TW316332B - - Google Patents
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- Publication number
- TW316332B TW316332B TW085116041A TW85116041A TW316332B TW 316332 B TW316332 B TW 316332B TW 085116041 A TW085116041 A TW 085116041A TW 85116041 A TW85116041 A TW 85116041A TW 316332 B TW316332 B TW 316332B
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor layer
- item
- patent application
- npn
- base
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 claims description 21
- 239000013078 crystal Substances 0.000 claims description 20
- 238000002513 implantation Methods 0.000 claims description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 239000007943 implant Substances 0.000 claims description 6
- 238000002955 isolation Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims 4
- 241000406668 Loxodonta cyclotis Species 0.000 claims 2
- 239000004020 conductor Substances 0.000 claims 2
- 241000270295 Serpentes Species 0.000 claims 1
- 238000009434 installation Methods 0.000 claims 1
- 238000000034 method Methods 0.000 description 16
- 230000008569 process Effects 0.000 description 14
- 230000015556 catabolic process Effects 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 230000001172 regenerating effect Effects 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000000872 buffer Substances 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000001960 triggered effect Effects 0.000 description 3
- OQCFWECOQNPQCG-UHFFFAOYSA-N 1,3,4,8-tetrahydropyrimido[4,5-c]oxazin-7-one Chemical compound C1CONC2=C1C=NC(=O)N2 OQCFWECOQNPQCG-UHFFFAOYSA-N 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910052704 radon Inorganic materials 0.000 description 2
- SYUHGPGVQRZVTB-UHFFFAOYSA-N radon atom Chemical compound [Rn] SYUHGPGVQRZVTB-UHFFFAOYSA-N 0.000 description 2
- 101100101158 Caenorhabditis elegans ttm-2 gene Proteins 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000002079 cooperative effect Effects 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
- H10D89/711—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using bipolar transistors as protective elements
- H10D89/713—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using bipolar transistors as protective elements including a PNP transistor and a NPN transistor, wherein each of said transistors has its base region coupled to the collector region of the other transistor, e.g. silicon controlled rectifier [SCR] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
- H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
- H10D84/0191—Manufacturing their doped wells
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US452795P | 1995-09-29 | 1995-09-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW316332B true TW316332B (enExample) | 1997-09-21 |
Family
ID=21711220
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW085116041A TW316332B (enExample) | 1995-09-29 | 1996-12-26 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPH09191082A (enExample) |
| KR (1) | KR970018516A (enExample) |
| TW (1) | TW316332B (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3317285B2 (ja) | 1999-09-09 | 2002-08-26 | 日本電気株式会社 | 半導体保護装置とこれを含む半導体装置及びそれらの製造方法 |
| TWI258838B (en) | 2004-04-23 | 2006-07-21 | Nec Electronics Corp | Electrostatic protection device |
| JP5203850B2 (ja) | 2008-08-22 | 2013-06-05 | パナソニック株式会社 | 静電気保護素子 |
-
1996
- 1996-09-30 KR KR1019960042846A patent/KR970018516A/ko not_active Ceased
- 1996-09-30 JP JP8293083A patent/JPH09191082A/ja active Pending
- 1996-12-26 TW TW085116041A patent/TW316332B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| JPH09191082A (ja) | 1997-07-22 |
| KR970018516A (ko) | 1997-04-30 |
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