TW326969U - Thin film forming device - Google Patents
Thin film forming deviceInfo
- Publication number
- TW326969U TW326969U TW085212359U TW85212359U TW326969U TW 326969 U TW326969 U TW 326969U TW 085212359 U TW085212359 U TW 085212359U TW 85212359 U TW85212359 U TW 85212359U TW 326969 U TW326969 U TW 326969U
- Authority
- TW
- Taiwan
- Prior art keywords
- thin film
- film forming
- forming device
- thin
- forming
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/4558—Perforated rings
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32633—Baffles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP26161894A JP3699142B2 (ja) | 1994-09-30 | 1994-09-30 | 薄膜形成装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW326969U true TW326969U (en) | 1998-02-11 |
Family
ID=17364405
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW085212359U TW326969U (en) | 1994-09-30 | 1995-08-11 | Thin film forming device |
Country Status (4)
Country | Link |
---|---|
US (1) | US5522936A (zh) |
JP (1) | JP3699142B2 (zh) |
KR (1) | KR0167829B1 (zh) |
TW (1) | TW326969U (zh) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3360090B2 (ja) * | 1994-09-30 | 2002-12-24 | アネルバ株式会社 | プラズマ処理装置 |
US6283130B1 (en) * | 1995-05-30 | 2001-09-04 | Anelva Corporation | Plasma cleaning method and placement area protector used in the method |
US5728260A (en) * | 1996-05-29 | 1998-03-17 | Applied Materials, Inc. | Low volume gas distribution assembly and method for a chemical downstream etch tool |
JP2000514136A (ja) | 1996-06-28 | 2000-10-24 | ラム リサーチ コーポレイション | 高密度プラズマ化学蒸着装置および方法 |
US6013155A (en) * | 1996-06-28 | 2000-01-11 | Lam Research Corporation | Gas injection system for plasma processing |
US6184158B1 (en) | 1996-12-23 | 2001-02-06 | Lam Research Corporation | Inductively coupled plasma CVD |
US6042687A (en) * | 1997-06-30 | 2000-03-28 | Lam Research Corporation | Method and apparatus for improving etch and deposition uniformity in plasma semiconductor processing |
JPH11193470A (ja) * | 1997-12-26 | 1999-07-21 | Canon Inc | 堆積膜形成装置及び堆積膜形成方法 |
IL138264A0 (en) * | 1998-03-05 | 2001-10-31 | Tokyo Electron Ltd | Plasma processing apparatus and plasma processing method |
US6230651B1 (en) * | 1998-12-30 | 2001-05-15 | Lam Research Corporation | Gas injection system for plasma processing |
KR20010062209A (ko) * | 1999-12-10 | 2001-07-07 | 히가시 데쓰로 | 고내식성 막이 내부에 형성된 챔버를 구비하는 처리 장치 |
US6481447B1 (en) * | 2000-09-27 | 2002-11-19 | Lam Research Corporation | Fluid delivery ring and methods for making and implementing the same |
KR100433285B1 (ko) * | 2001-07-18 | 2004-05-31 | 주성엔지니어링(주) | 멀티 홀 앵글드 가스분사 시스템을 갖는 반도체소자제조장치 |
US6676760B2 (en) | 2001-08-16 | 2004-01-13 | Appiled Materials, Inc. | Process chamber having multiple gas distributors and method |
US20030070620A1 (en) | 2001-10-15 | 2003-04-17 | Cooperberg David J. | Tunable multi-zone gas injection system |
US20040231798A1 (en) * | 2002-09-13 | 2004-11-25 | Applied Materials, Inc. | Gas delivery system for semiconductor processing |
DE102004029466A1 (de) * | 2004-06-18 | 2006-01-05 | Leybold Optics Gmbh | Medieninjektor |
KR100977146B1 (ko) * | 2007-12-27 | 2010-08-23 | 세메스 주식회사 | 유체 공급유닛 및 이를 갖는 기판 처리 장치 |
JP5603219B2 (ja) * | 2009-12-28 | 2014-10-08 | キヤノンアネルバ株式会社 | 薄膜形成装置 |
TW201224198A (en) * | 2010-12-15 | 2012-06-16 | Yu-Nan Lin | Plasma coating device |
KR101879175B1 (ko) * | 2011-10-20 | 2018-08-20 | 삼성전자주식회사 | 화학 기상 증착 장치 |
WO2017095561A1 (en) * | 2015-12-04 | 2017-06-08 | Applied Materials, Inc. | Advanced coating method and materials to prevent hdp-cvd chamber arcing |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA1159012A (en) * | 1980-05-02 | 1983-12-20 | Seitaro Matsuo | Plasma deposition apparatus |
-
1994
- 1994-09-30 JP JP26161894A patent/JP3699142B2/ja not_active Expired - Fee Related
-
1995
- 1995-08-11 TW TW085212359U patent/TW326969U/zh unknown
- 1995-08-28 US US08/519,732 patent/US5522936A/en not_active Expired - Lifetime
- 1995-08-30 KR KR1019950027377A patent/KR0167829B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JP3699142B2 (ja) | 2005-09-28 |
KR0167829B1 (ko) | 1999-02-01 |
JPH08100270A (ja) | 1996-04-16 |
KR960012301A (ko) | 1996-04-20 |
US5522936A (en) | 1996-06-04 |
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