TW334623B - The method by etching bottom of anti-reaction coating layer to control line-width - Google Patents

The method by etching bottom of anti-reaction coating layer to control line-width

Info

Publication number
TW334623B
TW334623B TW085113977A TW85113977A TW334623B TW 334623 B TW334623 B TW 334623B TW 085113977 A TW085113977 A TW 085113977A TW 85113977 A TW85113977 A TW 85113977A TW 334623 B TW334623 B TW 334623B
Authority
TW
Taiwan
Prior art keywords
layer
etching
focus
full covered
photoresist
Prior art date
Application number
TW085113977A
Other languages
English (en)
Inventor
Liou-Gong Lin
Shiuh-Lii Jeng
xiang-yuan Zheng
Original Assignee
Vanguard Int Semiconduct Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vanguard Int Semiconduct Corp filed Critical Vanguard Int Semiconduct Corp
Priority to TW085113977A priority Critical patent/TW334623B/zh
Application granted granted Critical
Publication of TW334623B publication Critical patent/TW334623B/zh

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Landscapes

  • Drying Of Semiconductors (AREA)
TW085113977A 1996-11-14 1996-11-14 The method by etching bottom of anti-reaction coating layer to control line-width TW334623B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW085113977A TW334623B (en) 1996-11-14 1996-11-14 The method by etching bottom of anti-reaction coating layer to control line-width

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW085113977A TW334623B (en) 1996-11-14 1996-11-14 The method by etching bottom of anti-reaction coating layer to control line-width

Publications (1)

Publication Number Publication Date
TW334623B true TW334623B (en) 1998-06-21

Family

ID=58263005

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085113977A TW334623B (en) 1996-11-14 1996-11-14 The method by etching bottom of anti-reaction coating layer to control line-width

Country Status (1)

Country Link
TW (1) TW334623B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6878612B2 (en) * 2002-09-16 2005-04-12 Oki Electric Industry Co., Ltd. Self-aligned contact process for semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6878612B2 (en) * 2002-09-16 2005-04-12 Oki Electric Industry Co., Ltd. Self-aligned contact process for semiconductor device

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees