TW322593B - - Google Patents
Download PDFInfo
- Publication number
- TW322593B TW322593B TW86106676A TW86106676A TW322593B TW 322593 B TW322593 B TW 322593B TW 86106676 A TW86106676 A TW 86106676A TW 86106676 A TW86106676 A TW 86106676A TW 322593 B TW322593 B TW 322593B
- Authority
- TW
- Taiwan
- Prior art keywords
- landmark
- corrosion
- surrounding
- magnet mechanism
- magnetic
- Prior art date
Links
Landscapes
- Physical Vapour Deposition (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW86106676A TW322593B (de) | 1997-05-19 | 1997-05-19 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW86106676A TW322593B (de) | 1997-05-19 | 1997-05-19 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW322593B true TW322593B (de) | 1997-12-11 |
Family
ID=51567156
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW86106676A TW322593B (de) | 1997-05-19 | 1997-05-19 |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW322593B (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI414618B (zh) * | 2005-08-26 | 2013-11-11 | 尼康股份有限公司 | A holding device, an assembling system, a sputtering device, and a processing method and a processing device |
-
1997
- 1997-05-19 TW TW86106676A patent/TW322593B/zh not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI414618B (zh) * | 2005-08-26 | 2013-11-11 | 尼康股份有限公司 | A holding device, an assembling system, a sputtering device, and a processing method and a processing device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6440282B1 (en) | Sputtering reactor and method of using an unbalanced magnetron | |
KR100321536B1 (ko) | 자전관스퍼터링또는자전관에칭용쌍극자고리자석 | |
TW486718B (en) | High-density plasma source for ionized metal deposition | |
JP4025193B2 (ja) | プラズマ生成装置、それを有するエッチング装置およびイオン物理蒸着装置、プラズマにエネルギを誘導結合するrfコイルおよびプラズマ生成方法 | |
EP1230666B1 (de) | Plasmabehandlungsvorrichtung und -verfahren | |
KR100450380B1 (ko) | 박막형성장치 및 박막형성방법 | |
JP5554047B2 (ja) | プラズマ処理装置 | |
TW564495B (en) | Plasma treatment apparatus | |
CN102859028A (zh) | 使用远程等离子体源的介电沉积 | |
US20110056912A1 (en) | Plasma processing apparatus and plasma processing method | |
JP2005019968A (ja) | 高密度プラズマ処理装置 | |
TW201536944A (zh) | 磁控濺鍍腔室及磁控濺鍍裝置 | |
JP2005509747A (ja) | プラズマスパッタリング用回転マグネトロンを組み合わせたマグネットアレイ | |
JP2002536556A (ja) | イオン化金属堆積用高密度プラズマ源 | |
JPH028365A (ja) | スパッター被覆装置 | |
US20050224344A1 (en) | Plasma processing apparatus and method | |
US7922865B2 (en) | Magnetic field generator for magnetron plasma, and plasma etching apparatus and method comprising the magnetic field generator | |
US8617363B2 (en) | Magnetron sputtering apparatus | |
CN101142094A (zh) | 磁控管溅射室上的分离磁体环 | |
TW322593B (de) | ||
WO2009154213A1 (ja) | マグネトロンスパッタ方法及びマグネトロンスパッタ装置 | |
US20130160950A1 (en) | Plasma processing apparatus | |
US6045672A (en) | Sputtering apparatus | |
JP2012204582A (ja) | プラズマ処理装置 | |
KR20010052285A (ko) | 스퍼터링 장치 및 마그네트론 유닛 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |