TW366567B - DRAM P-path film transistor self-alignment offset structure - Google Patents

DRAM P-path film transistor self-alignment offset structure

Info

Publication number
TW366567B
TW366567B TW086100396A TW86100396A TW366567B TW 366567 B TW366567 B TW 366567B TW 086100396 A TW086100396 A TW 086100396A TW 86100396 A TW86100396 A TW 86100396A TW 366567 B TW366567 B TW 366567B
Authority
TW
Taiwan
Prior art keywords
film transistor
gate electrode
dram
alignment offset
path film
Prior art date
Application number
TW086100396A
Other languages
Chinese (zh)
Inventor
xiao-jia Wu
Jung-Cheng Kao
Dong-Long Zhang
Original Assignee
Promos Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Promos Technologies Inc filed Critical Promos Technologies Inc
Priority to TW086100396A priority Critical patent/TW366567B/en
Application granted granted Critical
Publication of TW366567B publication Critical patent/TW366567B/en

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  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

DRAM P-path film transistor self-alignment offset structure made by forming first a conventional P-path film transistor on the substrate where the substrate having an oxide layer which has a gate electrode being the transistor path located on the gate electrode, the source and drain of the transistor on both sides of the gate electrode, defining on the surface of the gate electrode offset area for forming the self-alignment offset area structure without additional process and light mask alignment steps for forming the gate electrode area.
TW086100396A 1997-01-15 1997-01-15 DRAM P-path film transistor self-alignment offset structure TW366567B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW086100396A TW366567B (en) 1997-01-15 1997-01-15 DRAM P-path film transistor self-alignment offset structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW086100396A TW366567B (en) 1997-01-15 1997-01-15 DRAM P-path film transistor self-alignment offset structure

Publications (1)

Publication Number Publication Date
TW366567B true TW366567B (en) 1999-08-11

Family

ID=57941149

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086100396A TW366567B (en) 1997-01-15 1997-01-15 DRAM P-path film transistor self-alignment offset structure

Country Status (1)

Country Link
TW (1) TW366567B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7521715B2 (en) 2004-01-12 2009-04-21 Samsung Electronics Co., Ltd. Node contact structures in semiconductor devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7521715B2 (en) 2004-01-12 2009-04-21 Samsung Electronics Co., Ltd. Node contact structures in semiconductor devices

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees