KR0167610B1 - Titanium tungsten film forming method - Google Patents
Titanium tungsten film forming method Download PDFInfo
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- KR0167610B1 KR0167610B1 KR1019940035430A KR19940035430A KR0167610B1 KR 0167610 B1 KR0167610 B1 KR 0167610B1 KR 1019940035430 A KR1019940035430 A KR 1019940035430A KR 19940035430 A KR19940035430 A KR 19940035430A KR 0167610 B1 KR0167610 B1 KR 0167610B1
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Abstract
본 발명은 반도체 소자 제조공정 중 층간 원자의 확산이동을 방지하기 위한 장벽금속층 형성방법에 관한 것으로, 화학기상증착법으로 TiW막을 형성하되, 소스기체로 TiCl4, WF6및 H2기체를 사용하여 증착하는 것을 특징으로 한다.The present invention relates to a method of forming a barrier metal layer for preventing diffusion movement of interlayer atoms during a semiconductor device manufacturing process, wherein a TiW film is formed by chemical vapor deposition, but is deposited using TiCl 4 , WF 6, and H 2 gas as a source gas. Characterized in that.
Description
제 1a도 내지 제 1c도는 본 발명의 일 실시예에 따른 티타늄텅스텐막 형성 공정 단면도.1a to 1c is a cross-sectional view of the titanium tungsten film forming process according to an embodiment of the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1 : 실리콘 기판 2 : 소자분리층1 silicon substrate 2 device isolation layer
3 : 절연층 4 : 도전층3: insulation layer 4: conductive layer
5 : 평탄화절연층 6 : 티타늄텅스텐막5: planarization insulating layer 6: titanium tungsten film
7 : 배선 금속층7: wiring metal layer
본 발명은 반도체 제조 분야에 관한 것으로, 특히 반도체 소자의 접합층, 장벽금속층 등으로 사용되고 있는 티타늄텅스텐(TiW)막 형성방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the field of semiconductor manufacturing, and more particularly, to a method for forming a titanium tungsten (TiW) film used as a bonding layer, a barrier metal layer, or the like of a semiconductor device.
일반적으로, 티타늄텅스텐막은 A1이나 Cu의 장벽금속층이나 접합층으로 접합층 사용되어 왔는데, 반도체 소자 제조 기술의 발달에 따라 소자가 고집적화 되어 콘택홀이 좁고 깊어짐에 따라 스퍼터링 방법에 의한 티타늄텅스텐막의 열악한 단차피복성으로 인해 고집적 소자에 적용하는데 어려움이 있었다.In general, a titanium tungsten film has been used as a bonding layer as a barrier metal layer or a bonding layer of A1 or Cu. As the device is highly integrated with the development of semiconductor device manufacturing technology, the contact hole becomes narrower and deeper, so that the poor step of the titanium tungsten film by the sputtering method Due to the coating property, it has been difficult to apply to highly integrated devices.
또한 현재 장벽금속층으로 많이 사용되고 있는 티타늄텅스텐막은 물리기상증착(Physical Vapor Deposition, PVD) 및 화학기상증착(Chemical Vapor Deposition, CVD) 방법의 형성공정이 개발되어 있으나, 특히 Cu의 확산 방지에 충분하지 못하기 때문에 티타늄텅스텐막의 특성을 개선하기 위한 연구가 필요한 실정이다.In addition, the titanium tungsten film, which is widely used as a barrier metal layer, has been developed in the process of forming physical vapor deposition (PVD) and chemical vapor deposition (CVD), but it is not sufficient to prevent Cu diffusion. Therefore, the situation is required to improve the properties of the titanium tungsten film.
따라서, 본 발명은 우수한 단차피복성을 확보하기 위하여 반도체 소자의 티타늄텅스텐막을 화학기상증착법으로 구현하는 방법을 제공하는 것을 목적으로 한다.Accordingly, an object of the present invention is to provide a method of implementing a titanium tungsten film of a semiconductor device by chemical vapor deposition in order to ensure excellent step coverage.
상기 목적을 달성하기 위하여 본 발명은, 반도체 소자의 티타늄텅스텐막 형성방법에 있어서, 화학기상증착 반응기 내에서 TiCl4가스 WF6가스 및 H2가스를 반응시켜 티타늄텅스텐막을 증착하는 제1단계를 포함한다.In order to achieve the above object, the present invention provides a method for forming a titanium tungsten film of a semiconductor device, comprising a first step of depositing a titanium tungsten film by reacting a TiCl 4 gas WF 6 gas and H 2 gas in a chemical vapor deposition reactor. do.
이하, 본 발명의 바람직하고 용이한 실시를 위하여 그 실시예를 소개한다.Hereinafter, the embodiments of the present invention will be introduced for preferred and easy implementation.
첨부된 도면 제1a도 내지 제1c도는 본 발명의 일 실시예에 따른 티타늄텅스텐막 형성 공정 단면도로서, 이하 이를 참조하여 그 공정을 살펴본다.1A to 1C are cross-sectional views of a titanium tungsten film forming process according to an embodiment of the present invention. Hereinafter, the process will be described with reference to the drawings.
우선, 제1a도에 도시된 바와 같이 실리콘 기판(1)에 소자분리층(2), 절연층(3), 도전층(4), 평탄화절연층(5)를 차례로 형성한 다음, 평탄화절연층(5) 및 절연층(3)을 식각하여 실리콘 기판(1) 및 도전층(4)을 노출시키는 콘택홀을 형성한다.First, as shown in FIG. 1A, an isolation layer 2, an insulation layer 3, a conductive layer 4, and a planarization insulating layer 5 are sequentially formed on the silicon substrate 1, and then the planarization insulation layer is formed. (5) and the insulating layer 3 are etched to form contact holes exposing the silicon substrate 1 and the conductive layer 4.
이어서, 제1b도에 도시된 바와 같이 전체구조 상부에 장벽금속층인 티타늄텅스텐막(6)을 증착한다. 이때, 반응 가스로서 TiCl4가스, WF6가스 및 H2가스를 사용해 저압 화학기상증착(Low pressure Chemical Vapor Deposition, LPCVD) 반응기 또는 플라즈마 화학기상증착(Plasma Enhanced Chemical Vapor Deposition, PECVD) 반응기에서 증착한다.Next, as shown in FIG. 1B, a titanium tungsten film 6 serving as a barrier metal layer is deposited on the entire structure. In this case, TiCl 4 gas, WF 6 gas, and H 2 gas are used as the reaction gas, and are deposited in a low pressure chemical vapor deposition (LPCVD) reactor or a plasma enhanced chemical vapor deposition (PECVD) reactor. .
또한, 티타늄텅스텐막(6)을 증착한 다음, 반응 부산물 HF, HCl 가스에 의한 티타늄텅스텐막(6)의 오염을 방지하기 위하여, 즉 티타늄텅스텐막(6) 내의 Cl기와 F기를 탈기(degassing)시키기 위하여, 그리고 확산방지 특성을 강화시키기 위해 H2/N2튜브에서 500℃에서 1시간 정도 열처리를 실시한다.Further, after depositing the titanium tungsten film 6, in order to prevent contamination of the titanium tungsten film 6 by the reaction by-products HF and HCl gas, that is, degassing Cl and F groups in the titanium tungsten film 6. Heat treatment is performed at 500 ° C. for 1 hour in an H 2 / N 2 tube to enhance the anti-diffusion properties.
즉, 다음의 화학식(1)에 나타낸 바와같은 화학반응에 의해 TiW를 증착한다.That is, TiW is deposited by a chemical reaction as shown in the following formula (1).
LPCVD 반응기에서 티타늄텅스텐막(6)을 증착할 경우의 세부 증착조건은 다음과 같다.Detailed deposition conditions in the case of depositing the titanium tungsten film 6 in the LPCVD reactor are as follows.
a) 증착 온도 : 600∼1100℃a) Deposition temperature: 600-1100 ° C
b) 증착 압력 : 1∼1000mTorrb) Deposition pressure: 1 to 1000 mTorr
c) 반응 가스 유량 : WF6가스 5∼30sccm, TiCl4가스 1∼5mg/min, H2가스 10∼100sccmc) Reaction gas flow rate: WF 6 gas 5-30 sccm, TiCl 4 gas 1-5 mg / min, H 2 gas 10-100 sccm
d) 증착 시간 : 1∼3분d) Deposition time: 1-3 minutes
e) 증착 두께 : 100∼1000Åe) Deposition thickness: 100 to 1000Å
끝으로, 제 1C도에 도시된 바와 같이 화학기상증착된 티타늄텅스텐막(6)상에 배선금속층(7)을 증착한다.Finally, the wiring metal layer 7 is deposited on the chemical vapor deposited titanium tungsten film 6 as shown in FIG. 1C.
전술한 바와 같이 본 발명은 티타늄텅스텐막을 화학기상증착법으로 증착함으로써 후속 금속 배선 증착시의 단차피복성을 개선하고, 후속 열공정시 단차 피복성이 열악한 콘택 모서리 부분 등에서 Cu, Al 등의 원자(atom)가 실리콘기판으로 확산(diffusion)되는 현상을 방지한다. 이상에서 설명한 본 발명은 전술 실시예 및 첨부된 도면에 의해 한정되는 것이 아니라, 본 발명의 기술적 사상을 벗어나지 않는 범위 내에서 여러 가지 치환, 변형 및 변경이 가능하다는 것이 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자에게 있어 명백할 것이다.As described above, the present invention improves the step coverage of subsequent metal wiring deposition by depositing a titanium tungsten film by chemical vapor deposition, and atoms such as Cu and Al in contact edges having poor step coverage in subsequent thermal processes. Prevents diffusion into the silicon substrate. The present invention described above is not limited to the above-described embodiments and the accompanying drawings, and it is common in the art that various substitutions, modifications, and changes can be made without departing from the technical spirit of the present invention. It will be evident to those who have knowledge of.
이상에서 살펴본 바와 같이 본 발명은 층덮힘이 우수한 티타늄텅스텐막을 반도체 소자의 금속배선 공정 등에 적용하여 우수한 확산 방지 특성을 얻을 수 있으며, 이로 인하여 반도체 소자의고집적화에 기여한다.As described above, the present invention can obtain excellent diffusion preventing properties by applying the titanium tungsten film having excellent layer covering to the metallization process of the semiconductor device, thereby contributing to the high integration of the semiconductor device.
Claims (4)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019940035430A KR0167610B1 (en) | 1994-12-20 | 1994-12-20 | Titanium tungsten film forming method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019940035430A KR0167610B1 (en) | 1994-12-20 | 1994-12-20 | Titanium tungsten film forming method |
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| Publication Number | Publication Date |
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| KR0167610B1 true KR0167610B1 (en) | 1999-02-01 |
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| KR1019940035430A KR0167610B1 (en) | 1994-12-20 | 1994-12-20 | Titanium tungsten film forming method |
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1994
- 1994-12-20 KR KR1019940035430A patent/KR0167610B1/en not_active IP Right Cessation
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