TW348314B - Semiconductor integrated circuit device and process for producing the same - Google Patents

Semiconductor integrated circuit device and process for producing the same

Info

Publication number
TW348314B
TW348314B TW086108464A TW86108464A TW348314B TW 348314 B TW348314 B TW 348314B TW 086108464 A TW086108464 A TW 086108464A TW 86108464 A TW86108464 A TW 86108464A TW 348314 B TW348314 B TW 348314B
Authority
TW
Taiwan
Prior art keywords
insulation film
driving misfet
semiconductor
integrated circuit
circuit device
Prior art date
Application number
TW086108464A
Other languages
Chinese (zh)
Inventor
Yutaka Hoshino
Shuji Ikeda
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Application granted granted Critical
Publication of TW348314B publication Critical patent/TW348314B/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H10B10/125—Static random access memory [SRAM] devices comprising a MOSFET load element the MOSFET being a thin film transistor [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/15—Static random access memory [SRAM] devices comprising a resistor load element

Landscapes

  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)

Abstract

A semiconductor integrated circuit device having a memory cell, the memory cell (MC) having: first and second driving MISFET, and first and second load elements; the source and drain regions of the driving MISFET being formed in the semiconductor substrate; the gate of the driving MISFET being formed on the main face of the semiconductor substrate through a gate insulation film; the gate upper part of the driving MISFET being formed with a first insulation film having a planarized surface and being used for covering the main face of the semiconductor substrate; the planar part of the first insulation film being formed with the load elements; the first insulation film thereon being formed with a first semiconductor film which is electrically connected to the load elements; the first semiconductor film connected to the first load element being electrically connected to the drain region of the first driving MISFET through a first connection hole formed by the first insulation film; the first semiconductor film connected to the second load element being electrically connected to the drain region of the second driving MISFET through a second connection hole formed by the first insulation film.
TW086108464A 1996-06-24 1997-06-17 Semiconductor integrated circuit device and process for producing the same TW348314B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8163493A JPH1012749A (en) 1996-06-24 1996-06-24 Semiconductor integrated circuit device and its manufacture

Publications (1)

Publication Number Publication Date
TW348314B true TW348314B (en) 1998-12-21

Family

ID=15774919

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086108464A TW348314B (en) 1996-06-24 1997-06-17 Semiconductor integrated circuit device and process for producing the same

Country Status (3)

Country Link
JP (1) JPH1012749A (en)
KR (1) KR980000624A (en)
TW (1) TW348314B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI402024B (en) * 2009-03-16 2013-07-11 Ho E Screw & Hardware Co Ltd Locating telescopic parts

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4697159B2 (en) * 2004-12-14 2011-06-08 セイコーエプソン株式会社 Electrostatic actuator, droplet discharge head and method for manufacturing the same, droplet discharge apparatus and device
JP5267524B2 (en) * 2004-12-14 2013-08-21 セイコーエプソン株式会社 Tunable filter
KR100830381B1 (en) * 2005-09-15 2008-05-20 세이코 엡슨 가부시키가이샤 Electro-optical device and manufacturing method thereof, electronic apparatus, and capacitor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI402024B (en) * 2009-03-16 2013-07-11 Ho E Screw & Hardware Co Ltd Locating telescopic parts

Also Published As

Publication number Publication date
JPH1012749A (en) 1998-01-16
KR980000624A (en) 1998-03-30

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