TW366567B - DRAM P-path film transistor self-alignment offset structure - Google Patents
DRAM P-path film transistor self-alignment offset structureInfo
- Publication number
- TW366567B TW366567B TW086100396A TW86100396A TW366567B TW 366567 B TW366567 B TW 366567B TW 086100396 A TW086100396 A TW 086100396A TW 86100396 A TW86100396 A TW 86100396A TW 366567 B TW366567 B TW 366567B
- Authority
- TW
- Taiwan
- Prior art keywords
- film transistor
- gate electrode
- dram
- alignment offset
- path film
- Prior art date
Links
Landscapes
- Semiconductor Memories (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
DRAM P-path film transistor self-alignment offset structure made by forming first a conventional P-path film transistor on the substrate where the substrate having an oxide layer which has a gate electrode being the transistor path located on the gate electrode, the source and drain of the transistor on both sides of the gate electrode, defining on the surface of the gate electrode offset area for forming the self-alignment offset area structure without additional process and light mask alignment steps for forming the gate electrode area.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW086100396A TW366567B (en) | 1997-01-15 | 1997-01-15 | DRAM P-path film transistor self-alignment offset structure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW086100396A TW366567B (en) | 1997-01-15 | 1997-01-15 | DRAM P-path film transistor self-alignment offset structure |
Publications (1)
Publication Number | Publication Date |
---|---|
TW366567B true TW366567B (en) | 1999-08-11 |
Family
ID=57941149
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086100396A TW366567B (en) | 1997-01-15 | 1997-01-15 | DRAM P-path film transistor self-alignment offset structure |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW366567B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7521715B2 (en) | 2004-01-12 | 2009-04-21 | Samsung Electronics Co., Ltd. | Node contact structures in semiconductor devices |
-
1997
- 1997-01-15 TW TW086100396A patent/TW366567B/en not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7521715B2 (en) | 2004-01-12 | 2009-04-21 | Samsung Electronics Co., Ltd. | Node contact structures in semiconductor devices |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |