於石印法中^，使預 定尺寸曝光領域内之期望圖案曝光於晶片上，其包括： a) 具有平行上表面及下表面，且包括χ -射線透明薄膜之 貫質上X -射線不透明的基材； b) 包含期望圖案之在薄膜上之一層χ-射線吸收材料；及 c) 在X -射線不透明本體上表面及薄膜上表面之至少—部 -6 - I------^--^——种衣------、玎------# * Ϊ (請先閲讀之注意事項再填窝本頁) ,u - A7 A7 五、 發明説明（ 上万（$ X _射線阻斷/強化層。第一阻斷，強化層具有 轉期望曝光領域相稱及對準的第—χ_射線透明光罩框形區 域。 第一X-射線阻斷/強化層通常包含耐火金屬。在一較佳結 中基材G括台面，及薄膜和第一 X -射線阻斷/強化声 皆包含於台面中_。 基材係安裝於典型上爲ΝI s Τ環之環底座。 廷若須要，可將Χ_射線吸收材料之第二阻斷/強化層，其同 ‘可爲耐火i| ’放置於基材下表面上方。此層亦具有對 應於第-崎/強化層之第—框形區域，且與其對準之χ射 線透明框形區域。 圖示簡單説明 圖1顯示根據先前技藝之光罩之頂視圖。 圖2颁7F圖1之光罩沿箭頭2 _ 2之前視橫剖面。 圖3顯示根據本發明之光罩之前視橫剖面圖。 圖4顯示根據本發明之光罩之另一具體實例之前視橫剖面 圖0 圖5説明於將基材安裝於底座上後在薄膜中之扭曲。 圖6顯示根據本發明之光罩之又另一具體實例之頂視圖。 圖6 A顯示圖6所示之具體實例之頂視圖，其中晶圓之支 承底座爲方形。 圖7顯示圖6之光罩沿箭頭7_7之前視橫剖面。 發明之詳細説明 接下來將參照附圖説明本發明，其中在所有圖中以類似 -7- 本纸乐尺度適用令國國家標準（CNS ) A4规格（210X297公蒼） I .. I 1 ~抽衣 訂 線 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 A7五 、發明説明（ B7 經濟部智慧財產局員工消費合作社印製 、數目札’ΐτ颏似的凡件。所有圖爲用來説明本發明，而非 ^實際商業具體實例之概略圖示1此，僅將説明發明 唧需疋此等元件包含進來，及將技藝中所熟知且對説明發 月，非必要的兀件自圖中除去，以避免雜亂。 一圖及2員tf典型先前技藝光罩之不同圖示。如圖1及2所 示，根據習知技術構造之X-射線光罩包含X-射線不透明基 衬1 0，其典型上係由單晶石夕晶圓或其他適當材料所形成， …入有只Μ上圓形的頂視平面圖。基材」0分別具有實質 :行的上表面及下表面12及14。使用作爲基材10之典“ 阳圓馬直徑約1〇〇毫米及厚度約〇 62 5毫米，然而，亦可使 用其他尺寸，尤其係其他直徑的晶圓。 』在光罩基材ϋ程中，最先使適當的掺雜劑，諸如硼， it 1圓<上表面12及下表面14内。使测在晶圓内擴散 砥疋深度’及在後續之蝕刻步驟中作爲蝕刻止點。將晶 F'表面M上之方形中央區域20反應性離子蝕刻通過摻雜 的’木度’以使未掺雜矽暴露。然後利用乙醇胺及鄰苯二 疋水性混合物在未摻雜區域化學蝕刻晶 留下一薄的拉伸薄膜。此薄膜形成—約2.5微^^射 線半透明窗，其在窗形區域提供增加的[射線透射過基材 1下在本説明中，吾人將使用術語χ•射線透明於指示X 射線輻射可芽透過，而使基材曝光之區域，儘管在某此 體實例中，薄膜可能僅爲X -射線半透明。 説明於上的蚀刻及摻雜技術@一般熟悉$晶圓製造技術 人士熟知的技術。因此，不需進一步論述此等技術。 上 的 擴 至 圓 硼 酚 域 射 具 此外 ----^-----t.------IT------.^- (請先閲讀背面之注意事項再填寫本頁) -8 本紙張尺度適用中國國家標準（CNS ) Α4規格（210X297公釐） 五、發明説明（6 ) ^ 4技藝人士熟知之其他蝕刻技術亦係在本發明之範園 内。另外，本發明亦可使用適用於X-射線光罩用途之其他 薄挺材料，例如碳化攻、氮化碎、績石等等。 在亦爲熟悉技藝人士所熟知之後續的x _射線光罩製造步 驟中，將基材10之周邊區域結合至由玻璃或其他適當材料 所形成之環狀支承環2 4。支承環2 4爲约〗〇毫米寬及]〇毫 米厚，且其賦予基材之薄膜區域2〇強度、完整性及穩定張 力。雖然支承環通常爲圓形，且其可爲NiST環，但技藝中 亦知Η兒使用方形或平行四邊形的支承物，且此種非圓形的 每亦係在本發明之範圍内。可將發表於Faure等人之美國 專^1·! 5虎數5，] 2 4，5 6 1中之類型的應力均衡層包含進來。 經濟部智慧財產局員工消費合作社印製 然後將一層X -射線吸收材料2 6，例如，金、鎢、叙、或 其他適當的X _射線吸收劑，選擇性地沈積於基材之上表面 丨-上。此沈積可利用習知的電鍍、或濺艘及減.去圖案 (subtractl0n patterns)技術進行，其亦係熟悉技藝人士 所熟知。舉例來説，可使用説明sNakagawa，美國專利 5庑數4，8 8 1，2 5 7中之技術選擇性地.沈積χ_射線吸收材料， 其可降低X-射線吸收材料在X及γ方向之變形。在任何情 況中，將X -射線吸收材料沈積在用於石印法之光罩薄膜上 ，而形成電路圖案。可使用其他習知的製造技術於完成及 保護X-射線光罩基材上之圖案，包括加上未示於圖中之保 護層。 將Α成的X -射線光罩1 0裝設於X -射線石印步進器組合中 ，以使一部分覆蓋防蝕劑的半導體晶圓曝光，例如，如 -9- 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） A7 -------B7____ , 五、發明説明（7 ) ~ N a 1< a g a w a，美國專利號數4，8 8 1，2 5 7所示。 圖3顯示根據本發明所製造之光罩。此光罩同樣包含由單 晶砂或其他適當材料所形成之乂_射線不透明基材1〇，且其 具有實質上圓形的頂視平面圖。基材i 〇同樣可爲硬晶圓。 使用先前發表的相同蝕刻技術，將一部分的基材3 〇蝕刻掉 ’而形成大致爲圓形的X -射線透明薄膜3 2。然而，相對於 先前技藝之敎授，此薄膜之尺寸並未對應於特定尺寸晶片 I任何特殊曝光範圍，而係夠大以可容納不同尺寸晶片之 多種不同尺寸曝光範園。 接下來，在薄膜上方沈積一結合X -射線阻斷/薄膜強化層 3 4，其仏—以向楊式模數耐火金屬較佳之層，其實質上可 抑制X -射線輻射之通過，大約爲3微米厚。有用的耐火金 屬尤其包括Ta、TaSi、Taj、及W。可將耐火金屬沈積 爲單層或多層之組合，以形成阻斷/強化層3 4。 k 了作爲X -射線輪射之阻斷層外，此層同時可作爲提供 堅固框架，以支承薄膜防止扭曲，尤其係在安裝至底座環 時之強化層。 使用適當的蝕刻光罩層，在阻斷/強化層中，在薄膜3 2上 方敍刻一與製備光罩之曝光範園共同延伸之窗3 6，而形成 被阻斷/強化層框住之χ_射線透明區域。當然，亦可將阻斷 /強化層沈積於基材上，留下區域3 6未被覆蓋，而產生框形 备狀區域a以下將在薄膜上方在阻斷/強化層中之此X -射線 透明區域稱爲第一 X —射線透明光罩框形區域。 蝕刻阻斷層或以留下一區域未受覆蓋之方式將此等層沈 -10- 本紙張尺反適用中國國家標準（CNS ) A4規格（210X297公釐） {請先閱讀背面之注意事項再填寫本頁) .裝· 訂 經濟部智慧財產局R工消費合作社印製 i、發明説明（ Α7 Β7 經濟部智慧財產局員工消費合作社印製 積於表面上之技術係技藝中所熟知，且其係執業者的選擇 事項。 接下來在框形窗狀區域内在薄膜32上製作x_射線吸收材 料，諸如，比方説，金、Ta、Tasl之期望的曝光圖案26 。此同樣係、以技藝中熟知之方式使用減去或加成法及材料 完成。 圖4顯示本發明之另一種具體實例。在此具體實例中， 材40包括一台面42。基材分別具有實質上平行的上及下 形表面46及47。台面4.2具有上表面48。上及下環形表 及台面上表面皆爲互相平行的平面。 在本發明之一具體實例中，基材4〇爲直徑約1〇〇毫米 厚度約2 %米之市售矽晶圓；台面4 2亦爲圓形且與晶圓 心，並具有約57毫米之直徑。台面之上表面48高起於上 形表面4 6約1毫米。然而，亦可採用其他尺寸，尤其係 他直徑的晶圓，以上之尺寸係用來説明而非限制本發明。 再次使用論述於上之技術，經由將晶圓蝕刻通過光罩 預定深度，而在基材上形成一 X _射線透明薄膜5 〇。如同回 3之情況，並不將薄膜尺寸作成符合於特定的標的尺寸戈= 定的晶片，而係將其做的夠大以可容納預期最大的夕' 的尺寸。雖然將其説明爲方形，但其亦可爲圓形或最適合 於計劃用途之任何其他形狀。 ° 接下來在台面4 2之上表面4 8上方放置—χ_射線阻斷 化層3 4，其同樣以高楊氏模數耐火金屬較佳。同樣地， 等層典型上爲約3微米厚。 基 環 面 及 同 環 其 至 圖 強 此 ----------抽衣-------、玎------I - , (請先閲讀背面之注意事項再填寫本頁) -11 - 本紙張尺度適用中國國家標準（CNS ) Α4規格（210Χ297公釐） A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明説明（9 ) 如先IT所説明，此阻斷/強化層並未完全覆蓋住薄膜，而 係形成第一 X-射線透明光罩框形區域3 6。此χ_射線透明 框形區域再次係作成對應於光罩所達成之特定.晶片之期望 曝光範園的大小。阻斷/強化層再次環繞並框住透明區域。 於沈積阻斷/強化層並製作第—框形區域3 6後，再次將期 望的曝光圖案2 6放置於第—框形區域内之薄膜上。、 、如早先所論述，將基材安裝至支承底座，例如將矽晶圓 安裝至N I. S T或其他支承環之程序中會使薄膜產生—些扭曲 。如圖5所示，選擇台面之高度「h」，以致薄膜⑼，不會 歪斜至在其上表面48上之任何—點低於基材上表面“之程 度。如圖5所示’在薄膜上表面上之最低點爲點49。一條 平行於基材表面之線47顯示於將晶圓安裝至支承底座環Μ 後’點4 9仍保持於表面4 6上方。 接下來參照圖6及7,其説明本發明之又另一具體實例， 其中光罩包括-保護表膜67，及其中薄膜包括成長於台面 ^上表面上之—層56。如圖所示”料次可爲諸如先前所 况明心具有台面5 3之碎晶圓之支承物5 2的—部分$ *銀刻 缚，層56。此蚀刻部分界定當使用此類型薄膜時可資利 的取大‘的面積’且其超過使用此支承物之光罩所意圖 成之晶片大小之所有預期的標的面積。 祕層56延伸於開放面積54上。在所説明的具體實例 认的圖水5 8係利用減去法製造於此薄膜層$ 6上，其中先 將輻^收層66塗覆於薄膜層56上.，及經由選擇㈣移 :光氣園中、$分的輕射吸收層6 6，留下期望的圖案 至 達 中 除 而 ----;-----------裝------、玎------.^ (請先閲讀背面之注意事項再填寫本頁) -12- 本紙張尺度適用中國國家檩準（CNS ) * 公 經濟部智趫財產局員工消費合作社印製 A7 B7 五、發明説明（ιυ ) 製得標的圖案。如在先前的實施例中，此輻射吸收層包含 技藝中常用之材料諸如金、妞、矽酸钽、或可提供充分的 X-射線吸收’而可防止輻射敏感材料曝光於晶片上之任何 其他有用的此等材料，且其可方便地蝕刻而產生期望的圖 案。 如早先所論述且説明於圖3及4之情況，將具有第一框形 輕射透明區域6 1之輕射阻斷/強化層6 〇放置於輻射吸收層 6 6上。第一框形輻射透明區域6 1與期望晶片的曝光範圍一 致。. 光罩視需要可更包含形成於輻射阻斷/強化層6〇上之額外 的保護層或表膜6 7，諸如一層聚合物材料。表膜以延伸於 包括透明光罩框形區域6 1之阻斷/強化層之整個表面較佳， 且其可包括一或多個表膜通風孔道6.8。 . 視需要亦可將第二輻射阻斷/強化層6 2放置於薄膜5 6之 下侧。此第二阻斷/強化層62亦具有實質上與第—框形透明 區域相同且與第一框形透明區域對準的第二框形輻射透明 區域6 3。此第二層可改良X _射線雜散輻射之阻斷/強化， 及平衡由於存在第一阻斷/強化層6 0所造成之在表膜上之雇 變〇 層6 2可更包括用以調整光罩中之圖案之放大的構件6 4。 此等構件可爲壓電薄膜或致動器，其可用於校正放大誤声 ，如發表於M a 1 d ο n a d 〇，美國專利號數4，9 6 4，丨4 5。亦可 使用磁伸縮層供相同用途用。此等層典型上係由外部引動 ，且其可經由以經控制的方式施加應力扭曲薄膜，而.調整 -13- 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -----------择衣------'玎^-----0 (請先閱讀背面之注意事項再填寫本頁> 五、發明説明（11 A7 B7 經濟部智慧財產局員工消費合作社印製 影像大小。 在另一種具體實例由 '，可將薄膜形變元件埋置於阻斷/強 化層中。 阻斷/強化層亦可白冬你α 匕令供相同用途用的埋置加熱元件，如發表於D i M i 1 i a等人，、，^ 吴國專利號數5，1 5 5，7 4 9。最後， 具有調整構件之層可π Λ κ m « g」不馬阻斷/強化層。 圖6A顯示與.圖6所干π ^ 尸々不者相同的光罩結構，然而，在此 子中之支承底座24,爲方形而非圓形。 在另一種較佳具晋# -啦Al & ，一 、只例中，、經由將蝕刻矽晶片以製造 膜之步驟保留至已將I 从 。 壯钻射吸收材料及阻斷/強化層沈積於曲 圓上後，而改變製造光罩夕 光卓心万法。此係有利之處，由於此 等步職-般需要精確地㈣沈'積溫度，此在薄膜上很難 到。非常薄的薄膜具有極小的質量，且其較其餘的晶·圓 難維持於均勾的溫度下。因&, #在移除大部分的晶圓… 形成薄膜之蝕刻步驟之前進行此等步驟時，此步驟係在較 能維持於均勻溫度下之甚厚的基材上進行。 熟悉技藝人士由前文所説明之本發明之㈣㈣以 其進行許多修改。應將此等修·改解拜良、7 >、λ ,、， 辦样馬涵蓋於如説明於 附之申請專利範圍之本發明之範園内。 ' 例 薄 達更 以 f士 隨 ----------裝------訂-------線一. (請先閲讀背面之注意事項再填寫本頁) -14 - 本紙張尺度適用中國國家標準（CNS ) A4規格（2丨〇 X 297公釐）Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 ___ B7, f V. Description of the Invention (1) ~ " Technical Examples, This invention relates to X-ray photomasks, and especially to having good bending resistance And define a universal size mask for any desired exposure range. Invention IC (IC) technology has evolved to the point where a large number of complete circuits can be fabricated on the same semiconductor wafer using planar technology. Typically, lithography is used to incorporate circuits onto a wafer. Each circuit may include a large number of components, such as transistors, diodes, resistors, capacitors, etc., that are electrically interconnected in a preselected configuration. After the circuit components are formed on the wafer, the wafer is measured and cut into individual wafers containing the selected circuit array, further processed, and encapsulated into memory, logic, or other. Lithography is widely used to form circuit patterns on semiconductor wafers that require good resolution and high yield. Using optical stepplng technology, the pattern that is initially formed on the mask substrate can be optically transferred to the photoresist layer on the wafer using step and repeat methods. Stepping and repeating methods include moving a mask containing a pattern for a portion of the wafer to an unexposed portion of the wafer, and using electromagnetic radiation to image the mask pattern on the wafer. After the pattern is imaged, the wafer is moved and repeatedly exposed. Continue to step and repeat the lithography steps until the entire wafer is exposed. The original lithography technology used a photoresist layer on the wafer, and used ultraviolet or natural light to expose the case b on the wafer. However, the ultraviolet and natural light technologies have limitations on the degree of innovation. The final resolution obtained in the corrosion inhibitor is particularly limited by the wavelength of the incident light. Partly due to this limitation, the development of x_ray stone M for the use of ⑽ ____ _4_ ί paper size applies the Chinese National Standard (CNS) Α4 《格 （―21〇 > < 297 public works ^ — -—— ----- ----- Zhuang Yi ------ Order ------ line (please read »Notes on the back ¾ before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economy A7 B7 V. Description of the invention (The shorter wavelength of χ_ rays exposes a suitable pattern in the corrosion inhibitor. The wavelength range of rays is generally from about (^ 丨 to 1.0 nm), which can significantly improve the resolution and Yield of the circuit of each wafer. In X-ray lithography, a ray source, such as a synchrotron, is used to direct a strong parallel beam of X-rays through a ray mask over the photoresist layer of the semiconductor wafer. The photomask includes a central, χ-ray transparent area including a selected pattern formed by an X-ray absorbing material. The X-rays expose a pattern corresponding to the χ_ray absorbing material pattern in a photoresist below To form a heart-ray mask used in X-ray lithography, use-by X-ray A flat wafer formed of an opaque material, such as silicon, is used as a substrate. This substrate has the use of conventional techniques, such as diffusing an appropriate dopant into the substrate as a stop (eteh_st () p), Then, pull to the middle of the area. Bond the substrate to the support ring to provide reticle support and stability. Then use techniques such as electroplating to apply the X-ray absorbing material, such as gold, to the appropriate circuit pattern Selectively deposited on the wafer, the upper surface of the area. ^ In another specific example, a thin-speaking servant stone is nitrided or diamond HP growth, and the wafer substrate is etched to growth An X-ray absorption pattern is formed on this layer to form a thin film. For the growth layer, the thin film will be used to indicate the x-ray transparent and branched opaque pattern. ≫ η Γ-1 J ~ ray ~ w Area 0, regardless of the reason used to produce this. Dagger and <Wang Fashi Yuancheng's mask is next to the semi-conductive paper covering positive or negative effect corrosion inhibitor paper_qilangi —: —-: ---- ------ 1T ------ ^ ___ I_ ^ Please read the precautions on the back first (Write this page) A7 B7 is printed by the Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the invention (3) Bulk wafers, plus X-rays, to expose the corresponding anticorrosive pattern on the underlying semiconductor wafer. , Adjust the size of the film in the X-ray photomask to the special wafer size where the photomask is intended to be used. Therefore, the 'wafer manufacturer must have different sizes of films available for its needs.' A variety of film-containing substrates. It is extremely necessary to have a substrate that is large enough to accommodate all wafer sizes of a common or standardized film size. Some attempts have been made, but the results have been limited. The problem is that this general-size film needs to be large enough to accommodate different size patterns for different size wafers. However, the use of such a large film requires a combination of exposure ‘equipment uses a light valve (s h u 11 e 1. S) to avoid unnecessary exposure of adjacent wafers. The use of such light valves is cumbersome, requires experimental pre-exposure to determine the shielding area, and is not always completely effective in preventing at least some of the non-imaging film area and the area adjacent to the desired target area. In addition, Shao Fen's shot at the time of Bo Yue Wu Xiao's free time resulted in increased distortion of the photomask due to no shot loss. Inventing Total Cobalt According to the present invention, it proposes a x-ray photomask that has good distortion resistance and uses a large standardized size film to provide a photomask for a wafer of a desired size. This exposure mask is particularly useful in lithography ^ to expose a desired pattern in a predetermined size exposure area on a wafer, and includes: a) a parallel upper and lower surface, and a x-ray transparent film X-ray opaque substrate on the substrate; b) a layer of X-ray absorbing material on the film containing the desired pattern; and c) at least-part -6-on the upper surface of the X-ray opaque body and the upper surface of the film I ------ ^-^ —— seeds ------, 玎 ------ # * Ϊ (Please read the precautions before filling in this page), u-A7 A7 V. Description of the invention (thousands of thousands ($ X _ray blocking / enhancing layer. The first blocking, strengthening layer has a —χ_ ray transparent mask frame-shaped area that is commensurate and aligned with the desired exposure field. The first X -The ray blocking / reinforcing layer usually contains refractory metal. In a preferred junction, the substrate G includes a mesa, and the film and the first X-ray blocking / enhancing sound are both included in the mesa. The substrate is installed in a typical The above is the ring base of the Ν Τ ring. If necessary, the second blocking / reinforcing layer of the X-ray absorbing material can be used, which is the same as' can be fire resistant i | It is placed on the lower surface of the substrate. This layer also has a first frame-shaped area corresponding to the first-zaki / reinforcement layer and aligned with the x-ray transparent frame-shaped area. Brief description of the figure Top view of the reticle. Fig. 2 is a cross-sectional view of the reticle of Fig. 1 taken along the arrow 2_2. Fig. 3 is a front cross-sectional view of the reticle according to the present invention. Another specific example, a front cross-sectional view 0 FIG. 5 illustrates the distortion in the film after the substrate is mounted on the base. FIG. 6 shows a top view of yet another specific example of a photomask according to the present invention. FIG. 6 A A top view of the specific example shown in FIG. 6 is shown, in which the supporting base of the wafer is square. FIG. 7 shows a cross-section of the photomask of FIG. 6 taken along the arrow 7_7. DETAILED DESCRIPTION OF THE INVENTION In which, all the figures are similar to -7- The paper scale is applicable to the national standard (CNS) A4 specification (210X297 male) I .. I 1 ~ clothing line (please read the precautions on the back before filling (This page) Employee Consumption of Intellectual Property Bureau, Ministry of Economic Affairs A7 V. Invention description (B7 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, and the number of prints is similar. All the figures are for the purpose of illustrating the present invention, and are not schematic diagrams of actual commercial examples. Shown here is only the description of the invention, it is necessary to include these elements, and to remove the unnecessary elements that are well known in the art and send the description, to avoid clutter. A picture and two members tf typical previous Different illustrations of technical photomasks. As shown in Figures 1 and 2, X-ray photomasks constructed according to conventional techniques include X-ray opaque substrates 10, which are typically made of monocrystalline wafers or other Formed from a suitable material, ... with a top plan view of a circle on the top. The substrate "0" has substantially the upper and lower surfaces 12 and 14, respectively. It is used as the base material 10 "Yangma horse has a diameter of about 100 mm and a thickness of about 0.625 mm. However, other sizes, especially other diameter wafers can also be used." In the mask substrate process Firstly, an appropriate dopant such as boron, it 1 is rounded into the upper surface 12 and the lower surface 14. The depth of the diffusion depth in the wafer is measured and used as an etch stop in the subsequent etching step. The square central region 20 on the surface M of the crystal F 'is reactively etched through the doped' woodiness' to expose the undoped silicon. Then, the crystal is chemically etched in the undoped region by using an aqueous mixture of ethanolamine and o-phenylene difluoride. A thin stretched film is left behind. This film forms—about 2.5 micron ^ ray translucent windows, which provide an increased [rays transmitted through the substrate 1 in the window-shaped area. In this description, we will use the term χ • The ray is transparent to indicate the area where the X-ray radiation can shoot through and expose the substrate, although in some examples, the film may be only X-ray translucent. Etching and doping techniques described above @ general familiarity $ Techniques well known to wafer fabrication technologists. Therefore, there is no need to discuss these techniques further. The extension to the boron phenol domain shooter In addition ------------ t .------ IT ------. ^-( Please read the notes on the back before filling in this page) -8 This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) 5. Description of the invention (6) ^ 4 Other etching techniques familiar to those skilled in the art are also in Within the scope of the present invention. In addition, the present invention can also use other thin materials suitable for X-ray reticle use, such as carbonization attack, nitridation crushing, gemstone and so on. In the manufacturing step of the x-ray photomask, the peripheral area of the substrate 10 is bonded to a ring-shaped support ring 24 formed of glass or other suitable material. The support ring 24 is approximately 0 mm wide and 0 mm thick. And it gives the film area of the substrate 20 strength, integrity and stable tension. Although the support ring is usually circular, and it can be a NiST ring, it is also known in the art to use square or parallelogram supports, And such non-circular ones are also within the scope of the present invention. They can be published in Faure et al. The United States special ^ 1 ·! 5 tiger number 5,] 2 4, 5 6 1 type of stress balance layer is included. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs and then a layer of X-ray absorbing material 2 6 ， For example, gold, tungsten, tungsten, or other suitable X-ray absorbers are selectively deposited on the upper surface of the substrate. This deposition can be performed by conventional electroplating, or by sputtering and reduction. ( subtractl0n patterns) technology, which is also well known to those skilled in the art. For example, the technique described in sNakagawa, US Patent No. 5,8 8 1, 2 5 7 can be used selectively. Deposition X-ray absorption Material, which can reduce the deformation of the X-ray absorbing material in the X and γ directions. In any case, an X-ray absorbing material is deposited on a mask film for lithography to form a circuit pattern. Other known manufacturing techniques can be used to complete and protect the pattern on the X-ray reticle substrate, including adding a protective layer (not shown). The X-ray photomask 10 formed by Α is installed in the X-ray lithography stepper combination to expose a part of the semiconductor wafer covered with the anti-corrosion agent, for example, -9- This paper size applies Chinese national standards ( CNS) A4 specification (210X297 mm) A7 ------- B7____, V. Description of the invention (7) ~ Na 1 < agawa, US Patent No. 4, 8 8 1, 2 5 7 shown. FIG. 3 shows a photomask made according to the present invention. This photomask also contains a ray-ray opaque substrate 10 made of single crystal sand or other suitable material, and has a substantially circular top plan view. The substrate i 0 may also be a hard wafer. Using a previously published same etching technique, a part of the substrate 30 is etched away to form a substantially circular X-ray transparent film 32. However, compared to the teachings of the prior art, the size of this film does not correspond to any special exposure range for a specific size wafer I, but is large enough to accommodate multiple different size exposure ranges for different size wafers. Next, a combined X-ray blocking / thin film strengthening layer 3 4 is deposited on the film, which is a layer that is preferably a Yang-type modulus refractory metal, which substantially inhibits the passage of X-ray radiation, which is about 3 Micron thick. Useful refractory metals include, among others, Ta, TaSi, Taj, and W. The refractory metal may be deposited as a single layer or a combination of multiple layers to form a blocking / reinforcing layer 34. In addition to being a blocking layer for X-ray wheel emission, this layer can also be used as a strengthening layer to provide a strong frame to support the film to prevent distortion, especially when installed on the base ring. Using a suitable etch mask layer, in the blocking / reinforcing layer, a window 36 which is extended with the exposure range of the photomask to form a mask is etched above the film 3 2 to form a framed by the blocking / reinforcing layer. χ_ray transparent area. Of course, it is also possible to deposit the blocking / reinforcing layer on the substrate, leaving areas 36 uncovered, and generating a frame-shaped preparation area a below the X-rays that will be above the film in the blocking / reinforcing layer. The transparent area is called the first X-ray transparent mask frame area. Etching the blocking layer or sinking these layers in a way that leaves an area uncovered-10- This paper ruler applies the Chinese National Standard (CNS) A4 specification (210X297 mm) {Please read the precautions on the back first (Fill in this page). Assemble and print the i-print and the description of the invention by the Intellectual Property Bureau of the Ministry of Economic Affairs and the Consumer Cooperative (A7, B7). It is a matter for the practitioner's choice. Next, an x-ray absorbing material such as, for example, a desired exposure pattern 26 of gold, Ta, Tasl, etc. is produced on the film 32 in the frame-shaped window-like region. The well-known method is accomplished using subtractive or additive methods and materials. Figure 4 shows another specific example of the present invention. In this specific example, the material 40 includes a table 42. The substrate has substantially parallel upper and lower shapes, respectively. Surfaces 46 and 47. The tabletop 4.2 has an upper surface 48. The upper and lower ring surfaces and the surface of the tabletop are parallel planes. In one embodiment of the present invention, the substrate 40 has a diameter of about 100 mm and a thickness of about 2% meters of commercially available silicon wafers; the mesa 42 is also round and centered with the wafer and has a diameter of about 57 mm. The upper surface 48 of the mesa rises about 1 mm above the upper surface 46. However, also Other sizes, especially wafers of other diameters, can be used, and the above sizes are used to illustrate rather than limit the present invention. The technique discussed above is used again to etch the wafer through the mask to a predetermined depth on the substrate. An X-ray transparent film 5 is formed. As in the case of 3, the size of the film is not made to conform to a specific target size = a predetermined wafer, but it is made large enough to accommodate the expected maximum size. Although it is described as a square, it can also be circular or any other shape that is most suitable for the intended use. ° Next, it is placed on the table 4 2 above the surface 4 8-the χ-ray blocking layer 34, which is also preferably a high Young's modulus refractory metal. Similarly, the isolayer is typically about 3 microns thick. The base ring surface and the same ring are as strong as this ---------- Sweat -------, 玎 ------ I-, (Please read the precautions on the back before filling in this ) -11-This paper size applies the Chinese National Standard (CNS) A4 specification (210 × 297 mm) A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (9) As explained by IT, this block / The enhancement layer does not completely cover the film, but forms the first X-ray transparent mask frame-shaped region 36. This χ-ray transparent frame-shaped region is again made to correspond to the specificity achieved by the mask. The desired exposure of the wafer The size of the fan garden. The blocking / reinforcing layer surrounds and frames the transparent area again. After depositing the blocking / reinforcing layer and making the first frame-shaped area 36, the desired exposure pattern 26 is placed in the first frame again. Film on the area. As discussed earlier, mounting the substrate to a support base, such as mounting a silicon wafer to a N.S.T. or other support ring, can cause the film to produce some distortion. As shown in Fig. 5, the height "h" of the table is selected so that the film will not be skewed to any extent on its upper surface 48 that is "lower than the upper surface of the substrate". As shown in Fig. 5, 'on the film' The lowest point on the upper surface is point 49. A line 47 parallel to the surface of the substrate is shown after the wafer is mounted on the support base ring M. Point 4 9 remains above the surface 4 6. Next, refer to FIGS. 6 and 7 It illustrates yet another specific example of the present invention, wherein the photomask includes a protective surface film 67, and the thin film thereof includes a layer 56 grown on the upper surface of the countertop ^ as shown in the figure. Kuang Mingxin has a support 5 2 of the broken wafer with a mesa 5 3-part $ * silver engraved, layer 56. This etched portion defines all the expected target areas that can be profitably large when using this type of film and that exceeds the wafer size intended to be used by the mask of this support. The secret layer 56 extends over the open area 54. In the illustrated specific example, the water 5-8 system is manufactured on this thin film layer $ 6 by the subtractive method, in which the radiation receiving layer 66 is first coated on the thin film layer 56. And the migration through selection: light In the gas garden, the light-emitting absorbent layer of 6 cents, leaving the desired pattern to reach the middle of the ------------------------------, --- -----. ^ (Please read the notes on the back before filling out this page) -12- This paper size is applicable to China National Standards (CNS) * Printed by A7 B7, Employee Cooperative of the Intellectual Property Bureau of the Ministry of Public Economy , Invention description (ιυ) made the target pattern. As in the previous embodiments, this radiation absorbing layer contains materials commonly used in the art such as gold, gal, tantalum silicate, or any other material that can provide sufficient X-ray absorption to prevent exposure of radiation sensitive materials to the wafer These materials are useful and can be easily etched to produce the desired pattern. As discussed earlier and illustrated in the case of Figs. 3 and 4, a light-blocking / enhancing layer 60 having a first frame-shaped light-emitting transparent area 61 is placed on the radiation-absorbing layer 66. The first frame-shaped radiation transparent area 61 is consistent with the exposure range of the desired wafer. The photomask may further include an additional protective layer or surface film 67, such as a polymer material, formed on the radiation blocking / reinforcing layer 60 if necessary. The cover film preferably extends over the entire surface of the blocking / reinforcing layer including the transparent mask frame-shaped area 61, and it may include one or more cover film ventilation channels 6.8. If necessary, a second radiation blocking / strengthening layer 62 can also be placed under the film 56. This second blocking / enhancing layer 62 also has a second frame-shaped radiation transparent region 63 which is substantially the same as the first frame-shaped transparent region and is aligned with the first frame-shaped transparent region. This second layer can improve the blocking / enhancement of the X-ray stray radiation, and balance the employment changes on the surface film caused by the presence of the first blocking / enhancing layer 60. Layer 62 can further include Adjust the enlarged components of the pattern in the mask 6 4. These components can be piezoelectric films or actuators, which can be used to correct amplification errors, such as published in Ma 1 d ο n a d 0, U.S. Patent No. 4,9 6 4, 丨 4 5. Magnetostrictive layers can also be used for the same purpose. These layers are typically externally induced, and they can distort the film by applying stress in a controlled manner, while adjusting. 13- This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) --- -------- Choose clothes ------ '玎 ^ ----- 0 (Please read the precautions on the back before filling out this page> V. Description of the invention (11 A7 B7 Ministry of Economy Wisdom The size of the image printed by the employee's consumer cooperative of the Property Bureau. In another specific example, the film deformation element can be buried in the blocking / reinforcing layer. The blocking / reinforcing layer can also be used for the same purpose. Embedded heating elements, such as published in Di M i 1 ia et al., ^ Wu Guo Patent No. 5, 1 5 5, 7 4 9. Finally, the layer with the adjustment member can be π Λ κ m «g The blocking / strengthening layer is not shown in Fig. 6A. Fig. 6A shows the same mask structure as that in Fig. 6; however, the support base 24 in this case is square instead of circular. A better tool Jin #-啦 Al &, in one example, the process of etching a silicon wafer to make a film is retained until I has been removed. After the blocking / reinforcing layer is deposited on the curved circle, the manufacturing method of the photomask is changed. This is an advantage. Because of these steps, it is generally necessary to accurately deposit the temperature. It ’s hard to get it. Very thin film has extremely small mass, and it is harder to maintain the uniform temperature than the rest of the crystal and circle. Because & When performing these steps before, this step is performed on a very thick substrate that can be maintained at a uniform temperature. Those skilled in the art will make many modifications to the invention described by the foregoing. Many modifications should be made to this. · Resolving Bailiang, 7 >, λ ,,, and so on are included in the scope of the invention of the invention as described in the attached patent application scope. --- Installation ------ Order ------- Line one. (Please read the precautions on the back before filling this page) -14-This paper size applies to China National Standard (CNS) A4 specifications ( 2 丨 〇X 297 mm)