TW340527U - Decompression container - Google Patents

Decompression container

Info

Publication number
TW340527U
TW340527U TW085202651U TW85202651U TW340527U TW 340527 U TW340527 U TW 340527U TW 085202651 U TW085202651 U TW 085202651U TW 85202651 U TW85202651 U TW 85202651U TW 340527 U TW340527 U TW 340527U
Authority
TW
Taiwan
Prior art keywords
decompression container
decompression
container
Prior art date
Application number
TW085202651U
Other languages
English (en)
Inventor
Toru Ikeda
Katsumi Ishii
Yoji Iizuka
Original Assignee
Tokyo Electron Co Ltd
Tokyo Electron Tohoku Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Co Ltd, Tokyo Electron Tohoku Kk filed Critical Tokyo Electron Co Ltd
Publication of TW340527U publication Critical patent/TW340527U/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/03—Pressure vessels, or vacuum vessels, having closure members or seals specially adapted therefor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
TW085202651U 1994-03-28 1995-03-31 Decompression container TW340527U (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP08088294A JP3165322B2 (ja) 1994-03-28 1994-03-28 減圧容器

Publications (1)

Publication Number Publication Date
TW340527U true TW340527U (en) 1998-09-11

Family

ID=13730721

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085202651U TW340527U (en) 1994-03-28 1995-03-31 Decompression container

Country Status (4)

Country Link
US (1) US5520142A (zh)
JP (1) JP3165322B2 (zh)
KR (1) KR100257104B1 (zh)
TW (1) TW340527U (zh)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5676757A (en) * 1994-03-28 1997-10-14 Tokyo Electron Limited Decompression container
JPH09167755A (ja) * 1995-12-15 1997-06-24 Nec Corp プラズマ酸化膜処理装置
US6712019B2 (en) * 1996-02-08 2004-03-30 Canon Kabushiki Kaisha Film forming apparatus having electrically insulated element that introduces power of 20-450MHz
JP3002649B2 (ja) * 1997-02-10 2000-01-24 芝浦メカトロニクス株式会社 真空容器及びこれを用いた成膜装置
KR100767762B1 (ko) * 2000-01-18 2007-10-17 에이에스엠 저펜 가부시기가이샤 자가 세정을 위한 원격 플라즈마 소스를 구비한 cvd 반도체 공정장치
US6416634B1 (en) * 2000-04-05 2002-07-09 Applied Materials, Inc. Method and apparatus for reducing target arcing during sputter deposition
TWI303084B (en) * 2000-09-08 2008-11-11 Tokyo Electron Ltd Shower head structure, film forming method, and gas processing apparauts
CN1309859C (zh) * 2001-05-17 2007-04-11 东京电子株式会社 基于圆筒的等离子体处理系统
JP4038653B2 (ja) * 2001-12-03 2008-01-30 株式会社安川電機 ウェハ搬送フォーク
US7887889B2 (en) * 2001-12-14 2011-02-15 3M Innovative Properties Company Plasma fluorination treatment of porous materials
US6764265B2 (en) * 2002-01-07 2004-07-20 Applied Materials Inc. Erosion resistant slit valve
JP4936730B2 (ja) * 2006-01-16 2012-05-23 東京エレクトロン株式会社 減圧容器および減圧処理装置
JP5190387B2 (ja) * 2009-01-16 2013-04-24 東京エレクトロン株式会社 真空装置及び基板処理装置
US8139340B2 (en) * 2009-01-20 2012-03-20 Plasma-Therm Llc Conductive seal ring electrostatic chuck
CN102341902A (zh) * 2009-03-03 2012-02-01 东京毅力科创株式会社 载置台结构、成膜装置和原料回收方法
JP5544907B2 (ja) * 2010-02-04 2014-07-09 東京エレクトロン株式会社 ガスシャワー用の構造体及び基板処理装置
JP2012141105A (ja) * 2011-01-05 2012-07-26 Shimadzu Corp 真空チャンバ
TWI613412B (zh) * 2013-03-11 2018-02-01 應用材料股份有限公司 高溫處理室蓋體
JP6734918B2 (ja) 2016-04-28 2020-08-05 ギガフォトン株式会社 タンク、ターゲット生成装置、及び、極端紫外光生成装置
US10872804B2 (en) * 2017-11-03 2020-12-22 Asm Ip Holding B.V. Apparatus and methods for isolating a reaction chamber from a loading chamber resulting in reduced contamination
JP7339062B2 (ja) * 2019-08-09 2023-09-05 東京エレクトロン株式会社 載置台及び基板処理装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5841656B2 (ja) * 1975-09-11 1983-09-13 株式会社日立国際電気 ハンドウタイキソウセイチヨウソウチ
US4133442A (en) * 1976-12-27 1979-01-09 Structural Fibers, Inc. Tank closure assembly
US4418646A (en) * 1982-03-29 1983-12-06 Eaton Corporation Load lock valve
JPS6097622A (ja) * 1983-11-01 1985-05-31 Toshiba Mach Co Ltd エピタキシヤル装置
US4539062A (en) * 1984-03-12 1985-09-03 Tegal Corporation Modular plasma reactor with local atmosphere
US4640223A (en) * 1984-07-24 1987-02-03 Dozier Alfred R Chemical vapor deposition reactor
JPH0193463A (ja) * 1987-10-05 1989-04-12 Fuji Electric Co Ltd 超電導セラミックス体の製造方法
JPH03126694A (ja) * 1989-10-06 1991-05-29 Hitachi Electron Eng Co Ltd 気相反応装置
US5072851A (en) * 1990-05-23 1991-12-17 Essef Corporation Dynamic pressure relief seal for pressure vessels
US5096536A (en) * 1990-06-12 1992-03-17 Micron Technology, Inc. Method and apparatus useful in the plasma etching of semiconductor materials
JPH04100533A (ja) * 1990-08-18 1992-04-02 Mitsubishi Electric Corp 真空容器
US5133986A (en) * 1990-10-05 1992-07-28 International Business Machines Corporation Plasma enhanced chemical vapor processing system using hollow cathode effect
JP2657850B2 (ja) * 1990-10-23 1997-09-30 株式会社半導体エネルギー研究所 プラズマ発生装置およびそれを用いたエッチング方法
US5223001A (en) * 1991-11-21 1993-06-29 Tokyo Electron Kabushiki Kaisha Vacuum processing apparatus
US5429704A (en) * 1993-11-16 1995-07-04 Sony Electronics, Inc. Etching tool

Also Published As

Publication number Publication date
JP3165322B2 (ja) 2001-05-14
KR100257104B1 (ko) 2000-05-15
JPH07273095A (ja) 1995-10-20
US5520142A (en) 1996-05-28

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