JPH09139369A - 半導体装置の製造方法およびそれに使用される研磨装置 - Google Patents

半導体装置の製造方法およびそれに使用される研磨装置

Info

Publication number
JPH09139369A
JPH09139369A JP7320997A JP32099795A JPH09139369A JP H09139369 A JPH09139369 A JP H09139369A JP 7320997 A JP7320997 A JP 7320997A JP 32099795 A JP32099795 A JP 32099795A JP H09139369 A JPH09139369 A JP H09139369A
Authority
JP
Japan
Prior art keywords
polishing
end point
insulating film
group
vibration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7320997A
Other languages
English (en)
Japanese (ja)
Inventor
Takeshi Kimura
剛 木村
Yuichiro Taguma
祐一郎 田熊
Hidefumi Ito
秀文 伊藤
Nobuhiro Konishi
信博 小西
Shinichiro Mitani
真一郎 三谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP7320997A priority Critical patent/JPH09139369A/ja
Priority to TW84113422A priority patent/TW317005B/zh
Publication of JPH09139369A publication Critical patent/JPH09139369A/ja
Pending legal-status Critical Current

Links

Landscapes

  • Mechanical Treatment Of Semiconductor (AREA)
JP7320997A 1995-11-15 1995-11-15 半導体装置の製造方法およびそれに使用される研磨装置 Pending JPH09139369A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP7320997A JPH09139369A (ja) 1995-11-15 1995-11-15 半導体装置の製造方法およびそれに使用される研磨装置
TW84113422A TW317005B (enExample) 1995-11-15 1995-12-15

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7320997A JPH09139369A (ja) 1995-11-15 1995-11-15 半導体装置の製造方法およびそれに使用される研磨装置

Publications (1)

Publication Number Publication Date
JPH09139369A true JPH09139369A (ja) 1997-05-27

Family

ID=18127638

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7320997A Pending JPH09139369A (ja) 1995-11-15 1995-11-15 半導体装置の製造方法およびそれに使用される研磨装置

Country Status (2)

Country Link
JP (1) JPH09139369A (enExample)
TW (1) TW317005B (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6303944B1 (en) 1998-02-03 2001-10-16 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing a semiconductor device having a monitor pattern, and a semiconductor device manufactured thereby
WO2011068236A1 (ja) * 2009-12-01 2011-06-09 株式会社Sumco ウェーハの研磨方法
US11769699B2 (en) 2020-08-19 2023-09-26 Kioxia Corporation Semiconductor manufacturing apparatus and semiconductor manufacturing method

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6860451B2 (ja) * 2017-09-05 2021-04-14 株式会社荏原製作所 機能性チップを備える基板を研磨する方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6303944B1 (en) 1998-02-03 2001-10-16 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing a semiconductor device having a monitor pattern, and a semiconductor device manufactured thereby
US6602725B2 (en) 1998-02-03 2003-08-05 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing a semiconductor device having a monitor pattern, and a semiconductor device manufactured thereby
WO2011068236A1 (ja) * 2009-12-01 2011-06-09 株式会社Sumco ウェーハの研磨方法
JP5533884B2 (ja) * 2009-12-01 2014-06-25 株式会社Ｓｕｍｃｏ ウェーハの研磨方法
US8900033B2 (en) 2009-12-01 2014-12-02 Sumco Corporation Wafer polishing method
US11769699B2 (en) 2020-08-19 2023-09-26 Kioxia Corporation Semiconductor manufacturing apparatus and semiconductor manufacturing method

Also Published As

Publication number Publication date
TW317005B (enExample) 1997-10-01

Similar Documents

Publication Publication Date Title
JP3633062B2 (ja) 研磨方法および研磨装置
US5655951A (en) Method for selectively reconditioning a polishing pad used in chemical-mechanical planarization of semiconductor wafers
JP3913969B2 (ja) 窓漏れの少ない透明窓を有するケミカルメカニカルポリシング装置用ポリシングパッド
US5597442A (en) Chemical/mechanical planarization (CMP) endpoint method using measurement of polishing pad temperature
US5647952A (en) Chemical/mechanical polish (CMP) endpoint method
US5609718A (en) Method and apparatus for measuring a change in the thickness of polishing pads used in chemical-mechanical planarization of semiconductor wafers
CN100503169C (zh) 在化学机械抛光中为了处理状态和控制检测晶片表面特性转变的装置和方法
CN100378940C (zh) 半导体晶片磨光的方法和系统
US5643050A (en) Chemical/mechanical polish (CMP) thickness monitor
US5668063A (en) Method of planarizing a layer of material
JP2004531077A (ja) 研磨パッドをコンディショニングする構造および方法
KR100255063B1 (ko) 반도체 장치의 평탄화 방법 및 장치
US20050118839A1 (en) Chemical mechanical polish process control method using thermal imaging of polishing pad
TW200824841A (en) Polishing pad with window having multiple portions
CN107953260B (zh) 化学机械抛光方法、制造半导体器件的方法和半导体制造装置
KR20050057506A (ko) 멀티-스텝 시퀀스에서의 금속 잔류물 검출 및 매핑용시스템 및 방법
US20080242196A1 (en) Method and system for controlling chemical mechanical polishing by taking zone specific substrate data into account
JPH09139369A (ja) 半導体装置の製造方法およびそれに使用される研磨装置
JP2024525565A (ja) 化学機械研磨中の音響信号による平坦化の検出
JP2004106123A (ja) 研磨方法、ｃｍｐ装置及び膜厚測定装置
US9502318B2 (en) Polish apparatus, polish method, and method of manufacturing semiconductor device
US20020037649A1 (en) Method for carrying out planarization processing
JP3189076B2 (ja) 研磨方法及び研磨装置
JPH10315124A (ja) 研磨方法および研磨装置
JP2004014999A (ja) Ｃｍｐ研磨装置及び研磨方法

Legal Events

Date Code Title Description
FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090222

Year of fee payment: 7

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090222

Year of fee payment: 7

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100222

Year of fee payment: 8

FPAY Renewal fee payment (prs date is renewal date of database)

Year of fee payment: 8

Free format text: PAYMENT UNTIL: 20100222

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110222

Year of fee payment: 9

LAPS Cancellation because of no payment of annual fees