TW359943B - Single body injector and method for delivering gases to a surface - Google Patents

Single body injector and method for delivering gases to a surface

Info

Publication number
TW359943B
TW359943B TW084100288A TW84100288A TW359943B TW 359943 B TW359943 B TW 359943B TW 084100288 A TW084100288 A TW 084100288A TW 84100288 A TW84100288 A TW 84100288A TW 359943 B TW359943 B TW 359943B
Authority
TW
Taiwan
Prior art keywords
single body
body injector
delivering gases
injector
elongated
Prior art date
Application number
TW084100288A
Other languages
English (en)
Inventor
Jay B Dedontney
Nicholas M Gralenski
Adam Q Miller
Original Assignee
Silicon Valley Group Thermal
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Silicon Valley Group Thermal filed Critical Silicon Valley Group Thermal
Application granted granted Critical
Publication of TW359943B publication Critical patent/TW359943B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45514—Mixing in close vicinity to the substrate
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/001—General methods for coating; Devices therefor
    • C03C17/002—General methods for coating; Devices therefor for flat glass, e.g. float glass
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519—Inert gas curtains
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45572—Cooled nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45595—Atmospheric CVD gas inlets with no enclosed reaction chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Chemical Vapour Deposition (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
  • Nozzles (AREA)
TW084100288A 1994-07-18 1995-01-13 Single body injector and method for delivering gases to a surface TW359943B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US27681594A 1994-07-18 1994-07-18

Publications (1)

Publication Number Publication Date
TW359943B true TW359943B (en) 1999-06-01

Family

ID=23058175

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084100288A TW359943B (en) 1994-07-18 1995-01-13 Single body injector and method for delivering gases to a surface

Country Status (7)

Country Link
US (2) US5683516A (zh)
EP (1) EP0697376B1 (zh)
JP (1) JP2790437B2 (zh)
KR (1) KR100190355B1 (zh)
DE (1) DE69513104T2 (zh)
HK (1) HK1011010A1 (zh)
TW (1) TW359943B (zh)

Families Citing this family (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6200389B1 (en) 1994-07-18 2001-03-13 Silicon Valley Group Thermal Systems Llc Single body injector and deposition chamber
US6022414A (en) * 1994-07-18 2000-02-08 Semiconductor Equipment Group, Llc Single body injector and method for delivering gases to a surface
US5855957A (en) * 1997-02-18 1999-01-05 Watkins-Johnson Company Optimization of SiO2 film conformality in atmospheric pressure chemical vapor deposition
US5891250A (en) * 1998-05-05 1999-04-06 Memc Electronic Materials, Inc. Injector for reactor
WO2000003058A1 (en) * 1998-07-10 2000-01-20 Ball Semiconductor, Inc. Cvd photo resist and deposition
AU3965499A (en) * 1998-07-10 2000-02-01 Silicon Valley Group Thermal Systems, Llc Chemical vapor deposition apparatus employing linear injectors for delivering gaseous chemicals and method
US6240335B1 (en) * 1998-12-14 2001-05-29 Palo Alto Technologies, Inc. Distributed control system architecture and method for a material transport system
US6736633B1 (en) 1998-12-17 2004-05-18 Corning Incorporated Burner manifold apparatus for use in a chemical vapor deposition process
JP2002532632A (ja) * 1998-12-17 2002-10-02 コーニング インコーポレイテッド 化学的気相成長プロセスに使用するためのバーナマニホールド装置
US6220286B1 (en) 1999-01-29 2001-04-24 Michael L. Davenport Gas blanket distributor
US6143080A (en) * 1999-02-02 2000-11-07 Silicon Valley Group Thermal Systems Llc Wafer processing reactor having a gas flow control system and method
US20010047756A1 (en) * 1999-05-17 2001-12-06 Bartholomew Lawrence Duane Gas distribution system
EP1212475B1 (en) 1999-05-21 2011-12-28 Aviza Technology, Inc. Protective gas shield apparatus
TW452635B (en) * 1999-05-21 2001-09-01 Silicon Valley Group Thermal Gas delivery metering tube and gas delivery metering device using the same
US6475284B1 (en) * 1999-09-20 2002-11-05 Moore Epitaxial, Inc. Gas dispersion head
US6855370B2 (en) * 2001-05-04 2005-02-15 E. I. Du Pont De Nemours And Company Fluoropolymer interlayer dielectric by chemical vapor deposition
JP2002353184A (ja) * 2001-05-28 2002-12-06 Tokyo Electron Ltd 基板処理方法及び基板処理装置
TWI287587B (en) * 2001-08-24 2007-10-01 Asml Us Inc Protective shield and system for gas distribution
TW578198B (en) 2001-08-24 2004-03-01 Asml Us Inc Atmospheric pressure wafer processing reactor having an internal pressure control system and method
US6808741B1 (en) * 2001-10-26 2004-10-26 Seagate Technology Llc In-line, pass-by method for vapor lubrication
KR20030038396A (ko) * 2001-11-01 2003-05-16 에이에스엠엘 유에스, 인코포레이티드 우선적인 화학 기상 증착 장치 및 방법
TW200402772A (en) * 2002-05-21 2004-02-16 Asml Us Inc Method of depositing an oxide film by chemical vapor deposition
AU2002310491A1 (en) * 2002-06-21 2004-01-06 E.I. Du Pont De Nemours And Company Fluoropolymer interlayer dielectric by chemical vapor deposition
US7780787B2 (en) * 2004-08-11 2010-08-24 First Solar, Inc. Apparatus and method for depositing a material on a substrate
TWI431449B (zh) * 2005-03-17 2014-03-21 Noah Prec Llc 起泡器的溫度控制裝置
US7794667B2 (en) * 2005-10-19 2010-09-14 Moore Epitaxial, Inc. Gas ring and method of processing substrates
CN101003895B (zh) * 2006-01-16 2011-10-19 中微半导体设备(上海)有限公司 一种传送反应物到基片的装置及其处理方法
WO2007106076A2 (en) * 2006-03-03 2007-09-20 Prasad Gadgil Apparatus and method for large area multi-layer atomic layer chemical vapor processing of thin films
US20100015731A1 (en) * 2007-02-20 2010-01-21 Lam Research Corporation Method of low-k dielectric film repair
US7976631B2 (en) * 2007-10-16 2011-07-12 Applied Materials, Inc. Multi-gas straight channel showerhead
US8333839B2 (en) * 2007-12-27 2012-12-18 Synos Technology, Inc. Vapor deposition reactor
US8470718B2 (en) * 2008-08-13 2013-06-25 Synos Technology, Inc. Vapor deposition reactor for forming thin film
US20100037820A1 (en) * 2008-08-13 2010-02-18 Synos Technology, Inc. Vapor Deposition Reactor
US8758512B2 (en) 2009-06-08 2014-06-24 Veeco Ald Inc. Vapor deposition reactor and method for forming thin film
DE102009042439A1 (de) * 2009-09-22 2011-03-31 Gühring Ohg Entschichtungsanlage
US20110076421A1 (en) * 2009-09-30 2011-03-31 Synos Technology, Inc. Vapor deposition reactor for forming thin film on curved surface
EP2441860A1 (en) * 2010-10-13 2012-04-18 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Apparatus and method for atomic layer deposition on a surface
US8840958B2 (en) 2011-02-14 2014-09-23 Veeco Ald Inc. Combined injection module for sequentially injecting source precursor and reactant precursor
TR201903701T4 (tr) 2011-03-23 2019-04-22 Pilkington Group Ltd İnce film kaplamaların çöktürülmesi için düzenek ve bu düzeneğin kullanılması için çöktürme usulü.
US20130068161A1 (en) * 2011-09-15 2013-03-21 Applied Materials, Inc. Gas delivery and distribution for uniform process in linear-type large-area plasma reactor
JP5403113B2 (ja) * 2012-06-15 2014-01-29 東京エレクトロン株式会社 成膜装置
KR20140038070A (ko) * 2012-09-20 2014-03-28 삼성코닝정밀소재 주식회사 가스 분사 장치 및 이에 사용되는 인젝터 파이프
JP6153401B2 (ja) * 2013-07-02 2017-06-28 株式会社ニューフレアテクノロジー 気相成長装置および気相成長方法
KR102337807B1 (ko) * 2014-11-14 2021-12-09 삼성디스플레이 주식회사 박막 증착 장치
DE102014117492A1 (de) * 2014-11-28 2016-06-02 Aixtron Se Vorrichtung zum Abscheiden einer Schicht auf einem Substrat
US10672921B2 (en) 2015-03-12 2020-06-02 Vitro Flat Glass Llc Article with transparent conductive layer and method of making the same
US11014118B2 (en) 2015-12-11 2021-05-25 Vitro Flat Glass Llc Float bath coating system
US10745804B2 (en) * 2017-01-31 2020-08-18 Ofs Fitel, Llc Parallel slit torch for making optical fiber preform
DE102018120580A1 (de) * 2018-08-23 2020-02-27 Infineon Technologies Ag Vorrichtung und verfahren zum abscheiden einer schicht bei atmosphärendruck

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE107723C (zh) *
GB1282866A (en) * 1968-08-16 1972-07-26 Pilkington Brothers Ltd Improvements in or relating to the production of glass having desired surface characteristics
DD107723A1 (zh) * 1973-12-03 1974-08-12
GB1524326A (en) * 1976-04-13 1978-09-13 Bfg Glassgroup Coating of glass
DE2638270C2 (de) * 1976-08-25 1983-01-27 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur Herstellung großflächiger, freitragender Platten aus Silicium
US4136828A (en) * 1977-06-27 1979-01-30 Corning Glass Works Oxide depositing ribbon burner
JPS5437077A (en) * 1977-08-02 1979-03-19 Agency Of Ind Science & Technol Chemical evaporation method and apparatus for same
CA1138725A (en) * 1978-07-20 1983-01-04 Robert Terneu Glass coating
US4369031A (en) * 1981-09-15 1983-01-18 Thermco Products Corporation Gas control system for chemical vapor deposition system
CH643469A5 (fr) * 1981-12-22 1984-06-15 Siv Soc Italiana Vetro Installation pour deposer en continu, sur la surface d'un substrat porte a haute temperature, une couche d'une matiere solide.
US4537795A (en) * 1982-09-16 1985-08-27 Sovonics Solar Systems Method for introducing sweep gases into a glow discharge deposition apparatus
US4499853A (en) * 1983-12-09 1985-02-19 Rca Corporation Distributor tube for CVD reactor
US5391232A (en) * 1985-12-26 1995-02-21 Canon Kabushiki Kaisha Device for forming a deposited film
US4756272A (en) * 1986-06-02 1988-07-12 Motorola, Inc. Multiple gas injection apparatus for LPCVD equipment
US5221556A (en) * 1987-06-24 1993-06-22 Epsilon Technology, Inc. Gas injectors for reaction chambers in CVD systems
US4834020A (en) 1987-12-04 1989-05-30 Watkins-Johnson Company Atmospheric pressure chemical vapor deposition apparatus
EP0322466A1 (en) 1987-12-24 1989-07-05 Ibm Deutschland Gmbh PECVD (plasma enhanced chemical vapor deposition) method for deposition of tungsten or layers containing tungsten by in situ formation of tungsten fluorides
JPH02295116A (ja) * 1989-05-10 1990-12-06 Mitsubishi Electric Corp 半導体製造装置
US5136975A (en) 1990-06-21 1992-08-11 Watkins-Johnson Company Injector and method for delivering gaseous chemicals to a surface
US5269847A (en) * 1990-08-23 1993-12-14 Applied Materials, Inc. Variable rate distribution gas flow reaction chamber
DE4029268C2 (de) * 1990-09-14 1995-07-06 Balzers Hochvakuum Verfahren zur gleichspannungs-bogenentladungs-unterstützten, reaktiven Behandlung von Gut und Vakuumbehandlungsanlage zur Durchführung
JP3057330B2 (ja) * 1991-09-27 2000-06-26 コマツ電子金属株式会社 ガス導入装置、エピタキシャル成長装置およびエピタキシャル成長方法
FR2682047B1 (fr) * 1991-10-07 1993-11-12 Commissariat A Energie Atomique Reacteur de traitement chimique en phase gazeuse.
US5393563A (en) * 1991-10-29 1995-02-28 Ellis, Jr.; Frank B. Formation of tin oxide films on glass substrates
US5328722A (en) * 1992-11-06 1994-07-12 Applied Materials, Inc. Metal chemical vapor deposition process using a shadow ring
US5453124A (en) * 1992-12-30 1995-09-26 Texas Instruments Incorporated Programmable multizone gas injector for single-wafer semiconductor processing equipment
US5456740A (en) * 1994-06-22 1995-10-10 Millipore Corporation High-efficiency metal membrane getter element and process for making
US5653808A (en) * 1996-08-07 1997-08-05 Macleish; Joseph H. Gas injection system for CVD reactors

Also Published As

Publication number Publication date
US5935647A (en) 1999-08-10
KR100190355B1 (ko) 1999-06-01
HK1011010A1 (en) 1999-07-02
EP0697376B1 (en) 1999-11-03
EP0697376A1 (en) 1996-02-21
DE69513104T2 (de) 2000-02-17
US5683516A (en) 1997-11-04
JP2790437B2 (ja) 1998-08-27
DE69513104D1 (de) 1999-12-09
JPH0864588A (ja) 1996-03-08

Similar Documents

Publication Publication Date Title
TW359943B (en) Single body injector and method for delivering gases to a surface
TW331523B (en) Nozzle assembly for an injector
EP1889817A3 (en) Single body injector
GB2158512B (en) I.c. engine injector fuel supply pipe
EP0189716A3 (en) Method and apparatus for the injection of fuel into an internal-combustion engine assisted by compressed air or gas
EP1340942A3 (en) Bluff body premixing fuel injector and method for premixing fuel and air
AU563901B2 (en) Fuel injection pump and method of adjusting the same pump
ZA985279B (en) Fuel injector nozzle with protective refractory insert
GB2322683B (en) High pressure fuel injection pipe and a method of manufacturing the same
GB9305900D0 (en) Fuel injector for the after-bumer chamber of a turbomachine
ATE168289T1 (de) Zerstäuberdüse
GB8706099D0 (en) Fuel injector nozzle
GB9502561D0 (en) Self-contained gas injector
IL75779A (en) Valve and manifold for engine compressor bore heating
GB2175992B (en) Gas turbine engine gaseous fuel injector
IT1188269B (it) Valvola di iniezione del carburante per un motore endotermico ad iniezione e a compressione d'aria
GB2216182B (en) Fuel injector with continuous air flow
GB2279406B (en) Air charging valve for an air forced fuel injector
SG43014A1 (en) Method for providing an extension on an end of an article having internal passageways
AU2829195A (en) Air assisted fuel injector with timed air pulsing
ES259132U (es) Cuerpo de construccion refractario permeable a los gases
GB2307006B (en) Fuel injector with pressure bleed-off stop
SG71892A1 (en) Plasma torch with an adjustable injector and gas analyser using such a torch
GB2307275B (en) Fuel injector nozzle
ES2147151A1 (es) Dispositivo para el tratamiento del combustible en motores termicos.

Legal Events

Date Code Title Description
MK4A Expiration of patent term of an invention patent