DE69811421T2 - Fehlertolerante Speicher - Google Patents
Fehlertolerante SpeicherInfo
- Publication number
- DE69811421T2 DE69811421T2 DE69811421T DE69811421T DE69811421T2 DE 69811421 T2 DE69811421 T2 DE 69811421T2 DE 69811421 T DE69811421 T DE 69811421T DE 69811421 T DE69811421 T DE 69811421T DE 69811421 T2 DE69811421 T2 DE 69811421T2
- Authority
- DE
- Germany
- Prior art keywords
- fault
- tolerant memory
- tolerant
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
- G11C29/804—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout to prevent clustered faults
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
- G11C29/808—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout using a flexible replacement scheme
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Dram (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/825,949 US5831914A (en) | 1997-03-31 | 1997-03-31 | Variable size redundancy replacement architecture to make a memory fault-tolerant |
US08/825,948 US5831913A (en) | 1997-03-31 | 1997-03-31 | Method of making a memory fault-tolerant using a variable size redundancy replacement configuration |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69811421D1 DE69811421D1 (de) | 2003-03-27 |
DE69811421T2 true DE69811421T2 (de) | 2003-10-23 |
Family
ID=27124960
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69811421T Expired - Fee Related DE69811421T2 (de) | 1997-03-31 | 1998-03-23 | Fehlertolerante Speicher |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0869440B1 (de) |
KR (1) | KR100295928B1 (de) |
DE (1) | DE69811421T2 (de) |
TW (1) | TW360822B (de) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009505171A (ja) * | 2005-06-27 | 2009-02-05 | イコア コーポレイション | ステートフルなトランザクション指向のシステムを指定する方法、及び半導体デバイスの構造的に構成可能なイン・メモリ処理へ柔軟にマッピングする装置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4639897A (en) * | 1983-08-31 | 1987-01-27 | Rca Corporation | Priority encoded spare element decoder |
DE69129882T2 (de) * | 1990-06-19 | 1999-03-04 | Texas Instruments Inc | Assoziatives DRAM-Redundanzschema mit variabler Satzgrösse |
EP0529330A3 (en) * | 1991-07-31 | 1993-09-29 | Texas Instruments Incorporated | System with laser link decoder for dram redundancy scheme |
-
1997
- 1997-12-17 TW TW086119034A patent/TW360822B/zh not_active IP Right Cessation
-
1998
- 1998-02-18 KR KR1019980004984A patent/KR100295928B1/ko not_active IP Right Cessation
- 1998-03-23 EP EP98302137A patent/EP0869440B1/de not_active Expired - Lifetime
- 1998-03-23 DE DE69811421T patent/DE69811421T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR19980079738A (ko) | 1998-11-25 |
EP0869440A1 (de) | 1998-10-07 |
EP0869440B1 (de) | 2003-02-19 |
DE69811421D1 (de) | 2003-03-27 |
KR100295928B1 (ko) | 2001-08-07 |
TW360822B (en) | 1999-06-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |