經濟部中央揉準局貝工消费合作社印製 317074 A7 B7 五、發明説明（ 發明之技術範園 本發明係關於有機薄膜之加工方法，尤有關於一用於 在一薄膜底板上形成微小通路孔之有機薄膜加工方法，該 薄膜底板係由一聚合硫亞氨之有機絕緣薄膜與一銅箔傳導 層戶斤开多成，可做爲一 LSI薄膜包裝之底板或用於一印表機 之列印頭及其他相似物之有機薄膜底板。 發明之背景 多層配線板技術已被發展用於個人電腦及大型電腦中 之LSI包裝，現在，爲了符合降低裝置成本及加速已包裝 之裝置之目的，希望能實現使用具有良好高頻特性之絕緣 薄膜之高密度包裝技術。特別是，在一由有機薄膜及金屬 層形成之薄膜底板上以高產率及低成本形成微小通路孔之 方法已有需求。 此外，在一噴墨印表機等物之應用上，在厚度約ΙΟΟμπι 之有機薄膜底板上以低成本及高速率形成大量之微小通路 孔之方法已有需求。 做爲此種型式之有機薄膜加工方法，已有發明人提出 一用於形成高可靠度通路孔之方法。根據該申請案，在一 由有機絕緣薄膜及傳導層構成之薄膜底板上形成之通路孔 具有高縱橫比，且在有機絕緣薄膜及傳導層間之交接面上 沒有絕緣層留下。特別是，由包含一有機物質之絕緣薄膜 形成之底板被以一脈衝雷射光束照射，該雷射光束之波長 可被底板上欲形成通路孔之部位吸收，在被照射部位之通 路孔之底部之殘留薄膜接著藉由照射脈衝寬度爲200ns或 本紙張尺度適用中國國家標準（CNS ) A4规格（2丨〇乂297公釐） ------------裝(I (诗先閲讀背面之注意事項再填寫本頁) 1T-Printed 317074 A7 B7 by the Beigong Consumer Cooperative of the Central Bureau of Economic Development of the Ministry of Economic Affairs 5. Description of the invention (Technical Park of the Invention This invention relates to processing methods of organic thin films, in particular to a method for forming tiny via holes in a thin film substrate The organic film processing method, the film bottom plate is composed of a polysulfimine organic insulating film and a copper foil conductive layer, which can be used as a LSI film packaging bottom plate or used in a printer Organic film substrates for printing heads and other similar objects. BACKGROUND OF THE INVENTION Multilayer wiring board technology has been developed for LSI packaging in personal computers and large computers. Now, in order to meet the goals of reducing device costs and accelerating packaged devices, it is hoped that High-density packaging technology using insulating films with good high-frequency characteristics can be realized. In particular, there is a demand for a method for forming micro via holes with high yield and low cost on a film substrate formed of an organic film and a metal layer. , In the application of an inkjet printer, etc., at a low cost and high speed on an organic film substrate with a thickness of about 100 μπι A method for forming a large number of tiny via holes is in demand. As this type of organic thin film processing method, the inventor has proposed a method for forming a highly reliable via hole. According to the application, a The via hole formed on the film substrate composed of the film and the conductive layer has a high aspect ratio, and no insulating layer remains on the interface between the organic insulating film and the conductive layer. In particular, the substrate formed of an insulating film containing an organic substance It is irradiated with a pulsed laser beam, the wavelength of the laser beam can be absorbed by the part of the bottom plate where the via hole is to be formed, and the residual film at the bottom of the via hole of the irradiated part is then irradiated with a pulse width of 200ns or the paper The standard is applicable to the Chinese National Standard (CNS) A4 specification (2 丨 〇 mm 297 mm) ------------ installed (I (read the precautions on the back of the poem before filling out this page) 1T-
經濟部中央揉準局貝工消費合作社印製 五、發明说明（） 更低之第二脈衝雷射光束而被汽化並移除，接著，底板以 超音波淸洗沖掉並移除在通路孔側壁之沈積物，因此可以 高速率形成微小通路孔。 然而，傳統之通路孔形成方法在最後的步驟中需要超 音波淸洗，因此增加步驟之數目並使得製造成本難以降 低。 此外’在印表機之列印頭中形成微小通路孔之應用 中，必需在機構固定部分被組裝在絕緣薄膜上之狀況下進 行加工，因此，超音波淸洗所需之溶液處理製程有時可能 無法進行。 發明之綜合說萌 因此，本發明之一目的在於提供有機薄膜加工方法， 其藉由僅使用雷射照射製程，不使用溼製程使得有機薄膜 可以低成本加工。 根據本發明之一方面，爲了達到上述目的，提供一有 機薄膜加工及形成方法，包含下列步驟：照射一具有第一 預定時間寬之脈衝寬度之第一雷射4束在一絕緣底板上’ 該絕緣底板由包含一有機物質之絕緣層所形成且一金屬層 疊在該絕緣底板上一通路孔形成之部位以引起至少任一個 下述反應：熱分解一絕緣薄膜之照射雷射光束照射部分及 由於熱分解而產生氣體之反應，並照射一具有第二預定時 間寬之第二脈衝雷射光束在第一脈衝雷射光束照射之絕緣 層部分，以蒸發並移除在通路孔底部之殘留薄膜，第二脈 衝雷射光束之脈衝雷射光束之照射光束點尺寸大於第一脈 3 ____^- (請先聞讀背面之注意事項再填寫本頁) .義 tr 本紙張尺度適用中國國家標準（CNS ) A4規格（210Χ 297公釐） 經濟部中央梯準局貝工消费合作社印製 317074 A7 _B7_ 五、發明説明（） 衝雷射光束以擴展至包含絕緣層之熱變性區域之範圍。 根據本發明之另一方面，提供加工一包含有機物質之 薄膜(稱爲一有機薄膜)之加工方法’包含下歹陟驟：照射一 具有第一預定時間寬之脈衝寬度之第一雷射光束在一有機 薄膜之通路孔形成部位上，以引起至少任一個下述反應： @解一絕緣薄膜之照射雷射光束照射部分及由於熱分解 而產生氣體之反應，並照射一具有第二預定時間寬之第二 脈衝雷射光束在第一脈衝雷射光束照射之有機薄膜部位 上，該第二脈衝雷射光束之光束點尺寸大於第一脈衝雷射 光束以擴展至包含絕緣層之熱變性區域之範圍。 在傳統之在一由絕緣薄膜形成且有一傳導性薄膜疊在 其上之底板中形成通路孔之方法中’已知一在通路孔底部 之殘留薄膜可藉由照射一短脈衝雷射光束而蒸發並移除。 但是，用於蒸發並移除之照射光束具有與第一脈衝雷射光 束相同之光束點尺寸，因此，即使在第二脈衝雷射光束照 射以後，在通路孔側壁之沈積物仍然維持未移除之狀態， 故即使在第二脈衝雷射光束照射以後，仍需超音波淸洗製 程以移除在通路孔側壁之沈積物。 與此相反，依照本發明，用於移除在通路孔側壁之沈 積物之超音波淸洗製程可被省略以確保微小通路孔可藉由 較少之步驟及高可控性及高產率而形成。本發明可省卻如 前所述之任何加工製程期間之溼製程且因此其可擴展欲加 工之標的物至本發明所應用者且可大大地降低製造成本。 圓式之箇里說昍 4 -----1-----裝 f I (請先閲讀背面之注意Ϋ項再填寫本頁) 訂 線f · 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） A7 B7 經濟部中央標準局月工消費合作社印製 五、發明説明（） 圖1A-1E圖示依照本發明之一實施例之加工方法之步 驟。 較佳竇施例之詳細描述 ‘本發明將藉由配合圖式舉例之方法加以說明。 一依照本發明之一實施例之加工方法係以圖1A至圖 1E之加工步驟之順序以圖式加以說明。 參考圖1A至1E，欲加工之底板係用於包裝之薄膜， 該薄膜由厚度爲30μιη之聚合硫亞氨薄膜2及厚度爲10μιη 之銅層3所形成。在一雷射光束照射期間，將氮氣以1〇公 升/分鐘之低流率噴至底板上之照射部位以對該底板加 工。 在第一步驟中，如圖1Α所不，一第一脈衝雷射光束 具有0.3ms之脈衝寬度，此脈衝寬度係以超音波調變器調 整波長515mn之氬雷射光束而得，該第一脈衝雷射光束形 成一尺寸爲40μιη之照射光束點且以10ms之照射時間間隔 照射兩次。其照射強度爲500kw/cm2。 在第一脈衝雷射照射後之加工形狀剖面例示於圖 1B。在圖1B中’ _?L VH之底部尺寸爲40μιη，上部 尺寸爲70μιη。約30μπι厚之沈積物4沈積在通路孔6之側 壁且一從聚合硫亞氨變性而成之薄的殘留薄膜7留在通路 孔之底部。 在後續之第二步驟中，如圖1C所示，由第二較高諧波 之QSWYAG雷射(具有尺寸爲70μιη之照射光束點，10ns 之脈衝寬度及lOOMW/cm2之照射尖峰能量密度)所形成之 I丨-^---K----裝(---^--訂-----丨線f (許先閲讀背面之注意事項再填寫本頁) 本纸張尺度適用中國國家揉準（CNS ) A4規格（210x：297公羞） 經濟部中央標準局貝工消費合作社印製 317074 at __B7 五、發明説明（） 第二脈衝雷射光束5照射一次以上。 在第二脈衝雷射5照射後之加工形狀剖面例示於圖 1D。如圖所示，不只在通路孔底部之殘留薄膜7，在通路 孔側壁之沈積物4亦會被蒸發並移除以形成具有光滑側壁 之通路孔ό。以一電子顯微鏡觀察，在通路孔側壁8未發 現任何沈積物。 藉由電鑛將銅嵌入由上述方法產生之通路孔中，該通 路孔6可被銅以近於100%之比率及高可再製性均勻地塡 滿，如圖1Ε所示。此額外證明依照本發明製造之通路孔可 以高產率成形且沈積物可被完全移除。 在一比較性的例子中，第二脈衝雷射光束5以和第一 脈衝雷射光束1相同之40μιη照射點尺寸照射，在底部之 殘留薄膜可被完全移除但在通路孔側壁之沈積物無法除 去。 在前述之實施例中，本發明被應用於在底板形成通路 孔以包裝電子零件，但在第二實施例中，將針對在約1 ΟΟμπι 厚之聚合硫亞氨薄膜中產生微小孔之例子加以說明，特別 是應用於印表機之列印頭或其他相似物中。 在本實施例中，一與前述之第一實施例具有相似結構 之雷射光束源用於在一聚合硫亞氨薄膜中開設貫通孔。 在第一步驟中(請見圖1Α)照射第一脈衝雷射光束1之 狀況爲光束點尺寸40μιη、脈衝寬度〇.3ms、照射次數爲6 次、照射時間間隔l〇ms及照射強度500kw/cm2。 在第二步驟中(請見圖1C)照射第二脈衝雷射光束5之 紙 _______6__ __ . ____ 通用中國國家梯準（CNS ) Α4規格（210X297公釐） ----------裝C I (请先閲讀背面之注意Ϋ項再填寫本頁) 、1Τ 線f 經濟部中央揉準局系工消费合作社印褽 A7 B7 五、發明说明（） 狀況爲光束點尺寸12(^m、脈衝寬度10nS、照射尖峰能 量密度lOOMWcm2及照射次數爲1次。 所得之通路孔之底部直徑爲80μπι及上部直徑爲 ΙΙΟμιη 〇由於用於本實施例之聚合硫亞氨薄膜與包裝基板 不同，其缺少高傳熱性之銅箔’故通路孔之直徑在徑向上 由於聚合硫亞氨薄膜之熱擴散而增加，但在第二雷射光束5 照射之後在通路孔側壁沒有留下任何沈積物且側壁之光滑 度傾向於高於第一實施例中所觀察到者。 在印表機之列印頭及其他相似物中之通路孔形成中， 較高之側壁光滑度及通路孔之傾斜角可控制性對於控制墨 水之流量是十分重要的。依照本實施例之通路孔形成方法 可確保較高之側壁光滑度並容許傾斜角依據第一脈衝雷射 光束1之照射次數而改變且被證實爲一特別有效率之方 法。 第一脈衝雷射光束之脈衝寬度範圍爲1〇μ3至20ms。 理由在於：由於執行熱通路孔成形，假如脈衝寬度少於 1〇μ3，在雷射光束照射時熱會在絕緣層之表面擴散且無法 得到足以形成通路孔之熱量，此外，假如該脈衝寬度大於 20ms，產生的熱量會太大而傷害下方之金屬層，且因此不 適合做爲產品。 第二脈衝雷射光束之照射強度在前述之脈衝寬度時少 於約200ns且在尖峰能量密度時超過約lOMW/cm2。理由 爲下方之層及通路孔側壁在脈衝雷射光束之脈衝寬度變大 時會受到不利的影響。此外，使用約lOMW/cm2或更高之 7 本紙張尺度適用中國國家$準（CNS ) A4規格（210X297公釐) ' ------f-----裳〈I (请先閏讀背面之注意事項再填寫本頁) •1T- 317074 A7 B7_ 五、發明説明（） I!- — h----裝？ (請先《讀背面之注意Ϋ項再填寫本頁) 尖峰能量密度係做爲移除由照射第一脈衝雷射光束而產生 之通路孔底部之絕緣層上之熱分解沈積物之最小強度，且 假如使用較低之照射強度，就無法移除熱分解沈積物。 線f 經濟部中央揉準局員工消费合作杜印製 第一脈衝雷射光束之脈衝寬度係用於熱分解有機薄 膜。10μ5至20ms範圍內之脈衝寬度是合適的。理由如下 所述。在磨蝕製程方法(係有名之製造有機薄膜之方法)中， 使用一脈衝寬度約2〇ns及較雷射光束短之吸收長度約 0.5μιη之紫外線。在另一方面，在本發明之第一脈衝雷射 光束之照射中，由於在一次的照射中該雷射光束滲透超過 數μιη之深度以形成一深孔，假如以一短脈衝施加一急熱， -爆炸性的分解反應因雷射能量在薄膜之深度方向被吸收 而產生，且由於此衝擊在靠近照射部分周圍之有機薄膜會 產生破裂之問題。此外，在磨蝕製程方法中，一傳導物質 在處理之側壁上形成。另一方面，與磨蝕製程方法使用之 脈衝寬度相比較，在本發明之方法中使用較長之脈衝寬 度，且因此得到可藉由緩慢的熱分解反應在不引起因衝擊 而產生之破裂的情況下輕易地移除側壁之分解層之優點。 根據實驗發現爲了避免破裂或側壁傳導層產生，大於 之脈衝寬度是合適的。在另一方面，在第一脈衝光束照射 之脈衝寬度之上限中，問題將會產生，藉由在薄膜內之熱 擴散效應，熱分解區域之邊界向外擴展得太寬造成加工直 徑之可控制性降低，惡化所形成之通路孔之縱橫比’且傳 遞至在底板底部之銅箔之熱量造成接近照射部位周圍之銅 箔可輕易地剝除。根據爲了避免該問題所做關於脈衝寬度 ____8_____ 本紙張又度適用中國國家榡準（CNS ) A4現格（210X297公釐）Printed by the Beigong Consumer Cooperative of the Ministry of Economic Affairs of the Ministry of Economic Affairs. 5. Description of the invention () The lower second pulsed laser beam is vaporized and removed. Then, the bottom plate is washed away by ultrasonic washing and removed at the via hole The deposits on the side walls can form tiny via holes at a high rate. However, the conventional via hole formation method requires ultrasonic washing in the final step, so increasing the number of steps and making it difficult to reduce the manufacturing cost. In addition, in the application of forming tiny via holes in the printing head of the printer, it is necessary to process under the condition that the fixed part of the mechanism is assembled on the insulating film. Therefore, the solution processing process required for ultrasonic washing is sometimes It may not be possible. Summary of the Invention Therefore, it is an object of the present invention to provide an organic thin film processing method, which allows the organic thin film to be processed at low cost by using only a laser irradiation process and not using a wet process. According to an aspect of the present invention, in order to achieve the above object, an organic thin film processing and forming method is provided, including the following steps: irradiating a first laser beam with a pulse width of a first predetermined time width on an insulating substrate The insulating base plate is formed of an insulating layer containing an organic substance and a metal is laminated on the insulating base plate at a portion formed by a via hole to cause at least any one of the following reactions: thermal decomposition of the irradiated laser beam irradiation portion of an insulating film and Thermal decomposition generates gas reaction and irradiates a second pulse laser beam with a second predetermined time width on the insulating layer portion irradiated by the first pulse laser beam to evaporate and remove the residual film at the bottom of the via hole, The spot size of the pulsed laser beam of the second pulsed laser beam is larger than that of the first pulse 3 ____ ^-(please read the precautions on the back side before filling out this page). Yitr This paper size is applicable to the Chinese National Standard (CNS ) A4 specification (210Χ 297 mm) Printed by the Ministry of Economic Affairs Central Bureau of Standards and Technology Beigong Consumer Cooperatives 317074 A7 _B7_ V. Description of invention () Chong laser Beam is expanded to include the range of the heat insulating layer denatured area. According to another aspect of the present invention, there is provided a processing method for processing a thin film containing an organic substance (referred to as an organic thin film) including the following steps: irradiating a first laser beam having a pulse width of a first predetermined time width At least one of the following reactions is caused on the via hole forming part of an organic film: @ 解 一 Insulation film irradiation laser beam irradiated part and the gas decomposition reaction due to thermal decomposition, and irradiated for a second predetermined time The wide second pulsed laser beam is on the portion of the organic film irradiated by the first pulsed laser beam, and the beam spot size of the second pulsed laser beam is larger than that of the first pulsed laser beam to extend to the thermally denatured region including the insulating layer Scope. In the conventional method of forming a via hole in a bottom plate formed of an insulating film and having a conductive film stacked thereon, it is known that a residual film at the bottom of the via hole can be evaporated by irradiating a short pulse laser beam And remove. However, the irradiation beam used for evaporation and removal has the same beam spot size as the first pulsed laser beam, so even after the second pulsed laser beam is irradiated, the deposit on the sidewall of the via hole remains unremoved Therefore, even after the second pulsed laser beam is irradiated, the ultrasonic washing process is still required to remove the deposits on the sidewalls of the via holes. In contrast, according to the present invention, the ultrasonic washing process for removing deposits on the sidewalls of via holes can be omitted to ensure that tiny via holes can be formed by fewer steps and with high controllability and high yield . The present invention can dispense with the wet process during any processing process as described above and therefore it can expand the subject matter to be processed to those to which the present invention is applied and can greatly reduce the manufacturing cost. Round-shaped 羇 里 说 昍 4 ----- 1 ----- install f I (please read the note Ϋ on the back before filling in this page) Thread f · The paper size is applicable to the Chinese National Standard (CNS) A4 size (210X297 mm) A7 B7 Printed by the Monthly Consumers Cooperative of the Central Bureau of Standards of the Ministry of Economy 5. Description of the invention () Figures 1A-1E illustrate the steps of the processing method according to one embodiment of the present invention. Detailed description of the preferred sinus embodiment ‘The present invention will be illustrated by way of example in conjunction with the drawings. A processing method according to an embodiment of the present invention is illustrated in the order of the processing steps in FIGS. 1A to 1E. Referring to FIGS. 1A to 1E, the bottom plate to be processed is a film for packaging, which is formed of a polythioimide film 2 with a thickness of 30 μm and a copper layer 3 with a thickness of 10 μm. During the irradiation of a laser beam, nitrogen gas was sprayed to the irradiated part on the bottom plate at a low flow rate of 10 liter / min to process the bottom plate. In the first step, as shown in FIG. 1A, a first pulsed laser beam has a pulse width of 0.3ms. This pulse width is obtained by adjusting the argon laser beam with a wavelength of 515mn by an ultrasonic modulator. The pulsed laser beam forms an irradiation beam spot with a size of 40 μm and is irradiated twice at an irradiation time interval of 10 ms. The irradiation intensity is 500kw / cm2. An example of the processed shape cross section after the first pulse laser irradiation is shown in Fig. 1B. In FIG. 1B, the bottom dimension of the L VH is 40 μm, and the upper dimension is 70 μm. A deposit 4 of about 30 m thick is deposited on the side wall of the via hole 6 and a thin residual film 7 denatured from the polymerized sulfurimide is left at the bottom of the via hole. In the subsequent second step, as shown in FIG. 1C, the QSWYAG laser with the second higher harmonic (with an irradiation beam spot with a size of 70μιη, a pulse width of 10ns and an irradiation peak energy density of 100MW / cm2) Formed I 丨-^ --- K ---- installed (--- ^-book ----- 丨 line f (Xu first read the precautions on the back and then fill out this page) This paper size is applicable to China National Standardization (CNS) A4 specification (210x: 297). Printed by the Beigong Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 317074 at __B7 5. Description of the invention () The second pulse laser beam 5 is irradiated more than once. During the second pulse An example of the processed shape cross section after laser 5 irradiation is shown in Fig. 1D. As shown, not only the residual film 7 on the bottom of the via hole, but also the deposit 4 on the sidewall of the via hole will be evaporated and removed to form a smooth sidewall Via hole. Observed with an electron microscope, no deposits were found on the sidewall 8 of the via hole. By embedding copper into the via hole generated by the above method, the via hole 6 can be covered by copper at a rate of nearly 100% And high reproducibility evenly filled, as shown in Figure 1E. This additional proof The via holes made by the present invention can be formed with high yield and the deposit can be completely removed. In a comparative example, the second pulsed laser beam 5 is irradiated with the same spot size of 40 μm as the first pulsed laser beam 1 The residual film on the bottom can be completely removed but the deposits on the sidewalls of the via holes cannot be removed. In the foregoing embodiment, the present invention is applied to forming via holes in the bottom plate to package electronic parts, but in the second embodiment In this article, an example of micropores in a polymer thioimine film with a thickness of about 100 μm will be described, especially in the printing head of a printer or other similar objects. In this embodiment, one is as described above The first embodiment has a laser beam source with a similar structure for opening a through hole in a polymerized sulfimine film. In the first step (see FIG. 1A), the first pulsed laser beam 1 is irradiated as a beam The spot size is 40 μm, the pulse width is 0.3 ms, the irradiation frequency is 6 times, the irradiation time interval is 10 ms, and the irradiation intensity is 500 kw / cm2. In the second step (see FIG. 1C), the second pulsed laser beam 5 is irradiated. Paper _______6__ __. ____ General Chinese National Standard (CNS) Α4 specification (210X297 mm) ---------- Install CI (please read the note Ϋ on the back and fill in this page), 1T line f The Central Bureau of Economic Development of the Ministry of Economic Affairs of the Ministry of Industry and Consumer Cooperatives, printed A7 B7 V. Description of the invention () The status is the beam spot size 12 (^ m, pulse width 10nS, irradiation peak energy density 100MWcm2, and the number of irradiations is 1. The obtained path The bottom diameter of the hole is 80μπι and the upper diameter is ΙΙΟμιη. Because the polymerized sulfur imine film used in this embodiment is different from the packaging substrate, it lacks a copper foil with high heat transfer ', so the diameter of the via hole is radially The thermal diffusion of the imine film increases, but after the second laser beam 5 is irradiated, no deposit is left on the sidewall of the via hole and the smoothness of the sidewall tends to be higher than that observed in the first embodiment. In the formation of via holes in printing heads and other similar objects of printers, higher side wall smoothness and controllability of the inclination angle of the via holes are very important for controlling the ink flow rate. The via hole forming method according to the present embodiment can ensure a higher smoothness of the side wall and allow the tilt angle to be changed according to the number of irradiations of the first pulsed laser beam 1 and has proved to be a particularly efficient method. The pulse width of the first pulsed laser beam ranges from 10 μ3 to 20 ms. The reason is that due to the formation of thermal via holes, if the pulse width is less than 10 μ3, the heat will diffuse on the surface of the insulating layer when irradiated by the laser beam and sufficient heat to form the via holes cannot be obtained. In addition, if the pulse width is greater than 20ms, the generated heat will be too large to damage the metal layer below, and therefore is not suitable as a product. The irradiation intensity of the second pulsed laser beam is less than about 200 ns at the aforementioned pulse width and exceeds about 1 OMW / cm2 at the peak energy density. The reason is that the layer below and the side wall of the via hole will be adversely affected when the pulse width of the pulsed laser beam becomes larger. In addition, the use of 7 paper sizes of about lOMW / cm2 or higher is applicable to the Chinese National Standard (CNS) A4 specification (210X297mm) '------ f ----- shang <I (please run first Read the precautions on the back and fill in this page) • 1T-317074 A7 B7_ 5. Description of the invention () I!-— H ---- install? (Please read "Notes on the back" before filling in this page) The peak energy density is used to remove the minimum intensity of thermal decomposition deposits on the insulating layer at the bottom of the via hole generated by the irradiation of the first pulse laser beam, And if a lower irradiation intensity is used, the thermal decomposition deposits cannot be removed. Line f. The consumer cooperation of the Central Ministry of Economic Affairs of the Ministry of Economic Affairs. The printing of the first pulse laser beam is used to thermally decompose organic thin films. A pulse width in the range of 10μ5 to 20ms is suitable. The reasons are as follows. In the abrasion process method (a well-known method for manufacturing organic thin films), a pulse width of about 20 ns and an absorption length of about 0.5 μm shorter than the laser beam are used. On the other hand, in the irradiation of the first pulse laser beam of the present invention, since the laser beam penetrates beyond a depth of several μm to form a deep hole in one irradiation, if a short pulse is applied to a rapid heat , -The explosive decomposition reaction is generated due to the absorption of laser energy in the depth direction of the film, and due to this impact, the organic film near the irradiated part will be broken. In addition, in the abrasion process method, a conductive substance is formed on the processed sidewall. On the other hand, compared with the pulse width used in the abrasion process method, a longer pulse width is used in the method of the present invention, and thus a situation that can be caused by slow thermal decomposition reaction without causing cracks due to impact is obtained The advantage of easily removing the decomposed layer of the side wall. According to the experiment, it is found that in order to avoid cracks or the generation of the conductive layer on the side wall, a pulse width larger than is suitable. On the other hand, in the upper limit of the pulse width irradiated by the first pulse beam, a problem will arise that, due to the thermal diffusion effect in the thin film, the boundary of the thermal decomposition region expands too wide, resulting in a controllable processing diameter The performance is reduced, the aspect ratio of the via hole formed is deteriorated, and the heat transferred to the copper foil at the bottom of the bottom plate causes the copper foil near the irradiation site to be easily peeled off. According to the pulse width made in order to avoid this problem ____8_____ This paper is again applicable to the Chinese National Standard (CNS) A4 (210X297mm)
經濟部中央梯準局負工消費合作社印製 I A7 ___B7_ 五、發明説明（） 之實驗結果，發現少於2〇ms之脈衝寬度除去前述加工直徑 之可控制性之問題及底板底部之銅箔剝離問題。 在另一方面，由於第二脈衝雷射光束照射之任務係在 於藉由分解之熱衝擊而對第一脈衝雷射照射所產生之有機 薄膜之照射部位側壁予以噴吹，及蒸發並移除在通路孔之 底部殘留之薄膜，故其適合使用與正常的磨蝕製程方法相 同之脈衝寬度，通常約20ns之脈衝寬度或最長約200ns之 脈衝寬度係合適的。 如前所述，依照本發明，微小通路孔可經由少數之步 驟與高可控制性及高產率而形成，此外，在加工過程中不 需要任何溼步驟，因此可擴展工件之種類並大量降低製造 成本。 在以上詳細說明中所提出之具體的實施態樣或實施例 僅爲了易於說明本發明之技術內容，本發明並非狹義地限 制於該實施例，在不超出本發明之精神及以下之申請專利 範圍之情況，可作種種變化實施。 _9 本紙張尺度適用中國國家標準（CNS ) A4規格（2Ϊ0Χ297公釐） I — :-I l·----裝(I (请先閲讀背面之注意^項再填寫本頁) 訂Printed I A7 ___B7_ by the Ministry of Economic Affairs, Central Bureau of Standards, and Consumer Cooperatives. 5. The experimental results of (), found that the pulse width of less than 20ms removes the problem of controllability of the aforementioned processing diameter and the copper foil at the bottom of the bottom plate Peeling problem. On the other hand, since the task of the second pulse laser beam irradiation is to spray the side wall of the irradiated part of the organic film produced by the first pulse laser irradiation by the thermal shock of decomposition, and to evaporate and remove the The film remaining on the bottom of the via hole is suitable for using the same pulse width as the normal abrasion process method. Usually, a pulse width of about 20 ns or a pulse width of up to about 200 ns is appropriate. As described above, according to the present invention, micro via holes can be formed by a few steps and with high controllability and high yield. In addition, no wet steps are required during the processing, so the types of workpieces can be expanded and manufacturing can be greatly reduced. cost. The specific implementation forms or embodiments proposed in the above detailed description are only for easy description of the technical content of the present invention, and the present invention is not limited to the embodiments in a narrow sense, without exceeding the spirit of the present invention and the following patent application scope The situation can be implemented with various changes. _9 The size of this paper is in accordance with Chinese National Standard (CNS) A4 (2Ϊ0Χ297mm) I —: -I l · ---- installed (I (please read the note on the back ^ item before filling out this page)