TW376569B - Method of increasing the adhesion power of Cu and dielectric layer - Google Patents

Abstract

A method of increasing the adhesion power of Cu and the dielectric layer is applicable on the production of a metal interconnect and other processes in the production of a semiconductor device. The method comprises: forming a titanium nitride on the surface of the dielectric layer (such as silicon dioxide layer) where Cu is to be covered thereon wherein the titanium nitride layer is used as the diffusion barrier layer between Cu and the dielectric layer and the formation technology thereof has become mature, forming a Ge layer on the surface of the dielectric layer, and forming a Cu layer on the surface of the Ge layer, such that the Ge layer can react with the Cu layer in high temperature in the later process to form a CuGe layer thereby increasing the adhesion power between the Cu and the dielectric layers. In the present invention, since the titanium nitride and the CuGe both are compatible in the chemical vapor deposition process and have a good trench filling power, the invented process can be used in the production of a next generation semiconductor having a smaller dimension.