TW329550B - The improved structure of inter-metal dielectric and its manufacturing method - Google Patents

The improved structure of inter-metal dielectric and its manufacturing method

Info

Publication number
TW329550B
TW329550B TW085111456A TW85111456A TW329550B TW 329550 B TW329550 B TW 329550B TW 085111456 A TW085111456 A TW 085111456A TW 85111456 A TW85111456 A TW 85111456A TW 329550 B TW329550 B TW 329550B
Authority
TW
Taiwan
Prior art keywords
inter
manufacturing
improved structure
metal dielectric
passivation layer
Prior art date
Application number
TW085111456A
Other languages
Chinese (zh)
Inventor
Jiin-Kuen Wang
Original Assignee
Taiwan Semiconductor Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg Co Ltd filed Critical Taiwan Semiconductor Mfg Co Ltd
Priority to TW085111456A priority Critical patent/TW329550B/en
Application granted granted Critical
Publication of TW329550B publication Critical patent/TW329550B/en

Links

Abstract

A method for forming dielectric on jutted part of IC structure includes the following steps: (a) Deposit passivation layer on jut; (b) Use high-density plasma to deposit insulating layer on top of passivation layer.
TW085111456A 1996-09-19 1996-09-19 The improved structure of inter-metal dielectric and its manufacturing method TW329550B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW085111456A TW329550B (en) 1996-09-19 1996-09-19 The improved structure of inter-metal dielectric and its manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW085111456A TW329550B (en) 1996-09-19 1996-09-19 The improved structure of inter-metal dielectric and its manufacturing method

Publications (1)

Publication Number Publication Date
TW329550B true TW329550B (en) 1998-04-11

Family

ID=58262539

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085111456A TW329550B (en) 1996-09-19 1996-09-19 The improved structure of inter-metal dielectric and its manufacturing method

Country Status (1)

Country Link
TW (1) TW329550B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8034691B2 (en) 2008-08-18 2011-10-11 Macronix International Co., Ltd. HDP-CVD process, filling-in process utilizing HDP-CVD, and HDP-CVD system

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8034691B2 (en) 2008-08-18 2011-10-11 Macronix International Co., Ltd. HDP-CVD process, filling-in process utilizing HDP-CVD, and HDP-CVD system

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