JP2002126886A - Laser perforating device - Google Patents
Laser perforating deviceInfo
- Publication number
- JP2002126886A JP2002126886A JP2001254981A JP2001254981A JP2002126886A JP 2002126886 A JP2002126886 A JP 2002126886A JP 2001254981 A JP2001254981 A JP 2001254981A JP 2001254981 A JP2001254981 A JP 2001254981A JP 2002126886 A JP2002126886 A JP 2002126886A
- Authority
- JP
- Japan
- Prior art keywords
- laser
- pulse
- drilling
- drilling apparatus
- harmonic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、レーザ光を用いて
プリント回路基板のような樹脂層に穴あけ加工を行うた
めのレーザ穴あけ加工装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a laser drilling apparatus for drilling a resin layer such as a printed circuit board using a laser beam.
【0002】[0002]
【従来の技術】電子機器の小型化、高密度実装化に伴
う、プリント回路基板の高密度化の要求に応えて、近
年、複数のプリント回路基板を積層した多層プリント回
路基板が登場してきた。このような多層プリント回路基
板では、上下に積層されたプリント回路基板間で導電層
(通常、銅パターン)同士を電気的に接続する必要があ
る。このような接続は、プリント回路基板の絶縁樹脂層
(ポリイミド、エポキシ系樹脂等のポリマー)に、下層
の導電層に達するバイアホールと呼ばれる穴を形成し、
その穴の内部にメッキを施すことによって実現される。2. Description of the Related Art In response to the demand for higher density of printed circuit boards in accordance with the miniaturization and high-density mounting of electronic devices, recently, multilayer printed circuit boards in which a plurality of printed circuit boards are stacked have appeared. In such a multilayer printed circuit board, it is necessary to electrically connect conductive layers (typically, copper patterns) between printed circuit boards stacked one above another. Such a connection forms a hole called a via hole that reaches the underlying conductive layer in the insulating resin layer (polymer such as polyimide or epoxy resin) of the printed circuit board,
This is realized by plating the inside of the hole.
【0003】このような穴あけ加工に、最近ではレーザ
光が利用されはじめている。レーザ光を利用したレーザ
穴あけ加工装置は、機械的な微細ドリルを用いる機械加
工に比べて加工速度や、穴の径の微細化に対応できる点
で優れている。レーザ光としては、エキシマレーザや、
CO2 レーザ、YAG(イットリウム・アルミニウム・
ガーネット)レーザ等が一般に利用されている。Recently, laser light has begun to be used for such drilling. A laser drilling apparatus using a laser beam is superior to a mechanical processing using a mechanical fine drill in that the processing speed and the diameter of a hole can be reduced. As the laser light, excimer laser,
CO 2 laser, YAG (yttrium aluminum
Garnet) lasers and the like are generally used.
【0004】[0004]
【発明が解決しようとする課題】ここで、エキシマレー
ザについて言えば、紫外光の光源として使用されるのが
主流であり、ガス種をKrF、ArF、XeF、XeC
lと変更することで発振波長を変更することができる。
しかし、これらのレーザはガスレーザであり、その発振
時間、すなわちパルス幅は一般的には10〜20(ns
ec)程度で、極めて短かい。従って、レーザビームを
加工対象物に照射するとレーザビームは加工対象物の表
面近傍で吸収され、深さを有する材料に対しては、穿孔
能力は、熱加工であるCO2 レーザあるいはYAGレー
ザに比べ低下する。基本的に波長の長短によって材料に
対する吸収係数が異なるために、1パルス当りの加工深
さは制限される。言い換えれば、波長が短かくなるに従
い、加工深さは低下する。The excimer laser is mainly used as a light source for ultraviolet light, and the gas species is KrF, ArF, XeF, XeC.
By changing to l, the oscillation wavelength can be changed.
However, these lasers are gas lasers, and their oscillation time, that is, the pulse width is generally 10 to 20 (ns).
ec), which is extremely short. Therefore, when a laser beam is applied to a workpiece, the laser beam is absorbed in the vicinity of the surface of the workpiece. For a material having a depth, the drilling ability is smaller than that of a CO 2 laser or a YAG laser which is thermal processing. descend. Basically, the processing depth per pulse is limited because the absorption coefficient of the material differs depending on the wavelength. In other words, the processing depth decreases as the wavelength becomes shorter.
【0005】従って、CO2 レーザ、Nd;YAGレー
ザに比べて、エキシマレーザやNd;YLFレーザ、N
d;YAGレーザ、Nd;YVO4 レーザの3倍波、4
倍波、5倍波(第3高調波、第4高調波、第5高調波)
の1パルス当りの加工速度(穿孔速度)は低くなる。こ
のため、これらの紫外光レーザを光源とするプリント回
路基板等の穴あけ加工装置を構成すると、その波長に依
存した形で処理能力、特に加工速度が低下するという欠
点を有していた。Accordingly, as compared with the CO 2 laser and the Nd; YAG laser, the excimer laser and the Nd;
d: YAG laser, Nd: 3rd harmonic of YVO 4 laser, 4
5th harmonic (3rd harmonic, 4th harmonic, 5th harmonic)
, The machining speed (perforation speed) per pulse becomes lower. For this reason, when a drilling apparatus for a printed circuit board or the like using these ultraviolet lasers as a light source is configured, there is a disadvantage that the processing ability, particularly the processing speed, is reduced in a form depending on the wavelength.
【0006】そこで、本発明の課題は、紫外光パルスレ
ーザを用いてプリント回路基板等に対して穴あけ加工す
る穴あけ加工装置の加工速度の向上を図ることにある。SUMMARY OF THE INVENTION It is an object of the present invention to improve the processing speed of a drilling apparatus for drilling a printed circuit board or the like using an ultraviolet pulse laser.
【0007】[0007]
【課題を解決するための手段】本発明は、樹脂基板にレ
ーザ光を照射して穴あけを行う穴あけ加工装置におい
て、前記レーザ光の発生手段としてNd;YLFパルス
レーザあるいはNd;YAGパルスレーザの高調波を発
生する手段を備え、該パルスレーザのパルス幅が100
〜300(nsec)に設定されていることを特徴とす
る。According to the present invention, there is provided a drilling apparatus for piercing a resin substrate by irradiating a laser beam with a laser beam, wherein the laser beam generating means comprises a Nd; YLF pulse laser or a harmonic of an Nd; YAG pulse laser. Means for generating a wave, wherein the pulse width of the pulse laser is 100
300300 (nsec).
【0008】本レーザ穴あけ加工装置においては、前記
レーザ光の光路にマスクが配置され、該マスクと前記樹
脂基板との間の光路には前記マスクの像を前記樹脂基板
に縮小投影させるためのfθレンズが配置される。In this laser drilling apparatus, a mask is arranged in the optical path of the laser beam, and fθ for reducing and projecting the image of the mask on the resin substrate is provided in the optical path between the mask and the resin substrate. A lens is arranged.
【0009】[0009]
【発明の実施の形態】以下に、本発明の実施の形態につ
いて説明する。本発明では、紫外光レーザの加工速度を
向上させることを目的として、レーザ発振器の構成に起
因するパルス幅に着目した。すなわち、レーザ発振器に
おいては、共振器を構成する一対のミラーの間隔を調整
することでパルス幅を調整することができる。Embodiments of the present invention will be described below. The present invention focuses on the pulse width due to the configuration of the laser oscillator for the purpose of improving the processing speed of the ultraviolet laser. That is, in the laser oscillator, the pulse width can be adjusted by adjusting the interval between the pair of mirrors forming the resonator.
【0010】ここでは、パルス幅の異なるレーザ、即
ち、エキシマレーザであるXeFレーザ(波長351n
m)を用いた穴あけ加工装置(比較例)と、Nd;YL
Fパルスレーザの第3高調波(波長351nm)を用い
た穴あけ加工装置(本発明)について両者の穴あけ加工
性能を比較した。Here, lasers having different pulse widths, that is, XeF lasers (wavelengths of 351 n
m), a drilling machine (comparative example), and Nd; YL
The drilling performance of the drilling apparatus (the present invention) using the third harmonic (wavelength 351 nm) of the F pulse laser was compared.
【0011】両者のパルス幅はXeFレーザが約20
(nsec)であり、Nd;YLFパルスレーザの第3
高調波を約170(nsec)とした。The pulse width of both is about 20 for the XeF laser.
(Nsec) and the third of the Nd; YLF pulse laser.
The harmonic was set to about 170 (nsec).
【0012】図1は、本発明による穴あけ加工装置のシ
ステム構成を概略的に示す。レーザ発振器11にはN
d;YLFパルスレーザが使用され、特にその第3高調
波が使用される。このレーザ光はミラー12、アッテネ
ータ13、ミラー14を介してマスク15に照射され
る。このマスクの像をミラー16を経由し、fθレンズ
と呼ばれる加工レンズ17で加工対象物18上に縮小投
影させる。この加工対象物18はXYステージ19上に
配され、加工対象物18の任意の位置に穿孔を行うこと
ができる。FIG. 1 schematically shows a system configuration of a drilling apparatus according to the present invention. The laser oscillator 11 has N
d; a YLF pulse laser is used, especially its third harmonic. The laser beam is applied to the mask 15 via the mirror 12, the attenuator 13, and the mirror 14. The image of this mask is reduced and projected on a processing object 18 via a mirror 16 by a processing lens 17 called an fθ lens. The processing target 18 is arranged on an XY stage 19, and can pierce an arbitrary position of the processing target 18.
【0013】なお、比較例としての穴あけ加工装置を構
成する場合にも図1と同様の構成にされるが、レーザ発
振器にはXeFレーザが用いられる。特に、アッテネー
タ13は、出力の大きなXeFレーザのエネルギーを調
整するために配されるものであり、本発明のNd;YL
Fパルスレーザの場合には除去されても良い。[0013] When a drilling apparatus as a comparative example is configured, the configuration is the same as that of FIG. 1, but an XeF laser is used as a laser oscillator. In particular, the attenuator 13 is provided for adjusting the energy of the XeF laser having a large output, and the Nd;
In the case of the F pulse laser, it may be removed.
【0014】上記のようにして、加工対象物18上のレ
ーザビームのフルエンス(エネルギー密度)をほぼ同一
になるように調整した。As described above, the fluence (energy density) of the laser beam on the object 18 is adjusted to be substantially the same.
【0015】加工対象物18としてはポリイミドフィル
ム(カプトンフィルム厚さ100μm+ )を用いた。両
者のレーザに波長の違いはなく、両者の差異はパルス幅
のみである。XeFレーザ及びNd;YLFパルスレー
ザの第3高調波を用いて双方とも材料面にて10(J/
cm2 )の照射エネルギーで加工を試みた。その結果、
1パルス当りの加工深さは前者(比較例)が約2(μ
m)、後者(本発明)の場合は約7(μm)であった。As the processing object 18, a polyimide film (Kapton film thickness 100 μm + ) was used. There is no difference in wavelength between the two lasers, and the only difference between them is the pulse width. Using the third harmonic of the XeF laser and the Nd; YLF pulse laser, both were 10 (J /
Processing was attempted with irradiation energy of 2 cm 2 ). as a result,
The processing depth per pulse was about 2 (μm) for the former (comparative example).
m) and about 7 (μm) in the case of the latter (the present invention).
【0016】上記の結果から、Nd;YLFパルスレー
ザの第3高調波による穴あけ加工装置の方が穿孔能力が
高いことが判る。この理由はパルス幅を短かくするとレ
ーザ照射が短時間に終了し、光エネルギーが加工対象物
の表面近傍に蓄積され、材料への熱量の浸透が低い。こ
れに対し、パルス幅が長い場合は、材料への熱拡散が大
きいため、熱によるアブレーション反応あるいは照射部
分の熱変質が加速し、その結果、穿孔速度が向上するも
のと推察される。これらは、Nd;YLFパルスレーザ
あるいはNd;YAGパルスレーザの第2〜第5高調波
にも言えることである。例えば、Nd;YAGパルスレ
ーザの第3高調波でパルス幅150(nsec)として
も穿孔速度が上昇した。そして、好ましいパルス幅の範
囲は、100〜300(nsec)であることが確認さ
れている。From the above results, it can be understood that the drilling apparatus using the third harmonic of the Nd; YLF pulse laser has higher drilling ability. The reason is that when the pulse width is shortened, laser irradiation is completed in a short time, light energy is accumulated near the surface of the object to be processed, and the amount of heat absorbed into the material is low. On the other hand, when the pulse width is long, thermal diffusion into the material is large, so that the ablation reaction due to heat or thermal deterioration of the irradiated portion is accelerated, and as a result, it is presumed that the drilling speed is improved. These also apply to the second to fifth harmonics of the Nd; YLF pulse laser or the Nd; YAG pulse laser. For example, the drilling speed increased even when the pulse width was 150 (nsec) at the third harmonic of the Nd; YAG pulse laser. It has been confirmed that a preferable range of the pulse width is 100 to 300 (nsec).
【0017】なお、本発明は、穴あけ加工のみならず、
ポリマー等の有機材料の穿孔、表面ハク離処理、表面改
質処理などへの応用が考えられる。The present invention is not limited to drilling,
Applications to perforation of organic materials such as polymers, surface debonding treatment, surface modification treatment, and the like can be considered.
【0018】[0018]
【発明の効果】以上説明してきたように、本発明によれ
ば、紫外光パルスレーザ、特にNd;YLFパルスレー
ザやNd;YAGパルスレーザの高調波を用いてプリン
ト回路基板等に対して穴あけ加工する際、パルスレーザ
のパルス幅を100〜300(nsec)とすることで
加工速度(穿孔速度)の向上を図ることができる。As described above, according to the present invention, a hole is drilled in a printed circuit board or the like by using an ultraviolet pulse laser, particularly a harmonic of an Nd; YLF pulse laser or a Nd; YAG pulse laser. At this time, the processing speed (perforation speed) can be improved by setting the pulse width of the pulse laser to 100 to 300 (nsec).
【図1】本発明によるレーザ穴あけ加工装置のシステム
構成を概略的に示した図である。FIG. 1 is a diagram schematically showing a system configuration of a laser drilling apparatus according to the present invention.
11 レーザ発振器 12、14、16 ミラー 13 アッテネータ 15 マスク 17 加工レンズ 18 加工対象物 19 XYステージ Reference Signs List 11 laser oscillator 12, 14, 16 mirror 13 attenuator 15 mask 17 processing lens 18 processing object 19 XY stage
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 FI テーマコート゛(参考) H05K 3/00 H05K 3/00 N // H05K 3/46 H05K 3/46 N X B23K 101:42 B23K 101:42 ──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. 7 Identification code FI Theme coat ゛ (Reference) H05K 3/00 H05K 3/00 N // H05K 3/46 H05K 3/46 N X B23K 101: 42 B23K 101 : 42
Claims (2)
行う穴あけ加工装置において、 前記レーザ光の発生手段としてNd;YLFパルスレー
ザあるいはNd;YAGパルスレーザの高調波を発生す
る手段を備え、 該パルスレーザのパルス幅が100〜300(nse
c)に設定されていることを特徴とするレーザ穴あけ加
工装置。1. A drilling apparatus for irradiating a resin substrate with laser light to perform drilling, comprising: means for generating a harmonic of Nd; YLF pulse laser or Nd; YAG pulse laser as a means for generating the laser light; The pulse width of the pulse laser is 100 to 300 (nse
c) a laser drilling apparatus set in c).
おいて、前記レーザ光の光路にマスクが配置され、該マ
スクと前記樹脂基板との間の光路には前記マスクの像を
前記樹脂基板に縮小投影させるためのfθレンズが配置
されていることを特徴とするレーザ穴あけ加工装置。2. A laser drilling apparatus according to claim 1, wherein a mask is arranged in an optical path of said laser beam, and an image of said mask is reduced to said resin substrate in an optical path between said mask and said resin substrate. A laser drilling apparatus, wherein an fθ lens for projection is arranged.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001254981A JP3479890B2 (en) | 2001-08-24 | 2001-08-24 | Laser drilling machine |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001254981A JP3479890B2 (en) | 2001-08-24 | 2001-08-24 | Laser drilling machine |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP02819899A Division JP3245820B2 (en) | 1999-02-05 | 1999-02-05 | Laser drilling method |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2002126886A true JP2002126886A (en) | 2002-05-08 |
JP3479890B2 JP3479890B2 (en) | 2003-12-15 |
Family
ID=19083046
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2001254981A Expired - Fee Related JP3479890B2 (en) | 2001-08-24 | 2001-08-24 | Laser drilling machine |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3479890B2 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010087483A1 (en) | 2009-02-02 | 2010-08-05 | 旭硝子株式会社 | Glass substrate for semiconductor device member, and process for producing glass substrate for semiconductor device member |
JP2011067873A (en) * | 2010-12-06 | 2011-04-07 | Mitsuboshi Diamond Industrial Co Ltd | Method for machining line by laser beam, and laser beam machining device |
WO2011132603A1 (en) | 2010-04-20 | 2011-10-27 | 旭硝子株式会社 | Glass substrate for forming semiconductor device via |
WO2011132600A1 (en) | 2010-04-20 | 2011-10-27 | 旭硝子株式会社 | Glass substrate for semiconductor device via |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017156700A (en) | 2016-03-04 | 2017-09-07 | 株式会社ジャパンディスプレイ | Display device |
-
2001
- 2001-08-24 JP JP2001254981A patent/JP3479890B2/en not_active Expired - Fee Related
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010087483A1 (en) | 2009-02-02 | 2010-08-05 | 旭硝子株式会社 | Glass substrate for semiconductor device member, and process for producing glass substrate for semiconductor device member |
US8491983B2 (en) | 2009-02-02 | 2013-07-23 | Asahi Glass Company, Limited | Glass substrate for semiconductor device component and process for producing glass substrate for semiconductor device component |
WO2011132603A1 (en) | 2010-04-20 | 2011-10-27 | 旭硝子株式会社 | Glass substrate for forming semiconductor device via |
WO2011132600A1 (en) | 2010-04-20 | 2011-10-27 | 旭硝子株式会社 | Glass substrate for semiconductor device via |
JP2011067873A (en) * | 2010-12-06 | 2011-04-07 | Mitsuboshi Diamond Industrial Co Ltd | Method for machining line by laser beam, and laser beam machining device |
Also Published As
Publication number | Publication date |
---|---|
JP3479890B2 (en) | 2003-12-15 |
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