TW344868B - Process for using silicate glass as silicon integrated circuit doping - Google Patents

Abstract

A process of using a silicate glass (SG) as a silicon integrated circuit doping, which is applicable on a silicon integrated circuit device having a gate oxide and a gate region on a silicon substrate, the process comprising the following steps: (a) exposing a surface of the silicon substrate where a doping is to be carrying out; (b) forming a doped SG layer on the exposed surface of the silicon substrate and the periphery of the gate region; (c) carrying out a thermal diffusion procedure thereby doping and forming a shallow junction region below the surface of the silicon substrate not covered by the gate region; and (d) carrying out an oxidation procedure thereby forming a drive-in stopping oxidation layer at the interfaces between the SG layer and the exposed silicon substrate and the gate region in order to ensure that the shallow junction region will not be affected by the following processes.