TW340265B - Semiconductor memory device and the system carrying this device - Google Patents

Semiconductor memory device and the system carrying this device

Info

Publication number
TW340265B
TW340265B TW086107442A TW86107442A TW340265B TW 340265 B TW340265 B TW 340265B TW 086107442 A TW086107442 A TW 086107442A TW 86107442 A TW86107442 A TW 86107442A TW 340265 B TW340265 B TW 340265B
Authority
TW
Taiwan
Prior art keywords
memory
semiconductor memory
microprocessor
transistor
connection
Prior art date
Application number
TW086107442A
Other languages
English (en)
Inventor
Daisaburo Takashima
Original Assignee
Toshiba Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Co Ltd filed Critical Toshiba Co Ltd
Application granted granted Critical
Publication of TW340265B publication Critical patent/TW340265B/zh

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/221Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225Auxiliary circuits
    • G11C11/2273Reading or sensing circuits or methods
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225Auxiliary circuits
    • G11C11/2275Writing or programming circuits or methods
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/14Dummy cell management; Sense reference voltage generators
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/18Bit line organisation; Bit line lay-out
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N19/00Methods or arrangements for coding, decoding, compressing or decompressing digital video signals
    • H04N19/42Methods or arrangements for coding, decoding, compressing or decompressing digital video signals characterised by implementation details or hardware specially adapted for video compression or decompression, e.g. dedicated software implementation
    • H04N19/423Methods or arrangements for coding, decoding, compressing or decompressing digital video signals characterised by implementation details or hardware specially adapted for video compression or decompression, e.g. dedicated software implementation characterised by memory arrangements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B53/00Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F15/00Digital computers in general; Data processing equipment in general
    • G06F15/76Architectures of general purpose stored program computers
    • G06F15/78Architectures of general purpose stored program computers comprising a single central processing unit
    • G06F15/7839Architectures of general purpose stored program computers comprising a single central processing unit with memory

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Power Engineering (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
TW086107442A 1996-06-10 1997-05-30 Semiconductor memory device and the system carrying this device TW340265B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP14745296 1996-06-10
JP111597 1997-01-08

Publications (1)

Publication Number Publication Date
TW340265B true TW340265B (en) 1998-09-11

Family

ID=58263433

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086107442A TW340265B (en) 1996-06-10 1997-05-30 Semiconductor memory device and the system carrying this device

Country Status (2)

Country Link
KR (1) KR100344340B1 (zh)
TW (1) TW340265B (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1187140A3 (en) * 2000-09-05 2002-09-11 Matsushita Electric Industrial Co., Ltd. Method for driving semiconductor memory
JP3887348B2 (ja) 2003-05-16 2007-02-28 株式会社東芝 半導体記憶装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3278981B2 (ja) * 1993-06-23 2002-04-30 株式会社日立製作所 半導体メモリ
JPH07176195A (ja) * 1993-12-17 1995-07-14 Mitsubishi Electric Corp 不揮発性半導体記憶装置

Also Published As

Publication number Publication date
KR19980069790A (ko) 1998-10-26
KR100344340B1 (ko) 2002-10-31

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Legal Events

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MK4A Expiration of patent term of an invention patent