TW347484B - Phase shift mask and method for manufacturing the same - Google Patents
Phase shift mask and method for manufacturing the sameInfo
- Publication number
- TW347484B TW347484B TW086105551A TW86105551A TW347484B TW 347484 B TW347484 B TW 347484B TW 086105551 A TW086105551 A TW 086105551A TW 86105551 A TW86105551 A TW 86105551A TW 347484 B TW347484 B TW 347484B
- Authority
- TW
- Taiwan
- Prior art keywords
- phase shift
- shift mask
- manufacturing
- same
- region
- Prior art date
Links
- 230000010363 phase shift Effects 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/29—Rim PSM or outrigger PSM; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960025926A KR100219485B1 (ko) | 1996-06-29 | 1996-06-29 | 위상반전 마스크 및 그 제조방법 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW347484B true TW347484B (en) | 1998-12-11 |
Family
ID=19464815
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086105551A TW347484B (en) | 1996-06-29 | 1997-04-28 | Phase shift mask and method for manufacturing the same |
Country Status (4)
Country | Link |
---|---|
US (1) | US5814424A (zh) |
JP (1) | JP3998756B2 (zh) |
KR (1) | KR100219485B1 (zh) |
TW (1) | TW347484B (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100429860B1 (ko) * | 1997-05-27 | 2004-06-16 | 삼성전자주식회사 | 교번형 위상반전 마스크 및 그 제조방법 |
KR100393230B1 (ko) * | 2001-08-16 | 2003-07-31 | 삼성전자주식회사 | 잔막율을 조절할 수 있는 포토레지스트 패턴의 형성방법 |
JP2003114514A (ja) * | 2001-10-02 | 2003-04-18 | Sharp Corp | マスクを用いたパターンの転写方法、ハーフトーンマスク、及びその製造方法、並びに回路基板の製造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04269750A (ja) * | 1990-12-05 | 1992-09-25 | American Teleph & Telegr Co <Att> | 離隔特徴をフォトレジスト層に印刷する方法 |
US5418095A (en) * | 1993-01-21 | 1995-05-23 | Sematech, Inc. | Method of fabricating phase shifters with absorbing/attenuating sidewalls using an additive process |
KR0151427B1 (ko) * | 1994-03-04 | 1999-02-18 | 문정환 | 위상 반전마스크 및 그의 제조방법 |
-
1996
- 1996-06-29 KR KR1019960025926A patent/KR100219485B1/ko not_active IP Right Cessation
-
1997
- 1997-04-28 TW TW086105551A patent/TW347484B/zh not_active IP Right Cessation
- 1997-06-05 US US08/869,559 patent/US5814424A/en not_active Expired - Lifetime
- 1997-06-19 JP JP16251297A patent/JP3998756B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP3998756B2 (ja) | 2007-10-31 |
KR980005324A (ko) | 1998-03-30 |
JPH1069061A (ja) | 1998-03-10 |
US5814424A (en) | 1998-09-29 |
KR100219485B1 (ko) | 1999-09-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |