TW367622B - Manufacturing method and structure for low temperature polycrystalline silicon coplanar thin film transistor - Google Patents
Manufacturing method and structure for low temperature polycrystalline silicon coplanar thin film transistorInfo
- Publication number
- TW367622B TW367622B TW085104944A TW85104944A TW367622B TW 367622 B TW367622 B TW 367622B TW 085104944 A TW085104944 A TW 085104944A TW 85104944 A TW85104944 A TW 85104944A TW 367622 B TW367622 B TW 367622B
- Authority
- TW
- Taiwan
- Prior art keywords
- thin film
- film transistor
- polycrystalline silicon
- manufacturing
- low temperature
- Prior art date
Links
Landscapes
- Thin Film Transistor (AREA)
Abstract
A kind of manufacturing method and structure for low temperature polycrystalline silicon coplanar thin film transistor which employs the laser from the back of transparent substrate to irradiate the a-Si layer in the front of transparent substrate to make it become polycrystalline silicon and activate the crud doped in source and drain of thin film transistor and save the energy and simplify the processes of coplanar thin film transistor. The temperature of all the processes should be below 400 degree C and with only once laser quenching so that the a-Si can be converted to polycrystalline silicon. The method can be used for self-aligned thin film transistor and the light doped source/drain and source/drain offset thin film transistor.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW085104944A TW367622B (en) | 1996-04-25 | 1996-04-25 | Manufacturing method and structure for low temperature polycrystalline silicon coplanar thin film transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW085104944A TW367622B (en) | 1996-04-25 | 1996-04-25 | Manufacturing method and structure for low temperature polycrystalline silicon coplanar thin film transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
TW367622B true TW367622B (en) | 1999-08-21 |
Family
ID=57941272
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW085104944A TW367622B (en) | 1996-04-25 | 1996-04-25 | Manufacturing method and structure for low temperature polycrystalline silicon coplanar thin film transistor |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW367622B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10892919B1 (en) | 2019-11-29 | 2021-01-12 | Industrial Technology Research Institute | Detector and interference cancellation method for spatial multiplexing filter bank multicarrier with offset quadrature amplitude modulation |
-
1996
- 1996-04-25 TW TW085104944A patent/TW367622B/en not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10892919B1 (en) | 2019-11-29 | 2021-01-12 | Industrial Technology Research Institute | Detector and interference cancellation method for spatial multiplexing filter bank multicarrier with offset quadrature amplitude modulation |
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