JP2710608B2 - Organic film processing method - Google Patents
Organic film processing methodInfo
- Publication number
- JP2710608B2 JP2710608B2 JP8071435A JP7143596A JP2710608B2 JP 2710608 B2 JP2710608 B2 JP 2710608B2 JP 8071435 A JP8071435 A JP 8071435A JP 7143596 A JP7143596 A JP 7143596A JP 2710608 B2 JP2710608 B2 JP 2710608B2
- Authority
- JP
- Japan
- Prior art keywords
- laser beam
- irradiation
- organic film
- irradiating
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000003672 processing method Methods 0.000 title description 7
- 230000001678 irradiating effect Effects 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 18
- 239000000126 substance Substances 0.000 claims description 9
- 238000006243 chemical reaction Methods 0.000 claims description 7
- 238000005979 thermal decomposition reaction Methods 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 238000010030 laminating Methods 0.000 claims description 4
- 229920001721 polyimide Polymers 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 238000004506 ultrasonic cleaning Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000010129 solution processing Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0017—Etching of the substrate by chemical or physical means
- H05K3/0026—Etching of the substrate by chemical or physical means by laser ablation
- H05K3/0032—Etching of the substrate by chemical or physical means by laser ablation of organic insulating material
- H05K3/0035—Etching of the substrate by chemical or physical means by laser ablation of organic insulating material of blind holes, i.e. having a metal layer at the bottom
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
- B23K26/382—Removing material by boring or cutting by boring
- B23K26/389—Removing material by boring or cutting by boring of fluid openings, e.g. nozzles, jets
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
- B29C59/16—Surface shaping of articles, e.g. embossing; Apparatus therefor by wave energy or particle radiation, e.g. infrared heating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1632—Manufacturing processes machining
- B41J2/1634—Manufacturing processes machining laser machining
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
- B41M5/00—Duplicating or marking methods; Sheet materials for use therein
- B41M5/24—Ablative recording, e.g. by burning marks; Spark recording
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/486—Via connections through the substrate with or without pins
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C35/00—Heating, cooling or curing, e.g. crosslinking or vulcanising; Apparatus therefor
- B29C35/02—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould
- B29C35/08—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation
- B29C35/0805—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using electromagnetic radiation
- B29C2035/0838—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using electromagnetic radiation using laser
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29K—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
- B29K2079/00—Use of polymers having nitrogen, with or without oxygen or carbon only, in the main chain, not provided for in groups B29K2061/00 - B29K2077/00, as moulding material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/0332—Structure of the conductor
- H05K2201/0388—Other aspects of conductors
- H05K2201/0394—Conductor crossing over a hole in the substrate or a gap between two separate substrate parts
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/08—Treatments involving gases
- H05K2203/081—Blowing of gas, e.g. for cooling or for providing heat during solder reflowing
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/08—Treatments involving gases
- H05K2203/086—Using an inert gas
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
- H05K2203/107—Using laser light
- H05K2203/108—Using a plurality of lasers or laser light with a plurality of wavelengths
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Toxicology (AREA)
- Mechanical Engineering (AREA)
- Health & Medical Sciences (AREA)
- Plasma & Fusion (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Laser Beam Processing (AREA)
- Electrodes Of Semiconductors (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
Description
【０００１】[0001]
【発明の属する技術分野】本発明は有機フィルム加工方
法に関し、特に高密度多層配線や、ＬＳＩのフィルムパ
ッケージの基板として有用なポリイミド・銅箔等の有機
絶縁膜／導電層からなるフィルム基板や、プリンタヘッ
ド等に用いられる有機フィルム基板に、微細なビアホー
ルを形成する有機フィルム加工方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic film processing method, and more particularly, to a film substrate comprising an organic insulating film / conductive layer such as a polyimide / copper foil useful as a substrate for high-density multilayer wiring or an LSI film package; The present invention relates to an organic film processing method for forming fine via holes in an organic film substrate used for a printer head or the like.
【０００２】[0002]
【従来の技術】多層配線基板技術は、パーソナルコンピ
ュータや、大型コンピュータのＬＳＩ実装用に発展し、
現在、装置コストの低減と、実装デバイスの高速化への
対応を図るために、良好な高周波特性を有する絶縁フィ
ルムを用いた高密度実装技術の実用化が望まれている。
なかでも、有機フィルムと金属層とを張り合わせてなる
フィルム基板に微細なビアホールを高スループットで、
安価に形成する方法が求められている。2. Description of the Related Art Multilayer wiring board technology has been developed for LSI mounting of personal computers and large-scale computers.
At present, practical use of a high-density mounting technology using an insulating film having good high-frequency characteristics is desired in order to reduce the device cost and to increase the speed of mounting devices.
Above all, fine via holes are formed at high throughput on a film substrate consisting of an organic film and a metal layer,
There is a demand for an inexpensive method.
【０００３】また、インクジェットプリンタ等の応用で
は、膜厚が１００μｍ程度の有機フィルム基板に、微細
な多数のビアホールを、安価なコストで、しかも高速に
形成する方法が求められている。In addition, for application to ink jet printers and the like, there is a demand for a method of forming a large number of fine via holes on an organic film substrate having a thickness of about 100 μm at a low cost and at a high speed.
【０００４】この種の有機フィルム加工方法として、本
発明者らは、例えば特願平７−１４５６８７号に有機絶
縁膜と導電層からなるフィルム基板に高いアスペクト比
を持ち導電層との界面に絶縁層を残さずに信頼性に優れ
る、ビアホールを形成する方法を提案している。即ち、
上記特願平７−１４５６８７号には、有機物質を含有す
る絶縁フィルムからなる基板において、ビアホールの形
成箇所に、基板に吸収のある波長のパルスレーザ光を照
射した後、一の照射部のビアホール底部の残留膜をパル
ス幅２００ｎｓ以下の第２のパルスレーザ光の照射によ
り蒸散除去し、さらに、基板を超音波洗浄することによ
り、ビアホール側壁部の付着物を洗浄除去して、微細な
ビアホールを高いスループットで形成できることが記載
されている。As a method of processing an organic film of this type, the present inventors have disclosed, for example, in Japanese Patent Application No. 7-145687 that a film substrate comprising an organic insulating film and a conductive layer has a high aspect ratio and has an insulating film at the interface with the conductive layer. A method of forming a via hole which is excellent in reliability without leaving a layer is proposed. That is,
Japanese Patent Application No. 7-145687 discloses that, in a substrate made of an insulating film containing an organic material, a portion where a via hole is formed is irradiated with a pulsed laser beam having a wavelength that absorbs the substrate, and then the via hole in one irradiated portion is irradiated. The bottom residual film is evaporated and removed by irradiating a second pulse laser beam having a pulse width of 200 ns or less, and further, the substrate is subjected to ultrasonic cleaning to remove and remove attached matter on the via hole side wall, thereby forming a fine via hole. It is described that it can be formed with high throughput.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、上記特
願平７−１４５６８７号に記載された、従来のビアホー
ル形成法においては、工程の最後に、超音波洗浄が必要
とされており、このため工程数が増加し、製造コストを
低減することが難しい。However, in the conventional via hole forming method described in Japanese Patent Application No. 7-145687, ultrasonic cleaning is required at the end of the process. The number increases, and it is difficult to reduce the manufacturing cost.
【０００６】また、上記公報に記載の従来の方法におい
ては、プリンタヘッドへ微細なビアホールを形成する用
途においては、絶縁フィルムに機構保持部品が組付けら
れた状態で加工する必要が生じることから、超音波洗浄
で必要とされる溶液処理工程を適用することができない
場合もある。Further, in the conventional method described in the above-mentioned publication, it is necessary to work in a state where a mechanism holding component is mounted on an insulating film in a case where a fine via hole is formed in a printer head. In some cases, the solution processing step required for ultrasonic cleaning cannot be applied.
【０００７】従って、本発明は、上記問題点に鑑みてな
されたものであって、レーザ照射工程のみで有機フィル
ム加工を可能とし、低コスト、かつウェットプロセスを
不要とした有機フィルム加工方法を提供することを目的
とする。[0007] Accordingly, the present invention has been made in view of the above problems, and provides an organic film processing method which enables an organic film processing only by a laser irradiation step, and which is low cost and does not require a wet process. The purpose is to do.
【０００８】[0008]
【課題を解決するための手段】前記目的を達成するた
め、本発明は、有機物質を含む絶縁層と金属層とを積層
してなるフィルム基板へ、第１の所定時間幅のパルス幅
を有する第１のパルスレーザ光を、１ショット以上、前
記フィルム基板のビアホール形成部に対して照射し、前
記絶縁層のレーザ光照射部を熱分解、又は熱分解に伴う
ガス発生の少なくともいずれかの反応を起こさせる工程
と、前記絶縁層における前記第１のパルスレーザ光の照
射部に、第２の所定時間幅の第２のパルスレーザ光を照
射してビアホール底部の残留膜を蒸散除去する工程と、
を含む有機フィルム加工形成方法において、前記第２の
パルスレーザ光の照射ビーム径を、前記第１のパルスレ
ーザ光のビーム径よりも大とし、前記絶縁層の熱変性し
た領域を覆う範囲にまで拡大したことを特徴とする有機
フィルム加工方法を提供する。In order to achieve the above object, according to the present invention, a pulse width of a first predetermined time width is applied to a film substrate formed by laminating an insulating layer containing an organic substance and a metal layer. One or more shots of the first pulsed laser beam are applied to the via hole forming portion of the film substrate, and the laser beam irradiated portion of the insulating layer is thermally decomposed or at least one of gas generation accompanying the pyrolysis. And irradiating the first pulsed laser beam irradiation portion of the insulating layer with a second pulsed laser beam having a second predetermined time width to evaporate and remove the residual film at the bottom of the via hole. ,
Wherein the irradiation beam diameter of the second pulsed laser beam is larger than the beam diameter of the first pulsed laser beam, so that the irradiation beam diameter of the second pulsed laser beam covers a thermally denatured region of the insulating layer. Provided is an organic film processing method characterized by being enlarged.
【０００９】本発明の有機フィルム加工方法は、有機物
質を含む絶縁層と金属層とを積層してなるフィルム基板
へ、１０μｓから２０ｍｓの範囲のパルス幅の第１のパ
ルスレーザ光を、１ショット以上、前記フィルム基板の
ビアホール形成部に照射し、前記第１のパルスレーザ光
の照射による前記絶縁層の温度上昇を介して前記絶縁層
の前記第１のパルスレーザ光照射部を熱分解、又は熱分
解に伴うガス発生の少なくともいずれかの反応を起こさ
せる工程と、前記絶縁層における前記第１のパルスレー
ザ光の照射部に、パルス幅略２００ｎｓ以下、ピークパ
ワー密度略１０ＭＷ／ｃｍ2以上の照射強度の第２のパ
ルスレーザ光を照射して、ビアホール底部の残留膜を蒸
散除去する工程と、を含み、前記第２のパルスレーザ光
の照射ビーム径を、前記第１のパルスレーザ光のビーム
径よりも大とし、前記絶縁層の熱変性した領域を覆う範
囲にまで拡大したことを特徴とする。According to the organic film processing method of the present invention, a first pulsed laser beam having a pulse width in the range of 10 μs to 20 ms is applied to a film substrate formed by laminating an insulating layer containing an organic substance and a metal layer for one shot. Above, irradiate the via-hole forming portion of the film substrate, and thermally decompose the first pulsed laser beam irradiating portion of the insulating layer through the temperature rise of the insulating layer due to the irradiation of the first pulsed laser beam, or A step of causing at least one of the reactions of gas generation accompanying the thermal decomposition, and applying a pulse width of about 200 ns or less and a peak power density of about 10 MW / cm 2 or more to the irradiation portion of the insulating layer with the first pulsed laser beam. Irradiating a second pulsed laser beam of irradiation intensity to evaporate and remove the residual film at the bottom of the via hole, the irradiation beam diameter of the second pulsed laser beam, The beam diameter of the first pulsed laser beam is larger than the beam diameter of the first pulsed laser beam, and is expanded to a range covering the thermally denatured region of the insulating layer.
【００１０】本発明は、有機物質を含んでなるフィルム
（「有機フィルム」という）へ、第１の所定時間幅のパ
ルス幅を有する第１のパルスレーザ光を、１ショット以
上、前記有機フィルムのビアホール形成部に対して照射
し、前記第１のパルスレーザ光の照射部において前記有
機フィルムに熱分解、又は熱分解に伴うガス発生の少な
くともいずれかの反応を起こさせる工程と、前記有機フ
ィルムにおける前記第１のパルスレーザ光の照射部に、
前記第１のパルスレーザ光よりも大の、前記有機フィル
ムの熱変性した領域を覆う範囲にまで広げたビーム径
と、第２の所定時間幅のパルス幅と、を有する第２のパ
ルスレーザ光を照射する工程と、を含むことを特徴とす
る有機フィルム加工方法を提供する。According to the present invention, a film containing an organic substance (referred to as an “organic film”) is irradiated with a first pulsed laser beam having a pulse width of a first predetermined time width for one or more shots of the organic film. Irradiating the via-hole forming portion, and thermally decomposing the organic film in the irradiating portion of the first pulsed laser beam, or causing a reaction of at least one of gas generation accompanying the thermal decomposition, and In the irradiation section of the first pulse laser light,
A second pulsed laser beam having a beam diameter larger than the first pulsed laser beam and expanded to a range covering the thermally denatured region of the organic film, and a pulse width having a second predetermined time width. And a step of irradiating the organic film.
【００１１】また、本発明の有機フィルム加工方法は、
有機物質を含んでなるフィルム（「有機フィルム」）
へ、１０μｓから２０ｍｓの範囲のパルス幅の第１のパ
ルスレーザ光を、１ショット以上、前記有機フィルムの
ビアホール形成部に対して照射し、前記第１のパルスレ
ーザ光の照射による前記有機フィルムの温度上昇を介し
て、前記有機フィルムの前記第１のパルスレーザ光照射
部を熱分解、又は熱分解に伴うガス発生の少なくともい
ずれかの反応を起こさせる工程と、前記有機フィルムに
おける前記第１のパルスレーザ光の照射部に、照射ビー
ム径を前記第１のパルスレーザ光よりも大の、前記有機
フィルムの熱変性した領域を覆う範囲にまで広げた、パ
ルス幅略２００ｎｓ以下、ピークパワー密度略１０ＭＷ
／ｃｍ2以上の照射強度の第２のパルスレーザ光を照射
する工程と、を含むことを特徴とする。Further, the organic film processing method of the present invention comprises:
Films containing organic substances ("organic films")
Irradiates a first pulse laser beam having a pulse width in a range of 10 μs to 20 ms to a via hole forming portion of the organic film for at least one shot, and irradiates the organic film with the first pulse laser beam. A step of thermally decomposing the first pulsed laser beam irradiating section of the organic film via a temperature rise, or causing a reaction of at least one of gas generation accompanying the thermal decomposition, and the first step of the organic film. In the irradiation part of the pulse laser beam, the irradiation beam diameter is expanded to a range larger than the first pulse laser beam and covering the thermally denatured region of the organic film, the pulse width is approximately 200 ns or less, and the peak power density is approximately. 10MW
Irradiating a second pulsed laser beam having an irradiation intensity of / cm 2 or more.
【００１２】[0012]
【作用】本発明の原理・作用を以下に説明する。本発明
は、第１のパルスレーザ光の照射により生じたビアホー
ル側壁部の付着物を、レーザビーム径を、第１のパルス
レーザ光照射よりも、熱分解物が付着する範囲を含むよ
うに、拡大させてなるパルス幅が好ましくは２００ｎｓ
以下の第２のパルスレーザ光を、第１のパルスレーザ光
照射部に続けて照射することにより、付着物そのものの
吸収により発生する衝撃波を利用して、吹き飛ばすこと
が可能であるとの、実験結果に基づき、完成されたもの
である。The principle and operation of the present invention will be described below. The present invention provides a method in which a deposit on a side wall of a via hole generated by irradiation with a first pulsed laser beam has a laser beam diameter larger than that of the first pulsed laser beam irradiation so as to include a range to which a thermal decomposition product is attached. The expanded pulse width is preferably 200 ns
Experiments show that by irradiating the first pulsed laser light irradiating part with the following second pulsed laser light continuously, it is possible to blow off using a shock wave generated by absorption of the attached matter itself. It has been completed based on the results.
【００１３】従来、絶縁膜と導電膜が積層された基板へ
のビアホール形成方法において、ビアホール底の残留膜
を短パルスレーザ光を照射することにより蒸散除去でき
ることは知られていたが、蒸散除去用の照射ビームが第
１のパルスレーザ光のビーム径と同じであったがため
に、第２のパルスレーザ光を照射した後にも、なお、ビ
アホール側壁の付着物は除去されず、このため、第２の
パルスレーザ光照射後において、ビアホール側壁の付着
物を除去するための超音波洗浄工程が必要とされてい
た。Conventionally, in a method of forming a via hole in a substrate on which an insulating film and a conductive film are laminated, it has been known that the residual film at the bottom of the via hole can be removed by irradiating a short pulse laser beam. Since the irradiation beam of the above was the same as the beam diameter of the first pulsed laser light, even after the irradiation of the second pulsed laser light, the adhered matter on the side wall of the via hole was not removed. After the second pulse laser beam irradiation, an ultrasonic cleaning step was required to remove the deposits on the side walls of the via holes.
【００１４】これに対して、本発明によれば、ビアホー
ル側壁部の付着物除去のための超音波洗浄工程を不用と
したものであり、少ない工程数で、微細なビアホールを
制御性よく、且つ高いスループットで形成することを可
能としたものである。このように、本発明は、加工工程
中にウェットプロセスを不要としたことから、適用可能
な加工対象を拡大でき、かつ、製造コストを大幅に低減
することができるという利点を有する。On the other hand, according to the present invention, the ultrasonic cleaning step for removing the deposit on the side wall of the via hole is unnecessary, and the number of steps is small, and the fine via hole can be controlled with good controllability. This enables formation with high throughput. As described above, the present invention has an advantage that the applicable processing target can be expanded and the manufacturing cost can be significantly reduced because the wet process is not required during the processing step.
【００１５】[0015]
【発明の実施の形態】本発明の実施形態について図面を
参照して以下に詳細に説明する。Embodiments of the present invention will be described in detail below with reference to the drawings.
【００１６】[0016]
【実施形態１】図１は、本発明の一実施形態に係る加工
工程を工程順に模式的に示す図である。[Embodiment 1] FIG. 1 is a view schematically showing processing steps according to an embodiment of the present invention in the order of steps.
【００１７】被加工基板は、厚さ３０μｍのポリイミド
２、厚さ１０μｍの銅３からなる実装用フィルム基板と
した。レーザ光照射中は、窒素ガスを１０リットル／分
の流量で基板上の照射部に吹き付けて加工を行なった。The substrate to be processed was a mounting film substrate made of polyimide 2 having a thickness of 30 μm and copper 3 having a thickness of 10 μm. During laser beam irradiation, processing was performed by spraying a nitrogen gas at a flow rate of 10 liters / minute onto an irradiation portion on the substrate.
【００１８】第１の工程においては、図１（Ａ）に示す
ように、波長５１５ｎｍのアルゴンレーザ光を超音波変
調器で０．３ｍｓのパルス幅にして得た第１のパルスレ
ーザ光１を、照射ビーム径４０μｍ、照射間隔１０ｍｓ
で２ショット照射した。照射強度は５００ｋＷ／ｃｍ2
である。In the first step, as shown in FIG. 1A, a first pulse laser beam 1 obtained by converting an argon laser beam having a wavelength of 515 nm into a pulse width of 0.3 ms with an ultrasonic modulator is used. , Irradiation beam diameter 40 μm, irradiation interval 10 ms
For two shots. Irradiation intensity is 500 kW / cm 2
It is.
【００１９】図１（Ｂ）に、第１のパルスレーザ光の照
射後の加工形状を断面図にて示す。図１（Ｂ）におい
て、ビアホールは底部径は４０μｍで、上部径は７０μ
ｍであった。ビアホール側壁部には、厚さ３０μｍ程度
の分解物４が付着し（「付着物」という）、ビアホール
底部にはポリイミドの変性した残留膜７が薄く残ってい
る。FIG. 1B is a sectional view showing a processed shape after the irradiation of the first pulse laser beam. In FIG. 1B, the via hole has a bottom diameter of 40 μm and an upper diameter of 70 μm.
m. A decomposition product 4 having a thickness of about 30 μm adheres to the side wall of the via hole (referred to as “adhered matter”), and a thin residual polyimide-modified film 7 remains at the bottom of the via hole.
【００２０】続いて第２の工程において、図１（Ｃ）に
示すように、ＱｓｗＹＡＧレーザの第２高調波からなる
第２のパルスレーザ光５（照射ビーム径７０μｍ、パル
ス幅１０ｎｓ、照射ピークパワー密度１００ＭＷ／ｃｍ
2）を１ショット照射する。Subsequently, in a second step, as shown in FIG. 1C, a second pulse laser beam 5 (irradiation beam diameter 70 μm, pulse width 10 ns, irradiation peak power) composed of the second harmonic of the QswYAG laser Density 100 MW / cm
2 ) Irradiate one shot.
【００２１】図１（Ｄ）に、第２のパルスレーザ光５照
射後の加工形状を断面図にて示す。図１（Ｄ）に示すよ
うに、ビアホール底部の残留膜と同時にビアホール側壁
の付着物も吹き飛ばされ、側壁の滑らかなビアホール６
を形成することができた。また電子顕微鏡による観察で
も、ビアホール側壁部に付着物の残留は見られなかっ
た。FIG. 1D is a sectional view showing a processed shape after the irradiation of the second pulse laser beam 5. As shown in FIG. 1 (D), deposits on the side wall of the via hole are blown off simultaneously with the residual film on the bottom of the via hole, and the via hole 6 having a smooth side wall is formed.
Could be formed. Also, observation by an electron microscope showed that no deposits remained on the side wall of the via hole.
【００２２】そして、形成したビアホールに電界メッキ
により銅を埋め込んだ所、１００％近い歩留まりで、再
現性よくきれいにビアホールを埋め込むことができた。
このことは、本発明によるビアホールの形状の再現性が
よいこと、及び付着物をきれいに除去できていることを
示す別の証拠である。When copper was buried in the formed via hole by electroplating, the via hole could be buried with good reproducibility at a yield of nearly 100%.
This is another proof that the reproducibility of the shape of the via hole according to the present invention is good and that the attached matter can be removed cleanly.
【００２３】一方、比較例として、第２のパルスレーザ
光５の照射ビーム径を、第１のパルスレーザ光１と同じ
４０μｍにして照射した場合には、低部の残留膜はきれ
いに除去されるのに対し、ビアホール側壁の付着物は除
去できなかった。On the other hand, as a comparative example, when the irradiation is performed with the irradiation beam diameter of the second pulse laser beam 5 set to 40 μm, which is the same as that of the first pulse laser beam 1, the lower residual film is removed clearly. On the other hand, the deposit on the side wall of the via hole could not be removed.
【００２４】[0024]
【実施形態２】以上、上記実施形態の説明では、電子部
品の実装基板へのビアホール形成に本発明を適用した場
合について説明したが、次に、本発明の第２の実施形態
として、プリンタヘッド等への応用において実用に供さ
れる厚さ１００μｍ程度のポリイミドフィルムへの微細
な穴開けの例を以下に説明する。[Embodiment 2] In the above description of the embodiment, the case where the present invention is applied to the formation of a via hole in a mounting board of an electronic component has been described. Next, as a second embodiment of the present invention, a printer head will be described. An example of fine perforations in a polyimide film having a thickness of about 100 μm, which is practically used in application to the like, will be described below.
【００２５】本実施形態においては、前記第１の実施形
態と同様な構成のレーザ光源を用い、ポリイミドフィル
ムへ貫通穴を開けた。In the present embodiment, a through hole was made in the polyimide film using a laser light source having the same configuration as in the first embodiment.
【００２６】第１の工程における第１のパルスレーザ光
１（図１（Ａ）参照）の照射条件は、ビーム径４０μ
ｍ、パルス幅０．３ｍｓ、パルス数６ショット、照射間
隔１０ｍｓ、照射強度５００ｋＷ／ｃｍ2とした。The irradiation condition of the first pulsed laser beam 1 (see FIG. 1A) in the first step is as follows.
m, pulse width 0.3 ms, pulse number 6 shots, irradiation interval 10 ms, irradiation intensity 500 kW / cm 2 .
【００２７】また、第２の工程における第２のパルスレ
ーザ光５（図１（Ｃ）参照）の照射条件は、照射ビーム
径１２０μｍ、パルス幅１０ｎｓ、照射ピークパワー密
度１００ＭＷｃｍ2、１ショットとした。The irradiation conditions of the second pulsed laser beam 5 (see FIG. 1C) in the second step were as follows: irradiation beam diameter 120 μm, pulse width 10 ns, irradiation peak power density 100 MWcm 2 , and one shot. .
【００２８】得られたビアホールは、底径８０μｍ、上
部径１１０μｍであった。本実施形態で用いたポリイミ
ドフィルムは、実装基板とは異なり、熱伝導のよい銅箔
がないために、ポリイミド膜内の熱拡散により、ビアホ
ール径は横方向に拡大するが、第２のパルスレーザ光５
の照射後のビアホール側壁には付着物は残らず、前記第
１の実施形態の場合に比べ、側壁の滑らかさに優れる傾
向が観測された。The obtained via hole had a bottom diameter of 80 μm and an upper diameter of 110 μm. Unlike the mounting substrate, the polyimide film used in the present embodiment does not have a copper foil having good heat conductivity, and the thermal diffusion in the polyimide film increases the via hole diameter in the lateral direction. Light 5
No deposits remained on the side walls of the via holes after the irradiation, and a tendency that the side walls were more excellent in smoothness than in the case of the first embodiment was observed.
【００２９】プリンタヘッド等のビアホール形成では、
インクの流れを制御するため、側壁の滑らかさに優れる
こと、及びビアホールの傾斜角が制御できること、が重
要であるが、本実施形態に係るビアホールの形成方法に
よれば、側壁の滑らかさに優れること、傾斜角は、第１
のパルスレーザ光１のショット数により変化させること
ができるので、実用的に有効な方法であることが判っ
た。In forming a via hole in a printer head or the like,
In order to control the flow of ink, it is important that the side wall is excellent in smoothness and that the inclination angle of the via hole can be controlled. However, according to the via hole forming method according to the present embodiment, the side wall is excellent in smoothness. That the inclination angle is the first
It can be changed according to the number of shots of the pulse laser light 1, and thus it has been found that this is a practically effective method.
【００３０】[0030]
【発明の効果】以上説明したように、本発明によれば、
少ない工程数で微細なビアホールを制御性よく、且つ高
いスループットで形成することができるという効果を有
すると共に、加工工程中にウェットプロセスが不要とさ
れているため、加工対象をひろくでき、且つ製造コスト
を大幅に低減できるという効果を有する。As described above, according to the present invention,
It has the effect that a fine via hole can be formed with high controllability and high throughput with a small number of steps, and since a wet process is not required during the processing step, the processing target can be widened and the manufacturing cost can be increased. Can be greatly reduced.
【図１】本発明の一実施形態の加工工程を工程順に模式
的に示す図である。FIG. 1 is a view schematically showing processing steps according to an embodiment of the present invention in the order of steps.
１ 第１のパルスレーザ光 ２ ポリイミド ３ 銅 ４ 分解物 ５ 第２のパルスレーザ光 ６ ビアホール ７ 残留膜 REFERENCE SIGNS LIST 1 first pulse laser beam 2 polyimide 3 copper 4 decomposition product 5 second pulse laser beam 6 via hole 7 residual film
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０５Ｋ 3/46 Ｈ０１Ｌ 23/14 Ｒ (72)発明者 石川 和幸 東京都港区新橋５丁目11番３号 住友金 属鉱山株式会社内 (56)参考文献 特開 昭52−85596（ＪＰ，Ａ) 特開 昭59−76687（ＪＰ，Ａ) 特開 平１−278796（ＪＰ，Ａ)──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. 6 Identification number Agency reference number FI Technical indication location H05K 3/46 H01L 23/14 R (72) Inventor Kazuyuki Ishikawa 5-11 Shimbashi, Minato-ku, Tokyo No. 3 Sumitomo Metal Mining Co., Ltd. (56) References JP-A-52-85596 (JP, A) JP-A-59-76687 (JP, A) JP-A-1-278796 (JP, A)
Claims (6)
てなるフィルム基板へ、第１の所定時間幅のパルス幅を
有する第１のパルスレーザ光を、１ショット以上、前記
フィルム基板のビアホール形成部に対して照射し、前記
絶縁層のレーザ光照射部を熱分解、又は熱分解に伴うガ
ス発生の少なくともいずれかの反応を起こさせる工程
と、 前記絶縁層における前記第１のパルスレーザ光の照射部
に、第２の所定時間幅の第２のパルスレーザ光を照射し
てビアホール底部の残留膜を蒸散除去する工程と、 を含む有機フィルム加工形成方法において、 前記第２のパルスレーザ光の照射ビーム径を、前記第１
のパルスレーザ光のビーム径よりも大とし、前記絶縁層
の熱変性した領域を覆う範囲にまで拡大したことを特徴
とする有機フィルム加工方法。A first pulsed laser beam having a pulse width of a first predetermined time width is applied to a film substrate formed by laminating an insulating layer containing an organic substance and a metal layer for at least one shot. Irradiating the via-hole forming portion of the insulating layer to thermally decompose the laser beam irradiating portion of the insulating layer, or causing at least one reaction of gas generation accompanying the thermal decomposition, and the first pulse in the insulating layer Irradiating a laser beam irradiation section with a second pulse laser beam having a second predetermined time width to evaporate and remove a residual film at the bottom of the via hole. The irradiation beam diameter of the laser beam is
3. A method of processing an organic film, wherein the beam diameter is larger than the beam diameter of the pulse laser light, and the pulse laser beam is expanded to a range covering the thermally denatured region of the insulating layer.
てなるフィルム基板へ、１０μｓから２０ｍｓの範囲の
パルス幅の第１のパルスレーザ光を、１ショット以上、
前記フィルム基板のビアホール形成部に照射し、前記第
１のパルスレーザ光の照射による前記絶縁層の温度上昇
を介して前記絶縁層の前記第１のパルスレーザ光照射部
を熱分解、又は熱分解に伴うガス発生の少なくともいず
れかの反応を起こさせる工程と、 前記絶縁層における前記第１のパルスレーザ光の照射部
に、パルス幅略２００ｎｓ以下、ピークパワー密度略１
０ＭＷ／ｃｍ2以上の照射強度の第２のパルスレーザ光
を照射して、ビアホール底部の残留膜を蒸散除去する工
程と、 を含み、 前記第２のパルスレーザ光の照射ビーム径を、前記第１
のパルスレーザ光のビーム径よりも大とし、前記絶縁層
の熱変性した領域を覆う範囲にまで拡大したことを特徴
とする有機フィルム加工方法。2. A first pulse laser beam having a pulse width in a range of 10 μs to 20 ms is applied to a film substrate formed by laminating an insulating layer containing an organic substance and a metal layer for one shot or more.
By irradiating the via hole forming portion of the film substrate with the first pulsed laser beam, the first pulsed laser beam irradiated portion of the insulating layer is thermally decomposed or thermally decomposed through the temperature rise of the insulating layer due to the irradiation of the first pulsed laser beam. Causing a reaction of at least one of gas generation accompanying the above, and irradiating the first pulsed laser beam on the insulating layer with a pulse width of about 200 ns or less and a peak power density of about 1
Irradiating a second pulsed laser beam having an irradiation intensity of 0 MW / cm 2 or more to evaporate and remove the residual film at the bottom of the via hole. 1
3. A method of processing an organic film, wherein the beam diameter is larger than the beam diameter of the pulse laser light, and the pulse laser beam is expanded to a range covering the thermally denatured region of the insulating layer.
ィルム」という）へ、第１の所定時間幅のパルス幅を有
する第１のパルスレーザ光を、１ショット以上、前記有
機フィルムのビアホール形成部に対して照射し、前記第
１のパルスレーザ光の照射部において前記有機フィルム
に熱分解、又は熱分解に伴うガス発生の少なくともいず
れかの反応を起こさせる工程と、 前記有機フィルムにおける前記第１のパルスレーザ光の
照射部に、前記第１のパルスレーザ光のビーム径よりも
大の、前記有機フィルムの熱変性した領域を覆う範囲に
まで広げたビーム径と、第２の所定時間幅のパルス幅
と、を有する第２のパルスレーザ光を照射する工程と、 を含むことを特徴とする有機フィルム加工方法。3. A via-hole is formed in a film containing an organic substance (hereinafter, referred to as "organic film") by applying a first pulsed laser beam having a pulse width of a first predetermined time width for at least one shot to the organic film. Irradiating the organic film in the first pulsed laser beam irradiating portion, and causing the organic film to undergo at least one of the following reactions: A first pulse laser beam irradiating part, a beam diameter larger than the beam diameter of the first pulse laser beam, which is expanded to a range covering the thermally denatured region of the organic film, and a second predetermined time width Irradiating a second pulse laser beam having the following pulse width:
ィルム」）へ、１０μｓから２０ｍｓの範囲のパルス幅
の第１のパルスレーザ光を、１ショット以上、前記有機
フィルムのビアホール形成部に対して照射し、前記第１
のパルスレーザ光の照射による前記有機フィルムの温度
上昇を介して、前記有機フィルムの前記第１のパルスレ
ーザ光照射部を熱分解、又は熱分解に伴うガス発生の少
なくともいずれかの反応を起こさせる工程と、 前記有機フィルムにおける前記第１のパルスレーザ光の
照射部に、照射ビーム径を前記第１のパルスレーザ光の
ビーム径よりも大の、前記有機フィルムの熱変性した領
域を覆う範囲にまで拡げたビーム径を有し、パルス幅略
２００ｎｓ以下、ピークパワー密度略１０ＭＷ／ｃｍ2
以上の照射強度を有する第２のパルスレーザ光を照射す
る工程と、 を含むことを特徴とする有機フィルム加工方法。4. A method according to claim 1, wherein a first pulse laser beam having a pulse width in a range of 10 μs to 20 ms is applied to a film containing an organic substance (“organic film”) by one or more shots to a via hole forming portion of the organic film. And irradiate the first
Through the temperature rise of the organic film due to the irradiation of the pulse laser light, the first pulse laser light irradiation part of the organic film is caused to undergo a thermal decomposition or a reaction of at least one of gas generation accompanying the thermal decomposition. The step of irradiating the first pulsed laser beam irradiation portion of the organic film with an irradiation beam diameter larger than the beam diameter of the first pulsed laser beam and covering the heat-denatured region of the organic film. It has a beam diameter expanded to about 200 ns or less in pulse width, and a peak power density of about 10 MW / cm 2
Irradiating a second pulsed laser beam having the above-described irradiation intensity.
を特徴とする請求項１乃至請求項４のいずれか一に記載
の有機フィルム加工方法。5. The method of processing an organic film according to claim 1, wherein a gas is blown onto the laser beam irradiation section.
が、前記第１のパルスレーザ光の照射により生成された
開口側壁部の熱分解付着物の、前記有機物質を含む絶縁
層又はフィルムの表面側の、外径にまで及ぶように設定
されたことを特徴とする請求項１から請求項４のいずれ
か一に記載の有機フィルム加工方法。6. An insulating layer or film containing the organic substance of the pyrolytic deposit on the side wall of the opening generated by the irradiation of the first pulsed laser beam, the irradiation beam diameter of the second pulsed laser beam being applied. The method for processing an organic film according to any one of claims 1 to 4, wherein the surface is set so as to reach the outer diameter.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8071435A JP2710608B2 (en) | 1996-03-01 | 1996-03-01 | Organic film processing method |
| SG1997000504A SG55279A1 (en) | 1996-03-01 | 1997-02-27 | Method of working an organic film |
| TW086102390A TW317074B (en) | 1996-03-01 | 1997-02-27 | |
| DE19708254A DE19708254A1 (en) | 1996-03-01 | 1997-02-28 | Perforating organic film by two successive pulsed laser beams |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8071435A JP2710608B2 (en) | 1996-03-01 | 1996-03-01 | Organic film processing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH09239573A JPH09239573A (en) | 1997-09-16 |
| JP2710608B2 true JP2710608B2 (en) | 1998-02-10 |
Family
ID=13460466
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8071435A Expired - Fee Related JP2710608B2 (en) | 1996-03-01 | 1996-03-01 | Organic film processing method |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2710608B2 (en) |
| DE (1) | DE19708254A1 (en) |
| SG (1) | SG55279A1 (en) |
| TW (1) | TW317074B (en) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2766654B1 (en) * | 1997-07-28 | 2005-05-20 | Matsushita Electric Works Ltd | METHOD FOR MANUFACTURING A CIRCUIT BOARD |
| DE19739450A1 (en) * | 1997-09-09 | 1999-03-18 | Deutsche Telekom Ag | Arrangement for input coupling of light into a light conducting fiber |
| JPH11238831A (en) | 1997-12-16 | 1999-08-31 | Shinko Electric Ind Co Ltd | Tape carrier and its manufacture |
| JP4502092B2 (en) * | 2000-03-15 | 2010-07-14 | 住友金属鉱山株式会社 | Processing method of laminated film base material |
| DE50313280D1 (en) * | 2003-10-06 | 2011-01-05 | Siemens Ag | Method of making a hole |
| DE102004047798A1 (en) * | 2004-09-29 | 2006-04-06 | Robert Bosch Gmbh | Method for cleaning a resonator |
| EP1806203A1 (en) * | 2006-01-10 | 2007-07-11 | Siemens Aktiengesellschaft | Method of producing a hole |
| AT12316U1 (en) | 2008-10-30 | 2012-03-15 | Austria Tech & System Tech | Method for integrating an electronic component into a printed circuit board |
| JP6690803B1 (en) * | 2018-08-03 | 2020-04-28 | 大日本印刷株式会社 | Thermal transfer image receiving sheet |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1986002301A1 (en) * | 1984-10-16 | 1986-04-24 | Advanced Laser Systems, Inc. | Laser drilling apparatus and method |
| DE3742770A1 (en) * | 1987-12-17 | 1989-06-29 | Akzo Gmbh | MICRO / ULTRAFILTRATION MEMBRANES WITH DEFINED PORO SIZE BY IRRADIATION WITH PULSE LASERS AND METHOD FOR THE PRODUCTION THEREOF |
| US5319183A (en) * | 1992-02-18 | 1994-06-07 | Fujitsu Limited | Method and apparatus for cutting patterns of printed wiring boards and method and apparatus for cleaning printed wiring boards |
-
1996
- 1996-03-01 JP JP8071435A patent/JP2710608B2/en not_active Expired - Fee Related
-
1997
- 1997-02-27 TW TW086102390A patent/TW317074B/zh not_active IP Right Cessation
- 1997-02-27 SG SG1997000504A patent/SG55279A1/en unknown
- 1997-02-28 DE DE19708254A patent/DE19708254A1/en not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| TW317074B (en) | 1997-10-01 |
| DE19708254A1 (en) | 1997-09-04 |
| SG55279A1 (en) | 1998-12-21 |
| JPH09239573A (en) | 1997-09-16 |
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