TW312855B - - Google Patents
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- Publication number
- TW312855B TW312855B TW085113607A TW85113607A TW312855B TW 312855 B TW312855 B TW 312855B TW 085113607 A TW085113607 A TW 085113607A TW 85113607 A TW85113607 A TW 85113607A TW 312855 B TW312855 B TW 312855B
- Authority
- TW
- Taiwan
- Prior art keywords
- film
- electrode
- semiconductor device
- item
- patent application
- Prior art date
Links
- 239000010931 gold Substances 0.000 claims description 34
- 239000002184 metal Substances 0.000 claims description 27
- 229910052751 metal Inorganic materials 0.000 claims description 27
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 23
- 239000001301 oxygen Substances 0.000 claims description 23
- 229910052760 oxygen Inorganic materials 0.000 claims description 23
- 239000004065 semiconductor Substances 0.000 claims description 19
- 238000000137 annealing Methods 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 14
- 239000008188 pellet Substances 0.000 claims description 14
- 239000007789 gas Substances 0.000 claims description 9
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 229910052738 indium Inorganic materials 0.000 claims description 3
- 239000011261 inert gas Substances 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 238000010030 laminating Methods 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 230000035699 permeability Effects 0.000 claims 2
- 229910052732 germanium Inorganic materials 0.000 claims 1
- 239000010408 film Substances 0.000 description 87
- 239000010410 layer Substances 0.000 description 26
- 238000002834 transmittance Methods 0.000 description 19
- 239000010409 thin film Substances 0.000 description 7
- 239000012528 membrane Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 239000013078 crystal Substances 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000002079 cooperative effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/832—Electrodes characterised by their material
- H10H20/833—Transparent materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/831—Electrodes characterised by their shape
Landscapes
- Electrodes Of Semiconductors (AREA)
- Led Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29135695 | 1995-11-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW312855B true TW312855B (enrdf_load_html_response) | 1997-08-11 |
Family
ID=51566544
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW085113607A TW312855B (enrdf_load_html_response) | 1995-11-09 | 1996-11-07 |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR970030544A (enrdf_load_html_response) |
| TW (1) | TW312855B (enrdf_load_html_response) |
-
1996
- 1996-11-07 TW TW085113607A patent/TW312855B/zh active
- 1996-11-08 KR KR1019960052775A patent/KR970030544A/ko not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| KR970030544A (ko) | 1997-06-26 |
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