TW355813B - Method for manufacturing semiconductor element - Google Patents
Method for manufacturing semiconductor elementInfo
- Publication number
- TW355813B TW355813B TW086119414A TW86119414A TW355813B TW 355813 B TW355813 B TW 355813B TW 086119414 A TW086119414 A TW 086119414A TW 86119414 A TW86119414 A TW 86119414A TW 355813 B TW355813 B TW 355813B
- Authority
- TW
- Taiwan
- Prior art keywords
- dielectric layer
- manufacturing semiconductor
- divider
- deposit
- vapor deposition
- Prior art date
Links
Landscapes
- Formation Of Insulating Films (AREA)
Abstract
A method for manufacturing semiconductor elements, including: (a) providing a base which has a base surface; (b) the said base surface having two conducting structures separated by a divider; (c) using the high-density plasma chemical vapor deposition method to deposit a first dielectric layer between the said two conducting structures and the said divider; (d) using the plasma chemical vapor deposition method to deposit a second dielectric layer on top of the said first dielectric layer; and (e) using the high-density plasma chemical vapor deposition method to deposit a third dielectric layer on top of said second dielectric layer and forming a gap within the said divider which is defined by the said second dielectric and the said third dielectric.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW086119414A TW355813B (en) | 1997-12-20 | 1997-12-20 | Method for manufacturing semiconductor element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW086119414A TW355813B (en) | 1997-12-20 | 1997-12-20 | Method for manufacturing semiconductor element |
Publications (1)
Publication Number | Publication Date |
---|---|
TW355813B true TW355813B (en) | 1999-04-11 |
Family
ID=57940298
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086119414A TW355813B (en) | 1997-12-20 | 1997-12-20 | Method for manufacturing semiconductor element |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW355813B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107437529A (en) * | 2017-09-05 | 2017-12-05 | 睿力集成电路有限公司 | A kind of semiconductor structure and its manufacture method |
-
1997
- 1997-12-20 TW TW086119414A patent/TW355813B/en not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107437529A (en) * | 2017-09-05 | 2017-12-05 | 睿力集成电路有限公司 | A kind of semiconductor structure and its manufacture method |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MK4A | Expiration of patent term of an invention patent |