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Application filed by United Microelectronics CorpfiledCriticalUnited Microelectronics Corp
Priority to TW84110300ApriorityCriticalpatent/TW274632B/en
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Publication of TW274632BpublicationCriticalpatent/TW274632B/en
A method to avoid the resistance of complex-crystalline silicon variable on fabricating, by which a complex-crystalline silicon of high resistance having load region and conductive region is being applied to avoid the resistance being effected on succeeding procedures, which comprising the steps of: forming a insulating layer over the complex-crystalline of highresistance; and forming a metal layer over the insulating layer to completely mask the load region of the complex-crystalline of high resistance covered beneath the insulating layer.
TW84110300A1995-10-031995-10-03A method to avoid the resistance of complex-crystalline silicon variable on fabricating
TW274632B
(en)