TW308758B - - Google Patents

Download PDF

Info

Publication number
TW308758B
TW308758B TW083111300A TW83111300A TW308758B TW 308758 B TW308758 B TW 308758B TW 083111300 A TW083111300 A TW 083111300A TW 83111300 A TW83111300 A TW 83111300A TW 308758 B TW308758 B TW 308758B
Authority
TW
Taiwan
Prior art keywords
wave device
film
forming
acoustic wave
ion
Prior art date
Application number
TW083111300A
Other languages
English (en)
Chinese (zh)
Original Assignee
Murata Manufacturing Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP33929393A external-priority patent/JP3208977B2/ja
Application filed by Murata Manufacturing Co filed Critical Murata Manufacturing Co
Application granted granted Critical
Publication of TW308758B publication Critical patent/TW308758B/zh

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02818—Means for compensation or elimination of undesirable effects
    • H03H9/02929—Means for compensation or elimination of undesirable effects of ageing changes of characteristics, e.g. electro-acousto-migration

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
TW083111300A 1993-12-02 1994-12-06 TW308758B (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP33929393A JP3208977B2 (ja) 1993-12-02 1993-12-02 弾性表面波素子の電極形成方法

Publications (1)

Publication Number Publication Date
TW308758B true TW308758B (ja) 1997-06-21

Family

ID=18326089

Family Applications (1)

Application Number Title Priority Date Filing Date
TW083111300A TW308758B (ja) 1993-12-02 1994-12-06

Country Status (2)

Country Link
KR (1) KR100241805B1 (ja)
TW (1) TW308758B (ja)

Also Published As

Publication number Publication date
KR100241805B1 (ko) 2000-02-01
KR950021137A (ko) 1995-07-26

Similar Documents

Publication Publication Date Title
US6127768A (en) Surface acoustic wave and bulk acoustic wave devices using a Zn.sub.(1-X) Yx O piezoelectric layer device
US6534895B2 (en) Surface acoustic wave device, shear bulk wave transducer, and longitudinal bulk wave transducer
JP3208977B2 (ja) 弾性表面波素子の電極形成方法
JP3829644B2 (ja) 表面波装置、横波トランスデューサー及び縦波トランスデューサーの製造方法
US5838089A (en) Acoustic wave devices on diamond with an interlayer
CN104451545B (zh) 一种ZnO薄膜材料、声表面波滤波器复合薄膜材料及制备方法
JPH0583067A (ja) 表面弾性波素子
JPS6140155B2 (ja)
Shiosaki et al. Piezoelectric thin films for SAW applications
TW308758B (ja)
Kadota et al. Shear bulk wave transducer made of (1120)-plane epitaxial ZnO film on R-sapphire
JPS6341449B2 (ja)
CN112383288A (zh) 一种温度补偿的免封装声表面波器件及其制备方法
Lin et al. Deposition and structural properties of RF magnetron-sputtered ZnO thin films on Pt/Ti/SiNx/Si substrate for FBAR device
GB2025184A (en) Surface acousticwave device comprising a piezoelectric subtrate having a zinc oxid layer on an alumina layer
JPS60212018A (ja) 弾性表面波基板及びその製造方法
JP3438360B2 (ja) 弾性表面波素子の電極形成方法
JPS60210018A (ja) 薄膜圧電振動子
CN207896123U (zh) 一种压电器件
JPS5883420A (ja) 弾性境界波装置
JPH08154030A (ja) 弾性表面波素子
Lin et al. Investigation of layered structure SAW devices fabricated using low temperature grown AlN thin film on GaN/sapphire
JPH0314308A (ja) 弾性表面波フィルタ
JPH07122960A (ja) 弾性表面波素子
JPS58156215A (ja) 弾性表面波素子

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees