TW317005B - - Google Patents
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- Publication number
- TW317005B TW317005B TW84113422A TW84113422A TW317005B TW 317005 B TW317005 B TW 317005B TW 84113422 A TW84113422 A TW 84113422A TW 84113422 A TW84113422 A TW 84113422A TW 317005 B TW317005 B TW 317005B
- Authority
- TW
- Taiwan
- Prior art keywords
- grinding
- insulating film
- wafer
- wiring
- chemical mechanical
- Prior art date
Links
- 238000000227 grinding Methods 0.000 claims description 207
- 238000000034 method Methods 0.000 claims description 99
- 239000004065 semiconductor Substances 0.000 claims description 86
- 230000008569 process Effects 0.000 claims description 70
- 238000005498 polishing Methods 0.000 claims description 69
- 239000000126 substance Substances 0.000 claims description 49
- 238000004519 manufacturing process Methods 0.000 claims description 41
- 239000013078 crystal Substances 0.000 claims description 35
- 230000015572 biosynthetic process Effects 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 18
- 238000012544 monitoring process Methods 0.000 claims description 14
- 230000008859 change Effects 0.000 claims description 11
- 230000002079 cooperative effect Effects 0.000 claims description 11
- 238000005516 engineering process Methods 0.000 claims description 10
- 238000001514 detection method Methods 0.000 claims description 8
- 238000009413 insulation Methods 0.000 claims description 7
- 238000010586 diagram Methods 0.000 claims description 5
- 238000007639 printing Methods 0.000 claims description 5
- 238000009434 installation Methods 0.000 claims description 2
- 239000012528 membrane Substances 0.000 claims description 2
- 230000000737 periodic effect Effects 0.000 claims 2
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 claims 1
- 238000003889 chemical engineering Methods 0.000 claims 1
- 238000007689 inspection Methods 0.000 claims 1
- 238000012856 packing Methods 0.000 claims 1
- 239000010408 film Substances 0.000 description 105
- 239000010410 layer Substances 0.000 description 61
- 239000011295 pitch Substances 0.000 description 55
- 239000004744 fabric Substances 0.000 description 17
- 230000000875 corresponding effect Effects 0.000 description 13
- 239000002184 metal Substances 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000011229 interlayer Substances 0.000 description 11
- 238000001228 spectrum Methods 0.000 description 10
- 230000007423 decrease Effects 0.000 description 7
- 238000011282 treatment Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 230000002238 attenuated effect Effects 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 230000033001 locomotion Effects 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000009991 scouring Methods 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 238000009423 ventilation Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 208000030984 MIRAGE syndrome Diseases 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 241000283068 Tapiridae Species 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229940075614 colloidal silicon dioxide Drugs 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 239000013256 coordination polymer Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000013013 elastic material Substances 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 235000019353 potassium silicate Nutrition 0.000 description 1
- TVLSRXXIMLFWEO-UHFFFAOYSA-N prochloraz Chemical compound C1=CN=CN1C(=O)N(CCC)CCOC1=C(Cl)C=C(Cl)C=C1Cl TVLSRXXIMLFWEO-UHFFFAOYSA-N 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000033764 rhythmic process Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Landscapes
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7320997A JPH09139369A (ja) | 1995-11-15 | 1995-11-15 | 半導体装置の製造方法およびそれに使用される研磨装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW317005B true TW317005B (enExample) | 1997-10-01 |
Family
ID=18127638
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW84113422A TW317005B (enExample) | 1995-11-15 | 1995-12-15 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH09139369A (enExample) |
| TW (1) | TW317005B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI773810B (zh) * | 2017-09-05 | 2022-08-11 | 日商荏原製作所股份有限公司 | 具備功能性晶片之基板的研磨方法、使包含電腦之控制裝置執行該方法之程式、電腦可讀取之記錄媒介、及基板 |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11219922A (ja) | 1998-02-03 | 1999-08-10 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
| DE112010004635B4 (de) | 2009-12-01 | 2019-03-21 | Sumco Corporation | Wafer-Polierverfahren |
| JP7504713B2 (ja) | 2020-08-19 | 2024-06-24 | キオクシア株式会社 | 半導体製造装置及び半導体製造方法 |
-
1995
- 1995-11-15 JP JP7320997A patent/JPH09139369A/ja active Pending
- 1995-12-15 TW TW84113422A patent/TW317005B/zh active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI773810B (zh) * | 2017-09-05 | 2022-08-11 | 日商荏原製作所股份有限公司 | 具備功能性晶片之基板的研磨方法、使包含電腦之控制裝置執行該方法之程式、電腦可讀取之記錄媒介、及基板 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH09139369A (ja) | 1997-05-27 |
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