TW355813B - Method for manufacturing semiconductor element - Google Patents

Method for manufacturing semiconductor element

Info

Publication number
TW355813B
TW355813B TW086119414A TW86119414A TW355813B TW 355813 B TW355813 B TW 355813B TW 086119414 A TW086119414 A TW 086119414A TW 86119414 A TW86119414 A TW 86119414A TW 355813 B TW355813 B TW 355813B
Authority
TW
Taiwan
Prior art keywords
dielectric layer
manufacturing semiconductor
divider
deposit
vapor deposition
Prior art date
Application number
TW086119414A
Other languages
Chinese (zh)
Inventor
Jr-Jian Liou
Jiun-Yuan Wu
Chang-Rung Lin
Huo-Tie Lu
Shr-Wei Suen
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW086119414A priority Critical patent/TW355813B/en
Application granted granted Critical
Publication of TW355813B publication Critical patent/TW355813B/en

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  • Formation Of Insulating Films (AREA)

Abstract

A method for manufacturing semiconductor elements, including: (a) providing a base which has a base surface; (b) the said base surface having two conducting structures separated by a divider; (c) using the high-density plasma chemical vapor deposition method to deposit a first dielectric layer between the said two conducting structures and the said divider; (d) using the plasma chemical vapor deposition method to deposit a second dielectric layer on top of the said first dielectric layer; and (e) using the high-density plasma chemical vapor deposition method to deposit a third dielectric layer on top of said second dielectric layer and forming a gap within the said divider which is defined by the said second dielectric and the said third dielectric.
TW086119414A 1997-12-20 1997-12-20 Method for manufacturing semiconductor element TW355813B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW086119414A TW355813B (en) 1997-12-20 1997-12-20 Method for manufacturing semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW086119414A TW355813B (en) 1997-12-20 1997-12-20 Method for manufacturing semiconductor element

Publications (1)

Publication Number Publication Date
TW355813B true TW355813B (en) 1999-04-11

Family

ID=57940298

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086119414A TW355813B (en) 1997-12-20 1997-12-20 Method for manufacturing semiconductor element

Country Status (1)

Country Link
TW (1) TW355813B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107437529A (en) * 2017-09-05 2017-12-05 睿力集成电路有限公司 A kind of semiconductor structure and its manufacture method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107437529A (en) * 2017-09-05 2017-12-05 睿力集成电路有限公司 A kind of semiconductor structure and its manufacture method

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