TW360822B - Method of making a memory fault-tolerant using a variable size redundancy replacement configuration - Google Patents

Method of making a memory fault-tolerant using a variable size redundancy replacement configuration

Info

Publication number
TW360822B
TW360822B TW086119034A TW86119034A TW360822B TW 360822 B TW360822 B TW 360822B TW 086119034 A TW086119034 A TW 086119034A TW 86119034 A TW86119034 A TW 86119034A TW 360822 B TW360822 B TW 360822B
Authority
TW
Taiwan
Prior art keywords
redundancy
variable size
memory
tolerant
elements
Prior art date
Application number
TW086119034A
Other languages
English (en)
Inventor
Kirihata Toshiaki
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US08/825,948 external-priority patent/US5831913A/en
Priority claimed from US08/825,949 external-priority patent/US5831914A/en
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of TW360822B publication Critical patent/TW360822B/zh

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70Masking faults in memories by using spares or by reconfiguring
    • G11C29/78Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/80Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
    • G11C29/804Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout to prevent clustered faults
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70Masking faults in memories by using spares or by reconfiguring
    • G11C29/78Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/80Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
    • G11C29/808Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout using a flexible replacement scheme

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Dram (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
TW086119034A 1997-03-31 1997-12-17 Method of making a memory fault-tolerant using a variable size redundancy replacement configuration TW360822B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/825,948 US5831913A (en) 1997-03-31 1997-03-31 Method of making a memory fault-tolerant using a variable size redundancy replacement configuration
US08/825,949 US5831914A (en) 1997-03-31 1997-03-31 Variable size redundancy replacement architecture to make a memory fault-tolerant

Publications (1)

Publication Number Publication Date
TW360822B true TW360822B (en) 1999-06-11

Family

ID=27124960

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086119034A TW360822B (en) 1997-03-31 1997-12-17 Method of making a memory fault-tolerant using a variable size redundancy replacement configuration

Country Status (4)

Country Link
EP (1) EP0869440B1 (zh)
KR (1) KR100295928B1 (zh)
DE (1) DE69811421T2 (zh)
TW (1) TW360822B (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009505171A (ja) * 2005-06-27 2009-02-05 イコア コーポレイション ステートフルなトランザクション指向のシステムを指定する方法、及び半導体デバイスの構造的に構成可能なイン・メモリ処理へ柔軟にマッピングする装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4639897A (en) * 1983-08-31 1987-01-27 Rca Corporation Priority encoded spare element decoder
EP0465808B1 (en) * 1990-06-19 1998-07-29 Texas Instruments Incorporated Variable size set associative DRAM redundancy scheme
EP0529330A3 (en) * 1991-07-31 1993-09-29 Texas Instruments Incorporated System with laser link decoder for dram redundancy scheme

Also Published As

Publication number Publication date
EP0869440A1 (en) 1998-10-07
DE69811421D1 (de) 2003-03-27
KR19980079738A (ko) 1998-11-25
DE69811421T2 (de) 2003-10-23
KR100295928B1 (ko) 2001-08-07
EP0869440B1 (en) 2003-02-19

Similar Documents

Publication Publication Date Title
MY134640A (en) Variable size redundancy replacement architecture to make a memory fault-tolerant
MY119794A (en) Method of making a memory fault-tolerant using a variable size redundancy replacement configuration
NL193622B (nl) Halfgeleidergeheugeninrichting met redundant blok.
IT1255932B (it) Circuito di ridondanza di riga per un dispositivo di memoria a semiconduttore.
TW200709215A (en) Method and apparatus for incorporating block redundancy in a memory array
TW200617974A (en) Programmable semi-fusible link read only memory and method of margin testing same
JPH029942U (zh)
TW200741728A (en) Repair bits for a low voltage cache
EP1221165A4 (en) CIRCUIT AND METHOD FOR A MULTIPLEX REDUNDANCY SCHEME IN A MEMORY ARRANGEMENT
WO2001097226A3 (en) Semiconductor memory having segmented row repair
TW333648B (en) The connection structure and algorithm for flash memory
EP0933709B1 (en) Repairable semiconductor intergrated circuit memory by selective assignmment of groups of redundancy elements to domains
TW358179B (en) Method for distributing banks in semiconductor memory device
GB2308693B (en) Flash memory device
MY115905A (en) Variable domain redundancy replacement configuration for a memory device
DE69606697D1 (de) Regelungssystem für Gasentladungslaser unter Verwendung mehrerer zentraler Prozessoreinheiten mit gemeinsam geteiltem Speicher und gemeinsamen Bus
TW200627477A (en) Memory device employing open bit line architecture for providing identical data topology on repaired memory cell block and method thereof
EP0892350A3 (en) Method for redundancy replacement in a memory device
EP0183323A3 (en) Method and structure for disabling and replacing defective memory in a prom device
TW200509141A (en) Semiconductor memory device
TW360822B (en) Method of making a memory fault-tolerant using a variable size redundancy replacement configuration
WO2002097820A3 (en) Pair wise programming method for dual cell eeprom
ATE220228T1 (de) Integrierte halbleiter-speichervorrichtung mit redundanzschaltungsanordnung
CN100583300C (zh) 半导体存储器件
KR20000052482A (ko) 다양한 크기를 갖는 결함구제회로

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees