TW299454B - - Google Patents

Download PDF

Info

Publication number
TW299454B
TW299454B TW85103833A TW85103833A TW299454B TW 299454 B TW299454 B TW 299454B TW 85103833 A TW85103833 A TW 85103833A TW 85103833 A TW85103833 A TW 85103833A TW 299454 B TW299454 B TW 299454B
Authority
TW
Taiwan
Prior art keywords
substrate
thickness
processing
polishing
support substrate
Prior art date
Application number
TW85103833A
Other languages
English (en)
Chinese (zh)
Original Assignee
Komatsu Denshi Kinzoku Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP7109907A external-priority patent/JPH08274285A/ja
Application filed by Komatsu Denshi Kinzoku Kk filed Critical Komatsu Denshi Kinzoku Kk
Application granted granted Critical
Publication of TW299454B publication Critical patent/TW299454B/zh

Links

Landscapes

  • Mechanical Treatment Of Semiconductor (AREA)
TW85103833A 1995-03-29 1996-04-02 TW299454B (cs)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7109907A JPH08274285A (ja) 1995-03-29 1995-03-29 Soi基板及びその製造方法

Publications (1)

Publication Number Publication Date
TW299454B true TW299454B (cs) 1997-03-01

Family

ID=51565564

Family Applications (1)

Application Number Title Priority Date Filing Date
TW85103833A TW299454B (cs) 1995-03-29 1996-04-02

Country Status (1)

Country Link
TW (1) TW299454B (cs)

Similar Documents

Publication Publication Date Title
JP5384313B2 (ja) 複合基板の製造方法及び複合基板
US20010039119A1 (en) Semiconductor wafer and method for fabrication thereof
TW317522B (en) Surface lapping method for wafer of semiconductor
WO2003094215A1 (en) Semiconductor wafer manufacturing method and wafer
JP5061694B2 (ja) 研磨パッドの製造方法及び研磨パッド並びにウエーハの研磨方法
US20020160693A1 (en) Wafer polishing method and wafer polishing device
TWI289889B (en) Method of polishing wafer and polishing pad for polishing wafer
TW509991B (en) Method of manufacturing semiconductor wafer
JPH08274285A (ja) Soi基板及びその製造方法
TWI424484B (zh) Wafer grinding method and wafer
TW299454B (cs)
JP4103808B2 (ja) ウエーハの研削方法及びウエーハ
JP3839903B2 (ja) 半導体ウエーハの研磨装置および研磨方法
JPH02139163A (ja) ウェーハの加工方法
JPS60249568A (ja) 半導体ウエハの研磨方法
JPS632656A (ja) ウエハ研磨方法及びそれに用いるウエハ研磨基板
JPH10156710A (ja) 薄板の研磨方法および研磨装置
JP4793680B2 (ja) 半導体ウェーハの研磨方法
TW303483B (cs)
JPH09262761A (ja) 半導体ウェーハの研磨方法
JPH11285963A (ja) ウェーハ研磨用研磨布若しくは研磨定盤からなる研磨体及び該研磨体を用いたウェーハ研磨方法
JPH11216661A (ja) ウェーハの枚葉式研磨方法とその装置
JPH0319336A (ja) 半導体ウェーハの研磨方法
JP2007266068A (ja) 研磨方法及び研磨装置
US6254465B1 (en) Method of machining wafer for making filmed head sliders and device for machining the same