A7 806027 B7 五、發明説明（f ) (請先閲讀背面之注意事項再填寫本頁) 本發明係為一種降低鋁網孔道接面鼋阻之方法，專指 一種適用於〇·5微米以下之製程的孔道金屬形成方法， 此方法可獲得較低之接面霉阻者。 按習知1微米製程下，由於孔道開□較宽大，鋁矽銅 金羼（長宽均為1微米· 2微米深）所形成之孔道阻抗低 (平均値/標準差：〇 · 6Ω/0 · 03£2)，應不致造 成問題*然而現今稹髏電路尺寸不斷縮小•並早已進入0 • 5微米製程階段之際·孔道開□曰益縮小之際，孔道阻 抗即相對增加•而以現今〇 · 5微米製程所使用之鈦/銘 銅/抗反射氮化鈦所組成之孔道金颺（VI Α ΜΕΤΑ L)而論（長宽均為Ο · 5微米，深度為1微米），阻抗 之平均値/標準差則昇高為1·2Ω/0.6Ω之位準， 由上述兩數據相互比較可知，阻抗為呈倍數增加之情況下 ，即有加以改善之必要。 經濟部中央標準局貝工消費合作社印製 而以下即就習知製程予以說明其阻抗問題所在：如第 二圔所示 > 習知製程為在下層金颺（Μ 1 )上方覆蓋絕縁 層（ΟΧ)及經孔道（VIA)蝕刻之步驟•以形成與下 層金驪（Ml)表面相通之孔道（VIA)之後·則為形 成厚度約在1 500A之鈦層（T i )於該下層金颺（M 1 )表面，之後*為經一道濺鍍之步驟，形成厚度約在6 OOOA之鋁鋦（A1 Cu)與填滿整個孔道（VIA) 位置，最後則為形成一薄孱度（約2 5 OA〉之氮化鈦（ T i N)材料的抗反射腰（此抗反射層為犧牲層，於後纘 -3-本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 3060^7 經濟部中央梂準局員工消费合作社印製 A7 B7__五、發明説明（l ) 沈稹上層金屬時即先行去除）*是以•由前述說明可知* 孔道位匾之金屬為以鈦層（T i )及鋁網（A 1 Cu)金 屬所組成•雖此兩腰金颺均為低阻抗之良導髏材料•惟於 進行前述鋁銅金鼸濺鍍作業時，為在高溫環境下進行（溫 度約在280 °C)，如此，即導致該鋁鋦（AlCu)金 饜與下方之鈦（T i )金屬材料之接面位置產生不當化學 反應而生成所謂的三鋁化鈦（T i A 13 )複合物 > 由於 此複合物為一較高阻抗之金颺•即導致整個孔道金颺之阻 抗數値無法適當降低•故本發明即思及若可消除該複合物 之情況下，應可達到降低孔道金鼸阻抗之效果。 亦即，本發明之主要目的在於提供一種降低鋁銅孔道 接面罨阻之方法，主要為改變鋁銅金屬濺鍍作業為兩步驟 黄施，亦即•為先行在較低溫之條件下進行一薄厚度之鋁 網濺鍍作業，其次，再以高溫條件進行第二次之鋁銅濺鍍 •而藉第一步驟之較低的作業溫度，可降低與消除前述高 阻抗複合物之形成，而第二步驟下，由於已透過第一步驟 所形成之薄層鋁銅金颺與下方之鈦金颺隔開•故可在高溫 環境下進行其餘鋁銅金颺之濺鍍形成作業，而無虞形成該 複合物•而藉此製程之改變，則可令0 · 5微米製程之孔 道金屬的平均値/標準差降低至0·7/0.06之低阻 抗效果，為一確具改良進步性之製程者》 本發明之次一目的在於提供一種降低鋁銅孔道接面霉 阻之方法 > 其中該第一步驟為在低於1 0 o°c之溫度下進 -4- (請先閲讀背面之注意事項再填寫本頁) 裝. 訂 4 本紙張尺度適用中國國家標準（CNS ) A4规格（210X297公釐） m$G27 ΑΊ B7 五、發明説明（弓） 行者，而第二步驟為在2 8 0 °C之高溫狀態進行者。 本發明之又_@的在於提供一種降低鋁銅孔道接面霉 阻之方法•其中該第一步驟之作業溫度為在6 0〜1 0 0 °C之間為宜。 本發明之再一g的在於提供一種降低鋁銅孔道接面霉 阻之方法，其中該第一步驟之作業溫度為設在8 0°C為g 佳者。 本發明之另一巨的在於提供一種降低鋁鋦孔道接面電 阻之方法，其中該第一步驟之處理時間約在1 5秒钂，而 第二步驟之處理時間為約在3 0秒篇者。 為使責審查委黄能進一步瞭解本發明之方法，特徵 及其他目的，玆附以圖式詳細說明如后： (一）·圔式部份： 第一圔：係本發明之製程剖面示意圈。 第二圔：係習知製程之剖面示意圜。 經濟部中央揉準局負工消费合作社印製 (請先閲讀背面之注意事項再填寫本頁) 如第一圔所示，本發明之製程與習知製程之差別為在 於：將6000A之鋁銅（AlCu)金屬之濺鍍作業分 割成兩階段實施•其中，第一步驟為在低溫狀態下（溫度 為在10 0°C以下），進行濺鍍形成一較薄厚度之鋁銅（ A1 Cu)金饜（厚度約在2000A、作業時間約在1 5秒鐘）•第二步驟則為高溫狀態（溫度約在280 °C、 作業時間約在30秒鐘）進行第二次之鋁銅（A 1 Cu) 金臑濺鍍作業（形成蓐度為4000A〉，如此，該兩步 -5 一 本紙張尺度適用中國國家橾準（CNS ) A4規格（210X297公釐） 經濟部中央揉準局員工消費合作杜印製 A7 B7 、發明説明（丨） 輮進行鋁網濺鍍作業下•於鋁銅之總厚度不變之情況下， 前置及後績作業均與習知製程完全相同。 以前述鋁銅分成高、低溫及兩步驟之濺鍍作業下，gD 可在前述第一階段之低溫濺鍍作業下，可達到防止鋁銅與 鈦金颺之間產生不當化學反應，而可適當及防止前述三銘 化鈦（T i A 13 )之高阻抗複合物形成在該兩者之接面 位霤上•此舉，當可使鋁網與鈦金颺之間可獲得較佳及較 確實之接觸導霉效果•而經實際試驗之證寅，經以本發明 之兩階段製程寅施下，則可令孔道阻抗之平均値/標準差 降低至0 · 7/0 · 06之位準（0 · 5微米製程之孔道 尺寸下），此數據與傳統〇·5微米製程所形成之阻抗數 值1·2/0·6相較，確有降低阻抗及改進之功效存在 〇 而前述低溫作業之溫度亦不宜過低》宜在6 0〜1 0 〇°C之間•較宜設在8 0°C者，而第二階段之高溫作業溫 度則與傳統製程之形成溫度相同，以避免對後纜製程之影 響。 故以前述說明可知•本發明即提供一以兩階段鋁銅激 鍍作業•據以降低與免除接面位置之不當複合物之生成· 確達到降低孔道阻抗之效果*且製程上寅施上僅改變鋁銅 濺鍍作業而已，寅際作業上亦颺簡便及易於達成，確為一 具進步性及符合產業上利用之新方法，應符專利申講要件 ，爰依法提出申請。 -6- 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先閲讀背面之注意事項再填寫本頁) 裝· irA7 806027 B7 V. Description of the invention (f) (Please read the notes on the back before filling in this page) The present invention is a method to reduce the resistance of the aluminum mesh hole junction, specifically refers to a method that is suitable for less than 0.5 microns The method of forming the hole metal in the process. This method can obtain a lower mold resistance of the junction. According to the conventional 1 micron process, due to the wide opening of the hole, the resistance of the hole formed by the aluminum silicon copper alloy (length and width are 1 micrometer and 2 micrometers deep) is low (average value / standard deviation: 〇 · 6Ω / 0 · 03 £ 2), it should not cause a problem * However, the size of the cymbals circuit is shrinking nowadays • It has already entered 0 • At the time of the 5 micron process stage • When the channel is opened-the impedance of the channel is relatively increased when the size is reduced • And now 〇 · 5 micron process used in the titanium / Ming copper / anti-reflective titanium nitride hole composed of VI Yang (VI Α ΜΕΤΑ L) in terms of (length and width are Ο · 5 microns, depth is 1 microns), the impedance of The average value / standard deviation rises to the level of 1.2 Ω / 0.6 Ω. From the comparison of the above two data, it can be seen that when the impedance is a multiple increase, it is necessary to improve it. Printed by the Beigong Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs and the following explains the impedance problem of the conventional process: as shown in the second image> The conventional process is to cover the insulating layer above the lower Jinyang (Μ 1) (ΟΧ) and etching through the via (VIA) • After forming the via (VIA) communicating with the surface of the lower layer of gold (Ml) • to form a titanium layer (T i) with a thickness of about 1 500A on the lower layer of gold Surface (M 1), followed by a sputtering step to form an aluminum arsenic (A1 Cu) with a thickness of about 6 OOOA and fill the entire hole (VIA) position, and finally form a thin degree (about 2 5 OA> anti-reflective waist of titanium nitride (TiN) material (this anti-reflective layer is a sacrificial layer, and the Chinese standard (CNS) A4 specification (210X297mm) is applied at the back of the paper -3- 3060 ^ 7 A7 B7__ printed by the Employee Consumer Cooperative of the Central Bureau of Economic Affairs of the Ministry of Economy V. Description of the invention (l) Shen Zhen removes the upper layer metal first) * Yes • As indicated by the foregoing description * The metal of the plaque is titanium Layer (T i) and aluminum mesh (A 1 Cu) metal • Although both waists are low-impedance Good guide skeleton material • However, when performing the above-mentioned aluminum-copper-gold splashing operation, it is carried out in a high-temperature environment (temperature is about 280 ° C), so that it leads to the AlCu gold coat and the underlying titanium ( T i) An inappropriate chemical reaction occurs at the junction of the metal material to form a so-called titanium aluminide (T i A 13) composite> Because this composite is a high-impedance gold Yang The impedance value cannot be properly reduced. Therefore, the present invention contemplates that if the compound can be eliminated, the effect of reducing the resistance of the channel gold ram should be achieved. That is, the main purpose of the present invention is to provide a reduction of aluminum-copper channels The method of junction resistance is mainly to change the aluminum-copper metal sputtering operation to two-step yellow application, that is, to perform a thin-thick aluminum mesh sputtering operation at a lower temperature first, followed by high-temperature conditions Conducting the second aluminum-copper sputtering • The lower operating temperature of the first step can reduce and eliminate the formation of the aforementioned high-impedance compound. Under the second step, due to the thinness formed by the first step Layer aluminum copper gold Separated from the titanium gold underneath • So it is possible to perform the sputtering forming operation of the remaining aluminum-copper gold under high temperature environment without any risk of forming the compound. With this process change, the 0.5 micron process can be made The low-impedance effect of the average value / standard deviation of the hole metal is reduced to 0.7 / 0.06, which is a process with improved progress. The second object of the present invention is to provide a method for reducing the mold resistance of the aluminum-copper hole junction Method> The first step is to enter at a temperature lower than 10 o ° c -4- (please read the precautions on the back and then fill out this page) to install. Order 4 This paper size is applicable to China National Standards (CNS ) A4 specification (210X297mm) m $ G27 ΑΊ B7 5. Description of the invention (bow) Walker, and the second step is to perform at a high temperature of 280 ° C. Another aspect of the present invention is to provide a method for reducing the mildew resistance of aluminum-copper hole joints. Wherein the operating temperature of the first step is preferably between 60 ° and 100 ° C. Still another g of the present invention is to provide a method for reducing the mold resistance of aluminum-copper channel junctions, wherein the operating temperature of the first step is preferably set at 80 ° C as g. Another great aspect of the present invention is to provide a method for reducing the junction resistance of aluminum sintered vias, wherein the processing time of the first step is about 15 seconds sium, and the processing time of the second step is about 30 seconds . In order to enable Huang Huang to further understand the method, features and other purposes of the present invention, the following drawings are attached to explain in detail as follows: (1) · Xi part: The first part: is the process profile schematic circle of the present invention . The second 圔: the profile of the conventional manufacturing process. Printed by the Ministry of Economic Affairs Central Bureau of Accreditation Consumer Cooperatives (please read the precautions on the back before filling in this page). As shown in the first image, the difference between the process of the present invention and the conventional process is that: 6000A aluminum copper (AlCu) metal sputtering operation is divided into two stages. Among them, the first step is to perform sputtering at a low temperature (temperature is below 100 ° C) to form a thin thickness of aluminum copper (A1 Cu) Gold noodles (thickness about 2000A, working time about 15 seconds) • The second step is high temperature (temperature about 280 ° C, working time about 30 seconds) for the second time of aluminum copper (A 1 Cu) Gold Sputtering Operation (Formation Degree is 4000A), so, the two-step-5 one paper scale is applicable to China National Standard (CNS) A4 specifications (210X297 mm) Employee Consumption of the Central Bureau of Economic Development of the Ministry of Economic Affairs Cooperate to print A7 B7. Description of invention (丨) When performing aluminum mesh sputtering operation • When the total thickness of aluminum and copper is unchanged, the pre- and post-performance operations are exactly the same as the conventional process. When copper is divided into high and low temperature and two-step sputtering operation, gD can Under the above-mentioned first-stage low temperature sputtering operation, it can prevent the improper chemical reaction between aluminum copper and titanium gold, and can properly and prevent the formation of the high-impedance compound of the above-mentioned titanium triimide (T i A 13) in The interface between the two slides up. This action can make the aluminum mesh and the titanium gold get better and more reliable contact mold effect. And the actual test proves that the invention Under the two-stage process, the average value / standard deviation of the channel impedance can be reduced to the level of 0. 7/0. 06 (under the size of the channel of 0. 5 micron process). This data is the same as the traditional 0.5. Micron Compared with the resistance value 1 · 2/0 · 6 formed by the manufacturing process, it does have the effect of lowering the resistance and improving it. The temperature of the aforementioned low temperature operation should not be too low. It should be between 6 0 ~ 1 0 ° C. It is better to set at 80 ° C, and the high-temperature operating temperature of the second stage is the same as the formation temperature of the traditional process to avoid the impact on the rear cable process. Therefore, it can be known from the foregoing description that the present invention provides a two-stage process Aluminum-copper laser plating operation · According to reduce and eliminate the improper compound of the joint position Generate and indeed achieve the effect of reducing the impedance of the hole * and the process only changes the aluminum-copper sputtering operation. It is also simple and easy to achieve in the operation, which is indeed a new method that is progressive and suitable for industrial use. , Should comply with the requirements for patent application, and apply in accordance with the law. -6- This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297mm) (please read the precautions on the back before filling out this page) 装 · ir