TW305064B - - Google Patents

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Publication number
TW305064B
TW305064B TW085103216A TW85103216A TW305064B TW 305064 B TW305064 B TW 305064B TW 085103216 A TW085103216 A TW 085103216A TW 85103216 A TW85103216 A TW 85103216A TW 305064 B TW305064 B TW 305064B
Authority
TW
Taiwan
Prior art keywords
nitrogen
layer
doped
gap
epitaxial
Prior art date
Application number
TW085103216A
Other languages
English (en)
Chinese (zh)
Original Assignee
Shinetsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinetsu Handotai Co Ltd filed Critical Shinetsu Handotai Co Ltd
Application granted granted Critical
Publication of TW305064B publication Critical patent/TW305064B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/8215—Bodies characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02392—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10P14/263—
    • H10P14/265—
    • H10P14/2909—
    • H10P14/3416—
    • H10P14/3418—
    • H10P14/3438—

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Led Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW085103216A 1995-03-27 1996-03-18 TW305064B (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6777895A JP3104218B2 (ja) 1995-03-27 1995-03-27 窒素ドープＧａＰエピタキシャル層の成長方法

Publications (1)

Publication Number Publication Date
TW305064B true TW305064B (enExample) 1997-05-11

Family

ID=13354761

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085103216A TW305064B (enExample) 1995-03-27 1996-03-18

Country Status (4)

Country Link
US (1) US5985023A (enExample)
EP (1) EP0735599A3 (enExample)
JP (1) JP3104218B2 (enExample)
TW (1) TW305064B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103173715B (zh) * 2012-12-19 2014-10-29 常州星海电子有限公司 一种制备GaP薄膜材料的方法
US11056338B2 (en) * 2018-10-10 2021-07-06 The Johns Hopkins University Method for printing wide bandgap semiconductor materials
US11823900B2 (en) 2018-10-10 2023-11-21 The Johns Hopkins University Method for printing wide bandgap semiconductor materials
CN114420801A (zh) * 2021-12-20 2022-04-29 江西兆驰半导体有限公司 一种发光二极管外延片制备方法及外延片

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3964940A (en) * 1971-09-10 1976-06-22 Plessey Handel Und Investments A.G. Methods of producing gallium phosphide yellow light emitting diodes
US4001056A (en) * 1972-12-08 1977-01-04 Monsanto Company Epitaxial deposition of iii-v compounds containing isoelectronic impurities
US3931631A (en) * 1973-07-23 1976-01-06 Monsanto Company Gallium phosphide light-emitting diodes
CA1019827A (en) * 1973-10-26 1977-10-25 Tatsuro Beppu Method of manufacturing a gallium phosphide light-emitting device
US4101920A (en) * 1975-01-29 1978-07-18 Sony Corporation Green light emitting diode
JP3042566B2 (ja) * 1992-08-19 2000-05-15 信越半導体株式会社 ＧａＰ系発光素子基板の製造方法
JP3324102B2 (ja) * 1993-11-22 2002-09-17 信越半導体株式会社 エピタキシャルウェーハの製造方法
JP3163217B2 (ja) * 1994-05-31 2001-05-08 シャープ株式会社 発光ダイオード及びその製造方法

Also Published As

Publication number Publication date
JPH08264467A (ja) 1996-10-11
EP0735599A3 (en) 1999-05-12
EP0735599A2 (en) 1996-10-02
JP3104218B2 (ja) 2000-10-30
US5985023A (en) 1999-11-16

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