ES8403666A1 - Semiconductor integrated circuit structures having insulated conductors. - Google Patents
Semiconductor integrated circuit structures having insulated conductors.Info
- Publication number
- ES8403666A1 ES8403666A1 ES521708A ES521708A ES8403666A1 ES 8403666 A1 ES8403666 A1 ES 8403666A1 ES 521708 A ES521708 A ES 521708A ES 521708 A ES521708 A ES 521708A ES 8403666 A1 ES8403666 A1 ES 8403666A1
- Authority
- ES
- Spain
- Prior art keywords
- integrated circuit
- semiconductor integrated
- circuit structures
- insulated conductors
- phosphorus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000004020 conductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 2
- 229910052698 phosphorus Inorganic materials 0.000 abstract 2
- 239000011574 phosphorus Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 238000000637 aluminium metallisation Methods 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/5329—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Insulation between first and second levels of aluminum metallization in semiconductor integrated circuit structures comprises a phosphorus-rich, plasma planarized, deposited silicon dioxide layer (14) and a phosphorus-poor layer of silicon dioxide (15) deposited upon said phosphorus-rich layer.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US37105582A | 1982-04-23 | 1982-04-23 |
Publications (2)
Publication Number | Publication Date |
---|---|
ES521708A0 ES521708A0 (en) | 1984-04-01 |
ES8403666A1 true ES8403666A1 (en) | 1984-04-01 |
Family
ID=23462292
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES521708A Expired ES8403666A1 (en) | 1982-04-23 | 1983-04-21 | Semiconductor integrated circuit structures having insulated conductors. |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP0105915A1 (en) |
ES (1) | ES8403666A1 (en) |
GB (1) | GB2118777A (en) |
IT (1) | IT1170132B (en) |
WO (1) | WO1983003923A1 (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60198847A (en) * | 1984-03-23 | 1985-10-08 | Nec Corp | Semiconductor device and manufacture thereof |
FR2583220B1 (en) * | 1985-06-11 | 1987-08-07 | Thomson Csf | PROCESS FOR PRODUCING AT LEAST TWO METALLIZATIONS OF A SEMICONDUCTOR COMPONENT COVERED WITH A DIELECTRIC LAYER AND COMPONENT OBTAINED BY THIS DIELECTRIC |
US4654269A (en) * | 1985-06-21 | 1987-03-31 | Fairchild Camera & Instrument Corp. | Stress relieved intermediate insulating layer for multilayer metalization |
JPH088265B2 (en) * | 1988-09-13 | 1996-01-29 | 株式会社東芝 | Compound semiconductor device and manufacturing method thereof |
US5424570A (en) * | 1992-01-31 | 1995-06-13 | Sgs-Thomson Microelectronics, Inc. | Contact structure for improving photoresist adhesion on a dielectric layer |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3882530A (en) * | 1971-12-09 | 1975-05-06 | Us Government | Radiation hardening of mos devices by boron |
US4005455A (en) * | 1974-08-21 | 1977-01-25 | Intel Corporation | Corrosive resistant semiconductor interconnect pad |
JPS5171068A (en) * | 1974-12-16 | 1976-06-19 | Matsushita Electronics Corp | HANDOTA ISOCHI |
JPS54147789A (en) * | 1978-05-11 | 1979-11-19 | Matsushita Electric Ind Co Ltd | Semiconductor divice and its manufacture |
JPS577153A (en) * | 1980-06-16 | 1982-01-14 | Nec Corp | Preparation of semiconductor device |
JPS6046546B2 (en) * | 1980-06-16 | 1985-10-16 | 日本電気株式会社 | Manufacturing method of semiconductor device |
JPS5727047A (en) * | 1980-07-25 | 1982-02-13 | Seiko Epson Corp | Semiconductor device |
JPS57113235A (en) * | 1980-12-29 | 1982-07-14 | Nec Corp | Semiconductor device |
-
1983
- 1983-04-07 EP EP83901662A patent/EP0105915A1/en not_active Withdrawn
- 1983-04-07 WO PCT/US1983/000493 patent/WO1983003923A1/en not_active Application Discontinuation
- 1983-04-20 GB GB08310669A patent/GB2118777A/en not_active Withdrawn
- 1983-04-20 IT IT20700/83A patent/IT1170132B/en active
- 1983-04-21 ES ES521708A patent/ES8403666A1/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB8310669D0 (en) | 1983-05-25 |
ES521708A0 (en) | 1984-04-01 |
IT1170132B (en) | 1987-06-03 |
WO1983003923A1 (en) | 1983-11-10 |
GB2118777A (en) | 1983-11-02 |
IT8320700A0 (en) | 1983-04-20 |
EP0105915A1 (en) | 1984-04-25 |
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