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Application filed by Taiwan Semiconductor Mfg Co LtdfiledCriticalTaiwan Semiconductor Mfg Co Ltd
Priority to TW085111456ApriorityCriticalpatent/TW329550B/en
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A method for forming dielectric on jutted part of IC structure includes the following steps: (a) Deposit passivation layer on jut; (b) Use high-density plasma to deposit insulating layer on top of passivation layer.
TW085111456A1996-09-191996-09-19The improved structure of inter-metal dielectric and its manufacturing method
TW329550B
(en)