經濟部中央標準局貝工消費合作社印裂 Λ7 B? 五、發明説明（l ) 本發明之背景 本發明係關於一半導體裝置，尤指一半導體裝置，其 包括一具有電極的半導體元件；一具有複數個外電極和用 以將該等外電極連接至半導體元件之電極的導引線之膜電 路；以及一包括一用以提高半導體元件之來自其底表面的 輻射之散熱器和一被如此地配置以便環繞該半導體元件用 來強化膜電路之加強體的輻射組件；其中該膜電路之導引 線被連結於半導體元件的電極；介於半導體元件與膜電路 之間的連接部分被密封；以及散熱器部分被黏合連結於半 導體元件的底表面上，並且加強體部分被黏合連結於膜電 路的底表面上。 圖7A及7 B係橫斷面圖，每一個橫斷面圖顯示一相 關技術的半導體裝置，其中使用一膜電路來裝設一半導體 元件而且一輻射組件被提供來提高該半導體元件的輻射， 在這些圖形中，參考數字1表示一半導體元件：2係一配 置於該半導體元件1的周圍部分之上的電極塊：以及3係 被用來裝設該半導體元件的膜電路。膜電路3包括一絕緣 膜4 ,在其一表面（下表面）之上形成內引線5以及在其 另一表面之上形成經由開口而被連接至內引線5之表面的 焊錫球6，該焊錫球6構成半導體裝置的外電極。 內引線5的尖端被連結於半導體元件1的電極塊2 ’ 藉此該膜電路被組裝於半導體元件1，參考數字7表示一 用以密封介於半導體元件1與膜電路3之間的連接部分之 樹脂。 -I— I In - Is HI - I ^^1 > - .- -. .----1^1 (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS ) A4坑格（2丨OX297公釐） -4 - 經濟部中央標準局貝工消费合作社印裝 Λ7 ____B7 五、發明説明έ ) 參考數字8 a表示一輻射組件，其由—鋁製的散熱器 9和一與該散熱器9分開之鋁製的加強板1 〇所組成，該 散熱器9係一長方形薄片（厚度：例如〇 . 3毫米（mm )，而且該加強板10爲一使用黏合劑11而被連結於散 熱器9之表面上的薄片狀（厚度：例如〇·5毫米）長方 形框。在相關技術之半導體裝置中的輻射組件8 a藉由使 用黏合劑11來將加強板1〇黏合連結於散熱器9而被如 此地形成一整體。 半導體元件1的背面藉由黏合劑11而被黏合連結於 由加強板1 0所環繞之一部分散熱器9的表面上，然後， 膜電路3之周圍部分的背面藉由黏合劑13而被黏合連結 於加強板1 0的表面上，以此方式，輻射組件8 a被裝設 於半導體元件1。此外，在圖7 B的參考數字1 4表示一 構成部分膜電路3的外環。 但是，相關技術之半導體裝置有些問題，另一，由於 輻射組件8 a而在減小半導體裝置的輻射電阻方面有限制 。這是因爲在輻射組件8 a中，在介於散熱器9與被分開 形成··的加強板1 0之間所放置的黏合劑1 1具有熱阻，該 熱阻係極度大於用以形成該輻射組件8 a之材料，譬如像 鋁的熱阻。 第二，因爲藉由分開形成散熱器9及加強板1 0而後 藉由黏合劑1 1芣將他們互相黏合連結在一起才獲得該輻 射組件8 a，所以輻射組件8 a的構成需要許多步驟，導 致成本的增加，這成爲妨礙在半導體裝置之製造成本方面 „---^-------裝------訂 (婧先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS ) A4現格（21〇Χ：Ζ97公釐） -5- Λ7 B7 五、發明説明6 ) 降低的一項因素。 第三，因爲構成輻射組件8 a之主要部分的散熱器9 需要被做成像0·3毫米一樣的薄以便符合係薄化或重量 輕之半導體裝置的要求，而因此其容易變形，焊錫球6的 高度傾向被做成不均勻。當焊錫球6被連結於於印刷電路 板之導線膜時，這可能會造成連結失敗。 第四，當已經被組合之半導體裝置被放進回流熔爐中 以便將焊錫球6形成圓頂形狀時，從黏合樹脂1 1及密封 樹脂7所排出而進入介於半導體元件1，與輻射組件8 a 之間的間隙1 5之氣體（例如濕氣）被熱擴散，伴隨著由 於擴張張力或者密封效應被減小而可能發生介於散熱器9 與加強板10之間的黏合劑11被剝離這樣的失敗此一結 果。 本發明之槪述： 經濟部中央標準局負工消費合作社印製 (婧先閲讀背面之注意事項再填寫本頁) 本發明之目的在於提升輻射組件之輻射特性，降低輻 射組件之製作成本，藉由提高其剛性來抑制輻射組件的變 形藉以防止在介於半導體裝置的外部端子與像印刷電路板 等的其他組件之間的連接方面之變差，以及防止氣體被熱 擴展，該氣體在用以形成焊錫球形狀之回流步驟時產自用 來密封及與其性質相同之作用的樹脂中並且被累積和擴展 於介在輻射組件與半導體元件間之間的間隙中，藉以防止 氣密性由於氣體之增加的擴張壓力導致黏合劑的剝離而被 去除或減少》 本紙張尺度適用中國國家揉準（CNS ) A4礼格（210X297公釐） -6- 經濟部中央標準局貝工消费合作社印袋 Λ 7 __Β7 五、發明説明4 ) 爲了達到上面的目的，根據本發明的第一方面，有一 個半導體裝置被提供：其包括一具有電極的半導體元件； 一具有複數個外電極和用以將該等外電極連接至半導體元 件之電極的導引線之膜電路；以及一包括用以提高該半導 體元件之來自其底面的輻射之散熱器和一被如此地配置以 便環繞該半導體元件用來強化膜電路之έι強體的輻射組件 ;該加強體與散熱器被整體地形成；其中膜電路之導引線 被連結於半導體元件的電極：介於半導體元件與膜電路之 間的連接部分_被密封；以及散熱器部分被黏合連結於半導 體的底表面上，並且加強體部分被黏合連結於膜電路的底 表面上。 有了此組態，因爲輻射組件係由被彼此互相整體形成 之散熱器與加強板所構成，所以任何具有像黏合劑之大熱 阻性的材料不被放置在介於該散熱器與加強板之間，結果 ，由半導體元件所產生並且被傳送至輻射組件之散熱器的 熱被有效地輻射至外部，不僅經由該散熱器，而且也經由 該加強板，藉以使輻射特性優於相關技術之半導體裝置的 輻射特性。 因爲輻射組件係由被彼此相互整體形成之散熱器與加 強體所構成，所以有可能去除組裝該輻射組件的必要性， 這使得減少構成該輻射組件之步驟的次數並且降低其構成 成本，而因此降低半導體裝置之製造成本成爲可能。尤其 ，因爲該輻射組件能夠藉由使用透過粉末冶金製程之模鍛 晶片來模鍛金屬粉末而被顯著簡單地獲得，所以明顯地降 本紙張尺度適用中國國家標準（CNS ) Α4規格（210X297公釐） fi I -1 ί - I 1 I 11 I ·^衣. -I ! _ — - - -- (誚先閱讀背面之注意Ϋ項再填寫本頁) 經濟部中央標準局負工消費合作社印聚 Λ7 ___B? 五、發明説明) 低輻射組件之構成成本係可能的。 因爲輻射組件係由被彼此相互整體形成之散熱器與加 強體所構成，所以散熱器被加強體所強化，藉以增加該輻 射組件的剛性。於是，該輻射組件較少形變，以便防止介 於半導體的外部端子與係印刷電路板等的其他組件之間的 連接變差。 根據本發明的第二方面，有一種半導體裝置被提供， 其包括：一具有電極的半導體元件；一具有複數個外電極 和用以將該等外電極連接之半導體元件之電極的導引線之 膜電路；一包括一用以提高該半導體元件之來自其底表面 的輻射之散熱器和一被如此地配置以便環繞該半導體元件 用來強化膜電路之加強體的輻射組件，該加強體與散熱器 被整體地形成；以及被如此地形成於該輻射組件中以便將 介於輻射組件與半導體元件間之間隙連通至輻射組件之外 表面的通氣孔，其中膜電路之導引線被連結於半導體元件 的電極；介於半導體元件與膜電路之間的連接部分被密封 ;以及散熱器部分被黏合連結於半導體的底表面上，並且 加強體部分被黏合連結於膜電路的底表面上。 有了此組態，因爲自被用來當作黏合劑之樹脂所排出 而進入介於半導體元件與輻射組件之間的間隙之氣體例如 濕氣經由通氣孔而被釋放至外部，所以氣體被熱擴散於用 以成形焊錫球之回流步驟時以及半導體裝置之氣密性因爲 由於該氣體之增加的擴張壓力而導致黏合劑之剝離而被去 除或降低係不可能的。 .1— ...... - i -. j- - -I I - I i- - I'衣--- n ! --1 -- i (請先閱请背面之注意事項再填荇本頁)Printed by the Central Standards Bureau of the Ministry of Economic Affairs, Shellfish Consumer Cooperative, Λ7 B? 5. Description of the Invention (l) Background of the Invention The present invention relates to a semiconductor device, especially a semiconductor device, which includes a semiconductor element having electrodes; A plurality of external electrodes and a film circuit for guiding the external electrodes to the electrodes of the semiconductor element; and a heat sink including a semiconductor element for increasing radiation from the bottom surface of the semiconductor element, and A radiating component configured to surround a reinforcing body of the semiconductor element for reinforcing a film circuit; wherein a guide wire of the film circuit is connected to an electrode of the semiconductor element; a connection portion interposed between the semiconductor element and the film circuit is sealed; and The heat sink portion is adhesively connected to the bottom surface of the semiconductor element, and the reinforcing body portion is adhesively connected to the bottom surface of the film circuit. 7A and 7B are cross-sectional views, each of which shows a related art semiconductor device in which a film circuit is used to mount a semiconductor element and a radiation element is provided to increase the radiation of the semiconductor element, In these figures, reference numeral 1 denotes a semiconductor element: 2 is an electrode block disposed above a peripheral portion of the semiconductor element 1; and 3 is a membrane circuit used to mount the semiconductor element. The film circuit 3 includes an insulating film 4, an inner lead 5 formed on one surface (lower surface) thereof, and a solder ball 6 formed on the other surface thereof, which is connected to the surface of the inner lead 5 through an opening, the solder The ball 6 constitutes an external electrode of the semiconductor device. The tip of the inner lead 5 is connected to the electrode block 2 ′ of the semiconductor element 1, whereby the film circuit is assembled to the semiconductor element 1, and reference numeral 7 denotes a connection portion for sealing the connection between the semiconductor element 1 and the film circuit 3. The resin. -I— I In-Is HI-I ^^ 1 >-.--. .---- 1 ^ 1 (Please read the precautions on the back before filling out this page) The paper size applies to the Chinese National Standard (CNS ) A4 pit (2 丨 OX297mm) -4-Printed by the Central Standards Bureau of the Ministry of Economic Affairs and printed by the Shellfish Consumer Cooperative Λ7 ____B7 V. Description of the invention) Reference number 8 a indicates a radiation component made of an aluminum radiator 9 and an aluminum reinforcing plate 10 separated from the heat sink 9, the heat sink 9 is a rectangular sheet (thickness: for example 0.3 millimeter (mm)), and the reinforcing plate 10 is an adhesive 11 and a sheet-like (thickness: 0.5 mm) rectangular frame connected to the surface of the heat sink 9. The radiation element 8a in the semiconductor device of the related art uses the adhesive 11 to strengthen the reinforcing plate 1〇 It is bonded to the heat sink 9 so as to form a whole. The back surface of the semiconductor element 1 is bonded to the surface of a part of the heat sink 9 surrounded by the reinforcing plate 10 by an adhesive 11, and then, the film circuit 3 The back surface of the surrounding portion is bonded to the reinforcing plate 1 with an adhesive 13 On the surface, in this manner, the radiating element 8a is mounted on the semiconductor element 1. In addition, reference numeral 14 in Fig. 7B indicates an outer ring constituting a part of the film circuit 3. However, the related art semiconductor device has some problems. On the other hand, there is a limitation in reducing the radiation resistance of the semiconductor device due to the radiation component 8a. This is because in the radiation component 8a, between the heat sink 9 and the reinforcing plate 10 formed separately from the heat sink 9a The adhesive 11 placed therebetween has a thermal resistance that is extremely greater than the material used to form the radiation component 8a, such as the thermal resistance of aluminum. Second, because the heat sink 9 and the reinforcing plate are formed separately. 10 and then they are bonded to each other with an adhesive 1 1 芣 to obtain the radiating element 8 a, so the composition of the radiating element 8 a requires many steps, leading to an increase in cost, which has hindered the manufacturing cost of semiconductor devices Regarding „--- ^ ------- install ------ order (Jing first read the notes on the back and then fill out this page) This paper size is applicable to China National Standard (CNS) A4 is now standard (21〇 Χ: Z97 mm) -5- Λ7 B7 V. Hair Note 6) A factor that reduces. Third, because the heat sink 9 constituting the main part of the radiation module 8a needs to be made as thin as 0.3 mm in order to meet the requirements of a thin or lightweight semiconductor device, Because of this, it is easy to deform, and the height of the solder ball 6 tends to be made uneven. When the solder ball 6 is connected to the wiring film of the printed circuit board, this may cause the connection to fail. Fourth, when the semiconductor has been combined When the device is placed in a reflow furnace so that the solder balls 6 are formed into a dome shape, the gas is discharged from the adhesive resin 11 and the sealing resin 7 and enters the gas space 15 between the semiconductor element 1 and the radiation element 8 a. (For example, moisture) is diffused by heat, and the failure that the adhesive 11 between the heat sink 9 and the reinforcing plate 10 is peeled off may occur due to the expansion tension or the sealing effect being reduced. Description of the invention: Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs (Jing first read the notes on the back and then fill out this page) The purpose of this invention is to improve the radiation characteristics of the radiation module and reduce the manufacturing cost of the radiation module. The deformation of the radiation component is suppressed by increasing its rigidity to prevent deterioration in the connection between the external terminals of the semiconductor device and other components such as a printed circuit board, and to prevent the gas from being thermally expanded. The reflow step of forming the solder ball shape is produced in the resin used for sealing and has the same effect as the properties, and is accumulated and expanded in the gap between the radiating element and the semiconductor element, thereby preventing the airtightness from increasing due to the gas. The expansion pressure caused the peeling of the adhesive and was removed or reduced. ”This paper size is applicable to the Chinese National Standard (CNS) A4 Liege (210X297 mm)-6-Printed bags of the Shelling Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs Λ 7 __Β7 5. Description of Invention 4) In order to achieve the above object, according to the first aspect of the present invention, there is a semiconductor device Provided: It includes a semiconductor element having an electrode; a film circuit having a plurality of external electrodes and a guide wire for connecting the external electrodes to the electrodes of the semiconductor element; and a circuit including A radiating radiator on its bottom surface and a radiating component configured so as to surround the semiconductor element to strengthen the film circuit's strong body; the reinforcing body and the heat sink are integrally formed; wherein the guide line of the film circuit is Electrodes connected to the semiconductor element: the connection portion between the semiconductor element and the film circuit is sealed; and the heat sink portion is adhesively connected to the bottom surface of the semiconductor, and the reinforcing body portion is adhesively connected to the bottom surface of the film circuit on. With this configuration, because the radiation assembly is composed of a heat sink and a reinforcing plate integrally formed with each other, any material having a large thermal resistance like an adhesive is not placed between the heat sink and the reinforcing plate. As a result, the heat generated by the semiconductor element and transmitted to the heat sink of the radiating component is effectively radiated to the outside, not only through the heat sink but also through the reinforcing plate, so that the radiation characteristics are better than those of the related art. Radiation characteristics of semiconductor devices. Because the radiating element is composed of a heat sink and a reinforcing body which are integrally formed with each other, it is possible to remove the necessity of assembling the radiating element, which makes it possible to reduce the number of steps of forming the radiating element and reduce its forming cost. It becomes possible to reduce the manufacturing cost of semiconductor devices. In particular, because the radiating element can be obtained significantly by simply forging metal powder by using a die-forging wafer that passes through a powder metallurgy process, the paper size is obviously reduced to apply the Chinese National Standard (CNS) A4 specification (210X297 mm) ) Fi I -1 ί-I 1 I 11 I · ^ 衣. -I! _ —---(诮 Please read the note on the back before filling in this page) Printed by the Central Standards Bureau of the Ministry of Economic Affairs and Consumer Cooperatives Λ7 ___B? V. Description of the invention) The construction cost of low-emission components is possible. Because the radiating component is composed of a radiator and a reinforcing body integrally formed with each other, the radiator is strengthened by the reinforcing body, thereby increasing the rigidity of the radiating component. Therefore, the radiation module is less deformed in order to prevent the connection between the external terminal interposed between the semiconductor and other components such as a printed circuit board from being deteriorated. According to a second aspect of the present invention, there is provided a semiconductor device including: a semiconductor element having an electrode; and a guide wire having a plurality of external electrodes and an electrode of the semiconductor element for connecting the external electrodes. A film circuit; a radiator including a heat sink for increasing radiation from a bottom surface of the semiconductor element and a radiating component configured so as to surround the semiconductor element to strengthen a film circuit for strengthening the film circuit; The device is integrally formed; and a vent hole formed in the radiating element so as to communicate the gap between the radiating element and the semiconductor element to the outer surface of the radiating element, wherein the guide wire of the film circuit is connected to the semiconductor The electrode of the element; the connection portion between the semiconductor element and the film circuit is sealed; and the heat sink portion is adhesively connected to the bottom surface of the semiconductor, and the reinforcing body portion is adhesively connected to the bottom surface of the film circuit. With this configuration, since the gas, such as moisture, discharged from the resin used as an adhesive and entering the gap between the semiconductor element and the radiating element is released to the outside through the vent hole, the gas is heated It is impossible to remove or reduce the airtightness of the semiconductor device due to the diffusion during the reflow step for forming the solder balls and the peeling of the adhesive due to the increased expansion pressure of the gas. .1— ......-i-. J---II-I i--I 'clothing --- n! --1-i (Please read the notes on the back before filling out the transcript page)
本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐] Z A7 B7 五、發明説明（6) 附圖之簡略說明： 圖1A及圖1B係顯示本發明之半導體裝置的第一實 施例的圖形，其中圖1 A爲一平面圖ί而圖1 B爲取自斷， 1 Α之直線Β _Β上的放大橫斷面圖； 圖2係第一實施例之輻射組件的橫斷面圖： 圖3Α至圖3 Ε係顯示在圖1Α及圖1 Β中所顯示之 半導體裝置的製造方法，依其製造步驟之順序的橫斷面圖 * ， 圖4係本發明之半導體裝置的第二實施例之橫斷面圖 圖5係顯示本發明之半導體裝置被裝設於印刷電路板 上之狀態的圖形： 圖6係顯示使用本發明之半導體裝置的電子設備之圖 形；以及 圖7 Α及圖7 Β係均顯示一相關技術之半導體裝置的 橫斷面圖。 請 先 •^閲 讀 背 面 之 注 項 再 填 I裳 頁 訂 線 經濟部中央標準局員工消费合： 主要元件對照 1 2 3 半導體元件 電極塊 膜電路 絕緣膜 內引線 -9- 卜國國家標準（CNS ) A4规格（210X297公釐） Λ7 B7 五、發明说明6 ) 5a 隆起物 6 焊錫球 7 樹脂 8 輻射組件 8a 輻射組件 9 散熱器 10 加強板 11 黏合劑 13 黏合劑 14 外環 15 間隙 20 通氣孔 21 凹槽 22 凹槽 23 熱導電性黏合劑（導電膠） 24 導電膠 {請先閱讀背面之注意事項再填寫本頁) 訂 經濟部中央標準局貝工消费合作社印聚 較佳‘實施例之詳細說明： 根據第一發明之半導體裝置之特徵在於提供一由被彼 此相互整體形成之散熱器及加強體所構成的輻射組件，其 中半導體元件之電極被連結於膜電路的引線；介於半導體 元件與膜電路之間的連接部分被密封：以及散熱器被黏合 連結於半導體元件的底表面而且加強體被黏合連結於膜電 路的底表面。在該膜電路中，一絕緣層係由像聚醯亞胺或 本紙張尺度適用中國國家標準（CNS > A4規格（2丨0X297公A ) -10- 經濟部中央標準局員工消费合作社印裝 Λ7 B7 五、發明説明έ ) 環氧樹脂之樹脂所製成；內引線係由例如銅所製成：以及 外部端子係藉由鍍鎳及鍍焊錫所構成並且在回流步驟時被 形成圓頂形狀。該膜電路環繞半導體元件，並且可能具有 或者沒有用來強化及靜電屏蔽該膜電路的外環。 由被整體形成之散熱器及加強體所構成之輻射組件能 夠藉由使用透過粉末冶金製程之模鍛晶片來模鍛金屬粉末 而被獲得。 根據本發明之第二半導體裝置的特徵在於提供通氣孔 於輻射組件之中以如此的方式而使得將介於輻射組件與半 導體裝置間之間隙連通至輻射組件的外表面，該通氣孔被 提供於例如在長方形半導體元件之四個轉角的附近，而且 每一個通氣孔的直徑被設定爲一數値，例如在0.3至 1 . 0毫米的範圍之中。 於下文中，將藉由較佳實施例並參考附圖來詳細說明 本發明。 圖1 Α及圖1 Β係顯示本發明之半導體裝置之第一實 施例的橫斷面圖。在圖形中，參考數字1表示一半導體元 件；2係配置於半導體元件1之周圍部分上的電極塊，·以 及3爲使用來安裝該半導體元件1的膜電路。該膜電路3 具有一層絕緣膜4，在該絕緣膜4的一表面（下表面）上 形成有內引線5，而在其另一表面上形成有經由開口連接 至內引線5之表面的焊錫球6。該焊錫球6構成半導體裝 置的外電極，且藉由與內引線5 —起電焊而被形成拿來當 作背面層。在此實施例中實施鍍鎳，接著實施鍍焊錫來形 本紙張尺度適用中國國家標準（CNS ) A4現格（210X297公釐） -11 - (婧先閱讀背面之注意事項再填寫本頁) 袈· Λ7 __B7 五、發明説明ί ) 成具有雙層結構的焊錫球6，每一個焊錫球6具有0 . 5 毫米的高度與0·6毫米的寬度，該焊錫球6被排列而具 有例如1 . 0毫米的間距。除此之外，參考數字1 4表示 具有厚度大約1 5 0毫微米（//m)的外環。 內引線5的尖端被連結於半導體元件1的電極塊2， 藉此膜電路3被組裝於半導體元件1，參考數字7表示用 來密封連接介於半導體元件1與膜電路3間之部分的樹脂 〇 經濟部中央標準局貝工消费合作社印裂 ---„------^-— {婧先閱讀背面之注意事項再填荇本頁) 如在圖2中所顯示參考數字8表示由彼此被整體形成 之散熱器9與加強板1 0所構成的輻射組件。更特別的是 ，該輻射組件8係使用粉末冶金製程藉由將具有高傳導性 之係鋁或銅的金屬模鍛而被獲得。雖然藉由圖2中之兩點 連線來表示介於散熱器9與加強板1 0間的界線，但是如 此之界線係槪念上的，亦即，實際上並未出現，因爲該散 熱器9與加強板1 0互相被整體形成》輻射組件8之周圍 部分的厚度，亦即，散熱器9及加強板1 0的總厚度被設 定於在0.5至2.0毫米之範圍中的一個數値，加強板 1 0·的厚度被設定爲大約少於0 . 2毫米，其等於或厚於 半導體晶片1的厚度。 參考數字2 0表示在輻射組件8之散熱器9中所形成 的通氣孔，通氣孔的直徑被設定爲在0.3到1.0毫米 之範圍內的一個數値，該通氣孔2 0被形成於自長方形半 導體元件1之四個轉角稍微向外的部分中以如此之方而使 得將介於該半導體元件1與輻射組件8間之間隙15連通 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 經濟部中央標準局員工消費合作社印裝 五、發明説明<0 ) 至該輻射組件8的外表面，通氣孔2 0作用以防止在樹脂 7或與其性質相同之物內的氣體於用以成形焊錫球6之回 流步驟時被累積及擴散於間隙1 5中。 凹槽2 1形成於輻射組件2 0之散熱器9的底面部分 中，每一個凹槽2 1具有範圍在0到0 . 2毫米的深度及 0到1 . 〇毫米的間距，該凹槽2 1被形成來增加散熱器 9之底面的表面積，藉以提升其輻射特性。除此之外，參 考數字2 2表示用來指示一接腳遮罩或與其性質相同之物 的凹槽，其在深度方面和凹槽2 1是相同的，但在寬度及 形狀方面則和凹槽2 1不同。凹槽2 1及2 2使用粉末冶 金製程而與輻射組件8的晶片形成同時被形成。 半導體元件1的背面以熱導電性黏合劑（導電膠） 2 3或者黏合劑（聚烯系列的膠紙或環氧腈系列的黏合劑 ’厚度：20-100毫微米）13而被黏合連結於由加 強板1 0所環繞之散熱器9部分的表面。此時，膜電路3 之周圍部分的背面以黏合劑13而被黏合連結於加強板 1 0的正面。以此方式，輻射組件8被安裝於半導體元件 1上。在半導體元件1以熱導電性黏合劑2 3來黏合連結 於輻射組件8的情況中，黏合劑2 3作用而使介於半導體 元件1與輻射組件8之間有較小的熱阻，更特別的是，晶 片連結用銀膠被用來當作該黏合劑2 3。參考數字2 4表 示用來將外環1 4電連接至輻射組件8的導電膠，導電膠 2 4作用而使外環1 4接地且因此使得外環1 4展現靜電 隔離功能。於是，提升反無線電雜訊特性係可能的。 本紙張尺度適用中國國家標準（CNS ) A4g ( 210X297公釐） -13 - (婧先閏讀背面之注意事項再填tr本頁) 裝. 、νβ 經濟部中央標準局貝工消費合作社印装 Λ 7 __Β" 五、發明説明<1 ) 根據在此實施例中的半導體裝置，因爲輻射組件8係 由被彼此整體形成之散熱器9與加強板1 0所構成，所以 任何具有像黏合劑之大的熱阻之材料不會被放在介於散熱 器1與加強板1 0之間。結果，自半導體元件1所產生且 被傳送至輻射組件8之散熱器9的熱不僅經由散熱器9， 也經由加強板1 0而被有效地輻射至外部，藉以達成優於 習知技術半導體裝置之輻射特性的輻射特性。 因爲輻射組件8係由被彼此整體形成之散熱器（與加 強板1 0所構成，所以可能去除組裝該輻射組件8的可能 性，這使得其可能減少構成輻射組件8之步驟的次數並降 低其構成成本，且因此而降低半導體裝置的製造成本。尤 其，因爲輻射組件8能夠藉由使用透過粉末冶金製程之模 锻晶片來模锻金屬粉末而被顯著輕易地獲得，所以顯著地 降低輻射組件8之構成成本係可能的。 因爲輻射組件8係由被彼此整體形成之散熱器9與加 強板1 0所構成，所以散熱器9被加強板1 0所強化，而 藉以增加輻射組件8的剛性。於是，輻射組件8較少形變 ，以便防止由於輻射組件8的變形而導致介於半導體裝置 的外部端子與像印刷電路板的其他組件間之連接的退化。 此外，因爲用以連通介於輻射組件8及半導體元件1 間之間隙至輻射組件8之外表面的通氣孔2 0被形於輻射 組件8之內，所以自用以黏合連結，密封及與其性質相同 之作用的樹脂7及1 3所排放入間隙1 5之氣體（例如濕 氣）經由通氣孔2 0而被釋出至外部。結果，氣體被熱擴 i I ! I I - - !-.1 - - I - 1 In ! II (請先閏讀背面之注意事項再填符本頁) 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -14- 經濟部中央標準局貝工消費合作杜印製 Λ7 _五、發明説明纟2 ) 散於用以成形焊錫球6之回流步驟時並且藉由於該氣體所 增加之擴張壓力而導致黏合劑之剝離來去除或降低半導體 裝置之氣密係不可能的。 圖3 A到圖3 E係顯示在圖1 A及圖1 B中所顯示之 半導體裝置的製造方法，依其製造步驟之順序的橫斷面圖 〇 如在圖3 A中所顯示，準備一用以形成引線架的膜電 路3，在該引線架上，對應於複數個半導體裝置的引線被 整體地形成。在此步驟中，用以形成膜電路3之外部端子 的焊錫球6因被電鍍而被留下，亦即，沒有被形成球形狀 ，因他們不受到熱處理。 如在圖3 B中所顯示，在膜電路3之內引線5的頂端 處所形成之降起物5 a被連結於半導體元件1的電極塊2 ，在隆起物5 a係由鋁所製成的情況中，他們必須藉單點 連接來連結；而在隆起物5 a係由金所製成的情況中，他 們能夠藉由成組連接來共同地連結。 如在圖3 C中所顯示，半導體元件1的表面和介於半 導體元件1與膜電路3之間的連接部分係以密封樹脂來密 封。 如在圖3D中所顯示，輻射組件8(係由被彼此整體 形成之散熱器9及加強板1 0所構成）藉由黏合劑1 3及 2 3而被黏合連結於半導體元件1的底面上以及在焊錫球 被形成之部分處的膜電路3的底面上。 如在圖3 E中所顯示，焊錫球6藉由回流處理而被形 .n II . - n II - - i! I --1 1^1 —II ----—^1 (婧先閲讀背面之注意事項再填荇本頁) 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -15- 經濟部中央榡準局貝工消费合作社印袋 Λ7 ____B? 五、發明説明忉） 成爲圓頂形狀，接著將膜電路3切割成對應於半導體裝置 的元件。然後，外環1 4用導電膠2 4而被連接至輻射組 件8以便讓該外環1 4展現靜電隔絕作用，圖3 E顯示在 使用導電膠2 4之外環1 4的連接後之狀態。 雖然回流處理被實施於焊錫球6被熔化的溫度時而藉 以氣體自樹脂1 3及2 3中被排出，該氣體避免被累積及 擴展於介在半導體元件1與輻射組件8之間的間隙中。這 是因爲間隙1 5經由通氣孔2 0而被連通至輻射組件8的 外表面，且藉以氣體經由通氣孔2 0而被釋出》 圖4顯示本發明的另一實施例，在顯示於圖1 A及圖 1 B中之第一實施例的半導體裝置藉由將本發明應用於在 圖7A中所顯示之半導體裝置而被實現的同時，在此實施 例中之半導體裝置則藉由將本發明應用於在圖7 B中所顯 示之半導體裝置而被實現並且僅在半導體裝置的形態方面 而不同於在第一實施例中的半導體裝置。 圖5係顯示本發明之半導體裝置被安裝於印刷電路板 上之狀態的圖形，而圖6係使用本發明之半導體裝置的電 子設·備之示例的圖形。 其中輻射特性被改善並且輻射組件之變形被減少之上 面的半導體裝置能夠如所需地被連接至印刷電路板的電極 ，並且最適合被安裝在各種的電子設備上，譬如像在圖6 中所顯示的可攜式電話》 當本發明的較佳實施例已經使用特殊項來做說明的同 時，如此之說明祇是做例舉目的之用，並且應該了解改變 本紙張尺度適用中國國家標準（CNS > A4规格（210X297公釐） I - - I I I I- I - II 1 - I ^ .....I 1 - 1 HI - I. {請先閲讀背面之注意Ϋ項再填荇本頁) 經濟部中央標準局員工消費合作社印家 Λ7 _ B1_ 五、發明説明“） 及修正可以被達成而沒有違反本發明的精神或範疇。 {锖先閱讀背面之注意事項再填寫本頁) 裝· 訂 本紙張尺度適用中國國家標準（CNS ) A4坑格（210X297公釐）This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) Z A7 B7 V. Description of the invention (6) Brief description of the drawings: Figures 1A and 1B show the first embodiment of the semiconductor device of the present invention Fig. 1 A is a plan view and Fig. 1 B is an enlarged cross-sectional view taken on a line B_B taken from a broken line 1 A; Fig. 2 is a cross-sectional view of a radiation component of the first embodiment: FIGS. 3A to 3E are cross-sectional views showing a method of manufacturing the semiconductor device shown in FIGS. 1A and 1B according to the order of the manufacturing steps. FIG. 4 is a second embodiment of the semiconductor device of the present invention. Cross-sectional view of the example FIG. 5 is a diagram showing a state where the semiconductor device of the present invention is mounted on a printed circuit board: FIG. 6 is a diagram showing an electronic device using the semiconductor device of the present invention; and FIG. 7A and FIG. 7 Β is a cross-sectional view of a semiconductor device of related technology. Please read the note on the back and fill in the I page and the booklet. The Central Bureau of Standards of the Ministry of Economics and the Consumer Consumption: Main component comparison 1 2 3 Semiconductor component Electrode block membrane Insulation film lead-9- National Standard (CNS) A4 specification (210X297 mm) Λ7 B7 V. Invention description 6) 5a bump 6 solder ball 7 resin 8 radiation component 8a radiation component 9 radiator 10 reinforcement plate 11 Adhesive 13 Adhesive 14 Outer ring 15 Clearance 20 Ventilation hole 21 Groove 22 Groove 23 Thermally conductive adhesive (conductive adhesive) 24 Conductive adhesive {Please read the precautions on the back before filling this page) Set the central standard of the Ministry of Economic Affairs A detailed description of the preferred embodiment of the printed and printed consumer co-operative society: The semiconductor device according to the first invention is characterized by providing a radiating element composed of a heat sink and a reinforcing body integrally formed with each other. The electrodes are connected to the leads of the film circuit; the connection portion between the semiconductor element and the film circuit is sealed: and the heat sink is bonded to the bottom surface of the semiconductor element and the reinforcement is bonded to the bottom surface of the film circuit. In this membrane circuit, an insulating layer is printed by a material such as polyimide or this paper standard that applies Chinese national standards (CNS > A4 specifications (2 丨 0X297 male A)) Λ7 B7 V. Description of the invention) Made of epoxy resin; the inner leads are made of copper, for example; and the external terminals are made of nickel and solder plating and formed into a dome shape during the reflow step. . The film circuit surrounds the semiconductor element and may or may not have an outer ring to strengthen and electrostatically shield the film circuit. A radiating element composed of an integrally formed radiator and a reinforcing body can be obtained by die-forging metal powder using a die-forging wafer that passes through a powder metallurgy process. A second semiconductor device according to the present invention is characterized in that a vent hole is provided in the radiating element in such a manner that a gap between the radiating element and the semiconductor device is communicated to an outer surface of the radiating element, and the vent hole is provided in For example, in the vicinity of the four corners of a rectangular semiconductor element, and the diameter of each vent hole is set to a few millimeters, for example, in the range of 0.3 to 1.0 mm. Hereinafter, the present invention will be described in detail by means of preferred embodiments and with reference to the accompanying drawings. 1A and 1B are cross-sectional views showing a first embodiment of a semiconductor device of the present invention. In the figure, reference numeral 1 denotes a semiconductor element; 2 is an electrode block arranged on a peripheral portion of the semiconductor element 1, and 3 is a film circuit used to mount the semiconductor element 1. This film circuit 3 has an insulating film 4 on which one inner lead 5 is formed on one surface (lower surface), and a solder ball connected to the surface of the inner lead 5 via an opening is formed on the other surface thereof. 6. This solder ball 6 constitutes an external electrode of the semiconductor device, and is formed as a back layer by being electrically soldered with the inner lead 5. In this embodiment, nickel plating is performed, followed by solder plating. The paper size is applicable to China National Standard (CNS) A4 (210X297 mm) -11-(Jing first read the precautions on the back before filling this page) 袈· Λ7 __B7 V. Description of the invention)) Each of the solder balls 6 has a height of 0.5 mm and a width of 0.6 mm. The solder balls 6 are arranged to have, for example, 1. 0 mm pitch. In addition, reference numeral 14 denotes an outer ring having a thickness of about 150 nm (// m). The tip of the inner lead 5 is connected to the electrode block 2 of the semiconductor element 1, whereby the film circuit 3 is assembled to the semiconductor element 1. Reference numeral 7 denotes a resin for sealingly connecting a portion interposed between the semiconductor element 1 and the film circuit 3. 〇Printed by the Shellfish Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs --------------- ^ -— {Jing first read the precautions on the back and then fill in this page) As shown in Figure 2, the reference number 8 indicates A radiating element composed of a heat sink 9 and a reinforcing plate 10 integrally formed with each other. More specifically, the radiating element 8 uses a powder metallurgy process by die-forging a metal having a highly conductive system of aluminum or copper. It is obtained. Although the boundary line between the radiator 9 and the reinforcing plate 10 is indicated by the two-point connection in FIG. 2, such a boundary line is missed, that is, it does not actually appear. Because the heat sink 9 and the reinforcing plate 10 are integrally formed with each other, the thickness of the surrounding portion of the radiation component 8, that is, the total thickness of the heat sink 9 and the reinforcing plate 10 is set in a range of 0.5 to 2.0 mm. A number, the thickness of the reinforcing plate 1 0 · is set to approximately 0.2 mm, which is equal to or thicker than the thickness of the semiconductor wafer 1. Reference numeral 20 indicates a vent hole formed in the heat sink 9 of the radiation module 8, and the diameter of the vent hole is set to 0.3 to 1.0 mm. A number in the range, the vent hole 20 is formed in the portion slightly outward from the four corners of the rectangular semiconductor element 1 in such a way that a gap between the semiconductor element 1 and the radiation element 8 15 Connected This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) Printed by the Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs 5. Description of the invention < 0) to the outer surface of the radiation module 8 and the vent hole 2 0 It functions to prevent the gas in the resin 7 or the same property from being accumulated and diffused in the gap 15 during the reflow step for forming the solder ball 6. The groove 21 is formed in the radiator 9 of the radiation module 20 In the bottom surface portion, each groove 21 has a depth ranging from 0 to 0.2 mm and a pitch of 0 to 1.0 mm. The groove 21 is formed to increase the surface area of the bottom surface of the heat sink 9, thereby Boost its radiation In addition, the reference numeral 22 indicates a groove used to indicate a pin mask or something of the same nature, which is the same in depth as the groove 21, but in terms of width and shape. Different from the groove 2 1. The grooves 2 1 and 2 2 are formed at the same time as the wafer formation of the radiation element 8 using a powder metallurgy process. The back surface of the semiconductor element 1 is made of a thermal conductive adhesive (conductive adhesive) 2 3 or an adhesive. (Polyene-based adhesive tape or epoxy-nitrile-based adhesive 'thickness: 20-100 nm) 13 is bonded to the surface of the heat sink 9 portion surrounded by the reinforcing plate 10. At this time, the film circuit The back surface of the surrounding portion 3 is bonded to the front surface of the reinforcing plate 10 with an adhesive 13. In this manner, the radiation module 8 is mounted on the semiconductor element 1. In the case where the semiconductor element 1 is bonded and connected to the radiation element 8 with a thermally conductive adhesive 23, the adhesive 23 acts to make the thermal resistance between the semiconductor element 1 and the radiation element 8 smaller, which is more special It is said that a silver glue for wafer bonding is used as the adhesive 2 3. Reference numeral 24 indicates a conductive adhesive for electrically connecting the outer ring 14 to the radiating component 8. The conductive adhesive 24 acts to ground the outer ring 14 and thus causes the outer ring 14 to exhibit an electrostatic isolation function. Therefore, it is possible to improve anti-radio noise characteristics. This paper size applies to the Chinese National Standard (CNS) A4g (210X297 mm) -13-(Jing first read the precautions on the back and then fill in this page). Νβ Printed by the Shelling Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs Λ 7 __Β " V. Description of the invention < 1) According to the semiconductor device in this embodiment, since the radiating element 8 is composed of a heat sink 9 and a reinforcing plate 10 which are integrally formed with each other, any one having an adhesive like A material with a large thermal resistance will not be placed between the heat sink 1 and the reinforcing plate 10. As a result, the heat generated from the semiconductor element 1 and transmitted to the heat sink 9 of the radiation module 8 is effectively radiated to the outside not only through the heat sink 9 but also through the reinforcing plate 10, thereby achieving a semiconductor device superior to the conventional technology. Radiation characteristics. Since the radiation module 8 is composed of a heat sink (and a reinforcing plate 10) integrally formed with each other, the possibility of assembling the radiation module 8 may be removed, which makes it possible to reduce the number of steps of forming the radiation module 8 and reduce the number of steps The construction cost and thus the manufacturing cost of the semiconductor device are reduced. In particular, since the radiation module 8 can be remarkably easily obtained by forging metal powder by using a die forging wafer through a powder metallurgy process, the radiation module 8 is significantly reduced The construction cost is possible. Because the radiation module 8 is composed of a radiator 9 and a reinforcing plate 10 integrally formed with each other, the radiator 9 is reinforced by the reinforcing plate 10, thereby increasing the rigidity of the radiation module 8. Therefore, the radiation component 8 is less deformed in order to prevent the deterioration of the connection between the external terminal of the semiconductor device and other components like a printed circuit board due to the deformation of the radiation component 8. In addition, because it is used to communicate between the radiation component The air hole 20 between the gap between 8 and the semiconductor element 1 to the outer surface of the radiation element 8 is formed in the radiation element 8, The gas (for example, moisture) discharged into the gap 15 by the resins 7 and 13 used for adhesive bonding, sealing, and the same function as it is released to the outside through the vent hole 20. As a result, the gas is thermally expanded i I! II--!-. 1--I-1 In! II (Please read the notes on the back before filling in this page) This paper size applies to China National Standard (CNS) A4 (210X297 mm) -14- Produced by Shelley Consumer Cooperation, Central Standards Bureau, Ministry of Economic Affairs, Du printed Λ7 _V. Description of the invention 2) The adhesive was scattered during the reflow step for forming the solder ball 6 and caused by the expansion pressure of the gas. It is impossible to remove or lower the airtightness of the semiconductor device by peeling. 3A to 3E are cross-sectional views showing a method of manufacturing the semiconductor device shown in FIG. 1A and FIG. 1B in the order of the manufacturing steps. As shown in FIG. 3A, prepare a The film circuit 3 for forming a lead frame on which leads corresponding to a plurality of semiconductor devices are integrally formed. In this step, the solder balls 6 used to form the external terminals of the film circuit 3 are left because they are plated, that is, they are not formed into a ball shape because they are not subjected to heat treatment. As shown in FIG. 3B, a raised object 5a formed at the tip of the lead 5 within the membrane circuit 3 is connected to the electrode block 2 of the semiconductor element 1, and the raised object 5a is made of aluminum. In the case, they must be connected by a single point connection; in the case where the bump 5 a is made of gold, they can be connected together by group connection. As shown in Fig. 3C, the surface of the semiconductor element 1 and the connection portion between the semiconductor element 1 and the film circuit 3 are sealed with a sealing resin. As shown in FIG. 3D, the radiation component 8 (consisting of a heat sink 9 and a reinforcing plate 10 integrally formed with each other) is bonded to the bottom surface of the semiconductor element 1 by adhesives 1 3 and 2 3 And the bottom surface of the film circuit 3 at the portion where the solder ball is formed. As shown in FIG. 3E, the solder ball 6 is shaped by reflow processing. N II.-N II--i! I --1 1 ^ 1 —II ----— ^ 1 (Read first Note on the back of this page, please fill in this page again) This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) -15- Printed bags of the Shellfish Consumer Cooperative of Central Bureau of Standards of the Ministry of Economic Affairs Λ7 ____B? ) Into a dome shape, and then the film circuit 3 is cut into elements corresponding to the semiconductor device. Then, the outer ring 14 is connected to the radiation assembly 8 with a conductive adhesive 24 so that the outer ring 14 exhibits an electrostatic isolation function. FIG. 3E shows the state after the outer ring 14 is connected using the conductive adhesive 2 4 . Although the reflow process is performed at a temperature at which the solder balls 6 are melted, gas is discharged from the resins 1 3 and 23, and the gas is prevented from being accumulated and spread in the gap between the semiconductor element 1 and the radiation element 8. This is because the gap 15 is communicated to the outer surface of the radiation component 8 through the vent hole 20, and the gas is released through the vent hole 20. FIG. 4 shows another embodiment of the present invention. While the semiconductor device of the first embodiment in FIGS. 1A and 1B is implemented by applying the present invention to the semiconductor device shown in FIG. 7A, the semiconductor device in this embodiment is implemented by applying the present invention The invention is implemented by being applied to the semiconductor device shown in FIG. 7B and is different from the semiconductor device in the first embodiment only in the morphology of the semiconductor device. Fig. 5 is a diagram showing a state where the semiconductor device of the present invention is mounted on a printed circuit board, and Fig. 6 is a diagram showing an example of an electronic device / equipment using the semiconductor device of the present invention. The semiconductor device on which the radiation characteristics are improved and the deformation of the radiation component is reduced can be connected to the electrodes of the printed circuit board as required, and is most suitable for being mounted on various electronic devices, such as shown in FIG. 6 Displayed portable phone "While the preferred embodiments of the present invention have been described using special items, such descriptions are for illustration purposes only, and it should be understood that changing the dimensions of this paper applies the Chinese National Standard (CNS > A4 size (210X297mm) I--III I- I-II 1-I ^ ..... I 1-1 HI-I. {Please read the notes on the back before filling this page) Economy Ministry of Standards and Standards Bureau Employees' Consumer Cooperative Ink House Λ7 _ B1_ V. Invention Description ") and amendments can be achieved without violating the spirit or scope of the present invention. {锖 Read the precautions on the back before filling this page) Paper size applies Chinese National Standard (CNS) A4 pit (210X297 mm)