經濟部中央樣準局員工消费合作社印製 32^593 A7 __B7 _ 五、發明説明（1 ) 發明背景 1 .發明領域 本發明係與濺鍍裝置有關*尤其是與在製造半導體積 體電路等上用於薄膜沉稹的濺鍍裝置有關。 2 .相關技術說明 在使用濺鍍的薄膜沉積中，尤其是在製造髙度整合之 半導體裝置中，使用於薄膜沉積步驟的濺鍍中，極需.要在 具有優良步階覆蓋性質之髙方位比的細洞底部沉積一膜， 即改進底部覆蓋比例· 爲了與該需求一致，已進行改進作業以使得可沉積膜 而容許濺鍍粒子以小角度進入細洞。其中一項改進方法稱 瞄準濺鍍· 圖10示傳統濺鍍裝置例子中瞄準濺鍍裝置的示意圖 。在圖1 0的裝置中，陰極2及基底夾持器3的配置可令 其在真空槽1中相對。陰極2包含磁鐵機構4，及位在磁 鐵機構4前方的標地物5·膜沉積的基底30放在基底夾 持器3的前方。 在陰極2及基底夾持器3間的空間中配置瞄準器6。 瞄準器6的架構中包含多個小的圓柱組件，形成區段形式 ，使得高度方向垂直基底3 0 (在下文中，此方向稱爲軸 方向）*因此可沿軸方向區段配置濺鍍粒子的多個流動路 徑。此架構一般稱爲”柵形”或”蜂巢”架構。 從標地物放出的濺鍍粒子依據餘弦定律分佈·因此， 本纸張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） ] ---------^-------tr------m (請先閲讀背面之注意事項再填寫本頁) 32ι593 A7 __B7__ 五、發明説明（2 ) 多個濺鍍粒子以大的入射角進入瞄準器6。但是’大部份 的此種濺鍍粒子在瞄準器6的流體路徑之壁面上形成’其 結果爲從瞄準器6放出的濺鍍粒子主要包含小入射角的粒 子•結果，只有小入射角的濺鍍粒子在基底3 0上衝撞’ 因此執行基底3 0表面中形成之細洞底部的步階式涵蓋範 圍。 在上述的瞄準濺鍍裝置中，在瞄準器6上沉積的濺鍍 粒子減少睡準器6之流動路徑的截面區*其結果爲可通過 瞄準器6之濺鍍粒子數量隨著時間減少。因此濺鍍速率逐 渐下降。 最近，稱爲低壓力長距離濺鍍，且其中標地物及基底 間的距離（下文中稱此距離爲TS距離）增加（比傳統裝 置增加3至6倍），已發展此裝置作爲濺鍍裝置，此裝置 可防止上述問題且具有高度的低壓力長距離濺鍍。園1 1 示侓統濺鍍裝置之另一例子中低壓力長距離濺鍍的示意圖 〇 在圖1 1的裝置中，應用與圖1 0相同的方式，配置 陰極2及基底夾持器3使得在真空槽1內相對，且在基底 夾持器3的前面放置基底30·設定此TS距離使成爲如 1 5 0至3 6 0mm。設定真空槽1內部的壓力使其低於 $統系統中的壓力至約lmTo r r或更小。可導入此屋 力減少，使得濺鍍粒子的平均自由徑增加，而濺鍍粒子較 不會散射•因此濺鍍粒子的散射濺鍍減少，可基底上之大 致上垂直基底的方向中許多濺鍍粒子可相衝撞，所以可改 本紙張尺度適用中國國家輮準（CNS ) A4規格（210X297公釐）r —.1 ^ I I I 、—裝 I I I I 訂-~ 線 - ί (請先閲讀背面之注意事項再填寫本頁) 經濟部中央標準局貝工消费合作社印製 A7 B7_ 五、發明説明（3 ) 進細洞之底部覆蓋比例。 尤其是，例如日本專利未檢核案No. He i 7 -2 9 2 4 7 4說明當標地物直徑爲2 5 Omm，基底直徑 爲2 0 〇mm，TS距離爲3 0 0mm，且懕力爲3 X 1 〇_2P a時可改進底部覆蓋比例。 如該出版品之表3中所示，當T S距離增加時薄膜沉 積速率可大大地減少，而改進了底部覆蓋比例•結果，對 於256河1)11;或更大（線寬〇.25//111，方位比4 :6 )的細洞處理中的薄膜沉積更具效率，但是對於低壓 力長距離濺鍍的生產量卻會出現問題。當減少T S距離以 增加薄膜沉積率時，底部覆蓋比例減少，且很難將該技術 用於256Mb i t或更高位元的程序中。另言之，在低 壓力長距離濺鍍中，薄膜沉積速率與底部覆蓋比例呈交換 關係，且彼此互不相容· 經濟部中央橾準局貝工消费合作社印製 另外，濺鍍處理更進一步要求可適於大尺寸的基底。 在如上述之半導體裝置的製造程序中，基底的大小傾向於 加大，以從一基底中可製造出更多的裝置且改進生產置。 而且在液晶顯示裝置製造中可在玻璃基底中導入濺鍍程序 ，基底的大小可擴大以使得顯示區加寬。 此基底之加大尺寸與T S距離因素及上述低壓力長距 離濺鍍中薄膜沉積速率間的關係相當複雜，第一，基底的 加大尺寸產生一問題即：在低壓力長距離濺鍍中，在與基 底之中心或周團部位相遠離的部位底部覆蓋比例不足•此 問題將應用圖12，13 (A)及13 (B)說明。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 6 32£5Θ3 Β7 經濟部中央樣準局員工消費合作社印裝 五、發明説明（4 ) 1 I 圖1 2*13 ( A ) » 13 ( B ) 示 使用 圖 1 1之裝 1 置於大基 底上薄膜 沉 積所 產 生的 問 題 〇 圖 12 爲 在 該裝置 1 中標地物 的基底的 部 份視 圖 ，且 圖 1 3 ( A ) } 1 3 ( B 1 I 請 1 | )爲基底 及周圍部 位 之中 心 附近 的 底 部 覆 蓋比 例 的 截面圖 先 閲 I | 〇 讀 背 £r 1 | 之 1 如圖 1 2中所 示 者， 檩 地物 5 及 基 底 3 0 相 平 行使得 注 | 1 I 彼此相對 *且其中 心 軸（ 通 過中 心 且 垂 直 表面 的 軸 )共線 事 項 罗·**"* 1 1 。圖1 2 只顯示對 應 中心 軸 2 0 之 一 側 部 份。 寫 本 1 當執 行濺鍍時 1 如圖 1 2之 斜 線 部 位 所指 示 的 標地物 頁 S_^ 1 1 5之表面 。在基底 3 0及 周 圍部 位 中 心 附 近對 應 形 成的細 1 1 洞3 0 1 中，應用 興 圖1 3 (A ) t 1 3 (B ) 不 同的方 1 1 式沉積膜 β在基底 3 0中 心 附近 t 如 圖 1 3 ( A ) 所示， 訂 I 在細洞3 0 1底部 nfc 應 用優 良 的步 階 涵 蓋 性 質沉 積 膜 3 0 2 1 1 I •比照上 ，在基底 3 0之 周 圍部 位 中 ( 其 在與 標 地 物同一 1 1 1 直徑之部 位的外側 ) ，從 大 入射 角 之 中 心 軸側 邊 衝 撞的濺 — 1 線 1 鍍粒子數 增加，且 因 此細 洞 3 0 1 的 狀 態 爲（ 如 圖 1 3 ( B )所示 ):在面 對 基底 3 0之 周 圔 端 側 的壁 面 上 沉積膜 1 1 3 0 2, 而在中心 軸 及底 面側的 壁 面 上 則 不沉 積 〇 1 | 在接 觸洞內面 上 的障 壁 金屬 沉 積 例 子 中， 此 狀態導致 I 一重大的 缺點。當 使 用大 基 底時 9 標 地 物 的大 小 將 隨著增 1 L 加· 1 1 增加 基底大小 的 問題 相 當複 雜 9 而 且 與上 述 薄膜沉積 1 1 率不相容 問題糾纏 在 一起 9 因此 使 得 問 題 更形 惡 化 。此將 1 1 使用本發 明之受讓 人 的公 司 中使 用 的 數 據 加以 說 明 〇 1 1 本紙張尺度適用中國國家標準（CNS ) Α4规格（210Χ 297公釐）732 ^ 593 A7 __B7 _ printed by the Employee Consumer Cooperative of the Central Prototype Bureau of the Ministry of Economic Affairs 5. Description of the invention (1) Background of the invention 1. Field of the invention The present invention is related to the sputtering device * especially in the manufacture of semiconductor integrated circuits, etc. Related to the sputtering device used for thin film sinking. 2. Relevant technical description In the deposition of thin films using sputtering, especially in the manufacture of high-integrity semiconductor devices, it is extremely necessary to be used in the sputtering of thin film deposition steps. It is necessary to have a high orientation with excellent step coverage properties. A film is deposited at the bottom of the fine hole, that is, to improve the bottom coverage ratio. In keeping with this demand, improvements have been made so that a film can be deposited to allow sputtered particles to enter the fine hole at a small angle. One of the improvements is called aiming sputtering. Figure 10 shows a schematic diagram of the aiming sputtering device in the example of a conventional sputtering device. In the apparatus of FIG. 10, the cathode 2 and the substrate holder 3 are arranged so that they face each other in the vacuum chamber 1. The cathode 2 includes a magnet mechanism 4 and a landmark 5 located in front of the magnet mechanism 4 · a film deposited substrate 30 is placed in front of the substrate holder 3. A sight 6 is arranged in the space between the cathode 2 and the substrate holder 3. The structure of the sight 6 includes a plurality of small cylindrical components, forming a segment form, so that the height direction is perpendicular to the base 30 (hereinafter, this direction is referred to as the axial direction) * Therefore, the sputtering particles can be arranged in sections along the axial direction Multiple flow paths. This architecture is generally referred to as a "grid" or "honeycomb" architecture. Sputtered particles emitted from the landmark are distributed according to the law of cosine. Therefore, the paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297mm)] --------- ^ ----- --tr ------ m (Please read the precautions on the back before filling in this page) 32ι593 A7 __B7__ V. Description of the invention (2) Multiple sputtered particles enter the sight 6 at a large angle of incidence. However, 'most of these sputtered particles are formed on the wall surface of the fluid path of the sight 6'. The result is that the sputtered particles emitted from the sight 6 mainly contain particles with a small incident angle. As a result, only those with a small incident angle The sputtered particles collide on the substrate 30 'so the step coverage of the bottom of the fine hole formed in the surface of the substrate 30 is performed. In the above-mentioned aiming sputtering device, the sputtered particles deposited on the sight 6 reduce the cross-sectional area of the flow path of the sight 6 *. As a result, the number of sputtered particles that can pass through the sight 6 decreases with time. Therefore, the sputtering rate gradually decreases. Recently, it is called low-pressure long-distance sputtering, and the distance between the landmark and the substrate (hereinafter referred to as the TS distance) has increased (3 to 6 times more than the traditional device). This device has been developed as a sputtering Device, this device can prevent the above problems and has a high low pressure long distance sputtering. Park 1 1 shows a schematic diagram of low-pressure long-distance sputtering in another example of a sputtering system. In the apparatus of FIG. 11, the cathode 2 and the substrate holder 3 are arranged in the same manner as in FIG. 10. Opposite in the vacuum chamber 1, and place the substrate 30 in front of the substrate holder 3. Set this TS distance so that it becomes, for example, 150 to 360 mm. The pressure inside the vacuum tank 1 is set to be lower than the pressure in the conventional system to about lmTo r r or less. This reduced house force can be introduced, so that the average free diameter of the sputtered particles increases, and the sputtered particles are less scattered. Therefore, the sputtered sputtering of the sputtered particles is reduced, and many sputters on the substrate can be substantially perpendicular to the substrate The particles can collide, so the paper size can be changed to the Chinese National Standard (CNS) A4 specifications (210X297 mm) r —.1 ^ III, —installed IIII order-~ line-ί (please read the precautions on the back first (Fill in this page again) A7 B7_ printed by the Beigong Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs. 5. Description of the invention (3) Coverage ratio at the bottom of the fine hole. In particular, for example, Japanese Patent Unexamined Case No. He i 7 -2 9 2 4 7 4 shows that when the diameter of the landmark is 2 5 Omm, the diameter of the base is 200 mm, the TS distance is 300 mm, and the When the force is 3 X 1 〇_2Pa, the bottom coverage ratio can be improved. As shown in Table 3 of this publication, when the TS distance increases, the film deposition rate can be greatly reduced, and the bottom coverage ratio is improved. As a result, for 256 rivers 1) 11; or greater (line width 0.25 / / 111, azimuth ratio 4: 6), the thin film deposition in the thin hole processing is more efficient, but it will cause problems for the throughput of low pressure and long distance sputtering. When the T S distance is reduced to increase the thin film deposition rate, the bottom coverage ratio is reduced, and it is difficult to apply this technique to 256Mbit or higher bit programs. In other words, in low-pressure long-distance sputtering, the film deposition rate and the bottom coverage ratio are in an exchange relationship, and they are not compatible with each other. Printed by the Ministry of Economic Affairs, Central Bureau of Industry, Beigong Consumer Cooperative. In addition, the sputtering process is further The requirements can be adapted to large-sized substrates. In the manufacturing process of the semiconductor device as described above, the size of the substrate tends to increase, so that more devices can be manufactured from a substrate and the production facility is improved. Moreover, in the manufacture of liquid crystal display devices, a sputtering process can be introduced into the glass substrate, and the size of the substrate can be enlarged to widen the display area. The relationship between the increased size of the substrate and the TS distance factor and the film deposition rate in the low-pressure long-distance sputtering is quite complicated. First, the increased size of the substrate creates a problem that in low-pressure long-distance sputtering Insufficient coverage of the bottom of the part far away from the center of the base or the peripheral masses. This problem will be explained using Figures 12, 13 (A) and 13 (B). This paper scale is applicable to the Chinese National Standard (CNS) A4 specification (210X297mm) 6 32 £ 5Θ3 Β7 Printed by the Employee Consumer Cooperative of the Central Prototype Bureau of the Ministry of Economic Affairs 5. Description of the invention (4) 1 I Figure 1 2 * 13 (A) »13 (B) shows the problem caused by the deposition of thin film placed on a large substrate using the device of FIG. 1. FIG. 12 is a partial view of the substrate of the landmark in the device 1, and FIG. 13 (A)} 1 3 (B 1 I Please 1 |) is a cross-sectional view of the bottom coverage ratio near the center of the base and surrounding parts. First read I | 〇 读 背 £ r 1 | of 1 As shown in Figure 1 2, purlin features 5 and the substrate 3 0 are parallel so that the note | 1 I are opposite to each other * and their central axis (the axis passing through the center and perpendicular to the surface) is collinear. *** " * 1 1. Figure 12 shows only the part corresponding to the central axis 20. Copybook 1 When performing sputtering 1 The surface of the landmark page S_ ^ 1 1 5 as indicated by the oblique lines in Figure 12. In the thin 1 1 hole 3 0 1 formed corresponding to the base 30 and the center of the surrounding parts, different methods of 1 1 (1) t 1 3 (B) deposited film β in the vicinity of the center of the base 3 0 t As shown in Figure 1 3 (A), order I at the bottom of the fine hole 3 0 1 nfc application of excellent step coverage properties deposited film 3 0 2 1 1 I • For comparison, in the surrounding area of the substrate 30 (which On the outside of the part with the same diameter as the landmark 1 1 1), the splash from the side of the central axis of the large incident angle — 1 line 1 The number of plating particles increases, and therefore the state of the fine hole 3 0 1 is (as shown in the figure 1 3 (shown as B)): A film 1 1 3 0 2 is deposited on the wall surface on the peripheral end side facing the base 3 0, but no deposit is deposited on the wall surface on the central axis and bottom surface side. 1 | On the inner surface of the contact hole In the example of barrier metal deposition, this state leads to a major disadvantage. When using a large substrate 9 the size of the landmark will increase with the increase of 1 L plus. 1 1 The problem of increasing the size of the substrate is quite complicated 9 and is entangled with the above-mentioned thin film deposition 1 1 rate incompatibility problem 9 thus making the problem more tangible deterioration. This will explain 1 1 using the data used in the company of the assignee of this invention 〇 1 1 This paper standard is applicable to the Chinese National Standard (CNS) Α4 specification (210Χ 297 mm) 7
-I A7 B7 經濟部中央標準局貝工消费合作社印袋 五、 發明説明 (5 ) 1 1 圖 1 4 至 1 7 顯 示 與 低 壓 力 長 距 離 濺 鍍有 關 的 實 驗數. 祖 1 I 據 〇 圖 1 4 示 指 示 在 該 壓 力 及 T S 距 離 上 底部 覆 蓋 比 例 的 1 1 相 關 性 9 圖 1 5 顯 示 的 數 據 y 指 示 在 該 壓 力及 T S 距 離 下 1 I 請 1 I 所 得 到 之 薄 膜 的 薄 板 電 阻 分 佈 的 相 關 性 0 圖1 6 及 1 7 所 先 閲 1 I 1 1 示 的 數 據 > 指 示 底 部 覆 蓋 比 例 及 方 位 比 間 的關 係 〇 圖 1 6 背 面 1 | 示 T S 距 離 爲 3 4 0 m m 9 且 圖 1 7 示 T S距 離 爲 2 6 0 之 注 意 1 I m m 0 這 些 沉 積 係 在 此 狀 態 下 使 得 的 沉 積 ，其 中 該 基 底 的 事 項 再— 1 1 I 直 徑 爲 6 吋 » 且 標 地 物 的 直 徑 爲 2 6 9 m m 。 寫 本 1 如 圖 1 4 所 示 9 可 看 出 在 低 壓 力 範 團 中底 部 覆 蓋 比例 頁 ·«·._ 1 1 已 執 行 0 在 此 例 子 中 的 底 部 覆 蓋 比 例 ( 其 中T S 距 離 爲 1 1 1 0 0 m m ) 大 於 T S 距 離 爲 6 5 m m 之 例子 中 的 底 部 覆 1 1 蓋 比 例 〇 而 且 在 基 底 的 周 圍 部 位 的 底 部 覆蓋 比 例 大 於 基 訂 I 底 中 心 附 近 的 底 部 覆 蓋 比 例 〇 1 I 如 圖 1 5 所 示 當 增 加 T S 距 離 時 « 將破 壞 薄 板 電 阻 1 1 I 分 配 的 均 勻 性 • 但 是 » 此 傾 向 可 經 由 減 少 壓力 而 緩 和 〇 尤 1 1 線 1 其 是 當 壓 力 爲 2 0 m T 0 Γ Γ 或 更 小 時， 甚 至 當 T S 增 加 時薄板 電 阻 仍很 難改 變 〇 1 1 其 次 t 對 ntff 應 底 部 覆 蓋 比 例 及 方 位 比 間 的關 係 〇 如 圇 1 1 1 6 所 示 » 當 方 位 比 爲 2 時 » 有 可 能 得 到 4 0 至 4 5 % 的 1 I 周 圍 部 位 〇 實 際 上 知 道 9 當 底 部 覆 蓋 比 例 爲1 5 % 時 * 不 1 1 I 會 對 裝 置 的 性 質 產 生 任 何 影 響 〇 而 且 從 此 一觀 點 贅 可 看 出 1 1 I 低 壓 力 長 距 離 濺 鍍 方 法 爲 一 種 很 優 良 的 方 法。 在 弧 形 濺 鍍 1 1 裝 置 ( 如 圖 1 0 所 示 ) 中 * 底 部 覆 蓋 比 例 約爲 1 5 % 〇 由 1 1 此 » 可 再 次 了 解 低 壓 力 長 距 離 濺 鍍 方 法 的 優異 性 〇 1 1 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 322593 A7 B7 經濟部中央標準局5工消费合作社印製 五、發明説明（6 ) 在圖1 6中，標識0及周圍黑圈標示指示的基底中心. 附近的底部覆蓋比例，在此兩數據組中，將數據配置在同 一線上•此顯示在基底表面上維持相當均勻的底部覆蓋比 例。此薄膜沉稹速率與弧形濺鍍裝置方法中的薄膜沉積速 率類似，或約每分鐘6 0 0埃•即薄膜沉積速率減少傳統 需要之N裝置的底部覆蓋比例的1/3或1/4· 比較上，當TS距離減少到2 6 Omm吋，可將薄膜 沉積速率改進到每分鐘1 000埃•如圇1 7所示，但是 ，當方位比=2的例子中當底部覆蓋比例減少到約2 8到 3 5 %時。甚至在此例子中，底部覆蓋比例高於弧形濺鍍 方法的底部覆蓋比例或1 5%。 從這些結果可看出，當基底大小增加或直徑爲如 3 0 0 mm的例子中，下文將說明其底部覆蓋比例及薄膜 沉積速率。圖1 8爲在該底部覆蓋比例及薄膜沉稹速率上 基底放大尺寸的效應之研究結果。在圖1 8中，斜線部位 指示標地物5中腐蝕的截面形狀。 首先，如圓1 7所示，當標地物直徑爲269mm， 且TS距離爲340mm (圖18 (a))時，可得到優 良的底部覆蓋比例。此項設計也可以使用在基底3 0小於 標地物，且其直徑爲8mm的狀態中· 當基底3 0大於標地物5，且直徑爲3 0 0mm吋， 標地物5放大到一尺寸，此尺寸小於上述基底3 0的尺寸 。在此例子中，爲了得到小的底部覆蓋比例，T S距離需 要更進一步增加 本紙張尺度適用中國國家梯準（CNS ) A4说格（210X297公釐） 請 先 閲 讀 背，面 之 注 I- 旁 裝 訂 線 經濟部中央標準局爲工消费合作杜印製 A7 _B7 _五、發明説明（7 ) 此可應用代表性的最深腐蝕部位之N裝置粒子的飛行 路徑加以說明。在許多濺鍍處理中，在最深腐蝕部位腐蝕 期間的標地物區域上（下文中稱爲腐蝕區域），在標地物 中徑向中的特定部位傾向於更進一步腐蝕（下文中，此部 位稱爲最深腐蝕部位），且從此部位發出的濺鍍粒子對薄 膜沉積的狀態有極深的影響•在平面磁鐵濺鍍等的例子中 (其現今使用者），腐蝕速率形成的周圍形狀。在許多例 子中，最深腐蝕部位具有一周圍形狀。 圖1 9，2 0示最深腐蝕部位的周圍形狀。圖1 9爲 傳統裝置中使用之磁鐵機構的示意透視圖*且圖2 0爲傳 統裝置中陰極的透視圖。在如圖1 0或1 1所示的裝置中 ，配置在卒坦標地物5背面之磁鐵機構4包含一柱形中心 磁鐵4 1 2，此磁鐵固定在碟形軛4 1 1上，及一柱形周 圍磁鐵41 3包圍中心磁鐵4 1 2，而其間留下一間隙。 在中心磁鐵412之前表面上顯示者爲不同磁極及對 應的周圍磁鐵4 1 3。例如，中心磁鐵4 1 2架構S極， 且周圍磁鐵4 1 3架構N極。在此例子中，磁力線從周圍 磁鐵4 1 3發出通過標地物5而從標地物5表面的中心部 位漏出，圖1 9，2 0示弧形繞線進入標地物5表面的另 —部位，且隨後然後標地物5到達中心磁鐵。這些磁力的 磁漏線沿著中心磁鐵412及周圍磁鐵413間的間隙， 因此形成圓1 9，20中所示的周圍部位磁場。 在使用磁場功能的濺鍍程序中（如磁子濺鍍），由磁 場補捉電子，使得離子化氣體分子的效率改進。結果，由 請 先 閲 讀 背 面 之 注 意 % 裝 頁 訂 線 本紙張尺度適用中國國家標準（CNS ) A4規格（210Χ2ί»7公釐） -10 - 322593 A7 B7 經濟部中央橾準局負工消費合作社印裝 五、發明説明（8 ) 離子濺鍍之檫地物5的速率，即腐蝕區5 0的形狀對應磁 場形狀•在上述例子中（其中已設定周圔部位磁場），該 區域具有周圍形狀。 在磁子濺鍍中，電子執行在電場與磁場正交區域中磁 子的移動，且在該參考中離子化效應可達到最大。在圖 1 9 ，2 0的配置中，電場及磁場的正交關係可在磁力的 磁.漏線中之部位中建立，且強腐蝕傾向於在承受部位下方 發生。另外，最深腐蝕部位在磁力的弧形磁漏線的承受部 位中顯示出一周圍形狀· 如上所述，濺鏟粒子從最深腐蝕部位發出。結果，最 深腐蝕部位的幾何形態可對基底上薄膜沉積的狀態產生很 大的影響。當標地物5及基底3 0同軸配置，使得如圖 1 0，1 1相對面時，半周圍部位的最深腐蝕部位或標地 物5的一半影響在基底3 0之對應半速率的薄膜沉積，但 是不會影響該區域中的另一半，此係因爲基底3 0之另一 半區域受到標地物5中另一半周圔部位的腐蝕影響之故。 從一半周園部位之最深腐蝕部位放出的濺鍍粒子將在 下文中說明。在此濺鍍粒子中，在基底3 0中心附近處濺 鍍粒子的衝撞對應基底3 0則有最大的入射角•當最深腐 蝕部位的半徑不會大於標地物5半徑之半時，在基底3 0 之周圔部份衝撞的濺鍍粒子具有最小的入射角•但是此狀 態很少發生。 在圖1 8 ( a )的例子中，其中標地物爲直徑爲 2 6 9mm，當最深腐蝕部位位在與中心軸2 0分隔7 0 請 先 閱 讀 背 面 之 注-I A7 B7 Printed Bag of Beigong Consumer Cooperative, Central Bureau of Standards, Ministry of Economy V. Description of Invention (5) 1 1 Figure 1 4 to 1 7 show the number of experiments related to low pressure and long distance sputtering. Zu 1 I According to Figure 1 4 shows the correlation of the bottom coverage ratio at the pressure and TS distance 1 1 Correlation 9 Figure 1 5 shows the data y indicates the correlation of the sheet resistance distribution of the obtained film at the pressure and TS distance 1 I Please 1 I 0 Figures 1 6 and 1 7 read first 1 I 1 1 The data shown> indicates the relationship between the bottom coverage ratio and the azimuth ratio. Figure 1 6 back 1 | shows the TS distance is 3 4 0 mm 9 and Figure 1 7 shows Note that the TS distance is 2 6 0 1 I mm 0 These deposits are the deposits made in this state, where the matter of the substrate is again — 1 1 I with a diameter of 6 inches »and the diameter of the landmark is 2 6 9 mm. Writer 1 as shown in Figure 1 4 9 can be seen in the low pressure range group bottom coverage ratio page «· ._ 1 1 has been executed 0 The bottom coverage ratio in this example (where the TS distance is 1 1 1 0 0 mm) greater than the TS distance of 6 5 mm in the example of the bottom cover 1 1 cover ratio 〇 and the bottom of the surrounding area of the base coverage ratio is greater than the base I near the bottom center coverage ratio 〇1 I shown in Figure 15 When increasing the TS distance «will destroy the uniformity of the distribution of the sheet resistance 1 1 I • But» this tendency can be alleviated by reducing the pressure 〇 You 1 1 line 1 which is when the pressure is 2 0 m T 0 Γ Γ or less, Even when TS increases, the sheet resistance is still difficult to change. 〇1 1 Secondly, the relationship between the bottom coverage ratio and the azimuth ratio for ntff should be as shown in 囵 1 1 1 6 »When the azimuth ratio is 2, it is possible to get 4 0 Up to 45% of around 1 I Part 〇 Actually know 9 When the bottom coverage ratio is 15% * No 1 1 I will have any effect on the properties of the device 〇 And from this point of view it can be seen that 1 1 I low pressure long distance sputtering method is a very Excellent method. In the arc sputtering 1 1 device (shown in Figure 1 0) * The bottom coverage ratio is about 15%. ○ By 1 1 this »You can again understand the superiority of the low-pressure long-distance sputtering method. 〇 1 1 paper The scale is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) 322593 A7 B7 Printed by the Central Standards Bureau of the Ministry of Economic Affairs, Labor and Consumer Cooperatives 5. Invention description (6) In Figure 16, the logo 0 and the surrounding black circles indicate the indication The center of the base. Near the bottom coverage ratio. In the two data sets, the data is arranged on the same line. This shows that the bottom coverage ratio on the surface of the base is maintained fairly uniform. The thin film deposition rate is similar to the thin film deposition rate in the arc sputtering device method, or about 600 angstroms per minute. That is, the thin film deposition rate reduces the bottom coverage ratio of the traditionally required N device by 1/3 or 1/4 · In comparison, when the TS distance is reduced to 2 6 Omm, the film deposition rate can be improved to 1 000 angstroms per minute. • As shown in Fig. 17, however, when the orientation ratio = 2 the bottom coverage ratio is reduced to About 28 to 35 percent. Even in this example, the bottom coverage ratio is higher than that of the arc sputtering method or 15%. From these results, it can be seen that when the size of the substrate increases or the diameter is 300 mm, for example, the bottom coverage ratio and the film deposition rate will be described below. Figure 18 shows the results of studies on the effect of substrate size enlargement on the bottom coverage ratio and film sink rate. In Fig. 18, the oblique lines indicate the cross-sectional shape of the corrosion in the landmark 5. First, as shown by circle 17, when the diameter of the landmark is 269 mm and the TS distance is 340 mm (Figure 18 (a)), an excellent bottom coverage ratio can be obtained. This design can also be used when the base 30 is smaller than the landmark and its diameter is 8mm. When the base 30 is larger than the landmark 5 and the diameter is 300mm, the landmark 5 is enlarged to a size This size is smaller than the size of the above substrate 30. In this example, in order to obtain a small bottom coverage ratio, the TS distance needs to be further increased. The paper size is applicable to the Chinese National Standard (CNS) A4 format (210X297mm). Please read the back, side note I- side binding The A7 _B7 _ for the industrial-consumer cooperation is printed by the Central Standards Bureau of the Ministry of Line Economy. V. Invention description (7) This can be used to illustrate the flight path of the N device particles of the most deeply corroded parts. In many sputtering processes, on the landmark area during the corrosion of the deepest corrosion site (hereinafter referred to as the corrosion area), a specific location in the radial direction of the landmark tends to be further corroded (hereinafter, this location It is called the deepest corrosion site), and the sputtered particles emitted from this site have a profound influence on the state of thin film deposition. In the case of planar magnet sputtering etc. (its current users), the surrounding shape formed by the corrosion rate. In many cases, the deepest corroded site has a surrounding shape. Figure 19, 20 shows the shape of the deepest corroded area. Figure 19 is a schematic perspective view of the magnet mechanism used in the conventional device * and Figure 20 is a perspective view of the cathode in the conventional device. In the device shown in FIG. 10 or 1 1, the magnet mechanism 4 arranged on the back of the pawn landmark 5 includes a cylindrical central magnet 4 1 2 which is fixed on the dish-shaped yoke 4 1 1, and A cylindrical peripheral magnet 41 3 surrounds the central magnet 4 1 2 while leaving a gap therebetween. The front surface of the center magnet 412 shows different magnetic poles and corresponding surrounding magnets 4 1 3. For example, the center magnet 4 1 2 forms an S pole, and the surrounding magnet 4 13 forms an N pole. In this example, the magnetic lines of force are emitted from the surrounding magnets 4 1 3 through the landmark 5 and leak out from the center of the surface of the landmark 5. FIG. 19 and 20 show the arc winding into the surface of the landmark 5- Location, and then the landmark 5 reaches the center magnet. The magnetic flux leakage lines of these magnetic forces follow the gap between the center magnet 412 and the surrounding magnets 413, so that the surrounding magnetic fields shown in circles 19, 20 are formed. In the sputtering process using the magnetic field function (such as magnetron sputtering), the electrons are captured by the magnetic field, which improves the efficiency of ionizing gas molecules. As a result, please read the note on the back.% The paper size of the bound and bound book is applicable to the Chinese National Standard (CNS) A4 specification (210Χ2ί »7mm) -10-322593 A7 B7 Printed by the Central Labor Bureau of the Ministry of Economic Affairs Fifth, the description of the invention (8) The rate of the sassafras 5 of ion sputtering, that is, the shape of the corroded area 50 corresponds to the shape of the magnetic field. In the above example (where the magnetic field of the peripheral area has been set), this area has a surrounding shape. In magnetron sputtering, electrons perform the movement of magnetons in the area where the electric field and the magnetic field are orthogonal, and the ionization effect can be maximized in this reference. In the configuration of Fig. 19 and 20, the orthogonal relationship between the electric field and the magnetic field can be established in the part of the magnetic leakage line of the magnetic force, and strong corrosion tends to occur below the bearing part. In addition, the deepest corroded part shows a peripheral shape in the receiving part of the magnetic arc-shaped magnetic flux line. As described above, the shovel particles are emitted from the deepest corroded part. As a result, the geometry of the deepest etched site can have a large effect on the state of the film deposition on the substrate. When the landmark 5 and the substrate 30 are coaxially arranged, as shown in Figs. 10 and 11, the deepest corroded part of the half surrounding area or half of the landmark 5 affects the corresponding half-rate film deposition on the substrate 30 However, it will not affect the other half of the area. This is because the other half of the base 30 is affected by the corrosion of the surrounding half of the landmark 5. The sputtered particles emitted from the deepest corroded part of the half of the circle will be described below. Among the sputtered particles, the collision of the sputtered particles near the center of the substrate 30 has the largest incident angle corresponding to the substrate 30. When the radius of the deepest corroded part is not greater than half the radius of the landmark 5, the substrate Sputtered particles that are partially collided with the surrounding area of 3 0 have the smallest angle of incidence • However, this state rarely occurs. In the example of Figure 18 (a), where the landmark is 2 6 9mm in diameter, when the deepest corroded part is separated from the central axis 2 0 7 0, please read the back note first
I 旁 裝 訂 線 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐），， -11 A7 B7 經濟部中央揉準局貝工消費合作社印製 五、 發明説明 (9 ) 1 I m m 的位置 處 時（其 直 徑爲 14 0 m m )， 則在基 底 3 0 1 中 心 附近衝 撞 之濺鍍 粒 子的 入射角 θ 當 T S 距離爲 3 4 0 1 m m 時，約 爲 11 . 6 〇 〇 1 I 锖 1 I 比照上 9 當使用 大 尺寸 的基底 3 0 (直 徑爲3 0 0 閲 I I 讀 1 I τη m )時， 標 地物可 放 大因 此可具 有 與 上述 相似的 尺 寸 背 面 1 I 之 1 如 圖 1 8 ( b )所示 » 當標 地物微 大 於 基底 3 0, 且 直 徑 注 套 1 I 爲 3 14m m 時，在 對 應1 6 3m m 直 徑之 位置處 產 生 最 事 項 1 1 I 深 腐 蝕部位 如果使 用 上述 架構的 T S 距離 ，則在 中 心 附 寫 本 I I 近 衝 撞濺鍍 粒 子的入 射 角0 爲1 3 5 〇 〇 爲了設 定 奥 圖 頁 1 1 1 8 (a ) 相 同的入 射 角， 且使得 類 似 的底 部覆蓋 比 例 » 1 1 因 此 ，需要 增 加T S 距 離至 3 9 7 m m 。當 T S距 離 增 加 1 1 而 此 一大的 數 值時， 薄 膜沉 積速率 減 少 至某 —低值 在 此 訂 | 值 下 實際上 不 可能改 進 薄膜 沉積。 1 I 爲了符 合 上述狀 態 ，例 如，如 圖 1 8 ( d )所 示 在 1 1 I 實 m 上範圍 中 設定T S 距離 爲3 0 3 m m ( 與基底 的 直 徑 1 1 線 調 整 1 )， 使 得在中 心 附近 的入射 角 θ 約爲 15 . 0 0 〇 1 即 入 射角增 加 爲圖1 8 (b )之入 射 角 的（ 15. 0 / 1 1 1 1 .3 ) = 1 . 3 倍 β 1 5。的 入 射 角等 於傳統 尺 寸 ( 1 1 或 2 6 9m m )(最 深 腐蝕 部位的 直 徑 爲1 4 0m m ) 的 I 標 地 物5使 用 時且T S 距離 爲2 6 0 m m ( 圖1 8 ( C ) 1 ) 的 狀態下 所 得到者 〇 此配 置與圖 1 8 的濺 鍍結果 相 同 » 1 1 且 用 於方位 比 2的細 洞 其底 部覆羞 比 例 約爲 2 8至 3 5 % 1 1 1 如上所述 ，當使 用 低壓 力長距 離濺 鍍時 ，傳統 配 置 很 1 1 1 本紙張尺度適用中國國家標率（CNS ) A4規格（210X297公釐），〇 -12 - 經濟部中央揉準局員工消费合作社印製 扣 £593 A7 _B7__ 五、發明説明（10 ) 難u底部覆蓋比例，而仍可維持所需要的im里，並. 可符合基底放大的要求。 發明概述 爲了解決上述問題，本發明提供一種濺鍍裝置包含： —具有泵系統的真空槽；一位在該真空槽中的標地物；以 及一磁鐵機構，此磁鐵機構設定該標地物表面上的磁場， —面對該擦地物的基底，對標地物進行濺鍍處理而可由將 磁鐵機構機構的磁場得到離子，因此在基底的表面上沉積 薄膜；其中該磁鐵機構從該標地物之表面部位發出且進入 該標地物之表面另一部位的磁力之磁漏線，且也包含多個 周圍部位磁場，各周圍部位磁場由磁力磁漏線所涵蓋的範 圍形成，而在該標地物的表面上構成一周圍形狀*使得在 該標地物表面上由不相交叉的周圍部位磁場形成多個腐蝕 區域當該磁纊機構對應該標地物相當穩定時，各腐蝕區域 具有周圍形狀。 較佳實施例之詳細說明 下文中將說明本發明之實施例· 圖1示本發明第一實施例的濺鍍裝置·圖1的猫鍍裝 置包含：一具有泵系統1 1的真空槽1 ，一陰極2及一基 底夾持器3，配置此夾持器3使在真空槽內呈相對情況； —導氣系統7，可將氣體導入真空槽1 ，一陰極電源2 1 ，可將電壓加入陰極2;等· 本紙張纽適用中國國家標率（CNS )八4祕（21GX297公釐)~~ (請先閲讀背面之注意事項尸%寫本頁) -裝. 訂 線. A7 B7 經濟部中央揉準局貝工消费合作社印製 五、 發明説明（11 : 1 I 圖 1的裝 置 之 特 徴 爲陰極 2 之 配置 。圖 2 » 圖 3 示 圖. 1 1 之 裝 置中的 陰 極 2 之 配置。 圖 2 之示 意透 視 圖 示 磁 鐵 機 1 構 4 的 配置， 且 圖 3 的 示意透 視 圖 示周 圍部 位 磁 場 的 配 置 請 先 聞 1 1 » 此 周 圍部位 磁 場 由 圖 2之磁 鐵 機 構4 在標 地 物 上 產 生 〇 1 I 陰 極2包 含 磁 嫌 機構4及 標 地 物5 ，標 地 物 可 配 置 在 讀 背 面 1 I 磁 鐵 機 構4的 前 方 « 陰 極電源 2 1 將給 定的 電 壓 施 予 陰 極 之 注 意 1 1 I 0 實 施 例的特 徵 爲 在 標 地物的 表 面 上結 構選 擇 周 圍 部 位 磁 事 項 再肩 1 I 場 » 且 形成選 擇 具 有 周 圍部位 形 態 的腐 蝕區 域 » 因 此 使 其 寫 本 1 袭 不 會 互 相交錯 0 頁 1 1 現 在特別 說 明 磁 鐵 機構4 〇 磁 鐵機 構4 包 含 一 碟 形 軛 1 1 4 2 1 ，一 N 極 磁 鐵 4 2 2及 兩 S 極磁 鐵4 2 3 4 2 4 1 | 〇 這 些 磁鐵固 定 在軛 4 2 1上 〇 如 圓2 所示 ♦ N 極磁 鐵 訂 I 4 2 2 的形狀 包 含 —* 環 形的外 周 圍 部位 ，此 部 位 沿 著 軛 1 1 I 4 2 1 的周圍 端 沿 長 9 及一線 性部 位， 此部 位 延 長 因 此 1 1 I 分 割 爲 外周圍 部 位 部 位 所包園 的 內 部空 間， 此 位 置 偏 離 中 一 1 I 線 1 心 • 兩 S極磁 鐵 之 一 爲 第一S 極 磁 鐵4 2 3 此 S 極 磁 鐵 位在 由 線性部位所 形 成 之大空 間 的 中心 ，另 — S 極 爲 第 二 1 1 S 極 4 2 4， 其 位 在 小 空間的 中 心 •中 心軸 2 0 通 々思 m 第 — 1 | S 極 磁 鐵4 2 3 及 N 極 磁鐵4 2 2 間的 間隙 • 1 | 如 圖3所 示 » 依 據 如此05 置 的 磁鐵 機構 4 » 於 標 地 物 1 1 I 5 的 表 面上設 定 兩 不 同 大小的 周 團 部位 磁場 0 尤 其 是 從 N 1 1 極 磁 鐵 4 2 2 發 出 且 到 達第一 S 極 磁鐵 4 2 3 的 磁 力 之 弧 1 形 線 形 成圓周 形 狀 » 因 此可在第 — S極 磁鐵 4 3 2 周 圍 部 1 1 位 上 方 設定第 一 周 圔 部 位磁場 > 且 從N 極磁 鐵 4 2 2 出 發 1 1 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐）_ 14 A7 B7 經濟部中央揉準局貝工消费合作社印製 五、發明説明（l2 ) 並到達第二S極磁鐵4 2 4的磁力之弧形磁漏線形成圓周. 形狀，因此可在第二S極磁鐵4 2 4周圍部位上方的第二 周圍部位磁場•具有周圍形狀且如圖3中所示者不互相交 錯的兩腐蝕區域5 0由兩周圍部位磁場所形成》 本實施例的磁鐵機構4由轉動機構2 2加以轉動，此 將於下文中加以說明。實際上，當磁鐵機構4呈靜態時， 可形成上述選擇腐蝕區域5 0。當磁鐵機構4轉動時，腐 蝕區域5 0線繞中心軸轉動，且因此腐蝕區域5 0分佈過 標地物5大致上的整個表面（形成單一區）。 當選擇具有周圍部位形狀的腐蝕區域5 0，在標地物 5上形成而如上所述彼此不互相交錯時，各腐蝕區5 0的 最深腐蝕部位的直徑（當最深腐蝕部位不爲環形時，在周 圍部位上連接兩點間最短的線）總小於由傅統效應中所使 得之最深腐蝕部位的直徑*其中在傳統技術中形成單腐蝕 區5 0 ·當最.深腐蝕部位的直徑小時，濺鍍粒子的入射角 小而不會增加T S距離。 此圖參考圔4得到更詳細的說明。圖6之示意截面圖 示圖1 - 3之實施例的功能" 在由圖4之斜線區所指示之標地物5中的腐蝕區形狀 中，當基底3 0從最深腐蝕部位看去時，形成最大入射角 之基底3 0的表面部位之定位可令其與周圔部位最深腐蝕 部位的中心部位同軸，其方式如圖1 8所示。從最深腐蝕 部位出發之濺銨粒子的入射角0顯然小於圖18所示者’ 在圖1 8中形成單一腐蝕區域。 本紙張尺度適用中國國家標準（CNS)A4規格（ 210X297公釐）_ 15 _ (請先閲讀背面之注意事項e寫本頁) •裝. 訂 線. 經濟部中央梂準局貝工消費合作社印褽 32^593 A7 __B7五、發明説明（i3) 如上所述，依據實施例的配置，濺鍍粒子的入射角相 當小Μ不會增加T S距離。結果，可改進底部覆蓋比例而 維持所需要的薄膜沉稂速率，且此實施例最適於使得在實 際上的薄膜沉積技術中，此技術用於具有更高整合度的下 —代之稹體電路。 當兩腐蝕區5 0間的間隙相當大時，可導致在與間隙 相對處的基底3 0部位達到最大入射角》因此，腐蝕區 5 0間的間隙可設定到最小·理論上，此間隙不大於最深 腐蝕部位直徑之半· 爲了改進底部覆蓋比例，最好各最深腐蝕部位的直徑 不大於基底直徑·當各最深腐蝕部位的直徑等於或大於基 底3 0的直徑時，濺鍍粒子的入射角等於或大於該限制， 其方式如傳統技術中所述。但是，可考量除非使用的標地 物極大於基底，或基底極小於標地物，否則不會產生此種 狀態· 對應T S距離之最深腐蝕部位的直徑限制視將涵蓋之 細洞之方位比而定•圖5示各最深腐蝕部位的直徑及對應 T S距離的方位比間的關係· 如上所述，在製造2 5 6Mb i t或更大容量的積體 電路程序中，可在2或更髙方位比的細洞中導入薄膜沉稹 *在下文中，考量當最深腐蝕部位等於T S距離時在方位 比爲2的細洞3 0中沉稹的膜•如圖5所示，從最深腐蝕 部位出發的濺鍍粒子通過洞開口端303而到達端304 ，其在洞的底部，且與端3 0 3相對·另言之，在方位比 本紙張尺度適用中國國家梂率（CNS)A4規格（ 210X297公釐）_ 16 _ ' —————— 1^111111、tT— 111 ..... —^ (請先閲讀背面之注意事項一, 4'寫本頁) 、 經濟部中央標準局貝工消费合作社印裝 A7 _ B7 五、發明説明（14 ) 2之細洞中的薄膜沉積已限制爲：（最深腐蝕部位的直徑 )=(TS距離）》當最深腐蝕部位的直徑超過限制時， 底部覆蓋比例極低。在用於下一代裝置（其中方位比爲2 或更大）的薄膜沉稹技術中，最好設定最深腐蝕部位的直 徑等於或小於T S距離。 其次，簡單說明本實施例中其他部位的配置及整體操 作· 使用一可達到約1 0_βτ〇 r Γ之真空度的系統。在 薄膜沉積處理中，將如氬的放電氣體導入真空槽1中，因 此維持約0 . 0 3mTo r r的真空度，使得與上述低壓 力長距離濺鍍類似的方式可防止濺鍍粒子散射。 將一閛閥附在真空槽1之壁上。配置一可經由閘閥進 出基底30的移轉系統（圖中無）。一間隙（圖中無）經 由閘閥而與真空槽1並列· 應用上述方式配置陰極2。在本實施例中，加入用於 使陰極2繞中心軸轉動的轉動機構·使用轉動機構以在標 地物5上形成均勻腐蝕，且包含轉動軸，此釉連接轭 4 2 1的背面，且與中心軸2 0同軸，用於轉動該轉動軸 2 2 1的驅動源4 2 1 ·如上所述，在中心軸2 0附近之 標地物5部位包含在腐蝕區5 0中•結果，此部位可使得 當磁錐機構4轉動時其餘部位不會腐蝕。因此更進一步增 加標地物5的使用效率。 在基底夾持器3中配置一可經由靜電吸力吸收且夾持 基底3 0的機構，且一在薄膜沉稹程序期間可將基底3 0 ----------^------、tT-----ΊΦ (請先閲讀背面之注意事項& 寫本頁) 一 本紙張尺度適用中國國家標率（CNS ) A4規格（21〇X297公釐） -17 - 52^593 A7 B7五、發明説明（15 ) 加熱至一固定溫度的加熱機構。如需要 對基底3 0偏 經濟部中央標準局員工消费合作社印裝 壓的偏壓電源可連接基底夾持器3。 氣體導入系統7導入濺鍍時需要釋入真空槽1的氣體 ，且此系統包含一管路7 1 ，其連接一氣體圖柱（圖中無 )，一連接將管路的流量控制器，一閥等·當導入反應性 濺鍍裝置時，可導入反應氣體以釋放氣體混合· 陰極電源2 1對陰極2加入給定的負D C電壓，或濺 鍍裝置放電所需要的無線電頻率電壓。通常當標地物5由 金屬方式時，由加入負的D C電壓，且當標地物由介質等 製造時則加入無線電頻率電壓。當沒有偏壓時的真空槽及 基底夾持器接地，因此可將電壓維持在接地準位。加入陰 極2上的竜壓在這些組件及陰極2間產生電場，此電場可 期間濺鍍放電。 在本發明配置的濺鍍裝置中，由移轉系統（圖中沒有 顯示）將基底3 0經由閘閥（圖中沒有顯示）移轉入真空 槽1中，且放在基底夾持器3上•其次，應用陰極電源 2 1因此可對陰極2加壓*而操作氣體導入系統7使得氣 體可導入真空槽1中，所以可如上所述發生濺鍍放電的現 象。結果，濺鍍粒子從檫地物5放射且到達將沉積之基底 3 0，在此導入薄膜沉稹· 如上所述，在本實施例中，因爲在標地物5上形成小 直徑的腐蝕區5 0，穿透基底3 0之濺鍍裝置中心的入射 角相當相。因此，與傳統上使用的系統相比較，細洞的底 部覆蓋比例可明顯改進· ----------^------.訂-------^ (請先閲讀背面之注意事項一，心寫本頁) 一 各紙張尺度適用中國國家標準（CNS ) A4規格（210X：297公釐） 18 32^593 經濟部中央樣準局貝工消费合作杜印製 A7 B7五、發明说明（16 ) 其次，下文說明本發明的第二實施例。 圖6示本發明第二實施例之陰極配置的示意平面圖。 第二實施例中設定三個周圍部位磁場，如圖6所示。尤其 是，在第二實施例中，架構陰極2的磁鐵機構4包含N極 磁鐵432及S極磁鐵433，該S極磁鐵433固定在 一軛4 3 1上。N極磁鐵4 3 2的形狀包含一環狀外周圍 部位，此部位可沿著軛4 3 1的周圍端延長，及兩可延長 線性部位，因此可分割爲外周圍部位包圍的內部空間成爲 三個空間。S極磁鐵4 3 3位在外周圍部位內側之三個空 間的中心。 三個周圍部位磁場在標地物5上形成三個腐蝕區5 0 ，而彼此不交錯，如圖6所示•因此，在第二實施例中， 最深腐蝕部位的直徑減少，因此可如同第一實施例完成減 少入射角的效應•與第一實施例比較，設定三個周圍部位 磁塲的本實施例中，腐蝕區5 0的直徑在製造上可使其小 於具有兩個周圍部位磁場的例子》 可應用第一實施例類似的方式配置磁鐵機構4以外的 目的組件，因此在此省略其說明。 其次將說明本發明的第三實施例。圖7，8說明本發 明的第三實施例•圖7爲一平面圖•圖8爲截面圚•在第 一及第二實施例中，應用永久磁鐵配置磁鐵機構4 ·在第 三實施例中，由電磁鐵配置磁鐵機構β尤其是’磁鐵機構 4包含：平形線圈組件，5個（第一至第5 )個磁極組件 442，443，444，445，446，此磁極組件 -19 - 本纸浪尺度適用中國國家榡準（CNS )八4说格（210Χ297公釐） (請先閲讀背面之注意事項一吣豸夂頁吣 A7 B7 經濟部中央樣準局負工消費合作社印裝 五、 發明説明 (17 ) 1 固 定 在 線 BB 圈 組件4 4 1上且磁力線進入標地 物5 ，及場線 1 1 ΠΜ 圈 4 4 7 ( 其繞著線圈組件441)。 1 \ 線 圈 組 件4 4 1爲矩形的板狀組件，且 與標 地物5平 1 請 1 行 配 置 〇 5 個磁極組件442，443，4 4 4 ，4 4 5 先 閱 1 I t 及 4 4 6 爲帶板形配置其配置上將寬方向 指向 標地物5 讀 背 面 1 1 | 〇 由 焊 接 等 將磁極組件固定在標地物的弧形 上， 而使得其 之 注 意 1 1 1 長 度 方 向 與 矩形核心組件4 4 1的短側一致 。尤 其是，架 事 1 1 構 N 極 的 第 —及第五磁極組件442，44 6對 應地固定 \ 本 1 裝 I 在 線 圈 組 件 4 4 1之相對短側端上，且同樣 架構 N極的第 頁 •w 1 1 二 磁 極 組 件 4 4 4固定在與長側之中心部位 偏移 之處而向 1 1 著 第 五 磁 極 組件4 4 6 ·架構S極的第二磁 極組 件4 4 3 1 I 固 定 在 第 — 及第三磁極組件442，444 間的 中心部位 訂 I 9 且 同 樣 地 架構S極第四磁極組件4 4 5固 定在 —· τχ Afy 弟二及第 1 1 I 四 磁 極 組 件 444·446間的中心部位。 1 1 場 線 圈 4 4 7繞第一及第二磁極組件4 4 2 ，4 4 3 一. 1 1 第 二 及 第 三磁極組件443，444，第 三及 第四磁極 線 1 組件 4 4 4 及4 4 5，及第四及第五磁極組件4 4 5， 1 1 4 4 6 間 的 線圈組件部位·一方向的D C電 流供應場線圈 1 I 4 4 7 〇 結 果，N極之第一，第三磁極組件 4 4 2， 1 4 4 4 中 發 出的第一磁場之磁漏線固定S極 的第 二磁極組 1 1. 件 4 4 3 » 且從N極之第三*第五磁極組件 4 4 4， 1 1 4 4 6 發 出 的磁場的第二磁漏線固定S極之 第四 磁極組件 1 1 4 4 5 〇 1 1 如 圖 7 所示，在線圈組件4 4 1的兩側 配置 8個輔助 1 1 本紙張尺度適用中國國家標準（CNS Μ4洗格（210X297公釐）_ 20 經濟部中央橾準局負工消费合作社印裝 A7 B7 五、發明説明（18) 核心組件 451 ’ 452 ’ 453 ’ 454，455， 456，457及458。8個輔助核心組件451， 452，453，454，455，456 *457 及 4 5 8爲與四方形之一區類似的板形。且間隙形中心磁極 組件4 6 0連續於區域的樞撐部位· 在8個辅助核心組件451，452，453， 454，455，456，457 及 458 中四個（第一 至第四）輔助核心組件451，452，453，454 的半徑大致上等於第一或第三磁極組件4 4 2或4 4 4及 第二磁極組件4 4 3間的距離，且第五至第八輔助核心組 件445，456，457及458的半徑大致上等於第 三或第五磁極組件4 4 4或4 4 6及第四磁極組件4 4 5 間的距離。在各輔助核心組件451，452，453 * 454，455，456，457 及 458 上繞一場線圈 4 4 7，使得磁力的弧形磁漏線跨周圍4 5 9及中心磁極 組件4 6 0 · 如圖9所示，配置第一至第四輔助核心組件451， 452，453，454使得其中心磁極組件460位在 第二磁極組件4 4 3兩側附近，且其周圍磁極組件4 5 9 併有第一及第三磁極組件4 4 2及4 4 4，而具有周圍形 狀。同樣地，第五至第八輔助核心組件455，456， 4 5 7及4 5 8的配置可令其中心磁極組件4 6 0位在第 四磁極組件4 4 5之兩側附近，而其周圍磁極組件4 5 9 併有第三及第五磁極組件4 4 4，4 4 6，且具有周圍形 本紙張尺度適用中國國家揉準（CNS ) A4規格（210X297公釐）~~ ' ~ Z1 - ----------^------1T----->10 ί < (請先閲讀背面之注意事項再填寫本頁) A7 B7 經濟部中央樣準局貝工消費合作社印裝 五、發明説明（l9 ) 狀。 在此配置中，由磁極組件的設定之磁力的弧形線形成 周圍形狀，且兩周圍磁場並列•當標地物5同軸而使得在 第二及第三磁極組件4 4 3，4 4 4間的中心部位與中心 軸2 0 —致時，大致上等於圖2之磁鐵機構4之陰極2的 配置可由電磁鐵達成。而且在第三實施例中，當磁鐵機構 4繞中心軸2 0轉動時，可完成均勻腐蝕且可增加標地物 5的使用效率。 在使用電磁鐵的第三實施例中，磁場的分佈可經由控 制對應供應場核心4 4 7的電流而調整，使得可進行薄膜 沉稹厚度的分配。此將參考圚9加以說明•圖9示一應用 例子，其中電流控制機構用於獨立控制加到場線圈的電流 ，且加至圖7及8的第三實施例中。 電流控制機構的例子包含：例如供應D C電流予場線 圈447A，447B， .... ，447L的DC電流 ，電流調整器4 4 9，其可對應地連接從D C電源4 4 8 至場線圈447A，447B， ....447L的電流 供應電流；及一可程式控制器4 5 0，此控制器控制調整 器449，以調整供應場線圈447A，447B，.. ..447L的電流準位。 圖7，8中說明使用陰極2之薄膜沉稹的程序•當判 斷基底3 0周圍之薄膜沉稹速率小於中心部位之薄膜沉積 速率且薄膜沉稹厚分佈的平面均勻性不足時，例如，供應 繞在8個輔助核心組件451 * 452，453，454 本紙張尺度逋用中國國家標準（CNS > A4規格（2丨0X297公釐）_ 22 一 ----------^-------ίτ------0 (請先閲讀背面之注意事項，，ί寫本頁) (I The size of the paper for the side-bound book is applicable to the Chinese National Standard (CNS) A4 (210X297 mm), -11 A7 B7 Printed by the Beigong Consumer Cooperative of the Central Bureau of Economic Development of the Ministry of Economic Affairs 5. Description of the invention (9) 1 I mm At the position (the diameter of which is 140 mm), the incident angle θ of the sputtered particles colliding near the center of the substrate 301 When the TS distance is 341 mm, it is approximately 11.6 〇〇1 I 锖1 I cf. 9 When using a large-sized substrate 3 0 (diameter 3 0 0 read II read 1 I τη m), the landmark can be enlarged so it can have a size similar to the above. Back 1 I of 1 As shown in Figure 1 8 (b) shown »When the landmark is slightly larger than the base 3 0, and the diameter of the sleeve 1 I is 3 14m m, the most important item will be produced at the position corresponding to the diameter of 1 6 3m m 1 1 I deep corrosion site if used For the TS distance of the above-mentioned structure, in the center appendix II, the incident angle 0 of near-impact sputtering particles is 1 3 5 〇〇 In order to set the Page 1 1 1 8 (a) The same angle of incidence and a similar bottom coverage ratio »1 1 Therefore, it is necessary to increase the T S distance to 3 9 7 m m. When the T S distance is increased by 1 1 and this is a large value, the film deposition rate is reduced to a certain low value. At this value, it is practically impossible to improve the film deposition. 1 I In order to comply with the above state, for example, as shown in FIG. 18 (d), set the TS distance to 3 0 3 mm (adjusted by 1 to the diameter of the substrate 1 1) in the range of 1 1 I real m, so that it is in the center The incident angle θ in the vicinity is approximately 15.0 001, that is, the incident angle increases to (15. 0/1 1 1 1 .3) = 1.3 times β 1 5 as shown in FIG. 18 (b). The angle of incidence is equal to the traditional size (1 1 or 2 6 9mm m) (the diameter of the deepest corroded part is 1 4 0mm m). The landmark 5 is used and the TS distance is 2 6 0 mm (Figure 18 (C) 1) The result is obtained. The configuration is the same as the sputtering result of FIG. 1 8 »1 1 and the hole for the aspect ratio 2 has a bottom shading ratio of about 2 8 to 3 5% 1 1 1 as above It is stated that when using low pressure and long distance sputtering, the traditional configuration is very good. The paper size is applicable to China ’s national standard (CNS) A4 specification (210X297 mm), 〇-12-Employee Consumer Cooperative of the Ministry of Economic Affairs Printed buckle £ 593 A7 _B7__ 5. Description of the invention (10) It is difficult to cover the bottom of the bottom, but still maintain the required IM mile, and. It can meet the requirements of substrate enlargement. SUMMARY OF THE INVENTION In order to solve the above problems, the present invention provides a sputtering apparatus including:-a vacuum tank with a pump system; a landmark in the vacuum tank; and a magnet mechanism, the magnet mechanism sets the surface of the landmark The magnetic field on the surface — facing the substrate of the ground object, sputtering the landmark to obtain ions from the magnetic field of the magnet mechanism, so a thin film is deposited on the surface of the substrate; wherein the magnet mechanism is removed from the landmark The magnetic flux leakage line emitted by the surface part of the object and entering another part of the surface of the landmark, and also contains a plurality of magnetic fields of surrounding parts, each magnetic field of the surrounding parts is formed by the range covered by the magnetic flux leakage A surrounding shape is formed on the surface of the landmark * so that a plurality of corrosion areas are formed on the surface of the landmark by the magnetic fields of the surrounding parts that do not intersect. When the magnetic mechanism corresponding to the landmark is quite stable, each corrosion area has Around the shape. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described. FIG. 1 shows a sputtering apparatus of a first embodiment of the present invention. The cat plating apparatus of FIG. 1 includes: a vacuum tank 1 having a pump system 11, A cathode 2 and a substrate holder 3, the holder 3 is configured to be in a relative state in the vacuum tank;-gas guide system 7, can introduce gas into the vacuum tank 1, a cathode power supply 2 1 can add voltage Cathode 2; etc. · This paper button is applicable to China National Standard Rate (CNS) 8 4 secrets (21GX297mm) ~~ (please read the precautions on the back to write this page)-installed. Lined. A7 B7 Ministry of Economic Affairs Printed by Beigong Consumer Cooperative of the Central Bureau of Customs 5. Description of the invention (11: 1 I The feature of the device in Figure 1 is the configuration of the cathode 2. Figure 2 »Figure 3 shows the configuration of the cathode 2 in the device of 1 1. The schematic perspective view of FIG. 2 shows the configuration of the magnet mechanism 1 and the configuration of the magnetic field of the surrounding part of FIG. 3 is shown first. 1 1 »The magnetic field of this surrounding part is placed on the landmark by the magnet mechanism 4 of FIG. 2 Produces 〇1 I The cathode 2 includes a magnetic suspect mechanism 4 and a landmark 5. The landmark can be placed in front of the reading back 1 I The magnet mechanism 4 «Cathode power supply 2 1 Attention to apply a given voltage to the cathode 1 1 I 0 Features of the embodiment In order to select the surrounding parts on the surface of the landmark, select the magnetic matters and then shoulder the 1 I field »and form a corrosion area with the shape of the surrounding parts» Therefore, its copybook 1 attack will not be interlaced with each other 0 Page 1 1 Now, the magnet mechanism is specifically explained 4 〇 Magnet mechanism 4 includes a disk-shaped yoke 1 1 4 2 1, an N-pole magnet 4 2 2 and two S-pole magnets 4 2 3 4 2 4 1 | 〇 These magnets are fixed on the yoke 4 2 1 〇 like a circle 2 ♦ The shape of the N pole magnet I 4 2 2 includes-* the outer peripheral part of the ring, this part is along the yoke 1 1 I 4 2 1 the peripheral end along the length of 9 and a linear part, this part is extended so 1 1 I is divided into the inner space enclosed by the outer peripheral part, this position deviates from the middle 1 I line 1 center • One of the two S-pole magnets is the first S-pole magnet 4 2 3 This S-pole magnet is located in the center of the large space formed by the linear parts, and the other — S pole is the second 1 1 S pole 4 2 4. It is located in the center of the small space • Central axis 2 0 々 思 m Section — 1 | S pole magnet 4 2 3 and N pole magnet 4 2 2 gap • 1 | As shown in Figure 3 »Based on this 05 Magnet mechanism 4 »Set two different sizes of magnetic field 0 on the surface of the landmark 1 1 I 5 especially from the N 1 1 pole magnet 4 2 2 and reaching the first S pole magnet 4 2 3 The arc of the magnetic force forms a circular shape with a 1 line »Therefore, the magnetic field of the first circumferential part can be set above the 1st digit of the S pole magnet 4 3 2 around the 1 1st digit, and starting from the N pole magnet 4 2 2 1 1 paper size Applicable to the Chinese National Standard (CNS) A4 specification (210X297mm) _ 14 A7 B7 Printed by the Central Ministry of Economic Affairs Bureau of Pongong Consumer Cooperative V. Invention description (l2) and reach the second S pole magnet 4 2 The arc-shaped magnetic leakage line of the magnetic force of 4 forms a circle. Therefore, the magnetic field of the second surrounding part above the surrounding area of the second S-pole magnet 4 2 4 • has a surrounding shape and does not intersect each other as shown in FIG. 3 The two corrosion areas 50 are formed by the magnetic fields of the two surrounding parts. The magnet mechanism 4 of this embodiment is rotated by the rotating mechanism 22, which will be described below. Actually, when the magnet mechanism 4 is static, the above-mentioned selective corrosion region 50 can be formed. When the magnet mechanism 4 rotates, the corrosion area 50 line rotates around the central axis, and thus the corrosion area 50 is distributed over substantially the entire surface of the landmark 5 (forming a single area). When the corrosion area 50 having the shape of the surrounding part is selected and formed on the landmark 5 without intersecting with each other as described above, the diameter of the deepest corrosion part of each corrosion zone 50 (when the deepest corrosion part is not circular, The shortest line connecting the two points on the surrounding parts) is always smaller than the diameter of the deepest corroded part caused by the Futong effect * wherein a single corrosion zone is formed in the traditional technology 50. When the diameter of the deepest corroded part is small, The incident angle of the sputtered particles is small without increasing the TS distance. Refer to Figure 4 for more details. Fig. 6 is a schematic cross-sectional diagram illustrating the function of the embodiment of Figs. 1-3 " In the shape of the corrosion area in the landmark 5 indicated by the hatched area in FIG. 4, when the substrate 30 is seen from the deepest corrosion position The position of the surface part of the substrate 30 that forms the maximum incidence angle can be made coaxial with the center part of the deepest corroded part of the peripheral part, as shown in FIG. 18. The incident angle 0 of the splashed ammonium particles from the deepest erosion site is obviously smaller than that shown in Fig. 18 '. A single etched area is formed in Fig. 18. This paper scale is applicable to the Chinese National Standard (CNS) A4 specification (210X297mm) _ 15 _ (please read the precautions on the back to write this page) • Packing. Threading. Printed by the Central Bureau of Economic Affairs of the Ministry of Economic Affairs, Beigong Consumer Cooperative.褽 32 ^ 593 A7 __B7 V. Description of the invention (i3) As described above, according to the configuration of the embodiment, the incident angle of the sputtered particles is relatively small. M does not increase the TS distance. As a result, the bottom coverage ratio can be improved to maintain the required thin film sink rate, and this embodiment is most suitable for making the actual thin film deposition technology, which is used for lower-substrate circuit with higher integration . When the gap between the two corrosion areas 50 is quite large, it can cause the maximum incidence angle to be reached at the position of the substrate 30 opposite to the gap. Therefore, the gap between the corrosion areas 50 can be set to a minimum. Theoretically, this gap does not More than half of the diameter of the deepest corroded part · In order to improve the bottom coverage ratio, the diameter of each deepest corroded part is preferably not greater than the diameter of the substrate · When the diameter of each deepest corroded part is equal to or greater than the diameter of the substrate 30, the incident angle of the sputtered particles The method is equal to or greater than this limit as described in the conventional technology. However, it can be considered that unless the landmark used is extremely larger than the base, or the base is extremely smaller than the landmark, this state will not occur. The diameter limit of the deepest corroded part corresponding to the TS distance depends on the azimuth ratio of the fine holes to be covered Figure 5 shows the relationship between the diameter of each of the deepest corroded parts and the azimuth ratio corresponding to the TS distance. As mentioned above, in the process of manufacturing an integrated circuit of 2 5 6Mb it or more, the azimuth can be 2 or higher. Introduce thin film sinking into the fine holes of the ratio * In the following, consider the film that sinks into the thin holes 30 in the azimuth ratio of 2 when the deepest corrosion site is equal to the TS distance • As shown in Figure 5, from the deepest corrosion site The sputtered particles pass through the opening end 303 of the hole to reach the end 304, which is at the bottom of the hole and is opposite to the end 303. In other words, the Chinese national frame rate (CNS) A4 specification (210X297 %) _ 16 _ '—————— 1 ^ 111111, tT-111 ..... — ^ (please read the first note on the back, 4' to write this page), Bei Gong, Central Bureau of Standards, Ministry of Economic Affairs Printed by the consumer cooperative A7 _ B7 V. Description of the invention (14) 2 in the fine hole The thin film deposition has been limited to: (diameter of the deepest corroded part) = (TS distance) "When the diameter of the deepest corroded part exceeds the limit, the bottom coverage ratio is extremely low. In the thin-film sinking technology used in next-generation devices (where the azimuth ratio is 2 or greater), it is best to set the diameter of the deepest etched portion to be equal to or less than the T S distance. Next, the arrangement and overall operation of other parts in this embodiment will be briefly described. A system that can achieve a vacuum degree of about 10_βτ〇r Γ is used. In the thin film deposition process, a discharge gas such as argon is introduced into the vacuum tank 1, and thus the vacuum degree of about 0.03 mTorr is maintained, so that the sputtering particles can be prevented from scattering in a manner similar to the above-mentioned low-pressure force long-distance sputtering. Attach a valve to the wall of the vacuum tank 1. A transfer system (not shown in the figure) that can enter and exit the substrate 30 via a gate valve is provided. A gap (not shown in the figure) is juxtaposed with the vacuum tank 1 via the gate valve. The cathode 2 is arranged in the above manner. In this embodiment, a rotating mechanism for rotating the cathode 2 about the central axis is added. The rotating mechanism is used to form uniform corrosion on the landmark 5 and includes a rotating shaft. This glaze is connected to the back of the yoke 4 2 1, and Coaxial with the central axis 2 0, the driving source 4 2 1 for rotating the rotating axis 2 2 1 · As mentioned above, the landmark 5 near the central axis 20 is included in the corrosion zone 50 • As a result, this The parts can prevent the remaining parts from corroding when the magnetic cone mechanism 4 rotates. Therefore, the use efficiency of the landmark 5 is further increased. The substrate holder 3 is provided with a mechanism that can absorb and hold the substrate 30 by electrostatic attraction, and a substrate 30 can be held during the film sinking process ---------- ^ --- --- 、 tT ----- ΊΦ (please read the precautions on the back & write this page first) A paper size is applicable to China National Standard (CNS) A4 specification (21〇X297mm) -17-52 ^ 593 A7 B7 5. Description of the invention (15) Heating mechanism heated to a fixed temperature. If necessary, the substrate 30 can be biased to the substrate holder 3 by biasing the power supply printed by the Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs. The gas introduction system 7 introduces the gas that needs to be released into the vacuum tank 1 during sputtering, and this system includes a pipeline 7 1, which is connected to a gas graph column (not shown in the figure), and a flow controller that connects the pipeline, a Valves, etc. When introducing a reactive sputtering device, a reactive gas can be introduced to release gas mixture. Cathode power supply 21 adds a given negative DC voltage to the cathode 2, or a radio frequency voltage required for the sputtering device to discharge. Generally, when the landmark 5 is made of metal, a negative DC voltage is added, and when the landmark is made of a medium, etc., a radio frequency voltage is added. When there is no bias, the vacuum chamber and the substrate holder are grounded, so the voltage can be maintained at the ground level. The high voltage added to the cathode 2 generates an electric field between these components and the cathode 2, and this electric field can be discharged during sputtering. In the sputtering device configured by the present invention, the substrate 30 is transferred into the vacuum tank 1 via a gate valve (not shown in the figure) by a transfer system (not shown in the figure), and placed on the substrate holder 3 Secondly, the cathode power source 2 1 is applied so that the cathode 2 can be pressurized * and the gas introduction system 7 is operated so that the gas can be introduced into the vacuum chamber 1, so that the phenomenon of sputtering discharge can occur as described above. As a result, the sputtered particles radiate from the sassafras 5 and reach the substrate 30 to be deposited, where they are introduced into the thin film Shen Zhen. As described above, in this embodiment, because a small-diameter corrosion area is formed on the landmark 5 5 0, the angle of incidence through the center of the sputtering device of the substrate 30 is quite similar. Therefore, compared with the traditionally used system, the bottom coverage ratio of the fine hole can be significantly improved. ---------- ^ ------. Order ------- ^ (please Read the precautions on the back first, and write this page carefully.) Each paper size applies to the Chinese National Standard (CNS) A4 specification (210X: 297 mm) 18 32 ^ 593 Printed by the Cooperative Bureau of the Ministry of Economic Affairs of the Ministry of Economic Affairs A7 B7 V. Description of the invention (16) Next, the second embodiment of the present invention is explained below. Fig. 6 is a schematic plan view showing the configuration of the cathode in the second embodiment of the present invention. In the second embodiment, three surrounding magnetic fields are set, as shown in FIG. 6. In particular, in the second embodiment, the magnet mechanism 4 constituting the cathode 2 includes an N-pole magnet 432 and an S-pole magnet 433, and the S-pole magnet 433 is fixed to a yoke 4 3 1. The shape of the N-pole magnet 4 3 2 includes a ring-shaped outer peripheral part, which can be extended along the peripheral end of the yoke 4 3 1, and two extendable linear parts, so the internal space surrounded by the outer peripheral part becomes three Spaces. The S-pole magnets 4 3 and 3 are located in the center of the three spaces inside the outer peripheral parts. The magnetic fields of the three surrounding parts form three corrosion areas 50 on the landmark 5 without intersecting each other, as shown in FIG. 6. Therefore, in the second embodiment, the diameter of the deepest corrosion part is reduced, so it can be as the first One embodiment completes the effect of reducing the incident angle. In comparison with the first embodiment, in this embodiment where three surrounding magnetic fields are set, the diameter of the corrosion zone 50 can be made smaller than that with two surrounding magnetic fields. Example >> A target component other than the magnet mechanism 4 can be configured in a similar manner to the first embodiment, and therefore its description is omitted here. Next, a third embodiment of the present invention will be explained. 7 and 8 illustrate a third embodiment of the present invention. FIG. 7 is a plan view. FIG. 8 is a sectional view. In the first and second embodiments, a permanent magnet is used to configure the magnet mechanism 4. In the third embodiment, The magnet mechanism β is configured by an electromagnet, especially the 'magnet mechanism 4 includes: flat coil assembly, 5 (first to 5th) magnetic pole assemblies 442, 443, 444, 445, 446, this magnetic pole assembly -19-this paper wave The standard is applicable to the Chinese National Standard (CNS) 八四 说 格 (210Χ297mm) (Please read the notes on the back first A7 B7 Printed by the Central Prototype Bureau of the Ministry of Economic Affairs of the Consumer Labor Cooperatives. 5. Description of the invention (17) 1 is fixed on the line BB coil assembly 4 4 1 and the magnetic field line enters the landmark 5, and the field line 1 1 ΠΜ coil 4 4 7 (which surrounds the coil assembly 441). 1 \ The coil assembly 4 4 1 is rectangular Plate-shaped components, and level with the landmark 5 1 Please configure one row 〇5 magnetic pole components 442, 443, 4 4 4, 4 4 5 First read 1 I t and 4 4 6 is with a plate-shaped configuration Point to the landmark in the width direction 5 Read the back 1 1 | 〇By welding etc. The magnetic pole assembly is fixed on the arc of the landmark, so that the length of 1 1 1 is consistent with the short side of the rectangular core assembly 4 4 1. In particular, the 1st and 5th of the N pole of the 1st configuration The magnetic pole assemblies 442, 44 6 are fixed correspondingly. This 1 is installed on the relatively short side end of the coil assembly 4 4 1 and the same structure of the N pole page • w 1 1 Two magnetic pole assemblies 4 4 4 are fixed on the long side The center part of the center is shifted toward 1 1 toward the fifth pole assembly 4 4 6. The second pole assembly 4 4 3 1 I of the S pole is fixed at the center between the-and third pole assemblies 442, 444. I 9 and the same structure S pole fourth magnetic pole assembly 4 4 5 is fixed at the center of-τχ Afy brother 2 and the first 1 1 I four magnetic pole assembly 444 · 446. 1 1 field coil 4 4 7 around the first and Second magnetic pole assembly 4 4 2, 4 4 3 1. 1 1 Second and third magnetic pole assembly 443, 444, third and fourth magnetic pole line 1 assembly 4 4 4 and 4 4 5 and fourth and fifth magnetic pole Components 4 4 5, 1 1 4 4 6 coil component parts · 1 The DC current is supplied to the field coil 1 I 4 4 7. As a result, the first magnetic pole of the N pole and the third magnetic pole assembly 4 4 2 and the magnetic leakage line of the first magnetic field emitted from the 1 4 4 4 fix the second magnetic pole of the S pole Group 1 1. Pieces 4 4 3 »and the third magnetic field from the N pole * fifth magnetic pole assembly 4 4 4, 1 1 4 4 6 The second magnetic flux leakage line fixes the fourth pole assembly of the S pole 1 1 4 4 5 〇1 1 As shown in FIG. 7, 8 auxiliary parts are arranged on both sides of the coil assembly 4 4 1 1 1 This paper size applies to the Chinese national standard (CNS Μ4 wash grid (210X297 mm) _ 20 Central Ministry of Economic Affairs Printed and printed A7 B7 by Bureau Cooperative Consumer Cooperative V. Invention description (18) Core components 451 '452' 453 '454, 455, 456, 457 and 458. 8 auxiliary core components 451, 452, 453, 454, 455, 456 * 457 and 4 5 8 are plate shapes similar to one of the squares. And the gap-shaped central magnetic pole assembly 4 6 0 continues at the pivoting area of the area. • Four (first to fourth) auxiliary cores among the eight auxiliary core assemblies 451, 452, 453, 454, 455, 456, 457 and 458 The radius of the components 451, 452, 453, 454 is substantially equal to the distance between the first or third magnetic pole component 4 4 2 or 4 4 4 and the second magnetic pole component 4 4 3, and the fifth to eighth auxiliary core components 445, The radii of 456, 457 and 458 are approximately equal to the distance between the third or fifth pole assembly 4 4 4 or 4 4 6 and the fourth pole assembly 4 4 5. A field coil 4 4 7 is wound around each auxiliary core component 451, 452, 453 * 454, 455, 456, 457 and 458, so that the arc-shaped magnetic leakage line of the magnetic force spans the surrounding 4 5 9 and the central magnetic pole component 4 6 0 · as As shown in FIG. 9, the first to fourth auxiliary core components 451, 452, 453, and 454 are arranged such that the central magnetic pole component 460 is located near the two sides of the second magnetic pole component 4 4 3, and the surrounding magnetic pole components 4 5 9 have The first and third magnetic pole assemblies 4 4 2 and 4 4 4 have surrounding shapes. Similarly, the arrangement of the fifth to eighth auxiliary core components 455, 456, 4 5 7 and 4 5 8 can make the central magnetic pole component 4 6 0 to be near both sides of the fourth magnetic pole component 4 4 5 and around The magnetic pole assembly 4 5 9 has the third and fifth magnetic pole assemblies 4 4 4, 4 4 6 and has a surrounding shape. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) ~~ '~ Z1- ---------- ^ ------ 1T ----- > 10 ί < (Please read the precautions on the back before filling out this page) A7 B7 Central Bureau of Standards Printed by Beigong Consumer Cooperative V. Description of invention (l9). In this configuration, the arc line of the set magnetic force of the pole assembly forms the surrounding shape, and the two surrounding magnetic fields are juxtaposed • When the landmark 5 is coaxial, so that between the second and third pole assemblies 4 4 3, 4 4 4 When the central part of φ corresponds to the central axis 20, the arrangement of the cathode 2 of the magnet mechanism 4 shown in FIG. 2 can be achieved by an electromagnet. Furthermore, in the third embodiment, when the magnet mechanism 4 rotates around the central axis 20, uniform corrosion can be completed and the use efficiency of the landmark 5 can be increased. In the third embodiment using an electromagnet, the distribution of the magnetic field can be adjusted by controlling the current corresponding to the supply field core 4 47, so that the distribution of the thickness of the film sinker can be performed. This will be explained with reference to FIG. 9. FIG. 9 shows an application example in which the current control mechanism is used to independently control the current applied to the field coil, and is added to the third embodiment of FIGS. 7 and 8. Examples of current control mechanisms include: for example, supplying DC current to the field coils 447A, 447B,..., 447L of DC current, a current regulator 4 4 9, which can be correspondingly connected from the DC power supply 4 4 8 to the field coil 447A , 447B, ... 447L current supply current; and a programmable controller 4 5 0, this controller controls the regulator 449 to adjust the current level of the supply field coil 447A, 447B,... 447L. Figures 7 and 8 illustrate the procedure of using the thin film sinking of the cathode 2. When it is judged that the thin film sinking rate around the substrate 30 is less than the film deposition rate at the center and the planar uniformity of the thin film sinking thickness distribution is insufficient, for example, supply Wrapped around 8 auxiliary core components 451 * 452, 453, 454. The paper standard uses the Chinese National Standard (CNS> A4 specification (2 丨 0X297mm) _ 22 一 ---------- ^- ------ ίτ ------ 0 (Please read the notes on the back first, and write this page) (
322bdB A7 B7 經濟部中*樣準局員工消费合作社印製 五、發明説明（2〇 ) ，455，456，457及458上的場線圈447之 電流的準位經控制因此可相當上升時。由如使用一閘流管 等的電流調整器4 4 9等可在固定期間打開及關斷電流供 應，且可依據來自可程式控制器4 5 0的信號調整開/關 周期。 供應繞在輔助核心組件451，452，453， 454，455，456，457 及 458 上之 8 個場線 圈4 4 7的電流之周期可比繞在圚7中線圈組件4 4 1上 的四個場線圈4 4 7上的電流周期還要長。此使得由於輔 助核心組件451 ，452，453，454，455， 4 5 6，4 5 7及4 5 8所產生的磁力之磁漏線的磁通量 密度相當高，因此增加標地物5周圍的腐蝕性。結果，基 底3 0周圍的薄膜沉積速率使得改進，且增加薄膜沉積厚 分佈之平板的均勻性。 供應電流準位的獨立控制可依據下列方式導入：設定 兩周圍部位磁場的兩電磁鐵群獨立控制，或所有的電磁鐵 均獨立控制。只要至少兩群可獨立控制，則有可能加入任 何種類的磁場調整功能。 在上述實施例中，周圍部位磁場數爲二或三。另外， 該數目可爲四或5 ·當周圍部位磁場數較大時，一般在同 一 T S距離之濺鍍粒子的入射角較小。因此，大董的周圍 部位磁場最好可改進底部覆蓋比例。 轉動機構22可在磁鐵機構4上轉動標地物5·磁鐵 機構4的中心軸2 0可偏離標地物5 —段距離，使得磁鐵 請 先 閲 讀 背 之 注 項 本衣 頁 訂 線 本紙張尺度適用中國國家標準（CNS ) Α4規格（210X297公釐） -23 - 經濟部中央標準局負工消费合作社印製 S22593 A7 ___ _B7_ 五、發明説明（2l ) 機構4可繞標地物5的中心軸轉動。 在此說明書中："周圍形狀"一詞具有廣泛的意義， 且具有圓形，橢圓形，卵形，多角形，及不均勻（如波浪 形）。周圍不需要形成完整的迴路，且可包含任何不完全 部份•甚至在周圍腐蝕蓝5 0中周圍部位磁場具有部份中 斷部位者仍可使用，如沉積膜中不均勻厚度。 最深腐蝕部位不見得需要線性外形，且可爲帶形或一 實質的寬邊。從最高部位到最淺部位的最好可作爲最深腐 蝕部位•最深腐蝕部位爲一觀念上的部位，可作爲決定腐 蝕區的部位，此對薄膜沉積產生最深的影響，且適於依據 薄膜沉積上的影響度決定。 腐蝕茵置於可由磁場產生腐蝕之部位·一極少量的離 子可擴散至腐蝕區外側，且到達可透過一標地物的基底上 。隨著時間的經過，因此，可在腐蝕區外側期間極淺的腐 蝕•但是，此腐蝕並不會影響薄膜沉稹的狀態，因此可判 斷此腐蝕並非實質上的腐蝕•當假設在腐蝕區中的平均腐 蝕速率爲1 0 0%時*腐蝕率爲5%或更小的區域被認定 並非一實際腐蝕區· 其次，說明第一實施例的例子•在第一實施例中，在 下列狀態中導入漉鍍： 標地物直徑：314mm TS距離：303mm 基底直徑：3 0 0 mm 本紙張尺度逋用中國國家標车（cns> a4規格（2iox297公釐〉_ 24 _ " ----------^------1T------0 (請先閲讀背面之注意事項ί /寫本頁) ( A7 B7 經濟部中央標準局貝工消费合作社印製 五、發明说明（22 ) 加到陰極的電壓：二600V Ν極磁鐵之線性部位偏離（圖2的距離直徑）：40 0 mm » 第一最深腐蝕部位的直徑（圖4之Φ1) :200mm， 第二最深腐蝕部位的直徑（圖4之Φ2) :100mm， 磁鐵機構的轉動速度：200 rmp， 基底的溫度：300 °C， 標地物的材料：鈦，以及 放電氣體：氬 結果，可確定可在底部覆蓋比例4 0至4 5%下於方 位比2的細洞中導入薄膜沉積。在此例子中，薄膜沉積率 爲每分鐘1，000埃* 如上所述，依據本發明，因爲可對於甚大的基底改進 底部覆蓋比例，而維持所需要的薄膜沉稹速率，所以本發 明最適於用於下一代稹體電路之薄膜沉稹技術。 圖式之簡單說明 圖1爲本發明第一實施例中濺鍍裝置的示意圖。 圖2爲圖1裝置中陰極配置及磁鐵機構的配置之示意 透視圖· 圖3爲圖1裝置中陰極配置及周圍部位磁場配置的示 意透視圖，該周圍部位磁場在磁鐵機構之標地物上產生β 圖4爲沿圓2之線X—X看去之圖2實施例的功能之 本紙張尺度適用中國國家揉準（CNS > ( 210X297公釐）_ _ 請 先 閲 讀 背 ii 項 孑一 社、 寫 本 頁 裝 訂 線 經濟部中央標準局貝工消費合作社印裝 A7 _____B7_ 五、發明説明（23) 示意截面圖· 圖5示各最深腐蝕部位直徑的關係及T S距離的方位 比。 圖6爲本發明第二資施例中陰極配置的示意平面圖· 圚7示本發明第三實施例的平面圖。 圖8示本發明第三實施例的截面圖。 圖9用於說明一應用例子，其中用於獨立控制供應場 線圈的電流控制機構加入圖7，8的第三實施例中。 圖1 0之示意圖說明傳統濺鍍裝置例子中的準直濺鍍 裝置，其中已改進底部覆蓋比例。 圖1 1之示意圖說明另一傳統濺鍍裝置之低壓力長距 離濺鍍裝置· 圖1 2說明一在使用圚1 1之裝置時在大基底上薄膜 沉積中所產生的一項問題，及在裝置中標地物及基底的部 份視圖。 圖13(A) ，13(B)說明如圆12之方式，使 用圖1 1之裝置的大基底上薄膜沉稹中所產生的問題，且 截面圓示基底及周圍部位中心附近的底部覆蓋比例。 圓1 4示與低壓力長距離濺鍍有關的實驗數據，且指 示在該壓力及T S距離下底部覆蓋比例的相關性之數據。 圖1 5示與低壓力長距離濺鍍有關的實驗數據，且在 該壓力及T S距離下指示所得到薄膜之薄板電阻相關性的 數據· 圖1 6同樣地顯示與低壓力長距離濺鍍有關的數據， 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） ~ -Zb - ^1裝 訂 I J..4. (請先閲讀背面之注意事項再填寫本貰) ίί 2 2 t>dS A7 B7 五、發明说明（24) 及當TS距離爲3 4 Omm時，指示底部覆蓋比例及方位 比間的關係之數據· 圖17同樣地顯示與低壓力長距離濺鍍有關的數據， 及當T S距離爲2 6 0mm時，指示底部覆蓋比例及方位 比間的關係之數據。 圖1 8爲底部覆蓋比例及薄膜沉積率上基底擴大尺寸 效應的研究結果。 圖1 9示最深腐蝕部位的周圔形狀，及在傳統裝置中 使用之磁鐵機構的示意透視圖。 圖2 0示最深腐蝕部位的周圍形狀，及在傳統裝置中 使用之陰極的示意透視圖· ---------「t-- (請先閲讀背面之注意事項再填寫本頁) 經濟部中央橾準局員工消費合作社印製 本纸張尺度適用中國國家揉準（CNS ) A4規格（210X297公釐） -27 -322bdB A7 B7 Printed by the Ministry of Economic Affairs * Sample Standards Bureau Consumer Cooperative. V. Invention description (20), the current level of the field coil 447 on 455, 456, 457 and 458 can be controlled so that the current level can be increased considerably. The current regulator 4 4 9 such as the use of a thyristor can turn on and off the current supply during a fixed period, and the on / off period can be adjusted according to the signal from the programmable controller 4 5 0. The supply of eight field coils 4 4 7 wound on the auxiliary core components 451, 452, 453, 454, 455, 456, 457 and 458 has a period of current comparable to the four fields wound on the coil component 4 4 1 in the coil 7 The current cycle on the coil 4 4 7 is longer. This makes the magnetic flux density of the magnetic flux leakage lines due to the magnetic force generated by the auxiliary core components 451, 452, 453, 454, 455, 4 5 6, 4 5 7 and 4 5 8 quite high, thus increasing the corrosion around the landmark 5 Sex. As a result, the deposition rate of the thin film around the substrate 30 is improved, and the uniformity of the slab with a thick distribution of thin film deposition is increased. The independent control of the supply current level can be introduced according to the following methods: the two electromagnet groups that set the magnetic field around the two parts are independently controlled, or all the electromagnets are independently controlled. As long as at least two groups can be controlled independently, it is possible to add any kind of magnetic field adjustment function. In the above embodiment, the number of magnetic fields in the surrounding area is two or three. In addition, the number can be four or 5. When the number of magnetic fields in the surrounding parts is large, the incident angle of the sputtered particles at the same T S distance is generally small. Therefore, it is better for the magnetic field around Da Dong to improve the bottom coverage ratio. The rotating mechanism 22 can rotate the landmark 5 on the magnet mechanism 4. The central axis 20 of the magnet mechanism 4 can deviate from the landmark 5 by a certain distance, so that the magnet please read the note on the back. Applicable to the Chinese National Standard (CNS) Α4 specification (210X297 mm) -23-Printed by the Central Standards Bureau of the Ministry of Economic Affairs of the Negative Work Consumer Cooperative S22593 A7 ___ _B7_ V. Description of Invention (2l) Institution 4 can revolve around the central axis of landmark 5 Turn. In this manual: the term " surrounding shape " has a broad meaning, and has a round shape, an oval shape, an oval shape, a polygonal shape, and unevenness (such as a wave shape). There is no need to form a complete circuit around it, and it may contain any incomplete parts. Even those with a partial interruption in the surrounding magnetic field in the surrounding corrosion blue 50 can still be used, such as uneven thickness in the deposited film. The deepest corroded site does not necessarily require a linear profile, and can be band-shaped or a substantial broad side. The best from the highest part to the shallowest part can be used as the deepest corroded part. The deepest corroded part is a conceptual part that can be used as a part to determine the corroded area, which has the deepest influence on the film deposition and is suitable for The degree of influence is determined. Corrosion is placed at a location where it can be corroded by the magnetic field. A very small number of ions can diffuse to the outside of the corroded area and reach a substrate that can penetrate a landmark. Over time, therefore, extremely shallow corrosion can be performed on the outside of the corrosion area • However, this corrosion does not affect the state of the film sinking, so it can be judged that this corrosion is not a substantial corrosion • When it is assumed to be in the corrosion area When the average corrosion rate is 100%, the area with a corrosion rate of 5% or less is considered not to be an actual corrosion area. Secondly, an example of the first embodiment is explained. In the first embodiment, in the following states Imported plating: Standard object diameter: 314mm TS distance: 303mm Base diameter: 3 0 0 mm This paper standard uses the Chinese national standard car (cns> a4 specifications (2iox297 mm> _ 24 _ " ----- ----- ^ ------ 1T ------ 0 (please read the notes on the back first / write this page) (A7 B7 Printed by Beigong Consumer Cooperative, Central Standards Bureau, Ministry of Economic Affairs Description of the invention (22) Voltage applied to the cathode: the deviation of the linear part of the two 600V N-pole magnets (distance diameter in FIG. 2): 40 mm »Diameter of the first deepest corroded part (Φ1 in FIG. 4): 200 mm, second The diameter of the deepest corroded part (Φ2 in Fig. 4): 100mm, the rotating speed of the magnet mechanism: 200 rmp, base Temperature: 300 ° C, target material: titanium, and discharge gas: argon As a result, it can be determined that thin film deposition can be introduced into the fine hole with an aspect ratio of 2 at a bottom coverage ratio of 40 to 4 5%. Here In the example, the film deposition rate is 1,000 Angstroms per minute * As described above, according to the present invention, because the bottom coverage ratio can be improved for a very large substrate while maintaining the required film deposition rate, the present invention is most suitable for Thin-film sinking technology for next-generation masher circuit. Brief description of the drawings FIG. 1 is a schematic diagram of a sputtering device in the first embodiment of the invention. FIG. 2 is a schematic perspective view of the configuration of the cathode and the magnet mechanism in the device of FIG. · FIG. 3 is a schematic perspective view of the configuration of the cathode in the device of FIG. 1 and the magnetic field configuration of the surrounding parts. The magnetic field of the surrounding parts generates β on the landmark of the magnet mechanism. FIG. 4 is the view 2 taken along the line X-X of circle 2. The function of the embodiment is based on the paper standard applicable to the Chinese National Standard (CNS > (210X297mm) _ _ Please read the back ii item 孑 孑 一 社, write this page binding line Ministry of Economic Affairs Central Standards Bureau Bei Gong Consumer Cooperative PrintedA7 _____B7_ V. Description of the invention (23) Schematic cross-sectional view · FIG. 5 shows the relationship between the diameter of the deepest corroded parts and the azimuth ratio of the TS distance. FIG. 6 is a schematic plan view of the configuration of the cathode in the second embodiment of the present invention. A plan view of a third embodiment of the present invention. FIG. 8 shows a cross-sectional view of a third embodiment of the present invention. FIG. 9 is used to illustrate an application example in which a current control mechanism for independently controlling the supply field coil is added to the In the third embodiment, the schematic diagram of FIG. 10 illustrates the collimated sputtering device in the example of the conventional sputtering device, in which the bottom coverage ratio has been improved. Fig. 11 is a schematic diagram illustrating a low-pressure, long-distance sputtering apparatus of another conventional sputtering apparatus. Fig. 12 illustrates a problem that occurs in the deposition of thin films on a large substrate when using the apparatus of 圚 11, and Partial view of landmarks and base in the device. 13 (A), 13 (B) illustrate the problems caused by thin film sinking on a large substrate using the device of FIG. 11 in the manner of circle 12, and the cross-section circle shows the bottom coverage ratio near the center of the substrate and surrounding parts . Circle 14 shows experimental data related to low pressure and long distance sputtering, and data indicating the correlation of the bottom coverage ratio at this pressure and T S distance. Figure 15 shows the experimental data related to low pressure and long distance sputtering, and the data indicating the correlation of the resistance of the thin film obtained at this pressure and TS distance. Figure 16 also shows the relationship with low pressure and long distance sputtering The data, the paper scale is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) ~ -Zb-^ 1 binding I J..4. (Please read the precautions on the back before filling in this book) ίί 2 2 t > dS A7 B7 5. Description of the invention (24) and the data indicating the relationship between the bottom coverage ratio and the azimuth ratio when the TS distance is 3 4 Omm. Figure 17 also shows the data related to low pressure and long distance sputtering. And when the TS distance is 260 mm, the data indicating the relationship between the bottom coverage ratio and the azimuth ratio. Figure 18 shows the results of studies on the effect of substrate size enlargement on the bottom coverage ratio and film deposition rate. Figure 19 shows a schematic perspective view of the shape of the perimeter of the deepest corroded area and the magnet mechanism used in the conventional device. Figure 20 shows the surrounding shape of the deepest corroded part, and a schematic perspective view of the cathode used in the traditional device. --------- "t-- (Please read the precautions on the back before filling this page) The paper standard printed by the Employee Consumer Cooperative of Central Central Bureau of Economic Affairs of the Ministry of Economic Affairs is applicable to China National Standard (CNS) A4 (210X297mm) -27-