JPS642362A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS642362A
JPS642362A JP15828387A JP15828387A JPS642362A JP S642362 A JPS642362 A JP S642362A JP 15828387 A JP15828387 A JP 15828387A JP 15828387 A JP15828387 A JP 15828387A JP S642362 A JPS642362 A JP S642362A
Authority
JP
Japan
Prior art keywords
mask
film
substrate
onto
masks
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15828387A
Other languages
Japanese (ja)
Other versions
JPH012362A (en
Inventor
Tatsuya Deguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15828387A priority Critical patent/JPS642362A/en
Publication of JPH012362A publication Critical patent/JPH012362A/en
Publication of JPS642362A publication Critical patent/JPS642362A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To improve the degree of integration of a semiconductor device without considering the allowance of the positional displacement of a bipolar MOS transistor, etc., by using a laminating mask consisting of first and second masks, utilizing side etching, and forming a field insulating film, an impurity region and an electrode by applying a one-time process.
CONSTITUTION: A mask pattern in which first and second masks 45, 46 are laminated is shaped onto an silicon substrate 41 for a bipolar transistor, and a field insulating film 47 is formed onto an exposed surface, employing the mask pattern as a protective film. The mask 45 is side-etched, using a mask 46 as a protective film, and a first conductive film 48 is applied onto a top face including the etching section. The mask 46 is removed, boron is diffused to the substrate 41 brought into contact through the film 48 and the substrate is changed into a p type, and external base regions 49 are shaped into a collector region 44 through thermal diffusion while an SiO2 film 50 is formed. A second conductive film 53 is formed to a section from which the mask 45 is gotten rid of.
COPYRIGHT: (C)1989,JPO&Japio
JP15828387A 1987-06-24 1987-06-24 Manufacture of semiconductor device Pending JPS642362A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15828387A JPS642362A (en) 1987-06-24 1987-06-24 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15828387A JPS642362A (en) 1987-06-24 1987-06-24 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPH012362A JPH012362A (en) 1989-01-06
JPS642362A true JPS642362A (en) 1989-01-06

Family

ID=15668212

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15828387A Pending JPS642362A (en) 1987-06-24 1987-06-24 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS642362A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0463165A1 (en) * 1989-09-09 1992-01-02 OHMI, Tadahiro Device and method of manufacturing the same; and semiconductor device and method of manufacturing the same
US5376564A (en) * 1993-04-01 1994-12-27 Nec Corporation Method of manufacturing a bipolar transistor having a decreased collector-base capacitance

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0463165A1 (en) * 1989-09-09 1992-01-02 OHMI, Tadahiro Device and method of manufacturing the same; and semiconductor device and method of manufacturing the same
US5854097A (en) * 1989-09-09 1998-12-29 Canon Kabushiki Kaisha Method of manufacturing a semiconductor device
EP0463165B1 (en) * 1989-09-09 2002-12-04 OHMI, Tadahiro Method for producing a semiconductor device comprising a conductive layer
US5376564A (en) * 1993-04-01 1994-12-27 Nec Corporation Method of manufacturing a bipolar transistor having a decreased collector-base capacitance

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