TW353198B - Illumination method and apparatus for the formation of micro patterns - Google Patents

Illumination method and apparatus for the formation of micro patterns

Info

Publication number
TW353198B
TW353198B TW085115071A TW85115071A TW353198B TW 353198 B TW353198 B TW 353198B TW 085115071 A TW085115071 A TW 085115071A TW 85115071 A TW85115071 A TW 85115071A TW 353198 B TW353198 B TW 353198B
Authority
TW
Taiwan
Prior art keywords
formation
illumination method
micro patterns
wafer
patterns
Prior art date
Application number
TW085115071A
Other languages
English (en)
Inventor
Seong-Ho Jeon
Sung-Muk Lee
Bae-Doo Cho
Original Assignee
Hyundai Electronics Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Ind filed Critical Hyundai Electronics Ind
Application granted granted Critical
Publication of TW353198B publication Critical patent/TW353198B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G03F7/2006—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light using coherent light; using polarised light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70125—Use of illumination settings tailored to particular mask patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70566—Polarisation control

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW085115071A 1995-12-08 1996-12-06 Illumination method and apparatus for the formation of micro patterns TW353198B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950048047A KR0171947B1 (ko) 1995-12-08 1995-12-08 반도체소자 제조를 위한 노광 방법 및 그를 이용한 노광장치

Publications (1)

Publication Number Publication Date
TW353198B true TW353198B (en) 1999-02-21

Family

ID=19438815

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085115071A TW353198B (en) 1995-12-08 1996-12-06 Illumination method and apparatus for the formation of micro patterns

Country Status (7)

Country Link
US (1) US5922513A (zh)
JP (1) JP2914927B2 (zh)
KR (1) KR0171947B1 (zh)
CN (1) CN1101007C (zh)
DE (1) DE19650722B4 (zh)
GB (1) GB2307992B (zh)
TW (1) TW353198B (zh)

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100549776B1 (ko) * 1999-07-01 2006-02-06 에이에스엠엘 네델란즈 비.브이. 공간필터링을 통한 이미지향상의 장치 및 방법
WO2001037053A1 (en) * 1999-11-15 2001-05-25 Asm Lithography B.V. Imaging method using phase boundary masking with modified illumination
KR100343140B1 (ko) * 1999-12-06 2002-07-05 윤종용 종방향 및 횡방향 패턴간의 선폭 차이에 대한 보정이가능한 노광장치 및 이에 사용되는 어퍼쳐
TW552561B (en) 2000-09-12 2003-09-11 Asml Masktools Bv Method and apparatus for fast aerial image simulation
JP4659300B2 (ja) 2000-09-13 2011-03-30 浜松ホトニクス株式会社 レーザ加工方法及び半導体チップの製造方法
TWI285295B (en) * 2001-02-23 2007-08-11 Asml Netherlands Bv Illumination optimization in lithography
CN1328002C (zh) 2002-03-12 2007-07-25 浜松光子学株式会社 加工对象物切割方法
ATE534142T1 (de) 2002-03-12 2011-12-15 Hamamatsu Photonics Kk Verfahren zum auftrennen eines substrats
TWI326626B (en) 2002-03-12 2010-07-01 Hamamatsu Photonics Kk Laser processing method
TWI520269B (zh) 2002-12-03 2016-02-01 Hamamatsu Photonics Kk Cutting method of semiconductor substrate
US6964032B2 (en) * 2003-02-28 2005-11-08 International Business Machines Corporation Pitch-based subresolution assist feature design
FR2852250B1 (fr) 2003-03-11 2009-07-24 Jean Luc Jouvin Fourreau de protection pour canule, un ensemble d'injection comportant un tel fourreau et aiguille equipee d'un tel fourreau
DE60315515T2 (de) 2003-03-12 2007-12-13 Hamamatsu Photonics K.K., Hamamatsu Laserstrahlbearbeitungsverfahren
ES2523432T3 (es) 2003-07-18 2014-11-25 Hamamatsu Photonics K.K. Chip semiconductor cortado
JP4563097B2 (ja) 2003-09-10 2010-10-13 浜松ホトニクス株式会社 半導体基板の切断方法
US7408616B2 (en) * 2003-09-26 2008-08-05 Carl Zeiss Smt Ag Microlithographic exposure method as well as a projection exposure system for carrying out the method
JP4598407B2 (ja) 2004-01-09 2010-12-15 浜松ホトニクス株式会社 レーザ加工方法及びレーザ加工装置
JP4509578B2 (ja) 2004-01-09 2010-07-21 浜松ホトニクス株式会社 レーザ加工方法及びレーザ加工装置
JP4601965B2 (ja) 2004-01-09 2010-12-22 浜松ホトニクス株式会社 レーザ加工方法及びレーザ加工装置
WO2005098916A1 (ja) 2004-03-30 2005-10-20 Hamamatsu Photonics K.K. レーザ加工方法及び半導体チップ
US7304719B2 (en) * 2004-03-31 2007-12-04 Asml Holding N.V. Patterned grid element polarizer
DE102004031688B4 (de) 2004-06-30 2006-06-14 Infineon Technologies Ag Verfahren zur Anpassung von Strukturabmessungen bei der photolithographischen Projektion eines Musters von Strukturelementen auf einen Halbleiterwafer
KR101109860B1 (ko) 2004-08-06 2012-02-21 하마마츠 포토닉스 가부시키가이샤 레이저 가공 방법, 가공 대상물 절단 방법 및 반도체 장치
US20070264581A1 (en) * 2006-05-09 2007-11-15 Schwarz Christian J Patterning masks and methods
ES2428826T3 (es) 2006-07-03 2013-11-11 Hamamatsu Photonics K.K. Procedimiento de procesamiento por láser y chip
JP5183892B2 (ja) 2006-07-03 2013-04-17 浜松ホトニクス株式会社 レーザ加工方法
JP5101073B2 (ja) 2006-10-02 2012-12-19 浜松ホトニクス株式会社 レーザ加工装置
JP4964554B2 (ja) 2006-10-03 2012-07-04 浜松ホトニクス株式会社 レーザ加工方法
JP5132911B2 (ja) 2006-10-03 2013-01-30 浜松ホトニクス株式会社 レーザ加工方法
US8735770B2 (en) 2006-10-04 2014-05-27 Hamamatsu Photonics K.K. Laser processing method for forming a modified region in an object
US7799486B2 (en) * 2006-11-21 2010-09-21 Infineon Technologies Ag Lithography masks and methods of manufacture thereof
JP5336054B2 (ja) 2007-07-18 2013-11-06 浜松ホトニクス株式会社 加工情報供給装置を備える加工情報供給システム
JP5449665B2 (ja) 2007-10-30 2014-03-19 浜松ホトニクス株式会社 レーザ加工方法
JP5134928B2 (ja) 2007-11-30 2013-01-30 浜松ホトニクス株式会社 加工対象物研削方法
JP5054496B2 (ja) 2007-11-30 2012-10-24 浜松ホトニクス株式会社 加工対象物切断方法
JP5692969B2 (ja) 2008-09-01 2015-04-01 浜松ホトニクス株式会社 収差補正方法、この収差補正方法を用いたレーザ加工方法、この収差補正方法を用いたレーザ照射方法、収差補正装置、及び、収差補正プログラム
JP5254761B2 (ja) 2008-11-28 2013-08-07 浜松ホトニクス株式会社 レーザ加工装置
JP5241527B2 (ja) 2009-01-09 2013-07-17 浜松ホトニクス株式会社 レーザ加工装置
JP5241525B2 (ja) 2009-01-09 2013-07-17 浜松ホトニクス株式会社 レーザ加工装置
KR101757937B1 (ko) 2009-02-09 2017-07-13 하마마츠 포토닉스 가부시키가이샤 가공대상물 절단방법
KR101769158B1 (ko) 2009-04-07 2017-08-17 하마마츠 포토닉스 가부시키가이샤 레이저 가공 장치 및 레이저 가공 방법
JP5491761B2 (ja) 2009-04-20 2014-05-14 浜松ホトニクス株式会社 レーザ加工装置
US8722516B2 (en) 2010-09-28 2014-05-13 Hamamatsu Photonics K.K. Laser processing method and method for manufacturing light-emitting device
CN103154818B (zh) * 2010-09-28 2015-07-15 卡尔蔡司Smt有限责任公司 微光刻投射曝光设备的光学系统以及降低图像位置误差的方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1572195A1 (de) * 1965-06-05 1970-03-26 Telefunken Patent Verfahren zur Herstellung von Mikrostrukturen kleiner Linienbreite
GB2127567B (en) * 1982-09-09 1986-01-29 Laser Applic Limited Laser marking
GB2217567A (en) * 1988-04-22 1989-11-01 David Britton Improvements in pig rearing units
JPH02232917A (ja) * 1989-03-07 1990-09-14 Toshiba Corp 半導体露光装置及び露光方法
US5053628A (en) * 1989-07-13 1991-10-01 Matsushita Electric Industrial Co., Ltd. Position signal producing apparatus for water alignment
US5078482A (en) * 1989-07-28 1992-01-07 At&T Bell Laboratories Resolution confocal microscope, and device fabrication method using same
US5004321A (en) * 1989-07-28 1991-04-02 At&T Bell Laboratories Resolution confocal microscope, and device fabrication method using same
US5541026A (en) * 1991-06-13 1996-07-30 Nikon Corporation Exposure apparatus and photo mask
JP2796005B2 (ja) * 1992-02-10 1998-09-10 三菱電機株式会社 投影露光装置及び偏光子
US5283141A (en) * 1992-03-05 1994-02-01 National Semiconductor Photolithography control system and method using latent image measurements
US5459000A (en) * 1992-10-14 1995-10-17 Canon Kabushiki Kaisha Image projection method and device manufacturing method using the image projection method
JP2698521B2 (ja) * 1992-12-14 1998-01-19 キヤノン株式会社 反射屈折型光学系及び該光学系を備える投影露光装置
US5442184A (en) * 1993-12-10 1995-08-15 Texas Instruments Incorporated System and method for semiconductor processing using polarized radiant energy
WO1995035506A2 (en) * 1994-06-17 1995-12-28 Kensington Laboratories, Inc. Scribe mark reader

Also Published As

Publication number Publication date
GB2307992A (en) 1997-06-11
JP2914927B2 (ja) 1999-07-05
KR0171947B1 (ko) 1999-03-20
DE19650722B4 (de) 2005-11-10
GB9625444D0 (en) 1997-01-22
GB2307992B (en) 2000-10-18
JPH09213627A (ja) 1997-08-15
US5922513A (en) 1999-07-13
CN1101007C (zh) 2003-02-05
CN1160228A (zh) 1997-09-24
KR970049048A (ko) 1997-07-29
DE19650722A1 (de) 1997-06-12

Similar Documents

Publication Publication Date Title
TW353198B (en) Illumination method and apparatus for the formation of micro patterns
WO2004012013A3 (en) Optical imaging using a pupil filter and coordinated illumination polarisation
TW371772B (en) High efficiency lamp apparatus for producing a beam of polarized light
EP0400408A3 (de) Verfahren zur Ausrichtung zweier Lichtwellenleiter-Faserenden und Einrichtung zur Durchführung des Verfahrens
WO1998014828A3 (en) Image projection system
TW200520048A (en) Projection exposure device, exposure method and device manufacturing method
EP0740178A3 (en) Improvements relating to illumination optics for light modulator
TW201614715A (en) Exposure apparatus, exposure method, and method for producing device
EP1063555A3 (en) Polarization luminaire and projector using it
DK0699104T3 (da) Fremgangsmåde til underkritisk tørring af aerogeler
AU3980699A (en) Polarizer apparatus for producing a generally polarized beam of light
AU4071299A (en) Polarizer apparatus for producing a generally polarized beam of light
WO2005078522A3 (en) Illumination system for a microlithographic projection exposure apparatus
EP1049590A4 (en) PROCESS FOR VERIFYING THE AUTHENTICITY OF A SECURITY DOCUMENT AND A DOCUMENT SUITABLE FOR THIS PROCESS
EP0857986A4 (en) OPTICAL DEVICE, DEVICE FOR LIGHTING WITH POLARIZED LIGHT AND PROJECTION DISPLAY
EP0460241A4 (en) Optical apparatus for generating polarized light
CA2403080A1 (en) Method and apparatus for producing a marking on an ophthalmic lens having a low surface energy
TW200507055A (en) Polarized cancellation element, illumination device, exposure device, and exposure method
EP0456427A3 (en) Polarization converting apparatus and optical instrument having the same
CA2316957A1 (en) Diamond or gemstone marking by plurality of grooves
EP1170635A3 (en) Lithographic apparatus, device manufacturing method, and device manufactured thereby
WO2002017018A3 (de) Projektionsanordnung zum projizieren eines bildes auf eine projektionsfläche und projektionseinheit zum ankoppeln an einen projektor
EP1359453A3 (de) Anordnung und Verfahren zum polarisationsoptischen Interferenzkontrast
TW341744B (en) Process for imaging points of a video picture and associated apparatus
WO2002080578A3 (en) System for adjusting the color of a light source

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees