TW428276B - Method for increasing the reliability of gate oxide layer - Google Patents

Method for increasing the reliability of gate oxide layer

Info

Publication number
TW428276B
TW428276B TW88100700A TW88100700A TW428276B TW 428276 B TW428276 B TW 428276B TW 88100700 A TW88100700 A TW 88100700A TW 88100700 A TW88100700 A TW 88100700A TW 428276 B TW428276 B TW 428276B
Authority
TW
Taiwan
Prior art keywords
chemical vapor
dielectric layer
reliability
increasing
gate oxide
Prior art date
Application number
TW88100700A
Other languages
Chinese (zh)
Inventor
Kuen-Jian Chen
Hung-Bo Lu
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW88100700A priority Critical patent/TW428276B/en
Application granted granted Critical
Publication of TW428276B publication Critical patent/TW428276B/en

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  • Formation Of Insulating Films (AREA)

Abstract

A method for increasing the reliability of a gate oxide layer comprises forming a dielectric layer on a substrate having at least a gate thereon; forming a metal connect on the dielectric layer; forming a pad insulation layer covering the substrate structure of the metal connect and the dielectric layer etc., in which the pad insulation layer is formed by a low pressure chemical vapor method, a normal pressure chemical vapor deposition method, or a plasma chemical vapor deposition method, etc.; and using a high density plasma chemical vapor deposition method to form an inter-metal dielectric layer on the pad insulation layer.
TW88100700A 1999-01-18 1999-01-18 Method for increasing the reliability of gate oxide layer TW428276B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW88100700A TW428276B (en) 1999-01-18 1999-01-18 Method for increasing the reliability of gate oxide layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW88100700A TW428276B (en) 1999-01-18 1999-01-18 Method for increasing the reliability of gate oxide layer

Publications (1)

Publication Number Publication Date
TW428276B true TW428276B (en) 2001-04-01

Family

ID=21639439

Family Applications (1)

Application Number Title Priority Date Filing Date
TW88100700A TW428276B (en) 1999-01-18 1999-01-18 Method for increasing the reliability of gate oxide layer

Country Status (1)

Country Link
TW (1) TW428276B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108231535A (en) * 2016-12-14 2018-06-29 台湾积体电路制造股份有限公司 The manufacturing method of semiconductor device with passivation layer

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108231535A (en) * 2016-12-14 2018-06-29 台湾积体电路制造股份有限公司 The manufacturing method of semiconductor device with passivation layer
US12002771B2 (en) 2016-12-14 2024-06-04 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device having a passivation layer and method of making

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