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Application filed by United Microelectronics CorpfiledCriticalUnited Microelectronics Corp
Priority to TW086119310ApriorityCriticalpatent/TW364206B/en
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Publication of TW364206BpublicationCriticalpatent/TW364206B/en
A method for producing cylindrical capacitor of DRAM is disclosed. It comprises etching of a self-aligned contact opening using gate electrode and silicon nitride spacer of the bit lines, in which a mask for forming a second dieletric layer hole can be omitted when a second etching step is carried out; silicon nitride layer in place of the customary oxide layer is applied on the first polysilicon layer, which requires less thickness, giving the cylindrical capacitor more shallow contact step height which facilitates the production of more compact component; further, the surface area of the capacitor is effectively increased with hemispheric silicon dies to increase the capacitance of DRAM.
TW086119310A1997-12-191997-12-19Method for producing cylindrical capacitor of DRAM
TW364206B
(en)