TW351016B - Manufacturing method of capacitor of D-RAMs - Google Patents
Manufacturing method of capacitor of D-RAMsInfo
- Publication number
- TW351016B TW351016B TW086117700A TW86117700A TW351016B TW 351016 B TW351016 B TW 351016B TW 086117700 A TW086117700 A TW 086117700A TW 86117700 A TW86117700 A TW 86117700A TW 351016 B TW351016 B TW 351016B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- forming
- oxidized layer
- oxidized
- transistor
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 229920001296 polysiloxane Polymers 0.000 abstract 9
- 239000011248 coating agent Substances 0.000 abstract 7
- 238000000576 coating method Methods 0.000 abstract 7
- 150000004767 nitrides Chemical class 0.000 abstract 6
- 238000005530 etching Methods 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
- H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW086117700A TW351016B (en) | 1997-11-25 | 1997-11-25 | Manufacturing method of capacitor of D-RAMs |
| US09/006,225 US5854106A (en) | 1997-11-25 | 1998-01-12 | Method of forming a data storage capacitor with a wide electrode area for dynamic random access memory |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW086117700A TW351016B (en) | 1997-11-25 | 1997-11-25 | Manufacturing method of capacitor of D-RAMs |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW351016B true TW351016B (en) | 1999-01-21 |
Family
ID=21627296
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW086117700A TW351016B (en) | 1997-11-25 | 1997-11-25 | Manufacturing method of capacitor of D-RAMs |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US5854106A (zh) |
| TW (1) | TW351016B (zh) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6069077A (en) * | 1997-07-07 | 2000-05-30 | Vanguard International Semiconductor Corporation | UV resist curing as an indirect means to increase SiN corner selectivity on self-aligned contact etching process |
| TW345741B (en) * | 1997-11-25 | 1998-11-21 | United Microelectronics Corp | Process for producing a capacitor for DRAM |
| TW357457B (en) * | 1998-02-21 | 1999-05-01 | United Microelectronics Corp | Manufacturing method for DRAM capacitors |
| US6043131A (en) * | 1998-03-12 | 2000-03-28 | Worldwide Semiconductor Manufacturing Corporation | Method for making a flower shaped DRAM capacitor |
| KR100293713B1 (ko) | 1998-12-22 | 2001-07-12 | 박종섭 | 메모리소자의 커패시터 제조방법 |
| KR100326269B1 (ko) * | 1998-12-24 | 2002-05-09 | 박종섭 | 반도체소자의고유전체캐패시터제조방법 |
| US6168989B1 (en) * | 1999-05-26 | 2001-01-02 | Taiwan Semiconductor Manufacturing Company | Process for making new and improved crown-shaped capacitors on dynamic random access memory cells |
| KR100307533B1 (ko) * | 1999-09-03 | 2001-11-05 | 김영환 | 디램셀 제조 방법 |
| US6455371B1 (en) * | 2001-02-15 | 2002-09-24 | United Microelectronics Corp. | Method for forming capacitor of a DRAM having a wall protection structure |
| US6656844B1 (en) | 2001-10-18 | 2003-12-02 | Taiwan Semiconductor Manufacturing Company | Method of forming a protected crown capacitor structure utilizing the outside crown surface to increase capacitance |
| KR100499175B1 (ko) * | 2003-09-01 | 2005-07-01 | 삼성전자주식회사 | 반도체 장치 및 이의 제조 방법 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR0180779B1 (ko) * | 1995-02-27 | 1999-03-20 | 김주용 | 반도체소자의 캐패시터 제조방법 |
| US5508223A (en) * | 1995-05-05 | 1996-04-16 | Vanguard International Semiconductor Corporation | Method for manufacturing DRAM cell with fork-shaped capacitor |
-
1997
- 1997-11-25 TW TW086117700A patent/TW351016B/zh active
-
1998
- 1998-01-12 US US09/006,225 patent/US5854106A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US5854106A (en) | 1998-12-29 |
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